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11. 发明申请

US20080201126A1 Method of Automatically Generating the Structures From Mask Layout 审中-公开
标题翻译：从面板布局自动生成结构的方法
公开(公告)号：US20080201126A1
公开(公告)日：2008-08-21
申请号：US10552132
申请日：2004-05-19
申请人： Tae Young Won , Sang Ho Yoon
发明人： Tae Young Won , Sang Ho Yoon
IPC分类号： G06F17/50
CPC分类号： H01L27/1288 , G02F2001/136231 , G02F2001/13625 , G06F17/50 , G06F17/5009 , H01L27/1214
摘要： A method of defining three-dimensional structure from mask layout for computer simulation, which provides a technology for defining a three-dimensional structure of liquid crystal cell which comprises a apparatus of liquid crystal display for designing and analyzing a apparatus of liquid crystal display.A method of generating three-dimensional structure which comprised of material layers between upper substrate and lower substrate, which provides a generation method of three-dimensional structure for computer simulation by depositing material layers under the upper substrate and over the lower substrate, and sandwiching a center insertion layer between the deposited upper and lower material layers for a case which includes tapered structure of material layer for the substrate.
摘要翻译：一种用于计算机模拟的掩模布局定义三维结构的方法，其提供了用于限定液晶单元的三维结构的技术，该技术包括用于设计和分析液晶显示装置的液晶显示装置。一种生成由上基板和下基板之间的材料层构成的三维结构的方法，其通过在上基板下方并在下基板上沉积材料层而提供用于计算机模拟的三维结构的生成方法，用于包括用于衬底的材料层的锥形结构的壳体的沉积的上部和下部材料层之间的中心插入层。

12. 发明授权

US07095769B2 Semiconductor laser diode with higher-order mode absorption layers 有权
标题翻译：具有高阶模式吸收层的半导体激光二极管
公开(公告)号：US07095769B2
公开(公告)日：2006-08-22
申请号：US10812029
申请日：2004-03-30
申请人： Sang Ho Yoon , Gueorgui Pak , In Eung Kim
发明人： Sang Ho Yoon , Gueorgui Pak , In Eung Kim
IPC分类号： H01S3/098 , H01S5/20 , H01S5/00
CPC分类号： G11B7/127 , H01S5/2004 , H01S5/2022 , H01S5/2206 , H01S5/2231 , H01S5/3211 , H01S5/3216
摘要： A semiconductor laser diode capable of achieving an improvement in kink level and an improvement in catastrophic optical damage (COD) level. The semiconductor laser diode includes a first-conductivity type semiconductor substrate, a first-conductivity type clad layer formed over the substrate, an active layer formed over the first-conductivity type clad layer, a second-conductivity type clad layer formed over the active layer, and provided with a ridge, and a light confining layer formed on the second-conductivity type clad layer, and made of a first-conductivity type semiconductor material, the light confining layer including higher-order mode absorption layers having an energy band gap lower than optical energy produced in the active layer, and refractive index control layers having a refractive index lower than that of the higher-order mode absorption layers. The higher-order mode absorption layers and refractive index control layers are laminated in an alternate manner.
摘要翻译：能够实现扭结水平提高和灾难性光学损伤（COD）水平改善的半导体激光二极管。半导体激光二极管包括第一导电型半导体衬底，形成在衬底上的第一导电型覆盖层，形成在第一导电型覆盖层上的有源层，形成在有源层上的第二导电型覆盖层并且设置有脊，以及形成在第二导电型覆盖层上并由第一导电型半导体材料制成的限光层，所述光限制层包括具有较低能带隙的高阶模吸收层比在有源层中产生的光能量和折射率低于高阶模吸收层的折射率控制层。以交替的方式层叠高阶模吸收层和折射率控制层。

