专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明授权

US08723320B2 Power module and manufacturing method thereof 有权
标题翻译：电源模块及其制造方法
公开(公告)号：US08723320B2
公开(公告)日：2014-05-13
申请号：US13537116
申请日：2012-06-29
申请人： Isamu Yoshida , Michiaki Hiyoshi , Takehide Yokozuka , Akihiro Muramoto
发明人： Isamu Yoshida , Michiaki Hiyoshi , Takehide Yokozuka , Akihiro Muramoto
IPC分类号： H01L23/48
CPC分类号： H01L23/49811 , H01L23/3735 , H01L25/072 , H01L2924/0002 , H01L2924/01327 , H01L2924/00
摘要： A power module includes a substrate having a surface on which a plurality of wiring patterns are formed, a semiconductor device mounted on the substrate and electrically connected to a part of the plurality of wiring patterns, and a terminal portion with a lead electrically connected to the other part of the plurality of wiring patterns, and is configured that the lead of the terminal portion is formed by laminating a plurality of metal members which contain a material substantially the same as or softer than the material for forming the other part of wiring patterns, and the material of the plurality of metal members, which is the same as or softer than the material for forming the other part of wiring patterns is electrically connected to the other part of wiring patterns through ultrasonic bonding.
摘要翻译：电源模块包括具有其上形成有多个布线图案的表面的基板，安装在基板上并与多个布线图形的一部分电连接的半导体器件，以及端子部分，其引线电连接到多个布线图案的其他部分，并且被构造成通过层叠多个金属构件来形成端子部分的引线，所述多个金属构件包含与用于形成布线图案的其他部分的材料基本相同或者更软的材料，并且与用于形成布线图形的另一部分的材料相同或更软的多个金属构件的材料通过超声波接合电连接到布线图案的另一部分。

12. 发明申请

US20100208427A1 SEMICONDUCTOR POWER MODULE, INVERTER, AND METHOD OF MANUFACTURING A POWER MODULE 有权
标题翻译：半导体功率模块，逆变器和制造功率模块的方法
公开(公告)号：US20100208427A1
公开(公告)日：2010-08-19
申请号：US12707207
申请日：2010-02-17
申请人： Keisuke Horiuchi , Atsuo Nishihara , Hiroshi Hozoji , Michiaki Hiyoshi , Takehide Yokozuka
发明人： Keisuke Horiuchi , Atsuo Nishihara , Hiroshi Hozoji , Michiaki Hiyoshi , Takehide Yokozuka
IPC分类号： H05K7/20 , H01L21/00
CPC分类号： H05K7/20927 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor power module includes an insulated substrate mounting with a plurality of power semiconductor devices and a heat sink for radiating a heat generated from the plurality of power semiconductor devices, wherein the heat sink is integrally molded with a plurality of radiation fins on one surface of a planate base by forging work such that a metallic material filled into a female die of a predetermined shape is pressed by a male die of a predetermined shape, and the heat sink and the insulated substrate are bonded in metallic bonding with another surface opposite of one surface on which the radiation fins are formed with the base of the heat sink.
摘要翻译：半导体功率模块包括安装有多个功率半导体器件的绝缘衬底和用于辐射由多个功率半导体器件产生的热量的散热器，其中散热器与多个功率半导体器件的一个表面上的多个辐射翅片一体地模制通过锻造工件的平面基座，使得填充到预定形状的阴模中的金属材料被预定形状的阳模挤压，并且散热器和绝缘基板以与一个相反的另一表面的金属接合辐射翅片与散热片的底部形成的表面。

