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11. 发明申请

US20090102829A1 PIXEL CIRCUIT AND IMAGE DISPLAY APPARATUS HAVING THE PIXEL CIRCUIT 有权
标题翻译：具有像素电路的像素电路和图像显示装置
公开(公告)号：US20090102829A1
公开(公告)日：2009-04-23
申请号：US11683872
申请日：2007-03-08
申请人： Katsumi Abe , Hideya Kumomi , Ryo Hayashi , Masafumi Sano
发明人： Katsumi Abe , Hideya Kumomi , Ryo Hayashi , Masafumi Sano
IPC分类号： G06F3/038 , G09G3/20
CPC分类号： G09G3/325 , G09G2300/0819 , G09G2300/0842 , G09G2300/0861 , G09G2320/043
摘要： A pixel circuit and an image display apparatus are provided making use of a hysteresis characteristics of a transistor for driving a display element. The pixel circuit comprises: a transistor providing both different first and second relations between a gate voltage value and a drain current value at a transition from off state to an on state, and from the on state transits to the off state respectively; a display element supplied as a drive current with a current controlled by the transistor; and a capacitor element connected to a gate electrode of the transistor. One of the first and second relations is utilized during a first period for setting the drive current to be supplied to the display element. And, the other of the first and second relations is utilized during a second period for supplying the drive current to the display element to effect light emission.
摘要翻译：使用用于驱动显示元件的晶体管的滞后特性来提供像素电路和图像显示装置。像素电路包括：晶体管，在从断开状态转换到导通状态时，分别在栅极电压值和漏极电流值之间分别具有不同的第一和第二关系，以及从导通状态转移到断开状态。以由晶体管控制的电流作为驱动电流提供的显示元件; 以及连接到晶体管的栅电极的电容器元件。第一和第二关系中的一个在第一时段期间被利用来设定要提供给显示元件的驱动电流。并且，在第二时段期间利用第一和第二关系中的另一个来向显示元件提供驱动电流以实现发光。

12. 发明申请

US20070090365A1 Field-effect transistor including transparent oxide and light-shielding member, and display utilizing the transistor 审中-公开
标题翻译：包括透明氧化物和遮光构件的场效应晶体管和利用晶体管的显示器
公开(公告)号：US20070090365A1
公开(公告)日：2007-04-26
申请号：US11583022
申请日：2006-10-19
申请人： Ryo Hayashi , Masafumi Sano , Katsumi Abe , Hideya Kumomi , Kojiro Nishi
发明人： Ryo Hayashi , Masafumi Sano , Katsumi Abe , Hideya Kumomi , Kojiro Nishi
IPC分类号： H01L29/04
CPC分类号： H01L29/78633 , G02F1/1368 , H01L27/1225 , H01L27/3248 , H01L27/3272 , H01L29/7869 , H01L29/78693 , H01L2251/5338
摘要： A field-effect transistor includes a substrate, a source electrode, a drain electrode, a gate electrode, a gate-insulating film, and an active layer. The active layer contains an oxide having a transmittance of 70% or more in the wavelength range of 400 to 800 nm. A light-shielding member is provided as a light-shielding structure for the active layer, for example, on the bottom face of the substrate.
摘要翻译：场效应晶体管包括衬底，源电极，漏电极，栅电极，栅极绝缘膜和有源层。有源层含有在400〜800nm的波长范围内透过率为70％以上的氧化物。作为有源层的遮光结构，例如在基板的底面设置遮光部件。

13. 发明申请

US20090072232A1 Thin-Film Transistor and Display Device using Oxide Semiconductor 有权
标题翻译：使用氧化物半导体的薄膜晶体管和显示装置
公开(公告)号：US20090072232A1
公开(公告)日：2009-03-19
申请号：US12281783
申请日：2007-02-23
申请人： Ryo Hayashi , Katsumi Abe , Masafumi Sano
发明人： Ryo Hayashi , Katsumi Abe , Masafumi Sano
IPC分类号： H01L29/786
CPC分类号： H01L29/7869 , H01L21/02422 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L21/28202 , H01L29/4908 , H01L29/518 , H01L29/66969
摘要： The thin-film transistor of the present invention has at least a semiconductor layer including: on a substrate, a source electrode, a drain electrode, and a channel region; a gate insulating film; and a gate electrode, wherein the semiconductor layer is an oxide semiconductor layer, and wherein the gate insulating film is amorphous silicon including at least O and N, and the gate insulating film has a distribution of an oxygen concentration in a thickness direction so that the oxygen concentration is high in the side of an interface with an oxide semiconductor layer and the oxygen concentration decreases toward the side of the gate electrode.
摘要翻译：本发明的薄膜晶体管至少具有半导体层，该半导体层包括：基板，源电极，漏电极和沟道区; 栅极绝缘膜; 以及栅电极，其中所述半导体层是氧化物半导体层，并且其中所述栅极绝缘膜是至少包括至少O和N的非晶硅，并且所述栅极绝缘膜具有在厚度方向上的氧浓度的分布，使得在与氧化物半导体层的界面侧的氧浓度高，并且氧浓度朝向栅电极侧减小。

