会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 16. 发明授权
    • Simulation device, simulation system, method of simulation and program
    • 仿真设备,仿真系统,仿真和程序的方法
    • US09189572B2
    • 2015-11-17
    • US13638757
    • 2011-03-07
    • Akira MiyamotoMichihisa KoyamaKazuki Nakamura
    • Akira MiyamotoMichihisa KoyamaKazuki Nakamura
    • G06G7/50G06F17/50G01N15/08
    • G06F17/5009G01N15/0886
    • A simulation system (101) includes an X-ray CT device (11) that obtains a tomographic image of a porous sample, and a simulation device (14) that simulates a mercury intrusion method by processing a laminated tomographic image of the sample. The simulation device (14) includes a modeling means which processes the laminated tomographic image of the sample, and which models an internal structure of the sample, a minimum-diameter obtaining means that obtains a minimum entrance diameter when mercury enters in a pore of the sample at a predetermined pressure based on a surface energy of the sample and a pressure, and a means that simulates a liquid entering in the interior of the pore from one surface of the sample based on a diameter of the pore of the modeled sample and the minimum entrance diameter.
    • 模拟系统(101)包括获得多孔样品的断层图像的X射线CT装置(11),以及通过处理样品的层叠断层图像来模拟水银侵入方法的模拟装置(14)。 模拟装置(14)包括:模拟装置,其处理样品的层叠断层图像,并对样品的内部结构进行建模;最小直径获取装置,当汞进入到所述样品的孔中时获得最小入口直径 基于样品的表面能和压力的预定压力的样品,以及基于样品的孔的直径来模拟从样品的一个表面进入孔的内部的液体的装置,以及 最小入口直径
    • 20. 发明授权
    • Semiconductor device having SEPP connected NPN and PNP transistors
    • 具有SEPP的半导体器件连接NPN和PNP晶体管
    • US6054898A
    • 2000-04-25
    • US859710
    • 1997-05-21
    • Tatsuhiko OkumaAkira MiyamotoHachiro Sato
    • Tatsuhiko OkumaAkira MiyamotoHachiro Sato
    • H03F3/30H03F3/26
    • H03F3/3077
    • A semiconductor device capable of maintaining good temperature compensation and reducing manufacture costs of SEPP connecting NPN and PNP power transistors and temperature compensating and biasing circuits. A first semiconductor device has an ordinary bias diode formed on the same semiconductor substrate as an NPN power transistor. A second semiconductor device has one or a plurality of Schottky barrier type diodes formed on the same semiconductor substrate as a PNP power transistor. The forward voltage drop V.sub.1 of the diode is set to an arbitrary constant value smaller than E exclusive of about E/2, and the total forward voltage drop V.sub.2 of the Schottky barrier diode or diodes is set to a predetermined value of about (E-V.sub.1), where E is a total forward voltage drop between the bases and emitters of the NPN and PNP power transistors.
    • 能够保持良好的温度补偿并降低SEPP连接NPN和PNP功率晶体管以及温度补偿和偏置电路的制造成本的半导体器件。 第一半导体器件具有形成在与NPN功率晶体管相同的半导体衬底上的普通偏置二极管。 第二半导体器件具有形成在与PNP功率晶体管相同的半导体衬底上的一个或多个肖特基势垒型二极管。 将二极管的正向压降V1设定为小于除E / 2以外的E的任意常数值,将肖特基势垒二极管或二极管的正向压降V2设定为约(E- V1),其中E是NPN和PNP功率晶体管的基极和发射极之间的总正向压降。