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11. 发明申请

US20050092234A1 Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrate 失效
标题翻译：生长GaN晶体的方法，单晶GaN衬底的制造方法和单晶GaN衬底
公开(公告)号：US20050092234A1
公开(公告)日：2005-05-05
申请号：US10933291
申请日：2004-09-03
申请人： Kensaku Motoki , Takuji Okahisa , Ryu Hirota , Seiji Nakahata , Koji Uematsu
发明人： Kensaku Motoki , Takuji Okahisa , Ryu Hirota , Seiji Nakahata , Koji Uematsu
IPC分类号： C30B25/18 , C30B29/40 , C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14
CPC分类号： C30B29/40 , C30B25/18
摘要： Dotted seeds are implanted in a regular pattern upon an undersubstrate. A GaN crystal is grown on the seed implanted undersubstrate by a facet growth method. The facet growth makes facet pits above the seeds. The facets assemble dislocations from neighboring regions, accumulate the dislocations into pit bottoms, and make closed defect accumulating regions (H) on the seeds. The polycrystalline or slanting orientation single crystal closed defect accumulating regions (H) induce microcracks due to thermal expansion anisotropy. The best one is orientation-inversion single crystal closed defect accumulating regions (H). At an early stage, orientation-inverse protrusions are induced on tall facets and unified with each other above the seeds. Orientation-inverse crystals growing on the unified protrusions become the orientation-inverse single crystal closed defect accumulating regions (H).
摘要翻译：点状种子以规则图案植入下衬底。通过小面生长法在种植植入的底物上生长GaN晶体。小面生长使种子凹陷在种子上方。方面组装相邻区域的位错，将位错累积到坑底，并在种子上形成闭合缺陷积聚区（H）。多晶或倾斜取向单晶闭合缺陷积聚区（H）由于热膨胀各向异性而引起微裂纹。最好的是定向反转单晶闭合缺陷积聚区（H）。在早期阶段，在高面上诱导取向反突起，并在种子之上彼此统一。在均匀突起上生长的取向反相晶体成为取向反单晶闭合缺陷积聚区（H）。

12. 发明申请

US20070148920A1 Fabrication method and fabrication apparatus of group III nitride crystal substance 有权
标题翻译： III族氮化物晶体物质的制造方法和制造装置
公开(公告)号：US20070148920A1
公开(公告)日：2007-06-28
申请号：US11643675
申请日：2006-12-22
申请人： Hitoshi Kasai , Takuji Okahisa , Shunsuke Fujita , Naoki Matsumoto , Hideyuki Ijiri , Fumitaka Sato , Kensaku Motoki , Seiji Nakahata , Koji Uematsu , Ryu Hirota
发明人： Hitoshi Kasai , Takuji Okahisa , Shunsuke Fujita , Naoki Matsumoto , Hideyuki Ijiri , Fumitaka Sato , Kensaku Motoki , Seiji Nakahata , Koji Uematsu , Ryu Hirota
IPC分类号： H01L21/20 , C23C16/00
CPC分类号： H01L21/02617 , C23C16/303 , C23C16/4405 , C23C16/4488 , C30B23/02 , C30B25/02 , C30B29/403
摘要： A fabrication method of a group III nitride crystal substance includes the steps of cleaning the interior of a reaction chamber by introducing HCl gas into the reaction chamber, and vapor deposition of a group III nitride crystal substance in the cleaned reaction chamber. A fabrication apparatus of a group III nitride crystal substance includes a configuration to introduce HCl gas into the reaction chamber, and a configuration to grow a group III nitride crystal substance by HVPE. Thus, a fabrication method of a group III nitride crystal substance including the method of effectively cleaning deposits adhering inside the reaction chamber during crystal growth, and a fabrication apparatus employed in the fabrication method are provided.
摘要翻译： III族氮化物晶体物质的制造方法包括以下步骤：通过将HCl气体引入反应室来清洗反应室的内部，并将III族氮化物结晶物质气相沉积在清洁的反应室中。 III族氮化物晶体物质的制造装置包括将HCl气体引入反应室的结构，以及通过HVPE生长III族氮化物结晶物质的结构。因此，提供了包括在晶体生长期间有效清洁附着在反应室内的沉积物的方法的III族氮化物晶体物质的制造方法以及制造方法中使用的制造装置。