13. 发明授权

US08168454B2 Vertical light emitting diode and method of manufacturing the same 有权
标题翻译：垂直发光二极管及其制造方法
公开(公告)号：US08168454B2
公开(公告)日：2012-05-01
申请号：US12466086
申请日：2009-05-14
申请人： Su Yeol Lee , Sang Ho Yoon , Doo Go Baik , Seok Beom Choi , Tae Sung Jang , Jong Gun Woo
发明人： Su Yeol Lee , Sang Ho Yoon , Doo Go Baik , Seok Beom Choi , Tae Sung Jang , Jong Gun Woo
IPC分类号： H01L21/00
CPC分类号： H01L33/32 , H01L33/14 , H01L33/40
摘要： Provided is a vertical LED including an n-electrode; an n-type GaN layer formed under the n-electrode, the n-type GaN layer having a surface coming in contact with the n-electrode, the surface having a Ga+N layer containing a larger amount of Ga than that of N; an active layer formed under the n-type GaN layer; a p-type GaN layer formed under the active layer; a p-electrode formed under the p-type GaN layer; and a structure support layer formed under the p-electrode.
摘要翻译：提供包括n电极的垂直LED; 形成在n电极下面的n型GaN层，n型GaN层具有与n电极接触的表面，该表面具有比N大的Ga的Ga + N层; 形成在n型GaN层下面的有源层; 形成在有源层下面的p型GaN层; 形成在p型GaN层下面的p电极; 以及在p电极下面形成的结构支撑层。

14. 发明授权

US08198114B2 Vertical nitride semiconductor light emitting diode and method of manufacturing the same 有权
标题翻译：垂直氮化物半导体发光二极管及其制造方法
公开(公告)号：US08198114B2
公开(公告)日：2012-06-12
申请号：US12909297
申请日：2010-10-21
申请人： Sang Ho Yoon , Su Yeol Lee , Doo Go Baik , Seok Beom Choi , Tae Sung Jang , Jong Gun Woo
发明人： Sang Ho Yoon , Su Yeol Lee , Doo Go Baik , Seok Beom Choi , Tae Sung Jang , Jong Gun Woo
IPC分类号： H01L21/56
CPC分类号： H01L33/22 , H01L33/0079 , H01L33/20
摘要： A vertical nitride-based semiconductor LED comprises a structure support layer; a p-electrode formed on the structure support layer; a p-type nitride semiconductor layer formed on the p-electrode; an active layer formed on the p-type nitride semiconductor layer; an n-type nitride semiconductor layer formed on the active layer; an n-electrode formed on a portion of the n-type nitride semiconductor layer; and a buffer layer formed on a region of the n-type nitride semiconductor layer on which the n-electrode is not formed, the buffer layer having irregularities formed thereon. The surface of the n-type nitride semiconductor layer coming in contact with the n-electrode is flat.
摘要翻译：垂直氮化物基半导体LED包括结构支撑层; 形成在结构支撑层上的p电极; 形成在p电极上的p型氮化物半导体层; 形成在p型氮化物半导体层上的有源层; 形成在有源层上的n型氮化物半导体层; 形成在n型氮化物半导体层的一部分上的n电极; 以及形成在其上未形成有n电极的n型氮化物半导体层的区域上的缓冲层，其上形成有凹凸。与n电极接触的n型氮化物半导体层的表面是平坦的。

15. 发明授权

US07872276B2 Vertical gallium nitride-based light emitting diode and method of manufacturing the same 有权
标题翻译：立式氮化镓系发光二极管及其制造方法
公开(公告)号：US07872276B2
公开(公告)日：2011-01-18
申请号：US11742818
申请日：2007-05-01
申请人： Su Yeol Lee , Bang Won Oh , Doo Go Baik , Tae Sung Jang , Jong Gun Woo , Seok Beom Choi , Sang Ho Yoon , Dong Woo Kim , In Tae Yeo
发明人： Su Yeol Lee , Bang Won Oh , Doo Go Baik , Tae Sung Jang , Jong Gun Woo , Seok Beom Choi , Sang Ho Yoon , Dong Woo Kim , In Tae Yeo
IPC分类号： H01L33/00
CPC分类号： H01L33/387 , H01L33/20 , H01L33/22 , H01L33/405 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： A method of manufacturing a vertical GaN-based LED comprises forming a light emission structure in which an n-type GaN-based semiconductor layer, an active layer, and a p-type GaN-based semiconductor layer are sequentially laminated on a substrate; etching the light emission structure such that the light emission structure is divided into units of LED; forming a p-electrode on each of the divided light emission structures; filling a non-conductive material between the divided light emission structures; forming a metal seed layer on the resulting structure; forming a first plated layer on the metal seed layer excluding a region between the light emission structures; forming a second plated layer on the metal seed layer between the first plated layers; separating the substrate from the light emission structures; removing the non-conductive material between the light emission structures exposed by separating the substrate; forming an n-electrode on the n-type GaN-based semiconductor layer; and removing portions of the metal seed layer and the second plated layer between the light emission structures.
摘要翻译：制造垂直GaN基LED的方法包括：形成其中n型GaN基半导体层，有源层和p型GaN基半导体层依次层压在基板上的发光结构; 蚀刻发光结构，使得发光结构被分为LED单元; 在每个划分的发光结构上形成p电极; 在分开的发光结构之间填充非导电材料; 在所得结构上形成金属种子层; 在所述金属种子层上形成除了所述发光结构之间的区域的第一镀层; 在所述第一镀层之间的所述金属种子层上形成第二镀层; 将衬底与发光结构分离; 去除通过分离衬底而暴露的发光结构之间的非导电材料; 在n型GaN基半导体层上形成n电极; 以及去除所述发光结构之间的所述金属种子层和所述第二镀层的部分。