13. 发明授权

US06756667B2 Hermetically sealed semiconductor power module and large scale module comprising the same 失效
标题翻译：密封的半导体功率模块和包括其的大型模块
公开(公告)号：US06756667B2
公开(公告)日：2004-06-29
申请号：US09917876
申请日：2001-07-31
申请人： Michiaki Hiyoshi
发明人： Michiaki Hiyoshi
IPC分类号： H01L2315
CPC分类号： H01L25/072 , H01L2224/45124 , H01L2224/48091 , H01L2224/48095 , H01L2224/48227 , H01L2224/48464 , H01L2224/49111 , H01L2224/73265 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/181 , H01L2924/3025 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： This is a semiconductor power module provided with: a ceramic substrate; a metallic plate bonded to a surface of this substrate; a cylindrical metallic flange which is hermetically bonded to a surface of substrate or the metallic plate; a ceramic housing for hermetically sealing an opening of the metallic flange; and at least one or more semiconductor chips soldered to the metallic plate. The metallic flange is made of metal with a low thermal expansion coefficient. A hermetically sealed container is created by welding the metallic flange, the ceramic substrate and the housing with silver brazing. Moreover, external collector, emitter and gate electrodes are bonded on the housing by using the silver brazing. The collector, emitter and gate conductive pillars are respectively connected to the external collector, emitter and gate electrodes with calking. Thus, this hermetically sealed container is strong in mechanical strength and high in explosion-proof durability and excellent in moisture resistance. And this semiconductor power module has a high TFT reliability and a high TCT reliability. Moreover, a power cycle durability is larger since the emitter pedals are pressure-contacted to the emitter electrode pads disposed on the semiconductor chip via the metallic hemispheres so as to implement a large conductive capacity.
摘要翻译：这是一种半导体功率模块，具有：陶瓷基板; 金属板结合到该基板的表面上; 圆柱形的金属法兰，气密地粘合到基片或金属板的表面上; 陶瓷壳体，用于密封金属法兰的开口; 以及焊接到金属板的至少一个或多个半导体芯片。金属法兰由热膨胀系数低的金属制成。通过用金属钎焊焊接金属法兰，陶瓷基板和外壳来形成气密密封的容器。此外，通过使用银钎焊将外部集电极，发射极和栅电极接合在壳体上。集电极，发射极和栅极导电柱分别与外部集电极，发射极和栅电极连接。因此，该密闭容器的机械强度强，防爆耐久性高，耐湿性优异。该半导体功率模块具有较高的TFT可靠性和较高的TCT可靠性。此外，由于发射踏板通过金属半球与设置在半导体芯片上的发射极电极焊盘压力接触以实现大的导电能力，所以功率循环耐久性更大。

14. 发明授权

US5874750A Pressure-contact type semiconductor device 失效
标题翻译：压接型半导体器件
公开(公告)号：US5874750A
公开(公告)日：1999-02-23
申请号：US743812
申请日：1996-11-06
申请人： Satoshi Yanagisawa , Michiaki Hiyoshi
发明人： Satoshi Yanagisawa , Michiaki Hiyoshi
IPC分类号： H01L29/74 , H01L23/051 , H01L23/48 , H01L29/739 , H01L29/78 , H01L31/111
CPC分类号： H01L24/72 , H01L23/051 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01082 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/30107
摘要： A pressure-contact type semiconductor device such as an insulated gate bipolar transistor. The device includes semiconductor chip, a gate electrode on a first surface of the semiconductor chip, an emitter electrode insulated and separated from the gate electrode, and an emitter sensing electrode on the first surface of the semiconductor chip. A collector layer is on the second surface of the semiconductor chip. The emitter sensing electrode monitors the emitter voltage. Because the emitter sensing electrode is on the semiconductor chip, the emitter sensing electrode is not influenced by inductance between an emitter and an emitter terminal.
摘要翻译：诸如绝缘栅双极晶体管的压接型半导体器件。该器件包括半导体芯片，在半导体芯片的第一表面上的栅电极，与栅电极绝缘和分离的发射极，以及半导体芯片的第一表面上的发射极感测电极。集电极层位于半导体芯片的第二表面上。发射极检测电极监测发射极电压。因为发射极感测电极在半导体芯片上，所以发射极检测电极不受发射极和发射极端子之间的电感的影响。

15. 发明授权

US06967357B1 Voltage-driven power semiconductor device 失效
标题翻译：电压驱动功率半导体器件
公开(公告)号：US06967357B1
公开(公告)日：2005-11-22
申请号：US09684904
申请日：2000-10-10
申请人： Hironobu Kon , Yoshinori Iwano , Mitsuhiko Kitagawa , Shigeru Hasegawa , Michiaki Hiyoshi
发明人： Hironobu Kon , Yoshinori Iwano , Mitsuhiko Kitagawa , Shigeru Hasegawa , Michiaki Hiyoshi
IPC分类号： H01L29/78 , H01L23/48 , H01L27/04 , H01L29/739 , H03K17/16 , H01L29/74 , H01L31/111
CPC分类号： H01L24/72 , H01L29/7397 , H01L2224/45124 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01074 , H01L2924/12035 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/19042 , H01L2924/19043 , H01L2924/30105 , H01L2924/30107 , H03K17/168 , H01L2924/00 , H01L2224/48
摘要： A voltage-driven power semiconductor device includes a voltage-driven IEGT chip, a collector electrode plate, an emitter electrode plate, and an inductance material. The collector electrode plate is connected to the collector of the IEGT chip, and press-contacts the IEGT chip from its collector side. The emitter electrode plate press-contacts the IEGT chip from its emitter side. The inductance material has an inductance component and connects the emitter of the IEGT chip and the emitter electrode plate. In the voltage-driven power semiconductor device having this arrangement, an induced electromotive force is generated in the inductance material arranged between the emitter of the IEGT chip and the emitter electrode plate. This induced electromotive force can suppress a steep current change (di/dt) upon an OFF operation, and can further suppress a steep voltage change (dv/dt) caused by the current change (di/dt).
摘要翻译：电压驱动功率半导体器件包括电压驱动的IEGT芯片，集电极板，发射极电极板和电感材料。集电极板与IEGT芯片的集电极连接，并从集电极侧压接IEGT芯片。发射极电极板从发射极侧压接IEGT芯片。电感材料具有电感元件并连接IEGT芯片的发射极和发射极电极板。在具有这种结构的电压驱动功率半导体器件中，在配置在IEGT芯片的发射极和发射极电极板之间的电感材料中产生感应电动势。该感应电动势可以抑制在OFF操作时的陡峭电流变化（di / dt），并且可以进一步抑制由电流变化（di / dt）引起的陡峭的电压变化（dv / dt）。