14. 发明授权

US07923723B2 Thin-film transistor and display device using oxide semiconductor 有权
标题翻译：薄膜晶体管和使用氧化物半导体的显示器件
公开(公告)号：US07923723B2
公开(公告)日：2011-04-12
申请号：US12281783
申请日：2007-02-23
申请人： Ryo Hayashi , Katsumi Abe , Masafumi Sano
发明人： Ryo Hayashi , Katsumi Abe , Masafumi Sano
IPC分类号： H01L29/786 , H01L31/0376 , H01L29/04
CPC分类号： H01L29/7869 , H01L21/02422 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L21/28202 , H01L29/4908 , H01L29/518 , H01L29/66969
摘要： The thin-film transistor of the present invention has at least a semiconductor layer including: on a substrate, a source electrode, a drain electrode, and a channel region; a gate insulating film; and a gate electrode, wherein the semiconductor layer is an oxide semiconductor layer, and wherein the gate insulating film is amorphous silicon including at least O and N, and the gate insulating film has a distribution of an oxygen concentration in a thickness direction so that the oxygen concentration is high in the side of an interface with an oxide semiconductor layer and the oxygen concentration decreases toward the side of the gate electrode.
摘要翻译：本发明的薄膜晶体管至少具有半导体层，该半导体层包括：基板，源电极，漏电极和沟道区; 栅极绝缘膜; 以及栅电极，其中所述半导体层是氧化物半导体层，并且其中所述栅极绝缘膜是至少包括至少O和N的非晶硅，并且所述栅极绝缘膜具有在厚度方向上的氧浓度的分布，使得在与氧化物半导体层的界面侧的氧浓度高，并且氧浓度朝向栅电极侧减小。

15. 发明授权

US08445902B2 Thin film transistor and method of manufacturing the same 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US08445902B2
公开(公告)日：2013-05-21
申请号：US12990408
申请日：2009-04-28
申请人： Ayumu Sato , Ryo Hayashi , Hisato Yabuta , Masafumi Sano
发明人： Ayumu Sato , Ryo Hayashi , Hisato Yabuta , Masafumi Sano
IPC分类号： H01L29/10 , H01L29/12
CPC分类号： H01L29/7869 , H01L29/78621
摘要： Provided are a coplanar structure thin film transistor that allows a threshold voltage to change only a little under electric stress, and a method of manufacturing the same. The thin film transistor includes on a substrate at least: a gate electrode; a gate insulating layer; an oxide semiconductor layer including a source electrode, a drain electrode, and a channel region; a channel protection layer; and an interlayer insulating layer. The channel protection layer includes one or more layers, the layer in contact with the oxide semiconductor layer among the one or more layers being made of an insulating material containing oxygen, ends of the channel protection layer are thinner than a central part of the channel protection layer, the interlayer insulating layer contains hydrogen, and regions of the oxide semiconductor layer that are in direct contact with the interlayer insulating layer form the source electrode and the drain electrode.
摘要翻译：提供一种共面结构薄膜晶体管，其制造方法允许阈值电压在电应力下变化很小。薄膜晶体管至少在基板上包括：栅电极; 栅极绝缘层; 包括源电极，漏电极和沟道区的氧化物半导体层; 通道保护层; 和层间绝缘层。沟道保护层包括一层或多层，一层或多层中与氧化物半导体层接触的层由含氧的绝缘材料制成，沟道保护层的端部比通道保护层的中心部分薄层间绝缘层含有氢，与层间绝缘层直接接触的氧化物半导体层的区域形成源电极和漏电极。