16. 发明申请

US20080093618A1 Vertical light emitting diode and method of manufacturing the same 有权
标题翻译：垂直发光二极管及其制造方法
公开(公告)号：US20080093618A1
公开(公告)日：2008-04-24
申请号：US11889562
申请日：2007-08-14
申请人： Su Yeol Lee , Sang Ho Yoon , Doo Go Baik , Seok Beom Choi , Tae Sung Jang , Jong Gun Woo
发明人： Su Yeol Lee , Sang Ho Yoon , Doo Go Baik , Seok Beom Choi , Tae Sung Jang , Jong Gun Woo
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L33/14 , H01L33/40
摘要： Provided is a vertical LED including an n-electrode; an n-type GaN layer formed under the n-electrode, the n-type GaN layer having a surface coming in contact with the n-electrode, the surface having a Ga+N layer containing a larger amount of Ga than that of N; an active layer formed under the n-type GaN layer; a p-type GaN layer formed under the active layer; a p-electrode formed under the p-type GaN layer; and a structure support layer formed under the p-electrode.
摘要翻译：提供包括n电极的垂直LED; 形成在n电极下面的n型GaN层，所述n型GaN层具有与n电极接触的表面，所述表面具有含有较大量的Ga + N层的Ga; 形成在n型GaN层下面的有源层; 形成在有源层下面的p型GaN层; 形成在p型GaN层下面的p电极; 以及在p电极下面形成的结构支撑层。

17. 发明授权

US08115220B2 Vertical light emitting diode and method of manufacturing the same 有权
公开(公告)号：US08115220B2
公开(公告)日：2012-02-14
申请号：US11889562
申请日：2007-08-14
申请人： Su Yeol Lee , Sang Ho Yoon , Doo Go Baik , Seok Beom Choi , Tae Sung Jang , Jong Gun Woo
发明人： Su Yeol Lee , Sang Ho Yoon , Doo Go Baik , Seok Beom Choi , Tae Sung Jang , Jong Gun Woo
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L33/14 , H01L33/40
摘要： Provided is a vertical LED including an n-electrode; an n-type GaN layer formed under the n-electrode, the n-type GaN layer having a surface coming in contact with the n-electrode, the surface having a Ga+N layer containing a larger amount of Ga than that of N; an active layer formed under the n-type GaN layer; a p-type GaN layer formed under the active layer; a p-electrode formed under the p-type GaN layer; and a structure support layer formed under the p-electrode.

18. 发明授权

US07687818B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US07687818B2
公开(公告)日：2010-03-30
申请号：US12177517
申请日：2008-07-22
申请人： Sang Ho Yoon , Su Yeol Lee , Doo Go Baik , Seok Beom Choi , Tae Sung Jang , Jong Gun Woo
发明人： Sang Ho Yoon , Su Yeol Lee , Doo Go Baik , Seok Beom Choi , Tae Sung Jang , Jong Gun Woo
IPC分类号： H01L33/00
CPC分类号： H01L33/46 , H01L33/0079 , H01L33/145 , H01L33/405
摘要： There is provided a semiconductor light emitting device having excellent light extraction efficiency to efficiently reflect light moving into the device by increasing the total reflectivity of a reflective layer. A semiconductor light emitting device according to an aspect of the invention includes: a substrate, a reflective electrode, a first conductivity semiconductor layer, an active layer, and a second conductivity type semiconductor layer that are sequentially stacked. Here, the reflective electrode includes; a first reflective layer provided on the substrate and including a conductive reflective material reflecting light generated from the active layer; and a second reflective layer provided on the first reflective layer, including one or more dielectric portions reflecting light generated from the active layer, and one or more contact holes filled with a conductive filler to electrically connect the first conductivity type semiconductor layer and the first reflective layer, and having a greater thickness than a wavelength of the generated light.
摘要翻译：提供了具有优异的光提取效率的半导体发光器件，以通过增加反射层的总反射率来有效地反射移入器件的光。根据本发明的一个方面的半导体发光器件包括：依次堆叠的衬底，反射电极，第一导电半导体层，有源层和第二导电类型半导体层。这里，反射电极包括：第一反射层，设置在所述基板上，并且包括反射从所述有源层产生的光的导电反射材料; 以及设置在所述第一反射层上的第二反射层，包括反射从所述有源层产生的光的一个或多个介电部分和填充有导电填料的一个或多个接触孔，以将所述第一导电类型半导体层和所述第一反射层并且具有比所产生的光的波长更大的厚度。

