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11. 发明授权

US09248529B2 Assembling apparatus 有权
标题翻译：装配装置
公开(公告)号：US09248529B2
公开(公告)日：2016-02-02
申请号：US13817978
申请日：2011-05-09
申请人： Noriyasu Watanabe , Hirotsugu Miyaki , Hiroshi Tsuge , Kazuyuki Yamaguchi
发明人： Noriyasu Watanabe , Hirotsugu Miyaki , Hiroshi Tsuge , Kazuyuki Yamaguchi
IPC分类号： B23P11/00 , F16H25/08 , B23P19/04 , B23P19/06
CPC分类号： B23P11/00 , B23P19/04 , B23P19/06 , F16H25/08 , Y10T29/53 , Y10T29/53687 , Y10T29/53848
摘要： An assembling apparatus (1) comprises a shaft member (3) having a linear assembling function and a rotational assembling function, a base (2) supporting the shaft member (3) to be movable in the axial direction and rotatable axially, and a drive unit moving in an axial direction and axially rotating the shaft member (3).
摘要翻译：组装装置（1）包括具有线性组装功能和旋转组装功能的轴构件（3），支撑轴构件（3）的基座（2），其可沿轴向方向可轴向旋转，并且驱动单元沿轴向移动并使轴构件（3）轴向旋转。

12. 发明授权

US08936680B2 Crucible vessel and crucible cover having grooves for producing single-crystal silicon carbide, production apparatus and method 有权
标题翻译：具有用于制造单晶碳化硅的槽的坩埚容器和坩埚盖，制造装置和方法
公开(公告)号：US08936680B2
公开(公告)日：2015-01-20
申请号：US13138526
申请日：2010-02-25
申请人： Masakazu Katsuno , Tatsuo Fujimoto , Hiroshi Tsuge , Masashi Nakabayashi
发明人： Masakazu Katsuno , Tatsuo Fujimoto , Hiroshi Tsuge , Masashi Nakabayashi
IPC分类号： C30B23/02 , C30B23/00 , C30B29/36 , H01L21/02
CPC分类号： C30B29/36 , C30B23/005 , H01L21/02378 , H01L21/02433 , H01L21/02529 , Y10T117/10
摘要： The present invention, which provides a crucible for producing single-crystal silicon carbide, and a production apparatus and a production method for single-crystal silicon carbide, which are capable of stably growing a single-crystal silicon carbide ingot good in crystallinity at high yield, is a crucible for producing single-crystal silicon carbide having a crucible vessel for holding silicon carbide raw material and a crucible cover for attaching a seed crystal and is adapted to sublimate a silicon carbide raw material in the crucible vessel to supply silicon carbide sublimation gas onto a seed crystal attached to the crucible cover and grow single-crystal silicon carbide on the seed crystal, which crucible for producing single-crystal silicon carbide is provided in the crucible vessel and the crucible cover with threaded portions to be screwed together and is provided with a sublimation gas discharge groove or grooves capable of regulating flow rate by relative rotation of the threaded portions; and is a production apparatus for single-crystal silicon carbide equipped with such a crucible and a production method for single-crystal silicon carbide utilizing this apparatus.
摘要翻译：提供一种用于制造单晶碳化硅的坩埚的本发明以及能够以高产率稳定地生长结晶度良好的单晶碳化硅锭的单晶碳化硅的制造装置和制造方法是用于生产具有用于保持碳化硅原料的坩埚容器和用于附着晶种的坩埚盖的单晶碳化硅的坩埚，并且适于使坩埚容器中的碳化硅原料升华以提供碳化硅升华气体在连接到坩埚盖上的籽晶上生长晶种上的单晶碳化硅，在坩埚容器中设置用于制造单晶碳化硅的坩埚，并将具有螺纹部的坩埚盖螺纹连接在一起具有能够通过相对旋转来调节流速的升华气体排出槽或沟槽加入部分并且是配备有这种坩埚的单晶碳化硅的制造装置和利用该装置的单晶碳化硅的制造方法。

