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    • 13. 发明申请
    • INFRARED COMMUNICATIONS RECEIVER
    • 红外通信接收器
    • US20100119233A1
    • 2010-05-13
    • US12452756
    • 2008-06-04
    • Keiji Hayashi
    • Keiji Hayashi
    • H04B10/00
    • G08C23/04H04B10/1141H04B10/116
    • An objective of one embodiment of the present invention is to perform infrared communications without error by reducing abrupt noise included in a data signal when a light source of a display device is driven by PWM drive. When a control portion is provided with a drive setting signal for determining whether to drive lamps of a liquid crystal television by pulse width modulation drive or by continuous drive, the control portion sets a threshold in a register for a frequency filter portion based on the provided drive setting signal. Furthermore, upon reception of infrared light from the lamps, the threshold being set is reviewed based on an occurrence frequency for abrupt noise provided by a waveform analysis portion. Thereafter, abrupt noise included in a data signal transmitted from a cell phone is reduced by the frequency filter portion, and then the data signal is transmitted to the liquid crystal television.
    • 本发明的一个实施例的目的是当通过PWM驱动来驱动显示装置的光源时,通过减少包括在数据信号中的突发噪声来执行红外通信而无错误。 当控制部分设置有用于通过脉宽调制驱动或通过连续驱动来确定是否驱动液晶电视的灯的驱动设置信号时,控制部分基于所提供的频率滤波器部分设置用于频率滤波器部分的寄存器中的阈值 驱动设置信号。 此外,在接收到来自灯的红外光时,基于由波形分析部提供的突发噪声的发生频率来检查设定的阈值。 此后,通过频率滤波器部分减少包括在从手机发送的数据信号中的突发噪声,然后将数据信号发送到液晶电视。
    • 14. 发明申请
    • COLD CATHODE TUBE LAMP
    • 冷藏管灯
    • US20100109544A1
    • 2010-05-06
    • US12513295
    • 2007-07-27
    • Keiji Hayashi
    • Keiji Hayashi
    • H05B41/24
    • H01J61/54
    • A cold cathode tube lamp which can be lighted easily when the ambient temperature is low. The cold cathode tube lamp comprises discharge tubes (1, 40) having a pair of electrodes (12, 13, 42, 43) and being driven when a voltage having an AC component is supplied thereto, and ballast capacitors (2, 3, 50, 60) connected with at least one of the pair of electrodes. The ballast capacitor is arranged to come into thermal contact with the discharge tube and to increase the capacitance as the surface temperature of the ballast capacitor decreases.
    • 冷阴极管灯,当环境温度低时,可以轻松点亮。 冷阴极管灯包括具有一对电极(12,13,42,43)的放电管(1,40),并且当提供具有AC分量的电压时被驱动,以及镇流电容器(2,3,50 ,60)与所述一对电极中的至少一个连接。 镇流电容器布置成与放电管热接触,并且随着镇流电容器的表面温度降低而增加电容。
    • 19. 发明授权
    • Process for fabricating semiconductor device and photolithography mask
    • 制造半导体器件和光刻掩模的工艺
    • US06440802B1
    • 2002-08-27
    • US09940060
    • 2001-08-28
    • Keiji HayashiMasayuki Nagata
    • Keiji HayashiMasayuki Nagata
    • H01L218238
    • H01L21/2652H01L21/823412H01L21/823418H01L21/823481
    • A process for fabricating a semiconductor device including MOS transistors of low breakdown voltage type and of high breakdown voltage type provided on a semiconductor substrate, the MOS transistor of high breakdown voltage type being operative at a higher voltage than the MOS transistor of low breakdown voltage type and having drift diffusion regions, the process comprises the steps of: forming a LOCOS oxide film on the semiconductor substrate; and performing ion implantation with the use of a single mask having openings respectively defining on the substrate a first region for formation of a first conductivity type MOS transistor of low breakdown voltage type, a second region in which the LOCOS oxide film is formed for isolation of a first conductivity type MOS transistor of high breakdown voltage type, and a third region for formation of a drift diffusion region of a second conductivity type MOS transistor of high breakdown voltage type, so that the first and third regions each have at least two concentration peaks of implanted ions at different depths in the semiconductor substrate, and the second region has a concentration peak of implanted ions in the vicinity of an interface between the LOCOS oxide film and the semiconductor substrate.
    • 一种制造半导体器件的方法,该半导体器件包括设置在半导体衬底上的具有低击穿电压型和高击穿电压型的MOS晶体管,高耐电压型MOS晶体管在比低击穿电压型MOS晶体管更高的电压下工作 并具有漂移扩散区域,该方法包括以下步骤:在半导体衬底上形成LOCOS氧化物膜; 以及使用具有分别限定在所述衬底上的开口的单个掩模进行离子注入,所述第一区域用于形成低击穿电压型的第一导电型MOS晶体管的第一区域,其中形成所述LOCOS氧化物膜以隔离 高击穿电压型的第一导电型MOS晶体管和用于形成高击穿电压型的第二导电型MOS晶体管的漂移扩散区域的第三区域,使得第一和第三区域各自具有至少两个浓度峰 的注入离子在半导体衬底中的不同深度处,并且第二区域具有在LOCOS氧化物膜和半导体衬底之间的界面附近的注入离子的浓度峰值。