16. 发明授权

US06770964B2 Semiconductor device including intermediate wiring element 失效
标题翻译：包括中间布线元件的半导体装置
公开(公告)号：US06770964B2
公开(公告)日：2004-08-03
申请号：US09953295
申请日：2001-09-17
申请人： Michiaki Hiyoshi
发明人： Michiaki Hiyoshi
IPC分类号： H01L2348
CPC分类号： H01L23/24 , H01L24/45 , H01L24/48 , H01L24/49 , H01L25/072 , H01L2224/45124 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/49111 , H01L2224/49113 , H01L2224/73221 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01023 , H01L2924/01029 , H01L2924/014 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/15787 , H01L2924/181 , H01L2924/19043 , H01L2924/19107 , H01L2924/30105 , H01L2924/30107 , H01L2924/351 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： An IGBT module comprises a ceramic substrate having a collector wiring element on a surface thereof, an IGBT chip provided on the collector wiring element, an insulative member provided on the collector wiring element and configured to cover at least edge portions of the IGBT chip, and an insulative sealing resin, provided on the ceramic substrate, for covering the IGBT chip and the insulative member. The sealing resin has lower insulation properties than the insulative member.
摘要翻译： IGBT模块包括其表面上具有集电极布线元件的陶瓷基板，设置在集电布线元件上的IGBT芯片，设置在集电布线元件上并被构造成覆盖IGBT芯片的至少边缘部分的绝缘部件，以及设置在陶瓷基板上的用于覆盖IGBT芯片和绝缘构件的绝缘密封树脂。密封树脂具有比绝缘构件低的绝缘性能。

17. 发明授权

US6147368A Voltage-driven power semiconductor device 失效
标题翻译：电压驱动功率半导体器件
公开(公告)号：US6147368A
公开(公告)日：2000-11-14
申请号：US115238
申请日：1998-07-14
申请人： Hironobu Kon , Yoshinoro Iwano , Mitsuhiko Kitagawa , Shigeru Hasegawa , Michiaki Hiyoshi
发明人： Hironobu Kon , Yoshinoro Iwano , Mitsuhiko Kitagawa , Shigeru Hasegawa , Michiaki Hiyoshi
IPC分类号： H01L29/78 , H01L23/48 , H01L27/04 , H01L29/739 , H03K17/16 , H01L29/74 , H01L31/111
CPC分类号： H01L24/72 , H01L29/7397 , H03K17/168 , H01L2224/45124 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01074 , H01L2924/12035 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/19042 , H01L2924/19043 , H01L2924/30105 , H01L2924/30107
摘要： A voltage-driven power semiconductor device includes a voltage-driven IEGT chip, a collector electrode plate, an emitter electrode plate, and an inductance material. The collector electrode plate is connected to the collector of the IEGT chip, and press-contacts the IEGT chip from its collector side. The emitter electrode plate press-contacts the IEGT chip from its emitter side. The inductance material has an inductance component and connects the emitter of the IEGT chip and the emitter electrode plate. In the voltage-driven power semiconductor device having this arrangement, an induced electromotive force is generated in the inductance material arranged between the emitter of the IEGT chip and the emitter electrode plate. This induced electromotive force can suppress a steep current change (di/dt) upon an OFF operation, and can further suppress a steep voltage change (dv/dt) caused by the current change (di/dt).
摘要翻译：电压驱动功率半导体器件包括电压驱动的IEGT芯片，集电极板，发射极电极板和电感材料。集电极板与IEGT芯片的集电极连接，并从集电极侧压接IEGT芯片。发射极电极板从发射极侧压接IEGT芯片。电感材料具有电感元件并连接IEGT芯片的发射极和发射极电极板。在具有这种结构的电压驱动功率半导体器件中，在配置在IEGT芯片的发射极和发射极电极板之间的电感材料中产生感应电动势。该感应电动势可以抑制在OFF操作时的陡峭电流变化（di / dt），并且可以进一步抑制由电流变化（di / dt）引起的陡峭的电压变化（dv / dt）。

