专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明申请

US20070051937A1 Optical semiconductor devices on InP substrate 有权
标题翻译： InP衬底上的光学半导体器件
公开(公告)号：US20070051937A1
公开(公告)日：2007-03-08
申请号：US11500292
申请日：2006-08-08
申请人： Katsumi Kishino , Ichiro Nomura , Koshi Tamamura , Hitoshi Nakamura
发明人： Katsumi Kishino , Ichiro Nomura , Koshi Tamamura , Hitoshi Nakamura
IPC分类号： H01L29/06
CPC分类号： H01S5/347 , B82Y20/00 , H01L31/0296 , H01L31/035236 , H01L33/06 , H01L33/28 , H01S5/0218 , H01S2304/02
摘要： The present invention aims at providing a structure in which a high p-type carrier concentration of 1×1017 cm−3 or more is obtained in a material in which, although it shows normally p-type conductivity, a carrier concentration smaller than 1×1017 cm−3 is only obtained. Also, the present invention aims at providing highly reliable semiconductor element and device each of which has excellent characteristics such as light emitting characteristics and a long lifetime. Each specific layer, i.e., each ZnSe0.53Te0.47 layer (2ML) is inserted between host layers, i.e., Mg0.5Zn0.29Cd0.21Se layers (each having 10ML (atomic layer) thickness) each of which is lattice matched to an InP substrate. In this case, each specific layer in which a sufficient carrier concentration of 1×1018 cm−3 or more is obtained when a single layer is inserted at suitable intervals. As a result, a sufficient hole concentration of 1×1017 cm−3 or more is obtained in the overall crystal in a material in which a hole concentration smaller than 1×1017 cm−3 has been only conventionally obtained.
摘要翻译：本发明的目的在于提供一种结构，其中在其中显示出1×10 17 -3 -3以上的高p型载流子浓度的材料中获得通常是p型导电性，仅获得小于1×10 17 cm -3的载流子浓度。另外，本发明的目的在于提供高度可靠的半导体元件和器件，其各自具有优异的特性，例如发光特性和长寿命。每个特定层，即每个ZnSe 0.53 Te 0.47层（2ML）被插入到主体层之间，即Mg 0.5 Zn 2+ 每个都具有与InP衬底晶格匹配的Se层（每个具有10ML（原子层）厚度）。在这种情况下，当以适当的间隔插入单层时，获得其中足够的载流子浓度为1×10 18 cm -3以上的特定层。结果，在其中空穴浓度小于1×10 6Ω的材料中，在整个晶体中获得足够的空穴浓度为1×10 17 cm -3以上的空穴浓度。只有传统上获得了17厘米-3 -3。

12. 发明授权

US07772586B2 Optical semiconductor devices on InP substrate 有权
标题翻译： InP衬底上的光学半导体器件
公开(公告)号：US07772586B2
公开(公告)日：2010-08-10
申请号：US11500292
申请日：2006-08-08
申请人： Katsumi Kishino , Ichiro Nomura , Koshi Tamamura , Hitoshi Nakamura
发明人： Katsumi Kishino , Ichiro Nomura , Koshi Tamamura , Hitoshi Nakamura
IPC分类号： H01L33/00
CPC分类号： H01S5/347 , B82Y20/00 , H01L31/0296 , H01L31/035236 , H01L33/06 , H01L33/28 , H01S5/0218 , H01S2304/02
摘要： The present invention aims at providing a structure in which a high p-type carrier concentration of 1×1017 cm−3 or more is obtained in a material in which, although it shows normally p-type conductivity, a carrier concentration smaller than 1×1017 cm−3 is only obtained. Also, the present invention aims at providing highly reliable semiconductor element and device each of which has excellent characteristics such as light emitting characteristics and a long lifetime.Each specific layer, i.e., each ZnSe0.53Te0.47 layer (2 ML) is inserted between host layers, i.e., Mg0.5Zn0.29Cd0.21Se layers (each having 10 ML (atomic layer) thickness) each of which is lattice matched to an InP substrate. In this case, each specific layer in which a sufficient carrier concentration of 1×1018 cm−3 or more is obtained when a single layer is inserted at suitable intervals. As a result, a sufficient hole concentration of 1×1017 cm−3 or more is obtained in the overall crystal in a material in which a hole concentration smaller than 1×1017 cm−3 has been only conventionally obtained.
摘要翻译：本发明的目的在于提供一种结构，其中虽然其表现出正常的p型导电性，但载流子浓度小于1×10 7的材料，其中获得1×1017cm-3以上的高p型载流子浓度仅获得1017厘米-3。另外，本发明的目的在于提供高度可靠的半导体元件和器件，其各自具有优异的特性，例如发光特性和长寿命。每个特定层，即每个ZnSe0.53Te0.47层（2ML）被插入在主层之间，即Mg0.5Zn0.29Cd0.21Se层（每层具有10ML（原子层）厚度），每层具有格子匹配到InP衬底。在这种情况下，当以适当的间隔插入单层时，获得其中1×10 18 cm -3以上的载流子浓度足够的每个特定层。结果，在通常获得的空穴浓度小于1×1017cm-3的材料中，在整个晶体中获得足够的空穴浓度为1×10 17 cm -3以上。

