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    • 13. 发明申请
    • LIGHT EMITTING DEVICE
    • 发光装置
    • US20100283035A1
    • 2010-11-11
    • US12561761
    • 2009-09-17
    • Akira Tanaka
    • Akira Tanaka
    • H01L33/00
    • H01L33/145H01L33/08H01L33/305
    • A light emitting device includes: an active layer including a multi-quantum well having a well layer and a barrier layer, the active layer including a non-emitting region and an emitting region formed around the non-emitting region; a first cladding layer provided on a first major surface of the active layer; a pad electrode provided above the first cladding layer so that its center is located near a center of the non-emitting region as viewed in a direction perpendicular to the first major surface; and a second cladding layer provided below a second major surface of the active layer opposite to the first major surface. A bandgap of the well layer in the non-emitting region is wider than a bandgap of the well layer in the emitting region and narrower than a bandgap of the first cladding layer.
    • 发光器件包括:有源层,包括具有阱层和阻挡层的多量子阱,所述有源层包括非发射区和形成在所述非发射区周围的发射区; 设置在所述有源层的第一主表面上的第一覆层; 焊接电极,其设置在所述第一包层上方,使得其中心位于与所述第一主表面垂直的方向上观察的所述非发光区域的中心附近; 以及第二包覆层,设置在与第一主表面相对的有源层的第二主表面的下方。 非发光区域中的阱层的带隙比发光区域中的阱层的带隙宽,并且比第一包层的带隙窄。
    • 17. 发明授权
    • Nitride-based semiconductor laser device
    • 基于氮化物的半导体激光器件
    • US07522645B2
    • 2009-04-21
    • US11841254
    • 2007-08-20
    • Akira Tanaka
    • Akira Tanaka
    • H01S3/14H01S3/04
    • H01S5/34333B82Y20/00H01S5/2009H01S5/22H01S5/3072
    • A nitride-based semiconductor laser device, includes: a first cladding layer of a first conductivity type; an active layer formed above the first cladding layer; an overflow-preventing layer of a second conductivity type formed on the active layer; and a second cladding layer of the second conductivity type formed above the overflow-preventing layer. The active layer includes three barrier layers and two well layers so that each well layer can be inserted between the corresponding ones of the three barrier layers and two of the three barrier layers are located on the outer sides of both well layers, thereby constituting a double-layered quantum well layer. The thickness of each well layer is set within a range of 2 to 5 nm.
    • 一种氮化物系半导体激光器件,包括:第一导电类型的第一包层; 形成在所述第一包层上方的有源层; 形成在有源层上的第二导电类型的溢出防止层; 以及形成在溢流防止层上方的第二导电类型的第二包覆层。 有源层包括三个阻挡层和两个阱层,使得每个阱层可以插入在三个阻挡层中的相应的一个之间,并且三个势垒层中的两个位于两个阱层的外侧,从而构成双重的 层数量子阱层。 每个阱层的厚度设定在2〜5nm的范围内。
    • 18. 发明授权
    • Signal arrival direction deducing device, signal arrival direction deducing method, and signal direction deducing program
    • 信号到达方向推导装置,信号到达方向推导方法和信号方向推导程序
    • US07436358B2
    • 2008-10-14
    • US11662654
    • 2005-09-14
    • Akira Tanaka
    • Akira Tanaka
    • G01S5/02G01S5/04H04B7/10H04L25/08
    • G01S3/74G01S3/8006G01S3/8083
    • A signal arrival direction deducing device capable of deducing the signal arrival direction even when a correlation matrix between input signals and noise correlation matrix are singular. A state is observed in which only noise is present and a state is observed in which a sound whose arrival direction is to be deduced. A short time Fourier transform is performed. Correlation matrix and an input signal correlation matrix are used to compute proper eigenvalues/proper eigenvectors and improper eigenvectors of the noise correlation matrix with respect to the input signal correlation matrix. A matrix for determining the complementary space component of the signal partial space is computed from the proper eigenvectors and the improper eigenvectors. An arrival direction search is made for the sound arrival direction using the matrix for determining the complementary space component of the signal partial space.