13. 发明授权

US07112826B2 Single crystal GaN substrate semiconductor device 有权
标题翻译：单晶GaN衬底半导体器件
公开(公告)号：US07112826B2
公开(公告)日：2006-09-26
申请号：US10700495
申请日：2003-11-05
申请人： Kensaku Motoki , Takuji Okahisa , Seiji Nakahata , Ryu Hirota , Koji Uematsu
发明人： Kensaku Motoki , Takuji Okahisa , Seiji Nakahata , Ryu Hirota , Koji Uematsu
IPC分类号： H01L33/00
CPC分类号： C30B25/02 , C30B25/18 , C30B25/183 , C30B29/406 , H01L21/02381 , H01L21/02395 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L21/02642 , H01L21/02647
摘要： Seeds are implanted in a regular pattern upon an undersubstrate. A GaN crystal is grown on the seed implanted undersubstrate by a facet growth method. The facet growth makes facet pits above the seeds. The facets assemble dislocations to the pit bottoms from neighboring regions and make closed defect accumulating regions (H) under the facet bottoms. The closed defect accumulating regions (H) arrest dislocations permanently. Release of dislocations, radial planar defect assemblies and linear defect assemblies are forbidden. The surrounding accompanying low dislocation single crystal regions (Z) and extra low dislocation single crystal regions (Y) are low dislocation density single crystals.
摘要翻译：将种子以规则的图案植入到下衬底上。通过小面生长法在种植植入的底物上生长GaN晶体。小面生长使种子凹陷在种子上方。小面从相邻区域组装到底坑的位错，并在底面下方形成闭合缺陷积聚区域（H）。闭合缺陷积聚区（H）永久性停滞位错。释放位错，径向平面缺陷组件和线性缺陷组件被禁止。周围伴随的低位错单晶区（Z）和超低位错单晶区（Y）是位错密度单晶。

14. 发明授权

US07534310B2 Single crystal GaN substrate, method of growing single crystal GaN and method of producing single crystal GaN substrate 有权
标题翻译：单晶GaN衬底，生长单晶GaN的方法和制造单晶GaN衬底的方法
公开(公告)号：US07534310B2
公开(公告)日：2009-05-19
申请号：US11434744
申请日：2006-05-17
申请人： Kensaku Motoki , Ryu Hirota , Takuji Okahisa , Seiji Nakahata
发明人： Kensaku Motoki , Ryu Hirota , Takuji Okahisa , Seiji Nakahata
IPC分类号： C30B29/38
CPC分类号： C30B29/406 , C30B23/002 , C30B25/02 , C30B29/403
摘要： A low dislocation density GaN single crystal substrate is made by forming a seed mask having parallel stripes regularly and periodically aligning on an undersubstrate, growing a GaN crystal on a facet-growth condition, forming repetitions of parallel facet hills and facet valleys rooted upon the mask stripes, maintaining the facet hills and facet valleys, producing voluminous defect accumulating regions (H) accompanying the valleys, yielding low dislocation single crystal regions (Z) following the facets, making C-plane growth regions (Y) following flat tops between the facets, gathering dislocations on the facets into the valleys by the action of the growing facets, reducing dislocations in the low dislocation single crystal regions (Z) and the C-plane growth regions (Y), and accumulating the dislocations in cores (S) or interfaces (K) of the voluminous defect accumulating regions (H).
摘要翻译：低位错密度GaN单晶衬底通过形成具有平行条纹的种子掩模，并且定期地在下衬底上周期性地对准，在面生长条件下生长GaN晶体，形成平行的小平面重叠和基于掩模的小平面谷条纹，保持小平面山丘和小平面谷，产生伴随谷的大量缺陷积聚区域（H），产生小面后的低位错单晶区域（Z），使平面生长区域（Y）在平面之后通过生长小面的作用将小面上的面陷入谷中，减少低位错单晶区（Z）和C平面生长区（Y）中的位错，并在芯（S）或大量缺陷积聚区（H）的界面（K）。