13. 发明授权

US07045871B2 II-VI compound semiconductor crystal and photoelectric conversion device 有权
标题翻译： II-VI化合物半导体晶体和光电转换器件
公开(公告)号：US07045871B2
公开(公告)日：2006-05-16
申请号：US11115182
申请日：2005-04-27
申请人： Katsumi Kishino , Ichiro Nomura , Song-Bek Che , Kenji Sato
发明人： Katsumi Kishino , Ichiro Nomura , Song-Bek Che , Kenji Sato
IPC分类号： H01L31/272
CPC分类号： H01L33/28 , H01L31/0296
摘要： Since a ZnTe-base compound semiconductor crystal was designed so as to have, on a ZnTe-base compound semiconductor layer, an n-type contact layer which includes a superlattice layer having n-type CdSe and n-type ZnTe grown with each other or a ZnCdSeTe-graded layer, it was made possible to raise carrier concentration of the n-type contact layer, and to control the conductivity type in a relatively easy manner.Moreover, formation of a CdSe/ZnTe superlattice layer or a ZnCdSeTe-graded layer between the contact layer and an electrode can prevent electric resistance from being increased due to difference in the energy gaps. Since CdSe and ZnTe, composing the CdSe/ZnTe superlattice or ZnCdSeTe composition-graded layer, have relatively close lattice constants, formation thereof is less likely to adversely affect the crystallinity of the semiconductor crystal, which is advantageous in obtaining the semiconductor crystal with an excellent quality.
摘要翻译：由于ZnTe基化合物半导体晶体被设计成在ZnTe基化合物半导体层上具有n型接触层，该n型接触层包括彼此生长的具有n型CdSe和n型ZnTe的超晶格层，或者 ZnCdSeTe梯度层，可以提高n型接触层的载流子浓度，并以相对容易的方式控制导电类型。此外，在接触层和电极之间形成CdSe / ZnTe超晶格层或ZnCdSeTe梯度层可以防止由于能隙的差异而导致的电阻增加。由于构成CdSe / ZnTe超晶格或ZnCdSeTe组成梯度层的CdSe和ZnTe具有相对较近的晶格常数，所以其形成不太可能不利地影响半导体晶体的结晶度，这有利于获得具有优异的半导体晶体质量。

14. 发明申请

US20050189553A1 II-VI compound semiconductor crystal and photoelectric conversion device 有权
标题翻译： II-VI化合物半导体晶体和光电转换器件
公开(公告)号：US20050189553A1
公开(公告)日：2005-09-01
申请号：US11115182
申请日：2005-04-27
申请人： Katsumi Kishino , Ichiro Nomura , Song-Bek Che , Kenji Sato
发明人： Katsumi Kishino , Ichiro Nomura , Song-Bek Che , Kenji Sato
IPC分类号： H01L31/0296 , H01L33/06 , H01L33/28 , H01L33/40 , H01L29/22
CPC分类号： H01L33/28 , H01L31/0296
摘要： Since a ZnTe-base compound semiconductor crystal was designed so as to have, on a ZnTe-base compound semiconductor layer, an n-type contact layer which includes a superlattice layer having n-type CdSe and n-type ZnTe grown with each other or a ZnCdSeTe-graded layer, it was made possible to raise carrier concentration of the n-type contact layer, and to control the conductivity type in a relatively easy manner. Moreover, formation of a CdSe/ZnTe superlattice layer or a ZnCdSeTe-graded layer between the contact layer and an electrode can prevent electric resistance from being increased due to difference in the energy gaps. Since CdSe and ZnTe, composing the CdSe/ZnTe superlattice or ZnCdSeTe composition-graded layer, have relatively close lattice constants, formation thereof is less likely to adversely affect the crystallinity of the semiconductor crystal, which is advantageous in obtaining the semiconductor crystal with an excellent quality.
摘要翻译：由于ZnTe基化合物半导体晶体被设计成在ZnTe基化合物半导体层上具有n型接触层，该n型接触层包括彼此生长的具有n型CdSe和n型ZnTe的超晶格层，或者 ZnCdSeTe梯度层，可以提高n型接触层的载流子浓度，并以相对容易的方式控制导电类型。此外，在接触层和电极之间形成CdSe / ZnTe超晶格层或ZnCdSeTe梯度层可以防止由于能隙的差异而导致的电阻增加。由于构成CdSe / ZnTe超晶格或ZnCdSeTe组成梯度层的CdSe和ZnTe具有相对较近的晶格常数，所以其形成不太可能不利地影响半导体晶体的结晶度，这有利于获得具有优异的半导体晶体质量。