16. 发明申请

US20110042670A1 THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US20110042670A1
公开(公告)日：2011-02-24
申请号：US12990408
申请日：2009-04-28
申请人： Ayumu Sato , Ryo Hayashi , Hisato Yabuta , Masafumi Sano
发明人： Ayumu Sato , Ryo Hayashi , Hisato Yabuta , Masafumi Sano
IPC分类号： H01L29/786 , H01L21/44
CPC分类号： H01L29/7869 , H01L29/78621
摘要： Provided are a coplanar structure thin film transistor that allows a threshold voltage to change only a little under electric stress, and a method of manufacturing the same. The thin film transistor includes on a substrate at least: a gate electrode; a gate insulating layer; an oxide semiconductor layer including a source electrode, a drain electrode, and a channel region; a channel protection layer; and an interlayer insulating layer. The channel protection layer includes one or more layers, the layer in contact with the oxide semiconductor layer among the one or more layers being made of an insulating material containing oxygen, ends of the channel protection layer are thinner than a central part of the channel protection layer, the interlayer insulating layer contains hydrogen, and regions of the oxide semiconductor layer that are in direct contact with the interlayer insulating layer form the source electrode and the drain electrode.
摘要翻译：提供一种共面结构薄膜晶体管，其制造方法允许阈值电压在电应力下变化很小。薄膜晶体管至少在基板上包括：栅电极; 栅极绝缘层; 包括源电极，漏电极和沟道区的氧化物半导体层; 通道保护层; 和层间绝缘层。沟道保护层包括一层或多层，一层或多层中与氧化物半导体层接触的层由含氧的绝缘材料制成，沟道保护层的端部比通道保护层的中心部分薄层间绝缘层含有氢，与层间绝缘层直接接触的氧化物半导体层的区域形成源电极和漏电极。

17. 发明授权

US07855379B2 Electron device using oxide semiconductor and method of manufacturing the same 有权
标题翻译：使用氧化物半导体的电子器件及其制造方法
公开(公告)号：US07855379B2
公开(公告)日：2010-12-21
申请号：US12123103
申请日：2008-05-19
申请人： Ryo Hayashi , Masafumi Sano
发明人： Ryo Hayashi , Masafumi Sano
IPC分类号： H01L29/10
CPC分类号： H01L29/7869 , H01L27/1225
摘要： In an electron device in which plural thin film transistors each having at least a source electrode, a drain electrode, a semiconductor region including a channel, a gate insulation film and a gate electrode are provided on a substrate, a device separation region provided between the plural thin film transistors and the semiconductor region are constituted by a same metal oxide layer, and resistance of the semiconductor region is formed to be lower than resistance of the device separation region.
摘要翻译：在基板上设置有至少具有源电极，漏电极，包括沟道的半导体区域，栅极绝缘膜和栅极电极的多个薄膜晶体管的电子器件，设置在基板之间的器件分离区域多个薄膜晶体管和半导体区域由相同的金属氧化物层构成，半导体区域的电阻形成为低于器件分离区域的电阻。

18. 发明授权

US6132817A Method of manufacturing photoelectric transducer with improved ultrasonic and purification steps 失效
标题翻译：制造具有改进的超声波和净化步骤的光电传感器的方法
公开(公告)号：US6132817A
公开(公告)日：2000-10-17
申请号：US822607
申请日：1997-03-19
申请人： Nobuo Tokutake , Masafumi Sano , Ryo Hayashi , Makoto Higashikawa
发明人： Nobuo Tokutake , Masafumi Sano , Ryo Hayashi , Makoto Higashikawa
IPC分类号： H01L31/04 , H01L21/304 , H01L31/0392 , H01L31/052 , H01L31/076 , H01L31/20 , B05D3/10 , H05H1/24
CPC分类号： H01L31/076 , H01L31/03921 , H01L31/056 , H01L31/202 , H01L31/204 , H01L31/206 , Y02E10/52 , Y02E10/548 , Y02P70/521
摘要： A method of manufacturing a photoelectric transducer forms a functional film on a conductive substrate. The method comprises applying ultrasonic cleaning with a cleaning liquid containing water to the conductive substrate, then allowing the surface of the conductive substrate to contact purified water so as to import uniform oxidation and then forming the functional film thereon. The functional film is characterized in being formed with a metal layer as light-reflecting layer, a reflection enhancing layer, and a semiconductor photovoltaic device layer, prepared by a plasma CVD method, comprising a non-monocrystalline material containing silicon atoms as the matrix.
摘要翻译：光电转换器的制造方法在导电性基板上形成功能膜。该方法包括将超声波清洗用含有水的清洗液施加到导电性基材上，然后使导电性基材的表面与净化水接触，进行均匀氧化，然后在其上形成功能膜。功能膜的特征在于，通过等离子体CVD法制备的金属层作为光反射层，反射增强层和半导体光电器件层，其包含含有硅原子作为基体的非单晶材料。