13. 发明授权

US4775183A Child passenger seat for vehicle 失效
标题翻译：车辆乘客座椅
公开(公告)号：US4775183A
公开(公告)日：1988-10-04
申请号：US85245
申请日：1987-08-11
申请人： Hiroshi Tsuge , Chikao Nagasaka , Motonobu Sugiura
发明人： Hiroshi Tsuge , Chikao Nagasaka , Motonobu Sugiura
IPC分类号： B60N2/28 , B60N2/70 , B60N2/90 , A47C1/00
CPC分类号： B60N2/7005 , B60N2/28 , B60N2/286
摘要： A child passenger seat includes a shell mounted on and secured to a seat of a vehicle and supporting a webbing which restrains the body of a child passenger in an emergency situation of the vehicle. The child passenger seat further includes a cover which is fitted over the shell and provided with a pocket for accommodating a cushioning pad. Accordingly, it is possible for the pad to be removed from the cover so as to be replaced or washed.
摘要翻译：儿童乘客座椅包括安装在车辆座椅上并固定到车辆座椅上的壳体，并且支撑在车辆的紧急情况下限制儿童乘客身体的织带。儿童乘客座椅还包括盖子，该盖子装配在壳体上并设置有用于容纳缓冲垫的口袋。因此，可以将垫从盖子上取下以便更换或清洗。

14. 发明授权

US4437683A Automatic seatbelt system 失效
标题翻译：自动安全带系统
公开(公告)号：US4437683A
公开(公告)日：1984-03-20
申请号：US300069
申请日：1981-09-08
申请人： Shigeru Moriya , Akio Yoshida , Yoshihiro Hayashi , Tatsushi Kubota , Hiroshi Tsuge
发明人： Shigeru Moriya , Akio Yoshida , Yoshihiro Hayashi , Tatsushi Kubota , Hiroshi Tsuge
IPC分类号： B60R22/06 , B60R21/10
CPC分类号： B60R22/06
摘要： An automatic seatbelt system which has a flexible tape extending continuously along a vehicle body form a roof side portion through a center pillar to a door so as to move a shoulder webbing connected to the roof side portion and a lab webbing connected to the door at the same time by a single driving sprocket wheel in response to an occupant entering or leaving a vehicle. The tape has a plurality of openings along the longitudinal direction thereof and the sprocket wheel is meshed with the tape by the openings. A shoulder guide rail is provided along the roof side portion of the vehicle body, within which a shoulder guide member guiding the shoulder webbing and connected to the trape is slidably received. A lap guide rail is provided along the door, within which a lap guide member guiding the lap webbing and connected to the tape is slidably received. When the sprocket wheel rotates, both shoulder and lap seatbelt webbings are simultaneously moved through the tape toward either the front side of the vehicle to provide an enough space for the occupant to enter the vehicle, or the rear side of the vehicle to place the webbings over the occupant at a seat.
摘要翻译：一种自动安全带系统，其具有沿着车体连续延伸的柔性带，通过中心柱形成一个车顶侧部分到门，以便移动连接到屋顶侧部分的肩带和连接到门的实验室织带通过单个驱动链轮同时响应乘员进入或离开车辆。该带沿其长度方向具有多个开口，并且该链轮与该带通过开口啮合。沿着车身的车顶侧部分设置有一个肩导轨，其中可滑动地接收引导肩带并连接到该车架的肩导引件。沿着门提供了一个搭接导轨，其中可滑动地接收引导配合织带并连接到带的搭接引导构件。当链轮旋转时，肩部和膝部安全带网带同时通过带子朝向车辆的前侧移动，以便为乘客进入车辆或车辆的后侧提供足够的空间以将网带乘坐在座位上。