15. 发明授权

US06933519B2 II-VI compound semiconductor crystal 有权
标题翻译： II-VI化合物半导体晶体
公开(公告)号：US06933519B2
公开(公告)日：2005-08-23
申请号：US10381880
申请日：2002-08-02
申请人： Katsumi Kishino , Ichiro Nomura , Song-Bek Che , Kenji Sato
发明人： Katsumi Kishino , Ichiro Nomura , Song-Bek Che , Kenji Sato
IPC分类号： H01L31/0296 , H01L33/06 , H01L33/28 , H01L33/40 , H01L29/06
CPC分类号： H01L33/28 , H01L31/0296
摘要： The present invention relates to a II-VI compound semiconductor crystal comprising an n-type contact layer which includes a superlattice layer comprising n-type CdSe and n-type ZnTe stacked with each other, on a ZnTe-base compound semiconductor layer; a A II-VI compound semiconductor crystal comprising an n-type contact layer which includes an n-type ZnCdSeTe composition-graded layer in which composition of Zn, Cd, Se and Te is gradually varies, on a ZnTe-base compound semiconductor layer; a II-VI compound semiconductor crystal comprising a p-type contact layer which includes a superlattice layer comprising p-type CdSe and p-type ZnTe stacked with each other, on a CdSe-base compound semiconductor layer; and a II-VI compound semiconductor crystal comprising a p-type contact layer which includes a p-type ZnCdSeTe composition-graded layer in which composition of Zn, Cd, Se and Te is gradually varied, on a CdSe-base compound semiconductor layer.
摘要翻译：本发明涉及包含n型接触层的II-VI族化合物半导体晶体，所述n型接触层包括在ZnTe基化合物半导体层上彼此堆叠的包含n型CdSe和n型ZnTe的超晶格层; 包括在ZnTe基化合物半导体层上包含Zn，Cd，Se和Te的组成逐渐变化的n型ZnCdSeTe组成梯度层的n型接触层的A II-VI化合物半导体晶体; 包括p型接触层的II-VI族化合物半导体晶体，其包含在CdSe基化合物半导体层上彼此堆叠的包含p型CdSe和p型ZnTe的超晶格层; 以及包含在CdSe基化合物半导体层上包含Zn，Cd，Se和Te的组成逐渐变化的p型ZnCdSeTe组成分级层的p型接触层的II-VI族化合物半导体晶体。

16. 发明授权

US09524846B2 Target structure and X-ray generating apparatus 有权
标题翻译：目标结构和X射线发生装置
公开(公告)号：US09524846B2
公开(公告)日：2016-12-20
申请号：US14237605
申请日：2012-08-08
申请人： Yasue Sato , Takao Ogura , Kazuyuki Ueda , Ichiro Nomura
发明人： Yasue Sato , Takao Ogura , Kazuyuki Ueda , Ichiro Nomura
IPC分类号： H01J35/18 , H01J35/08 , G01N23/04
CPC分类号： H01J35/08 , G01N23/04 , H01J35/18 , H01J2235/087 , H01J2235/088 , H01J2235/186
摘要： In a target structure according to the present invention, a target is provided on a central area of an insulating substrate, and a first conductive member for supplying a voltage to the target is provided on a peripheral area of the insulating substrate which is exclusive of an area overlapping the target and is not covered by the target, so that the first conductive member is in contact with and electrically connected to the peripheral portion of the target. Consequently, it is possible to easily form a voltage supply line to the target without preventing diffusion of a heat generated in the target to the substrate and while suppressing emission of an unnecessary X-ray.
摘要翻译：在根据本发明的目标结构中，在绝缘基板的中心区域上设置目标，并且在绝缘基板的外围区域上设置用于向靶提供电压的第一导电部件，该外围区域不包括区域与目标重叠，并且不被目标覆盖，使得第一导电构件与靶的周边部分接触并电连接。因此，可以容易地在目标物上形成电压供给线，而不会妨碍目标产生的热量扩散到基板上，同时抑制不必要的X射线的发射。