15. 发明申请

US20080202409A1 Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrate 有权
标题翻译：生长GaN晶体的方法，单晶GaN衬底的制造方法和单晶GaN衬底
公开(公告)号：US20080202409A1
公开(公告)日：2008-08-28
申请号：US12068891
申请日：2008-02-13
申请人： Kensaku Motoki , Ryu Hirota , Takuji Okahisa , Seiji Nakahata
发明人： Kensaku Motoki , Ryu Hirota , Takuji Okahisa , Seiji Nakahata
IPC分类号： C30B23/04
CPC分类号： C30B29/406 , C30B23/002 , C30B25/02 , C30B29/403
摘要： A low dislocation density GaN single crystal substrate is made by forming a seed mask having parallel stripes regularly and periodically aligning on an undersubstrate, growing a GaN crystal on a facet-growth condition, forming repetitions of parallel facet hills and facet valleys rooted upon the mask stripes, maintaining the facet hills and facet valleys, producing voluminous defect accumulating regions (H) accompanying the valleys, yielding low dislocation single crystal regions (Z) following the facets, making C-plane growth regions (Y) following flat tops between the facets, gathering dislocations on the facets into the valleys by the action of the growing facets, reducing dislocations in the low dislocation single crystal regions (Z) and the C-plane growth regions (Y), and accumulating the dislocations in cores (S) or interfaces (K) of the voluminous defect accumulating regions (H).
摘要翻译：低位错密度GaN单晶衬底通过形成具有平行条纹的种子掩模，并且定期地在下衬底上周期性地对准，在面生长条件下生长GaN晶体，形成平行的小平面重叠和基于掩模的小平面谷条纹，保持小平面山丘和小平面谷，产生伴随谷的大量缺陷积聚区域（H），产生小面后的低位错单晶区域（Z），使平面生长区域（Y）在平面之后通过生长小面的作用将小面上的面陷入谷中，减少低位错单晶区（Z）和C平面生长区（Y）中的位错，并在芯（S）或大量缺陷积聚区（H）的界面（K）。

16. 发明授权

US08198177B2 AlxInyGal-x-yN mixture crystal substrate, method of growing same and method of producing same 有权
标题翻译： AlxInyGal-x-yN混合晶体衬底，其生长方法及其生产方法
公开(公告)号：US08198177B2
公开(公告)日：2012-06-12
申请号：US13281106
申请日：2011-10-25
申请人： Seiji Nakahata , Ryu Hirota , Kensaku Motoki , Takuji Okahisa , Kouji Uematsu
发明人： Seiji Nakahata , Ryu Hirota , Kensaku Motoki , Takuji Okahisa , Kouji Uematsu
IPC分类号： H01L21/322
CPC分类号： C30B29/406 , C30B25/02 , C30B25/18 , C30B25/183 , C30B29/40 , C30B29/403 , H01L21/02381 , H01L21/02395 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L21/02642 , H01L21/02647
摘要： Seeds are implanted in a regular pattern upon an undersubstrate. An AlxInyGa1-x-yN (0≦x≦1, 0≦y≦1, 0
摘要翻译：将种子以规则的图案植入到下衬底上。通过小平面生长法在混合晶体生长在种子植入的底层基底上，使Al x In y Ga 1-x-y N（0＆nlE; x＆nlE; 1,0＆amp; nlE; y＆nlE; 1,0

17. 发明授权

US07794543B2 Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrate 有权
标题翻译：生长GaN晶体的方法，单晶GaN衬底的制造方法和单晶GaN衬底
公开(公告)号：US07794543B2
公开(公告)日：2010-09-14
申请号：US12068891
申请日：2008-02-13
申请人： Kensaku Motoki , Ryu Hirota , Takuji Okahisa , Seiji Nakahata
发明人： Kensaku Motoki , Ryu Hirota , Takuji Okahisa , Seiji Nakahata
IPC分类号： C30B25/04
CPC分类号： C30B29/406 , C30B23/002 , C30B25/02 , C30B29/403
摘要： A low dislocation density GaN single crystal substrate is made by forming a seed mask having parallel stripes regularly and periodically aligning on an undersubstrate, growing a GaN crystal on a facet-growth condition, forming repetitions of parallel facet hills and facet valleys rooted upon the mask stripes, maintaining the facet hills and facet valleys, producing voluminous defect accumulating regions (H) accompanying the valleys, yielding low dislocation single crystal regions (Z) following the facets, making C-plane growth regions (Y) following flat tops between the facets, gathering dislocations on the facets into the valleys by the action of the growing facets, reducing dislocations in the low dislocation single crystal regions (Z) and the C-plane growth regions (Y), and accumulating the dislocations in cores (S) or interfaces (K) of the voluminous defect accumulating regions (H).
摘要翻译：低位错密度GaN单晶衬底通过形成具有平行条纹的种子掩模，并且定期地在下衬底上周期性地对准，在面生长条件下生长GaN晶体，形成平行的小平面重叠和基于掩模的小平面谷条纹，保持小平面山丘和小平面谷，产生伴随谷的大量缺陷积聚区域（H），产生小面后的低位错单晶区域（Z），使平面生长区域（Y）在平面之后通过生长小面的作用将小面上的面陷入谷中，减少低位错单晶区（Z）和C平面生长区（Y）中的位错，并在芯（S）或大量缺陷积聚区（H）的界面（K）。

