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11. 发明申请

US20110002351A1 SEMICONDUCTOR LASER DEVICE 审中-公开
标题翻译：半导体激光器件
公开(公告)号：US20110002351A1
公开(公告)日：2011-01-06
申请号：US12616816
申请日：2009-11-12
申请人： Kimio Shigihara
发明人： Kimio Shigihara
IPC分类号： H01S5/00
CPC分类号： H01S5/2004 , H01S5/2063 , H01S5/22 , H01S5/3211
摘要： A semiconductor laser device includes: a p-type cladding layer; a p-type cladding layer guide layer; an active layer; an n-type cladding layer guide layer; and an n-type cladding layer, in which each of the p-type and n-type cladding layer guide layers is undoped or close to undoped, the sum of the thickness of the p-type cladding layer guide layer and the thickness of the n-type cladding layer guide layer is at least 200 nm, and both of (i) the difference between the band gap energy of the p-type cladding layer guide layer and the band gap energy of the active layer, and (ii) the difference between the band gap energy of the n-type cladding layer guide layer and the band gap energy of the active layer do not exceed 0.3 eV.
摘要翻译：半导体激光器件包括：p型覆层; p型包覆层引导层; 活性层 n型包覆层引导层; 以及n型包覆层，其中p型和n型包覆层导向层中的每一个未掺杂或接近未掺杂，p型包覆层引导层的厚度和 n型包覆层引导层为至少200nm，（i）p型包覆层导向层的带隙能量与有源层的带隙能量之间的差异，以及（ii） n型包层导向层的带隙能量与有源层的带隙能量之间的差不超过0.3eV。

12. 发明授权

US07724794B2 Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US07724794B2
公开(公告)日：2010-05-25
申请号：US12191344
申请日：2008-08-14
申请人： Kimio Shigihara
发明人： Kimio Shigihara
IPC分类号： H01S5/00
CPC分类号： H01S5/20 , B82Y20/00 , H01S5/2004 , H01S5/3211 , H01S5/34313
摘要： A semiconductor laser device includes an active layer, a pair of guiding layers sandwiching the active layer, and a pair of cladding layers sandwiching the active layer and the pair of guiding layers. The pair of guiding layers are InGaAsP lattice-matched to GaAs. The pair of cladding layers are AlGaAs. The Al composition ratios of the pair of AlGaAs cladding layers are 0.4 or less. The Al composition ratios are set such that the refractive indices of the pair of AlGaAs cladding layers do not exceed those of the pair of InGaAsP guiding layers.
摘要翻译：半导体激光器件包括有源层，夹持有源层的一对引导层，以及夹持有源层和一对引导层的一对覆盖层。这对引导层是与GaAs晶格匹配的InGaAsP。这对包覆层是AlGaAs。一对AlGaAs覆层的Al组成比为0.4以下。 Al组成比被设定为使得一对AlGaAs包层的折射率不超过一对InGaAsP导向层的折射率。

13. 发明申请

US20100118904A1 SEMICONDUCTOR LASER DEVICE 有权
标题翻译：半导体激光器件
公开(公告)号：US20100118904A1
公开(公告)日：2010-05-13
申请号：US12407822
申请日：2009-03-20
申请人： Kimio Shigihara
发明人： Kimio Shigihara
IPC分类号： H01S5/00
CPC分类号： H01S5/20 , B82Y20/00 , H01S5/1053 , H01S5/2004 , H01S5/343 , H01S5/3436 , H01S2301/18
摘要： A semiconductor laser device includes: an n-type cladding layer; a p-type cladding layer; and an optical waveguide portion disposed between the n-type and p-type cladding layers and including spaced-apart active layers. The optical waveguide portion permits lasing in a crystal growth direction of the active layers in at least three modes, including the fundamental mode and two higher order modes. The number of active layers is equal to or greater than the number of extreme points of the electric field of a particular one of the higher order modes. At least one of the active layers is disposed near extreme point of the electric field of the particular higher order mode, within the optical waveguide portion.
摘要翻译：半导体激光装置包括：n型包层; p型覆层; 以及设置在n型和p型包覆层之间并且包括间隔开的有源层的光波导部分。光波导部分允许至少三种模式在有源层的晶体生长方向上发光，包括基模和两高阶模。有源层的数量等于或大于特定一个较高阶模式的电场的极值点的数量。在光波导部分内，有源层中的至少一个设置在特定高阶模式的电场的极点附近。