18. 发明授权

US5866944A Multichip press-contact type semiconductor device 失效
标题翻译：多芯片压接式半导体器件
公开(公告)号：US5866944A
公开(公告)日：1999-02-02
申请号：US665980
申请日：1996-06-19
申请人： Michiaki Hiyoshi , Takashi Fujiwara , Hideo Matsuda
发明人： Michiaki Hiyoshi , Takashi Fujiwara , Hideo Matsuda
IPC分类号： H01L29/74 , H01L23/051 , H01L23/48 , H01L25/04 , H01L25/07 , H01L25/18 , H01L23/16
CPC分类号： H01L23/051 , H01L24/72 , H01L2924/01004 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01047 , H01L2924/01082 , H01L2924/1305 , H01L2924/13055
摘要： In the present invention, by virtue of heat buffer plates respectively located on the major surfaces of IGBT chips and FRD chips arranged in a single plane, the total thickness of each chip and a corresponding one of the heat can be set to a substantially predetermined value. A thickness-correcting member having elongated projections corresponding to the chips is provided on those surfaces of the heat buffer plates which is remote from the chips. A heat buffer disk plate is provided on those surfaces of the chips which are opposite to the major surfaces thereof. The thickness-correcting member, the heat buffer plates and the IGBT and FRD chips are held and simultaneously pressed between an emitter press-contact electrode plate and a collector press-contact electrode plate. Before using the device, a force of press, which is higher than that applied at the time of using the device and can plastically deform the thickness-correcting member, is applied to the emitter press-contact electrode plate and the collector press-contact electrode plate, thereby correcting variations in total thickness of each semiconductor chip and a corresponding one of the heat buffer plates.
摘要翻译：在本发明中，由于分别位于布置在单个平面中的IGBT芯片和FRD芯片的主表面上的热缓冲板，每个芯片的总厚度和相应的一个热量可以被设置为基本上预定的值。具有与芯片相对应的细长突起的厚度校正构件设置在远离芯片的热缓冲板的表面上。在与其主表面相对的芯片的这些表面上设置有缓冲盘片。厚度校正构件，热缓冲板和IGBT和FRD芯片被保持并同时按压在发射极压接电极板和集电体压接电极板之间。在使用该装置之前，将加压力高于在使用该装置时施加的压力并使厚度校正构件塑性变形的压力施加到发射体压接电极板和集电体压接电极从而校正每个半导体芯片和对应的一个热缓冲板的总厚度的变化。

19. 发明授权

US5835985A Reverse conducting gate-turnoff thyristor 失效
标题翻译：反向导通栅极截止晶闸管
公开(公告)号：US5835985A
公开(公告)日：1998-11-10
申请号：US305661
申请日：1994-09-14
申请人： Michiaki Hiyoshi , Takashi Fujiwara , Hideo Matsuda , Satoshi Yanagisawa , Susumu Iesaka , Tatuo Harada
发明人： Michiaki Hiyoshi , Takashi Fujiwara , Hideo Matsuda , Satoshi Yanagisawa , Susumu Iesaka , Tatuo Harada
IPC分类号： H01L29/74 , H01L31/111
CPC分类号： H01L29/7416
摘要： A reverse conducting gate-turnoff thyristor includes a switching device section, a diode section, and an isolating section located between the switching device section and the diode section. The isolating section includes an impurity layer formed by controlling impurity diffusion and having an impurity concentration lower than those of the switching device section and the diode section.
摘要翻译：反向导通栅极截止晶闸管包括开关器件部分，二极管部分和位于开关器件部分和二极管部分之间的隔离部分。隔离部分包括通过控制杂质扩散而形成的杂质层，其杂质浓度低于开关器件部分和二极管部分的杂质浓度。

20. 发明授权

US5360985A Press-contact type semiconductor device 失效
标题翻译：压接式半导体器件
公开(公告)号：US5360985A
公开(公告)日：1994-11-01
申请号：US70040
申请日：1993-06-01
申请人： Michiaki Hiyoshi , Takashi Fujiwara , Hisashi Suzuki , Hideo Matsuda
发明人： Michiaki Hiyoshi , Takashi Fujiwara , Hisashi Suzuki , Hideo Matsuda
IPC分类号： H01L29/74 , H01L21/52 , H01L23/051 , H01L23/48 , H01L23/02
CPC分类号： H01L24/72 , H01L23/051 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01088 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055
摘要： In a semiconductor device, a pellet electrode, which is formed on a mesa-shaped pellet, and an external electrode, with which a package is provided, are in pressure-contact with each other. A soft-metal plate which has projections along its surface is arranged between the external electrode and the pellet electrode.
摘要翻译：在半导体装置中，形成在台面状颗粒上的颗粒电极和设置有封装的外部电极彼此压力接触。在外部电极和颗粒电极之间布置有沿着其表面具有突起的软金属板。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式