15. 发明授权

US4371126A Webbing lock device 失效
标题翻译：织带锁装置
公开(公告)号：US4371126A
公开(公告)日：1983-02-01
申请号：US187814
申请日：1980-09-16
申请人： Hiroshi Tsuge , Takashi Kawaharazaki , Jun Yasumatsu
发明人： Hiroshi Tsuge , Takashi Kawaharazaki , Jun Yasumatsu
IPC分类号： B60R22/28 , B60R22/42 , B60R22/48
CPC分类号： B60R22/42 , B60R22/28
摘要： A pair of lock members are provided for directly locking the intermediate portion of an occupant restraining webbing, and at least one of said pair of lock members is provided at the clamping surface thereof with a curvature, whereby a sharp change in tension in the clamped webbing is avoided to prevent the webbing from being ruptured, thus enabling to reliably restrain an occupant.
摘要翻译：提供一对锁定构件用于直接锁定乘员约束带的中间部分，并且所述一对锁定构件中的至少一个在其夹紧表面处设置有曲率，由此夹紧的织带中的张力急剧变化避免了织带破裂，从而能够可靠地限制乘员。

16. 发明授权

US08927396B2 Production process of epitaxial silicon carbide single crystal substrate 有权
标题翻译：外延碳化硅单晶衬底的生产工艺
公开(公告)号：US08927396B2
公开(公告)日：2015-01-06
申请号：US13881231
申请日：2011-11-15
申请人： Takashi Aigo , Hiroshi Tsuge , Masakazu Katsuno , Tatsuo Fujimoto , Hirokatsu Yashiro
发明人： Takashi Aigo , Hiroshi Tsuge , Masakazu Katsuno , Tatsuo Fujimoto , Hirokatsu Yashiro
IPC分类号： H01L21/20 , H01L21/02 , C30B25/18 , C30B29/36 , C30B25/02
CPC分类号： H01L21/02378 , C30B25/02 , C30B25/18 , C30B25/186 , C30B29/36 , H01L21/02433 , H01L21/02529 , H01L21/0262 , H01L21/02658 , Y10S438/931
摘要： An object of the present invention is to provide a production process of an epitaxial silicon carbide single crystal substrate having a high-quality silicon carbide single crystal thin film reduced in the surface defect and the like on a silicon carbide single crystal substrate with a small off-angle. According to the present invention, in the production process of an epitaxial silicon carbide single crystal substrate having a high-quality silicon carbide single crystal thin film reduced in the surface defect and the like on a silicon carbide single crystal substrate with an off-angle of 4° or less, pretreatment etching to a depth of 0.1 to 1 μm is performed at a temperature of 1,550 to 1,650° C. by flowing a gas containing silicon and chlorine together with a hydrogen gas such that the silicon atom concentration becomes from 0.0001 to 0.01% based on hydrogen atoms in the hydrogen gas, and thereafter, an epitaxial layer is formed.
摘要翻译：本发明的目的是提供一种外延碳化硅单晶衬底的制造方法，该外延碳化硅单晶衬底具有在具有小的剥离的碳化硅单晶衬底上具有减少表面缺陷等的高质量碳化硅单晶薄膜 -角度。根据本发明，在具有在碳化硅单晶衬底上具有减小表面缺陷等的高质量碳化硅单晶薄膜的外延碳化硅单晶衬底的制造工艺中， 4°以下，通过使含有硅和氯的气体与氢气一起流动，使得硅原子浓度为0.0001〜0.0001，从而在1550〜1650℃的温度下进行0.1〜1μm深度的预处理蚀刻 0.01％，基于氢气中的氢原子，然后形成外延层。