14. 发明申请

US20090237798A1 SEMICONDUCTOR PHOTONIC DEVICE 失效
公开(公告)号：US20090237798A1
公开(公告)日：2009-09-24
申请号：US12475688
申请日：2009-06-01
申请人： Kimio Shigihara
发明人： Kimio Shigihara
IPC分类号： G02B1/10
CPC分类号： H01S5/028 , G02B1/115 , H01L33/44 , H01S5/0287
摘要： A coating film is provided on an end surface of a semiconductor photonic element including an active layer through which light propagates. The coating film has a two-layer structure including a first layer film and a second layer film arranged in a stacked relation. The thicknesses of the first and second layer films are determined so that the value of the amplitude reflectivity of the coating film is equal to an imaginary number.
摘要翻译：在包括光传播的有源层的半导体光子元件的端面上设置涂膜。涂膜具有包括以层叠的关系布置的第一层膜和第二层膜的双层结构。确定第一层和第二层膜的厚度，使得涂膜的振幅反射率的值等于虚数。

15. 发明授权

US07428256B2 Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US07428256B2
公开(公告)日：2008-09-23
申请号：US11740320
申请日：2007-04-26
申请人： Kimio Shigihara
发明人： Kimio Shigihara
IPC分类号： H01S5/00
CPC分类号： H01S5/20 , B82Y20/00 , H01S5/2004 , H01S5/3211 , H01S5/34313
摘要： A semiconductor laser device includes an active layer, a pair of guiding layers sandwiching the active layer, and a pair of cladding layers sandwiching the active layer and the pair of guiding layers. The pair of guiding layers are InGaAsP lattice-matched to GaAs. The pair of cladding layers are AlGaAs. The Al composition ratios of the pair of AlGaAs cladding layers are 0.4 or less. The Al composition ratios are set such that the refractive indices of the pair of AlGas cladding layers do not exceed those of the pair of InGaAsP guiding layers.
摘要翻译：半导体激光器件包括有源层，夹持有源层的一对引导层，以及夹持有源层和一对引导层的一对覆盖层。这对引导层是与GaAs晶格匹配的InGaAsP。这对包覆层是AlGaAs。一对AlGaAs覆层的Al组成比为0.4以下。 Al组成比被设定为使得一对AlGas包层的折射率不超过一对InGaAsP导向层的折射率。

16. 发明授权

US07129512B2 Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US07129512B2
公开(公告)日：2006-10-31
申请号：US10961233
申请日：2004-10-12
申请人： Kimio Shigihara
发明人： Kimio Shigihara
IPC分类号： H01L29/06
CPC分类号： H01S5/02461 , H01S5/0224 , H01S5/20 , H01S5/2004 , H01S5/2036 , H01S5/2063 , H01S5/2231 , H01S5/3213 , H01S2301/18
摘要： The present invention provides a semiconductor laser device including a heat sink having one main surface, an n-AlGaAs cladding layer disposed on the main surface of the heat sink, an AlGaAs active layer disposed on the n-AlGaAs cladding layer and a p-AlGaAs cladding layer disposed on the AlGaAs active layer. An effective refractive index and a thermal resistance between a main surface on the heat sink side, of the AlGaAs active layer and a main surface on the heat sink side, of the n-AlGaAs cladding layer are respectively set smaller than those between a main surface on the side opposite to the heat sink, of the AlGaAs active layer and a main surface on the side opposite to the heat sink, of the p-AlGaAs cladding layer.
摘要翻译：本发明提供一种半导体激光装置，其具备：具有一个主表面的散热器，设置在散热片主表面上的n-AlGaAs覆层，设置在n-AlGaAs覆层上的AlGaAs有源层和p-AlGaAs 包层设置在AlGaAs活性层上。 n AlGaAs覆层的AlGaAs活性层和散热体侧的主表面的散热器侧的主面之间的有效折射率和热电阻分别设定为小于主面在AlGaAs活性层的相反一侧和与散热器相反的一侧的主表面上的p-AlGaAs覆层。