19. 发明申请

US20090258454A1 METHOD OF MANUFACTURING GALLIUM NITRIDE BASED LIGHT EMITTING DIODE HAVING SURFACE IRREGULARITIES 审中-公开
标题翻译：制造具有表面不规则性的基于氮化镓的发光二极管的方法
公开(公告)号：US20090258454A1
公开(公告)日：2009-10-15
申请号：US12490891
申请日：2009-06-24
申请人： Dae Yeon KIM , Sung Min Hwang , Jin Bock Lee , Sang Ho Yoon
发明人： Dae Yeon KIM , Sung Min Hwang , Jin Bock Lee , Sang Ho Yoon
IPC分类号： H01L21/20 , H01L33/00
CPC分类号： H01L33/22 , H01L33/44
摘要： An n-type GaN layer is formed on a substrate, and an active layer is formed on the n-type GaN layer. A p-type GaN layer is formed on the active layer, and portions of the p-type GaN layer and the active layer are mesa-etched so as to expose a portion of the n-type GaN layer. An irregularities forming layer is formed on the p-type GaN layer and a photosensitive film pattern for forming a surface irregularities pattern is formed on the irregularities forming layer. The irregularities forming layer is selectively wet-etched by using the photosensitive film pattern as an etching mask, thereby forming surface irregularities. A p-electrode is formed on the p-type GaN layer having the surface irregularities formed thereon, and an n-electrode is formed on the exposed n-type GaN layer.”
摘要翻译：在衬底上形成n型GaN层，在n型GaN层上形成有源层。在有源层上形成p型GaN层，并且对p型GaN层和有源层的部分进行台面蚀刻，以暴露n型GaN层的一部分。在p型GaN层上形成凹凸形成层，在凹凸形成层上形成用于形成表面凹凸图案的感光膜图案。通过使用感光膜图案作为蚀刻掩模来选择性地湿法蚀刻不规则形成层，从而形成表面不规则。在其上形成有表面凹凸的p型GaN层上形成p电极，在暴露的n型GaN层上形成n电极。

20. 发明申请

US20090221110A1 VERTICAL LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：垂直发光二极管及其制造方法
公开(公告)号：US20090221110A1
公开(公告)日：2009-09-03
申请号：US12466086
申请日：2009-05-14
申请人： Su Yeol LEE , Sang Ho Yoon , Doo Go Baik , Seok Beom Choi , Tae Sung Jang , Jong Gun Woo
发明人： Su Yeol LEE , Sang Ho Yoon , Doo Go Baik , Seok Beom Choi , Tae Sung Jang , Jong Gun Woo
IPC分类号： H01L21/28
CPC分类号： H01L33/32 , H01L33/14 , H01L33/40
摘要： Provided is a vertical LED including an n-electrode; an n-type GaN layer formed under the n-electrode, the n-type GaN layer having a surface coming in contact with the n-electrode, the surface having a Ga+N layer containing a larger amount of Ga than that of N; an active layer formed under the n-type GaN layer; a p-type GaN layer formed under the active layer; a p-electrode formed under the p-type GaN layer; and a structure support layer formed under the p-electrode.
摘要翻译：提供包括n电极的垂直LED; 形成在n电极下面的n型GaN层，n型GaN层具有与n电极接触的表面，该表面具有比N大的Ga的Ga + N层; 形成在n型GaN层下面的有源层; 形成在有源层下面的p型GaN层; 形成在p型GaN层下面的p电极; 以及在p电极下面形成的结构支撑层。

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