17. 发明申请

US20140363607A1 SILICON CARBIDE SINGLE CRYSTAL WAFER AND MANUFACTURING METHOD FOR SAME 有权
标题翻译：硅碳化硅单晶及其制造方法
公开(公告)号：US20140363607A1
公开(公告)日：2014-12-11
申请号：US14241623
申请日：2012-08-29
申请人： Shinya Sato , Tatsuo Fujimoto , Hiroshi Tsuge , Masakazu Katsuno
发明人： Shinya Sato , Tatsuo Fujimoto , Hiroshi Tsuge , Masakazu Katsuno
IPC分类号： C30B23/02 , C30B29/36 , H01L29/16
CPC分类号： C30B23/02 , C30B23/00 , C30B29/36 , H01L29/1608 , Y10T428/21
摘要： Provided are a method for manufacturing a SiC single crystal having high crystal quality and, in particular, extremely low screw dislocation density and a SiC single crystal ingot obtained by the method. In particular, provided is a silicon carbide single crystal substrate that is a substrate cut from a bulk silicon carbide single crystal grown by the Physical Vapior Transport (PVT) method, in which the screw dislocation density is smaller in the peripheral region than in the center region, so that screw dislocations are partially reduced.The method is a method for manufacturing a SiC single crystal by the PVT method using a seed crystal and the ingot is a SiC single crystal ingot obtained by the method. Particularly, the silicon carbide single crystal substrate is a silicon carbide single crystal substrate in which when, by representing the diameter of the substrate as R, a center circle region having a diameter of 0.5×R centered around a center point O of the substrate and a doughnut-shaped peripheral region remaining by excluding the center circle region are defined, the average value of screw dislocation densities observed in the doughnut-shaped peripheral region is 80% or less of the average value of screw dislocation densities observed in the center circle region.
摘要翻译：提供一种制造具有高结晶质量，特别是极低螺旋位错密度的SiC单晶的方法和通过该方法获得的SiC单晶锭。特别地，提供了碳化硅单晶基板，其是从通过物理运输（PVT）方法生长的块状碳化硅单晶切割的基板，其中在周边区域中的螺旋位错密度小于中心区域，使得螺旋位错部分减少。该方法是通过使用晶种的PVT方法制造SiC单晶的方法，并且该锭是通过该方法获得的SiC单晶锭。特别地，碳化硅单晶衬底是碳化硅单晶衬底，其中当通过将衬底的直径表示为R时，以衬底的中心点O为中心的直径为0.5×R的中心圆区域，定义了通过排除中心圆区域而剩余的环状周边区域，在圆环状周边区域观察到的螺旋位错密度的平均值为在中心圆区域观察到的螺旋位错密度的平均值的80％以下。

18. 发明申请

US20130145614A1 ASSEMBLING APPARATUS 有权
标题翻译：装配装置
公开(公告)号：US20130145614A1
公开(公告)日：2013-06-13
申请号：US13817978
申请日：2011-05-09
申请人： Noriyasu Watanabe , Hirotsugu Miyaki , Hiroshi Tsuge , Kazuyuki Yamaguchi
发明人： Noriyasu Watanabe , Hirotsugu Miyaki , Hiroshi Tsuge , Kazuyuki Yamaguchi
IPC分类号： B23P11/00
CPC分类号： B23P11/00 , B23P19/04 , B23P19/06 , F16H25/08 , Y10T29/53 , Y10T29/53687 , Y10T29/53848
摘要： An assembling apparatus (1) comprises a shaft member (3) having a linear assembling function and a rotational assembling function, a base (2) supporting the shaft member (3) to be movable in the axial direction and rotatable axially, and a drive unit moving in an axial direction and axially rotating the shaft member (3).
摘要翻译：组装装置（1）包括具有线性组装功能和旋转组装功能的轴构件（3），支撑轴构件（3）的基座（2），其可沿轴向方向可轴向旋转，并且驱动单元沿轴向移动并使轴构件（3）轴向旋转。