17. 发明申请

US20060220037A1 Semiconductor optical element 失效
标题翻译：半导体光学元件
公开(公告)号：US20060220037A1
公开(公告)日：2006-10-05
申请号：US11263997
申请日：2005-11-02
申请人： Yoshihiko Hanamaki , Kenichi Ono , Kimio Shigihara , Kazushige Kawasaki , Kimitaka Shibata , Naoyuki Shimada
发明人： Yoshihiko Hanamaki , Kenichi Ono , Kimio Shigihara , Kazushige Kawasaki , Kimitaka Shibata , Naoyuki Shimada
IPC分类号： H01L31/12
CPC分类号： H01S5/22 , H01S5/323
摘要： A semiconductor optical element having a includes an n-type GaAs buffer layer, an n-type AlGaInP cladding layer, a first InGaAsP (including zero As content) guide layer without added dopant impurities, an InGaAsP (including zero In content) active layer, a second InGaAsP (including zero As content) guide layer without added dopant impurities, a p-type AlGaInP cladding layer, a p-type band discontinuity reduction layer, and a p-type GaAs contact layer sequentially laminated on an n-type GaAs substrate C or Mg is the dopant impurity in the p-type-GaAs contact layer, the p-type band discontinuity reduction layer, and the p-type AlGaInP cladding layer.
摘要翻译：具有包括n型GaAs缓冲层，n型AlGaInP包层，没有添加掺杂杂质的第一InGaAsP（包括零As含量）引导层的半导体光学元件，InGaAsP（包括0 In含量）有源层，没有添加掺杂剂杂质的第二InGaAsP（包括零As含量）引导层，顺序地层叠在n型GaAs衬底上的p型AlGaInP包层，p型带不连续性还原层和p型GaAs接触层 C或Mg是p型GaAs接触层中的掺杂剂杂质，p型带不连续性还原层和p型AlGaInP包层。

