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11. 发明授权

US06917548B2 Self-repairing built-in self test for linked list memories 失效
标题翻译：自我修复内置自检用于链表记忆
公开(公告)号：US06917548B2
公开(公告)日：2005-07-12
申请号：US10894126
申请日：2004-07-20
申请人： Hyung Won Kim , Chuen-Shen Shung
发明人： Hyung Won Kim , Chuen-Shen Shung
IPC分类号： G11C29/00 , G12C7/00
CPC分类号： G11C29/76
摘要： A process of repairing defects in linked list memories including selecting one of a group of the linked list memories and an additional memory, as a defect marking memory, detecting faults in rows of the defect marking memory, and storing row addresses having at least one fault in defect address registers. The method detects faults in rows of other linked list memories, where the other linked list memories are the linked list memories other than the defect marking memory, and stores a marking code for each row address of the other linked list memories in the defect marking memory. The defect address registers and the defect marking memory are searched when addresses of the linked list memories are linked and row addresses having a specific marking code skipped in the linking process.
摘要翻译：修复链表的存储器中的缺陷的处理，包括选择链表列表存储器和附加存储器中的一个作为缺陷标记存储器，检测缺陷标记存储器的行中的故障，以及存储具有至少一个故障的行地址在缺陷地址寄存器中。该方法检测其他链表的存储器的行中的故障，其中，链表列表存储器是除了缺陷标记存储器之外的链表列表存储器，并将其他链表列表存储器的每一行地址的标记代码存储在缺陷标记存储器中。在链接列表存储器的地址被链接时，搜索缺陷地址寄存器和缺陷标记存储器，并且在链接处理中跳过具有特定标记代码的行地址。

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