17. 发明授权

US09508524B2 Radiation generating apparatus and radiation imaging apparatus 有权
标题翻译：辐射发生装置和放射线成像装置
公开(公告)号：US09508524B2
公开(公告)日：2016-11-29
申请号：US14233172
申请日：2012-07-11
申请人： Yoshihiro Yanagisawa , Kazuyuki Ueda , Ichiro Nomura , Miki Tamura , Shuji Aoki , Kazuhiro Sando
发明人： Yoshihiro Yanagisawa , Kazuyuki Ueda , Ichiro Nomura , Miki Tamura , Shuji Aoki , Kazuhiro Sando
IPC分类号： H01J35/12 , H05G1/02 , H05G1/04 , H01J35/16
CPC分类号： H01J35/12 , H01J35/16 , H01J2235/122 , H01J2235/166 , H01J2235/186 , H05G1/025 , H05G1/04
摘要： A radiation generating apparatus of the present invention includes an envelope 1 including a first window 2 allowing radiation to pass; a radiation tube 10 that is accommodated in the envelope 1, and includes a second window 15 allowing radiation to pass, at a position opposite to the first window 2; a radiation passing hole 21 that is thermally connected to the second window 15 and communicates with the second window 15; and a radiation shielding member 16 protruding from the second window 15 toward the first window 2. In this apparatus, a thermally conductive member 17 having a higher thermal conductivity than the radiation shielding member 16 is connected to an outer periphery of the protruding portion of the radiation shielding member 16. The simple configuration can shield unnecessary radiation, and cool the target, while facilitating reduction in weight.
摘要翻译：本发明的辐射发生装置包括：包含允许辐射通过的第一窗口2的信封1; 容纳在外壳1中的辐射管10，并且在与第一窗口2相对的位置处包括允许辐射通过的第二窗口15; 与第二窗口15热连接并与第二窗口15连通的辐射通过孔21; 以及从第二窗口15向第一窗口2突出的辐射屏蔽构件16.在该装置中，具有比辐射屏蔽构件16更高的导热性的导热构件17连接到第一窗口15的突出部分的外周辐射屏蔽构件16.简单的构造可以屏蔽不必要的辐射，并且冷却目标，同时有利于减轻重量。

18. 发明授权

US09281155B2 Radiation generating apparatus and radiation imaging apparatus 有权
标题翻译：辐射发生装置和放射线成像装置
公开(公告)号：US09281155B2
公开(公告)日：2016-03-08
申请号：US13884339
申请日：2011-11-08
申请人： Kazuyuki Ueda , Miki Tamura , Yasue Sato , Takao Ogura , Ichiro Nomura , Shuji Aoki
发明人： Kazuyuki Ueda , Miki Tamura , Yasue Sato , Takao Ogura , Ichiro Nomura , Shuji Aoki
IPC分类号： H01J35/02 , H01J35/18 , H05G1/02 , H05G1/04
CPC分类号： H01J35/02 , H01J35/18 , H01J2235/1204 , H01J2235/186 , H05G1/025 , H05G1/04
摘要： A radiation generating apparatus has a radiation generating tube held in a holding container 12 and a cooling medium between the holding container and the radiation generating tube. The radiation generating tube includes an envelope with an aperture, an electron emitting source arranged in the envelope, a target arranged facing the source, for generating radiation responsive to irradiation with an electron beam emitted from the source, and a tubular shield for holding the target by an inner wall thereof and shielding part of the radiation emitted from the target. The shield is arranged to protrude outward of the envelope so that the target is positioned on an outer side of the aperture, and the cooling medium contacts at least a part of the shield.
摘要翻译：辐射发生装置具有保持在保持容器12中的辐射生成管和保持容器与辐射生成管之间的冷却介质。辐射生成管包括具有孔的外壳，布置在外壳中的电子发射源，面向源的目标物体，用于响应于从源发射的电子束的照射产生辐射，以及用于保持靶的管状护罩通过其内壁和从目标发射的辐射的屏蔽部分。屏蔽被布置成从外壳向外突出，使得靶位于孔的外侧，并且冷却介质接触屏蔽的至少一部分。

