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    • 11. 发明授权
    • Joint for use in fluid control apparatus
    • 用于流体控制装置的接头
    • US07841628B2
    • 2010-11-30
    • US11606974
    • 2006-12-01
    • Ichiro TokudaMichio YamajiKenji TsubotaTsutomu ShinoharaNobukazu Ikeda
    • Ichiro TokudaMichio YamajiKenji TsubotaTsutomu ShinoharaNobukazu Ikeda
    • F16L39/00
    • F16L39/00Y10T137/87885
    • A rectangular parallelepipedal joint for use in fluid control apparatus comprises in its entirety two divided members which are a grooved connecting member having a groove in its center and provided in portions thereof on respective opposite sides of the groove with bolt holes each having a stepped portion for receiving therein a joint attaching bolt without permitting the head thereof to project from the joint and with female screw portions for respective male screw members to be screwed in for attaching an apparatus component; and a flat rectangular parallelepipedal communication member fitting in the groove of the connecting member and provided only with a U-shaped communication channel. The connecting member is made of stainless steel, while the communication member is made of polyamide 6. A positioning protrusion is formed on a bottom face defining the groove of the connecting member and is fitted in a positioning recessed portion formed in the bottom surface of the communication member.
    • 用于流体控制装置的长方体接头整体上包括两个分开的构件,它们是一个带槽的连接构件,在其中心具有槽,并且在槽的相应相对侧上设置有一部分槽,每个螺栓孔具有阶梯部分, 在其中容纳接头连接螺栓,而不允许其头部从接头突出并且具有内螺纹部分,用于要拧入的用于附接设备部件的各个外螺纹部件; 以及安装在连接构件的凹槽中并且仅设置有U形通信通道的平坦的长方体连通构件。 连接构件由不锈钢制成,而连通构件由聚酰胺6制成。定位突起形成在限定连接构件的槽的底面上,并且嵌合在形成在该连接构件的底表面中的定位凹部中 沟通会员
    • 14. 发明授权
    • Thin film aluminum alloy and sputtering target to form the same
    • 薄膜铝合金和溅射靶形成相同
    • US06791188B2
    • 2004-09-14
    • US10228064
    • 2002-08-27
    • Junichiro HagiharaIchiro Tokuda
    • Junichiro HagiharaIchiro Tokuda
    • H01L2348
    • H01L21/2855C22F1/04C23C14/14C23C14/3414G02F2001/136295H01L23/49866H01L23/53219H01L2924/0002H01L2924/00
    • Disclosed is a thin film aluminum alloy which is limited in the generation of hillocks while maintaining a low specific resistance and hardness irrespective of annealing temperature. In order to obtain the thin film aluminum alloy having a Vickers hardness of 30 Hv or less and a film stress (absolute value indication) of 30 kg/mm2 or less when performing annealing treatment at a temperature ranging from 25° C. to 500° C., wherein said hardness and said film stress are distributed in a predetermined hardness range and in a predetermined film stress range respectively within the temperature range of the above-mentioned annealing treatment and are respectively almost constant against annealing temperature, the thin film aluminum alloy being formed as a film on a substrate by a sputtering method using a sputtering target having a composition comprising 0.5 to 15 atom % of one or more types selected from Ag, Cu, Mg and Zn and 0.01 to 5 atom % of one or more types selected from Co, Cr, Gd, Hf, Li, Mn, Mo, Nb, Nd, Ni, Pd, Pt, Ru, Sc, Sr, Ta, Ti, W, Y and Zr, and, as remnant, Al and unavoidable impurities.
    • 公开了一种薄膜铝合金,其在保持低电阻率和硬度的同时限制了小丘的产生,而与退火温度无关。 为了在25℃的温度下进行退火处理,得到维氏硬度为30HV以下的薄膜铝合金和30kg / mm 2以下的薄膜应力(绝对值表示) 至500℃,其中所述硬度和所述薄膜应力在上述退火处理的温度范围内分别在预定的硬度范围和预定的薄膜应力范围内分布,并且对于退火温度分别几乎是恒定的,薄的 通过使用具有选自Ag,Cu,Mg和Zn中的一种或多种的0.5〜15原子%的组成的溅射靶和0.01〜5原子%的溅射靶的溅射法,在基板上形成膜铝合金 选自Co,Cr,Gd,Hf,Li,Mn,Mo,Nb,Nd,Ni,Pd,Pt,Ru,Sc,Sr,Ta,Ti,W,Y和Zr中的至少一种, Al和不可避免的杂质。