18. 发明授权

US06970633B2 Semiconductor optical device 失效
标题翻译：半导体光学器件
公开(公告)号：US06970633B2
公开(公告)日：2005-11-29
申请号：US10668185
申请日：2003-09-24
申请人： Kimio Shigihara , Kazushige Kawasaki
发明人： Kimio Shigihara , Kazushige Kawasaki
IPC分类号： H01S3/08 , G02B5/08 , G02B6/42 , H01S5/028 , H01S5/183 , G02B6/10 , H01L29/04 , H01L29/205 , H01S5/00 , B22B7/02
CPC分类号： H01S5/0287 , G02B5/0816 , G02B6/4207 , Y10T428/2495
摘要： A semiconductor optical device includes a waveguide layer and a reflecting multi-layer film. The waveguide layer includes two cladding layers and an active layer sandwiched between the two cladding layers. The reflecting multi-layer film including multiple layers is on at least one of a pair of opposing end faces of the waveguide layer. A summation Σnidi of products nidi of refractive indexes ni and thicknesses di of the layers denoted i in the reflecting multi-layer film, and a wavelength λ0 of light guided through the waveguide layer satisfies a relationship, Σnidi>λ0/4. A first wavelength bandwidth Δλ is wider than a second wavelength bandwidth ΔΛ. Δλ is a wavelength range including the wavelength λ0 in which a reflectance R of the reflecting multi-layer film is not higher than +2.0% from reflectance R at the wavelength λ0. ΔΛ is a wavelength range including the wavelength λ0 in which a reflectance R′ of a hypothetical layer is not higher than +2.0% from a hypothetical reflectance R′ at the wavelength λ0 of a hypothetical layer having a thickness of 5λ0/(4nf), a refractive index nf, on the at least one of opposing end faces, and satisfying a relationship, R′=((nc−nf2)/(nc+nf2))2, where nc denotes an effective refractive index of the waveguide layer.
摘要翻译：半导体光学器件包括波导层和反射多层膜。波导层包括两个包覆层和夹在两个覆层之间的有源层。包括多层的反射多层膜在波导层的一对相对的端面中的至少一个上。折射率n i i i i i i i的乘积的总和i i / 并且在反射多层膜中表示为i的层的厚度d 1和厚度d 1，并且通过波导层引导的光的波长λ0 <0>满足关系，Sigman 4/1/2。第一波长带宽Deltalambda比第二波长带宽DeltaLambda宽。 Deltalλ是包括波长λ<0>的波长范围，其中反射多层膜的反射率R不比波长λ<0的反射率R + + 2.0％ >。 DeltaLambda是包括波长λ<0> 0的波长范围，其中假设层的反射率R'与波长λ0的假想反射率R'不高于+ 2.0％具有厚度为5μm/（4n×f））的假想层的折射率n _{在该至少一个的相对端面，并且满足关系，R'=（（n> c n）其中，n C表示有效折射率，其中n≥2 波导层。}

19. 发明授权

US5247203A Semiconductor device mounted on a heat sink with an intervening amorphous semiconductor material 失效
标题翻译：在具有干扰的非晶半导体材料的散热器上安装的半导体器件
公开(公告)号：US5247203A
公开(公告)日：1993-09-21
申请号：US649062
申请日：1991-02-01
申请人： Kimio Shigihara , Yutaka Nagai , Toshitaka Aoyagi
发明人： Kimio Shigihara , Yutaka Nagai , Toshitaka Aoyagi
IPC分类号： H01L23/14 , H01L21/28 , H01L21/48 , H01L21/52 , H01L23/36 , H01L23/373 , H01L29/43 , H01S5/00 , H01S5/02 , H01S5/022 , H01S5/042
CPC分类号： H01L23/3738 , H01L21/4882 , H01L2224/45144 , H01L2224/48463 , H01L2224/73265 , H01S5/0021 , H01S5/02272 , H01S5/02484 , H01S5/0425
摘要： A semiconductor device having a semiconductor element and a heat sink radiating heat generated by the semiconductor element includes an amorphous semiconductor film disposed on the heat sink and the semiconductor element disposed on the amorphous semiconductor film. Therefore, the stress applied to the semiconductor element is reduced because of the amorphous semiconductor film. In one structure, an amorphous semiconductor film comprising amorphous silicon or amorphous germanium is sandwiched between first and second metal films and the semiconductor element is bonded to the second metal film. An ohmic contact is made by alloys formed between the amorphous semiconductor film and the first and second metal films.

20. 发明授权

US5161164A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US5161164A
公开(公告)日：1992-11-03
申请号：US693318
申请日：1991-04-29
申请人： Kimio Shigihara , Yutaka Nagai , Toshitaka Aoyagi
发明人： Kimio Shigihara , Yutaka Nagai , Toshitaka Aoyagi
IPC分类号： H01S5/00 , H01S3/105 , H01S3/107 , H01S5/028 , H01S5/062 , H01S5/14 , H01S5/34
CPC分类号： B82Y20/00 , H01S3/105 , H01S3/107 , H01S5/14 , H01S5/34 , H01S5/028 , H01S5/0285 , H01S5/0622 , H01S5/3418
摘要： A semiconductor laser device includes a semiconductor laser element having a quantum well structure active layer having n levels of quantum states (n

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