18. 发明授权

US07655960B2 A1xInyGa1-x-yN mixture crystal substrate, method of growing same and method of producing same 有权
标题翻译： AlxInyGa1-x-yN混合晶体基板，其生长方法及其制造方法
公开(公告)号：US07655960B2
公开(公告)日：2010-02-02
申请号：US11501817
申请日：2006-08-10
申请人： Seiji Nakahata , Ryu Hirota , Kensaku Motoki , Takuji Okahisa , Kouji Uematsu
发明人： Seiji Nakahata , Ryu Hirota , Kensaku Motoki , Takuji Okahisa , Kouji Uematsu
IPC分类号： H01L33/00
CPC分类号： C30B29/406 , C30B25/02 , C30B25/18 , C30B25/183 , C30B29/40 , C30B29/403 , H01L21/02381 , H01L21/02395 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L21/02642 , H01L21/02647
摘要： Seeds are implanted in a regular pattern upon an undersubstrate. An AlxInyGa1−x−yN (0≦x≦1, 0≦y≦1, 0
摘要翻译：将种子以规则的图案植入到下衬底上。通过小面生长法在种子植入的底层上生长Al x In y Ga 1-x-y N（0 <= x <= 1,0 <= y <= 1,0

19. 发明授权

US07087114B2 Single crystal GaN substrate, method of growing single crystal GaN and method of producing single crystal GaN substrate 有权
公开(公告)号：US07087114B2
公开(公告)日：2006-08-08
申请号：US10265719
申请日：2002-10-08
申请人： Kensaku Motoki , Ryu Hirota , Takuji Okahisa , Seiji Nakahata
发明人： Kensaku Motoki , Ryu Hirota , Takuji Okahisa , Seiji Nakahata
IPC分类号： C30B25/16
CPC分类号： C30B29/406 , C30B23/002 , C30B25/02 , C30B29/403
摘要： A low dislocation density GaN single crystal substrate is made by forming a seed mask having parallel stripes regularly and periodically aligning on an undersubstrate, growing a GaN crystal on a facet-growth condition, forming repetitions of parallel facet hills and facet valleys rooted upon the mask stripes, maintaining the facet hills and facet valleys, producing voluminous defect accumulating regions (H) accompanying the valleys, yielding low dislocation single crystal regions (Z) following the facets, making C-plane growth regions (Y) following flat tops between the facets, gathering dislocations on the facets into the valleys by the action of the growing facets, reducing dislocations in the low dislocation single crystal regions (Z) and the C-plane growth regions (Y), and accumulating the dislocations in cores (S) or interfaces (K) of the voluminous defect accumulating regions (H).

20. 发明申请

US20050076830A1 Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrate 失效
标题翻译：生长GaN晶体的方法，单晶GaN衬底的制造方法和单晶GaN衬底
公开(公告)号：US20050076830A1
公开(公告)日：2005-04-14
申请号：US10936512
申请日：2004-09-09
申请人： Kensaku Motoki , Ryu Hirota , Takuji Okahisa , Seiji Nakahata
发明人： Kensaku Motoki , Ryu Hirota , Takuji Okahisa , Seiji Nakahata
IPC分类号： C30B23/02 , C30B25/02 , C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14
CPC分类号： C30B23/02 , C30B25/02 , C30B29/403 , C30B29/406
摘要： A low dislocation density GaN single crystal substrate is made by forming a seed mask having parallel stripes regularly and periodically aligning on an undersubstrate, growing a GaN crystal on a facet-growth condition, forming repetitions of parallel facet hills and facet valleys rooted upon the mask stripes, maintaining the facet hills and facet valleys, producing voluminous defect accumulating regions (H) accompanying the valleys, yielding low dislocation single crystal regions (Z) following the facets, making C-plane growth regions (Y) following flat tops between the facets, gathering dislocations on the facets into the valleys by the action of the growing facets, reducing dislocations in the low dislocation single crystal regions (Z) and the C-plane growth regions (Y), and accumulating the dislocations in cores (S) or interfaces (K) of the voluminous defect accumulating regions (H).
摘要翻译：低位错密度GaN单晶衬底通过形成具有平行条纹的种子掩模，并且定期地在下衬底上周期性地对准，在面生长条件下生长GaN晶体，形成平行的小平面重叠和基于掩模的小平面谷条纹，保持小平面山丘和小平面谷，产生伴随谷的大量缺陷积聚区域（H），产生小面后的低位错单晶区域（Z），使平面生长区域（Y）在平面之后通过生长小面的作用将小面上的面陷入谷中，减少低位错单晶区（Z）和C平面生长区（Y）中的位错，并在芯（S）或大量缺陷积聚区（H）的界面（K）。

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