19. 发明授权

US5429685A Photoelectric conversion element and power generation system using the same 失效
标题翻译：光电转换元件和使用相同的发电系统
公开(公告)号：US5429685A
公开(公告)日：1995-07-04
申请号：US150813
申请日：1993-11-12
申请人： Keishi Saito , Tatsuyuki Aoike , Masafumi Sano , Mitsuyuki Niwa , Ryo Hayashi , Masahiko Tonogaki
发明人： Keishi Saito , Tatsuyuki Aoike , Masafumi Sano , Mitsuyuki Niwa , Ryo Hayashi , Masahiko Tonogaki
IPC分类号： H01L31/0392 , H01L31/052 , H01L31/065 , H01L31/075 , H01L31/18 , H01L31/20 , H01L31/0376 , H01L31/0384
CPC分类号： H01L31/065 , H01L31/03921 , H01L31/056 , H01L31/075 , H01L31/1884 , H01L31/202 , H01L31/204 , Y02E10/52 , Y02E10/548 , Y02P70/521 , Y10S136/293
摘要： The present invention provides a photovoltaic element in which the open-circuit voltage and the path length of holes are improved by preventing the recombination of photoexcited carriers.The p-i-n junction type photovoltaic element is composed of a p-type layer, an i-type layer of a laminated structure consisting of an i-type layer formed by RF plasma CVD on the p-type layer side and an i-type layer formed by microwave (.mu.W) CVD on the n-type layer side, or an i-type layer formed by microwave (.mu.W) plasma CVD on the p-type layer side and an i-type layer formed by RF plasma CVD on the n-type layer side, characterized in that the i-type layer formed by .mu.W plasma CVD is formed by a process in which a lower .mu.W energy and a higher RF energy than the .mu.W energy needed to decompose 100% of the source gas are simultaneously applied to a source gas containing Si and Ge at a pressure of 50 mTorr or less, such that the minimum value of the bandgap is shifted toward the p-type layer side, away from the center of the i-type layer, and the i-type layer formed by RF plasma CVD is formed 30 nm thick or less by using a source gas containing a silicon-containing gas at a deposition rate of 2 nm/sec or less.
摘要翻译：本发明提供一种光电元件，其中通过防止光激发载流子的复合，提高了开路电压和空穴的路径长度。 pin结型光电元件由p型层，由p型层侧的RF等离子体CVD形成的i型层构成的层叠结构的i型层和形成为i型层的i型层构成通过在n型层侧的微波（μW）CVD或在p型层侧由微波（μW）等离子体CVD形成的i型层和通过RF等离子体CVD形成的i型层 n型层侧，其特征在于，通过以下步骤形成由μW等离子体CVD形成的i型层，其中相比于分解100％的源所需的μW能量较低的μW能量和较高的RF能量在50mTorr以下的压力下将气体同时施加到含有Si和Ge的源气体，使得带隙的最小值朝着p型层侧偏离i型层的中心，通过使用含有含硅气体的源气体，通过RF等离子体CVD形成的i型层形成为30nm以下速度为2nm / sec以下。

20. 发明授权

US08436349B2 Thin-film transistor fabrication process and display device 有权
标题翻译：薄膜晶体管制造工艺及显示装置
公开(公告)号：US08436349B2
公开(公告)日：2013-05-07
申请号：US12524138
申请日：2008-02-18
申请人： Masafumi Sano , Ryo Hayashi
发明人： Masafumi Sano , Ryo Hayashi
IPC分类号： H01L29/10
CPC分类号： H01L29/7869 , H01L27/1225
摘要： In a process for fabricating a thin-film transistor in which a gate electrode 4 is to be formed on a substrate 1, the process has the steps of forming the gate electrode 4 on the substrate 1, forming a metal oxide layer 7 in such a way as to cover the gate electrode 4, forming a source electrode 6 and a drain electrode 5, and carrying out annealing in an inert gas to change part of the metal oxide layer 7 into a channel region.
摘要翻译：在基板1上形成栅电极4的薄膜晶体管的制造工序中，具有如下步骤：在基板1上形成栅电极4，在该基板1上形成金属氧化物层7 以覆盖栅电极4的方式形成源电极6和漏电极5，并且在惰性气体中进行退火以将金属氧化物层7的一部分改变为沟道区。

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