19. 发明申请

US20140177800A1 TARGET STRUCTURE AND X-RAY GENERATING APPARATUS 有权
标题翻译：目标结构和X射线发生装置
公开(公告)号：US20140177800A1
公开(公告)日：2014-06-26
申请号：US14237605
申请日：2012-08-08
申请人： Yasue Sato , Takao Ogura , Kazuyuki Ueda , Ichiro Nomura
发明人： Yasue Sato , Takao Ogura , Kazuyuki Ueda , Ichiro Nomura
IPC分类号： H01J35/08 , G01N23/04
CPC分类号： H01J35/08 , G01N23/04 , H01J35/18 , H01J2235/087 , H01J2235/088 , H01J2235/186
摘要： In a target structure according to the present invention, a target is provided on a central area of an insulating substrate, and a first conductive member for supplying a voltage to the target is provided on a peripheral area of the insulating substrate which is exclusive of an area overlapping the target and is not covered by the target, so that the first conductive member is in contact with and electrically connected to the peripheral portion of the target. Consequently, it is possible to easily form a voltage supply line to the target without preventing diffusion of a heat generated in the target to the substrate and while suppressing emission of an unnecessary X-ray.
摘要翻译：在根据本发明的目标结构中，在绝缘基板的中心区域上设置目标，并且在绝缘基板的外围区域上设置用于向靶提供电压的第一导电部件，该外围区域不包括区域与目标重叠，并且不被目标覆盖，使得第一导电构件与靶的周边部分接触并电连接。因此，可以容易地在目标物上形成电压供给线，而不会妨碍目标产生的热量扩散到基板上，同时抑制不必要的X射线的发射。

20. 发明申请

US20140153695A1 RADIATION GENERATING APPARATUS AND RADIATION IMAGING APPARATUS 有权
标题翻译：辐射发生装置和放射成像装置
公开(公告)号：US20140153695A1
公开(公告)日：2014-06-05
申请号：US14131859
申请日：2012-07-24
申请人： Yoshihiro Yanagisawa , Shuji Aoki , Miki Tamura , Kazuyuki Ueda , Ichiro Nomura
发明人： Yoshihiro Yanagisawa , Shuji Aoki , Miki Tamura , Kazuyuki Ueda , Ichiro Nomura
IPC分类号： H01J35/12 , G01N23/04 , H01J35/16
CPC分类号： H01J35/12 , G01N23/04 , H01J35/16 , H01J2235/122 , H01J2235/166 , H01J2235/186 , H05G1/025 , H05G1/04
摘要： A radiation generating apparatus includes: an envelope 1 having a first window 2 through which a radiation is transmitted; and a radiation tube 10 being held within the envelope 1, and having a second window 15 which is arranged in opposition to the first window 2, and through which the radiation is transmitted; and a radiation shielding member 16 thermally connected to the second window 15, having a radiation transmitting hole 21 arranged in communication with the second window 15, and having a protruding portion protruding from the second window 15 toward the first window 2. A thermal conducting member 17 having a higher thermal conductivity rather than that of the radiation shielding member 16 is connected to the protruding portion of the radiation shielding member 16. The radiation generating apparatus can shield an unnecessary radiation and cool a target with a simple structure and is entirely reduced in weight.
摘要翻译：辐射发生装置包括：具有第一窗口2的信封1，通过该第一窗口发射辐射; 并且辐射管10保持在外壳1内，并且具有与第一窗口2相对布置的第二窗口15，辐射通过该第二窗口15被传送; 以及与第二窗口15热连接的辐射屏蔽构件16，具有与第二窗口15连通布置的辐射透射孔21，并且具有从第二窗口15朝向第一窗口2突出的突出部分。导热构件 17具有较高的导热率而不是辐射屏蔽构件16的导热系数17连接到辐射屏蔽构件16的突出部分。辐射发生装置可以屏蔽不需要的辐射并以简单的结构冷却目标，并且完全减少重量。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式