19. 发明授权

US08044408B2 SiC single-crystal substrate and method of producing SiC single-crystal substrate 有权
标题翻译： SiC单晶衬底和SiC单晶衬底的制造方法
公开(公告)号：US08044408B2
公开(公告)日：2011-10-25
申请号：US12469299
申请日：2009-05-20
申请人： Tatsuo Fujimoto , Kohei Tatsumi , Taizo Hoshino , Masakazu Katsuno , Noboru Ohtani , Masashi Nakabayashi , Hiroshi Tsuge , Housei Hirano , Hirokatsu Yashiro
发明人： Tatsuo Fujimoto , Kohei Tatsumi , Taizo Hoshino , Masakazu Katsuno , Noboru Ohtani , Masashi Nakabayashi , Hiroshi Tsuge , Housei Hirano , Hirokatsu Yashiro
IPC分类号： H01L29/15
CPC分类号： H01L21/02378 , C30B23/00 , C30B29/36 , H01L21/02529 , H01L21/02631
摘要： The invention provides a high-quality SiC single-crystal substrate, a seed crystal for producing the high-quality SiC single-crystal substrate, and a method of producing the high-quality SiC single-crystal substrate, which enable improvement of device yield and stability. Provided is an SiC single-crystal substrate wherein, when the SiC single-crystal substrate is divided into 5-mm square regions, such regions in which dislocation pairs or dislocation rows having intervals between their dislocation end positions of 5 μm or less are present among the dislocations that have ends at the substrate surface account for 50% or less of all such regions within the substrate surface and the dislocation density in the substrate of dislocations other than the dislocation pairs or dislocation is 8,000/cm2.
摘要翻译：本发明提供一种高品质SiC单晶衬底，用于生产高质量SiC单晶衬底的晶种，以及制造高品质SiC单晶衬底的方法，其能够提高器件产量和稳定性。本发明提供一种SiC单晶基板，其中，当将SiC单晶基板分割为5mm见方的区域时，其位错对或位错列之间的位错端位置之间的间隔为5μm以下的区域存在于在基板表面处具有终点的位错占基板表面内所有这些区域的50％或更少，位错对或错位以外的位错基板中的位错密度为8,000 / cm 2。

20. 发明申请

US20090205565A1 APPARATUS FOR MANUFACTURING SINGLE-CRYSTAL SILICON CARBIDE 有权
标题翻译：制造单晶碳化硅的装置
公开(公告)号：US20090205565A1
公开(公告)日：2009-08-20
申请号：US12416500
申请日：2009-04-01
申请人： Masashi Nakabayashi , Tatsuo Fujimoto , Hiroshi Tsuge , Masakazu Katsuno , Noboru Ohtani
发明人： Masashi Nakabayashi , Tatsuo Fujimoto , Hiroshi Tsuge , Masakazu Katsuno , Noboru Ohtani
IPC分类号： C30B15/10
CPC分类号： C30B29/36 , C30B23/00 , C30B23/066 , C30B35/00 , Y10T117/1068
摘要： The invention provides an apparatus for manufacturing good quality single-crystal silicon carbide stably without formation of cracks and the like, which apparatus comprises: at least a crucible for accommodating silicon carbide feedstock powder and seed crystal; heat insulation material installed around the crucible; and a heating device for heating the crucible, wherein the outer profile of the crucible includes at least one region of narrower diameter than a vertically adjacent region, insulation material is also installed in the space left by the diameter difference, and thickness of the insulation material at the narrower diameter region is greater than that of the insulation material at the vertically adjacent region. The apparatus for manufacturing single-crystal silicon carbide enables precise control of the temperature gradient inside the crucible, thereby enabling manufacture of good quality single-crystal silicon carbide.
摘要翻译：本发明提供了一种用于稳定地制造质量好的单晶碳化硅而不形成裂纹等的装置，该装置包括：至少一个用于容纳碳化硅原料粉末和晶种的坩埚; 隔热材料安装在坩埚周围; 以及用于加热坩埚的加热装置，其中坩埚的外部轮廓包括至少一个比垂直相邻区域更窄直径的区域，绝缘材料也安装在留有直径差的空间中，绝缘材料的厚度在较窄直径区域处，比垂直相邻区域处的绝缘材料大。用于制造单晶碳化硅的装置能够精确地控制坩埚内的温度梯度，从而能够制造出优质的单晶碳化硅。

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