    • 即使输入信号和噪声相关矩阵之间的相关矩阵是奇异的,也能够推导信号到达方向的信号到达方向推导装置。 观察到只有噪声存在的状态,并且观察到其中将要推导出到达方向的声音的状态。 执行短时傅立叶变换。 相关矩阵和输入信号相关矩阵用于相对于输入信号相关矩阵计算噪声相关矩阵的适当特征值/适当的特征向量和不正确的特征向量。 从适当的特征向量和不正确的特征向量计算用于确定信号部分空间的互补空间分量的矩阵。 使用用于确定信号部分空间的互补空间分量的矩阵对声音到达方向进行到达方向搜索。
    • 19. 发明授权
    • Projector device, and photographing method and program of projected image
    • 投影仪设备,投影图像的拍摄方法和程序
    • US07369762B2
    • 2008-05-06
    • US11226952
    • 2005-09-15
    • Akira Tanaka
    • Akira Tanaka
    • G03B17/48G03B7/00
    • G03B33/08G03B17/48G03B21/20G03B29/00H04N5/7458H04N9/045H04N9/3114H04N9/3176H04N9/3182H04N9/3194
    • A protector device is provided which includes a projecting system, a photographing system, and a control section. The projecting system includes a light source lamp, a micromirror element, and a projecting lens, and each image for each of a plurality of color components is time-divided by use of a color wheel, projected, and displayed with respect to an input color image signal. The photographing system includes a photographing lens, a CCD, and a processing circuit in which the projected and displayed image is photographed in accordance with an instruction, when the photographing of the projected and displayed image is instructed. And the control section detects a rotation position of the color wheel with a marker sensor and controls the photographing system to execute the photographing in synchronization with a time division period for each color component in the projecting system.
    • 提供一种保护装置,其包括投影系统,拍摄系统和控制部。 投影系统包括光源灯,微镜元件和投影透镜,并且用于多个颜色分量中的每一个的每个图像通过使用色轮进行时分,相对于输入颜色被投影和显示 图像信号。 拍摄系统包括拍摄镜头,CCD,以及当指示投射和显示的图像的拍摄时,根据指示拍摄投射和显示的图像的处理电路。 并且控制部分利用标记传感器检测色轮的旋转位置,并且控制拍摄系统与投影系统中的每个颜色分量的时分时段同步地执行拍摄。
    • 20. 发明申请
    • NITRIDE-BASED SEMICONDUCTOR LASER DEVICE
    • 基于氮化物的半导体激光器件
    • US20080069163A1
    • 2008-03-20
    • US11841254
    • 2007-08-20
    • Akira Tanaka
    • Akira Tanaka
    • H01S5/22
    • H01S5/34333B82Y20/00H01S5/2009H01S5/22H01S5/3072
    • A nitride-based semiconductor laser device, includes: a first cladding layer of a first conductivity type; an active layer formed above the first cladding layer; an overflow-preventing layer of a second conductivity type formed on the active layer; and a second cladding layer of the second conductivity type formed above the overflow-preventing layer. The active layer includes three barrier layers and two well layers so that each well layer can be inserted between the corresponding ones of the three barrier layers and two of the three barrier layers are located on the outer sides of both well layers, thereby constituting a double-layered quantum well layer. The thickness of each well layer is set within a range of 2 to 5 nm.
    • 一种氮化物系半导体激光器件,包括:第一导电类型的第一包层; 形成在所述第一包层上方的有源层; 形成在有源层上的第二导电类型的溢出防止层; 以及形成在溢流防止层上方的第二导电类型的第二包覆层。 有源层包括三个阻挡层和两个阱层,使得每个阱层可以插入在三个阻挡层中的相应的一个之间,并且三个势垒层中的两个位于两个阱层的外侧,从而构成双重的 层数量子阱层。 每个阱层的厚度设定在2〜5nm的范围内。