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11. 发明授权

US08043427B2 Semiconductor wafers of silicon and method for their production 有权
标题翻译：硅半导体晶圆及其生产方法
公开(公告)号：US08043427B2
公开(公告)日：2011-10-25
申请号：US12011713
申请日：2008-01-29
申请人： Andreas Sattler , Wilfried von Ammon , Martin Weber , Walter Haeckl , Herbert Schmidt
发明人： Andreas Sattler , Wilfried von Ammon , Martin Weber , Walter Haeckl , Herbert Schmidt
IPC分类号： C30B15/22
CPC分类号： C30B29/06 , C30B15/203
摘要： Semiconductor wafers of silicon are produced by pulling a single crystal growing on a phase boundary from a melt contained in a crucible and cutting of semiconductor wafers therefrom, wherein during pulling of the single crystal, heat is delivered to a center of the phase boundary and a radial profile of a ratio V/G from the center to an edge of the phase boundary is controlled, G being the temperature gradient perpendicular to the phase boundary and V being the pull rate. The radial profile of the ratio V/G is controlled so that the effect of thermomechanical stress in the single crystal adjoining the phase boundary, is compensated with respect to creation of intrinsic point defects. The invention also relates to defect-free semiconductor wafers of silicon, which can be produced economically by this method.
摘要翻译：硅的半导体晶片是通过从包含在坩埚中的熔融物中拉出在相边界上生长的单晶并从其中切割半导体晶片而制造的，其中在单晶拉制期间，热被传递到相边界的中心，并且控制从相位边界的中心到边缘的比率V / G的径向轮廓，G是垂直于相边界的温度梯度，V是牵引速率。控制比率V / G的径向轮廓，使得邻接相位边界的单晶中的热机械应力的影响被补偿以产生固有点缺陷。本发明还涉及硅的无缺陷半导体晶片，其可以通过该方法经济地制造。

12. 发明申请

US20060254498A1 Silicon single crystal, and process for producing it 有权
标题翻译：硅单晶及其制造方法
公开(公告)号：US20060254498A1
公开(公告)日：2006-11-16
申请号：US11487669
申请日：2006-07-17
申请人： Martin Weber , Wilfried von Ammon , Herbert Schmidt , Janis Virbulis , Yuri Gelfgat , Leonid Gorbunov
发明人： Martin Weber , Wilfried von Ammon , Herbert Schmidt , Janis Virbulis , Yuri Gelfgat , Leonid Gorbunov
IPC分类号： C30B15/00 , C30B21/06 , C30B27/02 , C30B28/10 , C30B30/04
CPC分类号： C30B29/06 , C30B15/14 , C30B15/203 , C30B15/206 , Y10S117/917 , Y10T117/1068
摘要： A silicon single crystal which, over an ingot length of over 10 percent of the total ingot length, has a uniform defect picture and narrow radial dopant and oxygen variations. The process in accordance with the Czochralski method involves bringing about a temperature distribution in the melt in the region of the solidification interface which deviates from rotational symmetry.
摘要翻译：在单锭长度超过总锭长度的10％以上的硅单晶具有均匀的缺陷图像和窄的径向掺杂剂和氧的变化。根据Czochralski方法的方法涉及在固化界面的偏离旋转对称性的区域中引起熔体中的温度分布。

13. 发明授权

US08231725B2 Semiconductor wafers of silicon and method for their production 有权
标题翻译：硅半导体晶圆及其生产方法
公开(公告)号：US08231725B2
公开(公告)日：2012-07-31
申请号：US13225822
申请日：2011-09-06
申请人： Andreas Sattler , Wilfried von Ammon , Martin Weber , Walter Haeckl , Herbert Schmidt
发明人： Andreas Sattler , Wilfried von Ammon , Martin Weber , Walter Haeckl , Herbert Schmidt
IPC分类号： C30B29/06
CPC分类号： C30B29/06 , C30B15/203
摘要： Semiconductor wafers of silicon are produced by pulling a single crystal growing on a phase boundary from a melt contained in a crucible and cutting of semiconductor wafers therefrom, wherein during pulling of the single crystal, heat is delivered to a center of the phase boundary and a radial profile of a ratio V/G from the center to an edge of the phase boundary is controlled, G being the temperature gradient perpendicular to the phase boundary and V being the pull rate. The radial profile of the ratio V/G is controlled so that the effect of thermomechanical stress in the single crystal adjoining the phase boundary, is compensated with respect to creation of intrinsic point defects. The invention also relates to defect-free semiconductor wafers of silicon, which can be produced economically by this method.
摘要翻译：硅的半导体晶片是通过从包含在坩埚中的熔融物中拉出在相边界上生长的单晶并从其中切割半导体晶片而制造的，其中在单晶拉制期间，热被传递到相边界的中心，并且控制从相位边界的中心到边缘的比率V / G的径向轮廓，G是垂直于相边界的温度梯度，V是牵引速率。控制比率V / G的径向轮廓，使得邻接相位边界的单晶中的热机械应力的影响被补偿以产生固有点缺陷。本发明还涉及硅的无缺陷半导体晶片，其可以通过该方法经济地制造。

14. 发明申请

US20080187736A1 Semiconductor wafers of silicon and method for their production 有权
标题翻译：硅半导体晶圆及其生产方法
公开(公告)号：US20080187736A1
公开(公告)日：2008-08-07
申请号：US12011713
申请日：2008-01-29
申请人： Andreas Sattler , Wilfried von Ammon , Martin Weber , Walter Haeckl , Herbert Schmidt
发明人： Andreas Sattler , Wilfried von Ammon , Martin Weber , Walter Haeckl , Herbert Schmidt
IPC分类号： B32B9/00 , H01L21/20
CPC分类号： C30B29/06 , C30B15/203
摘要： Semiconductor wafers of silicon are produced by pulling a single crystal growing on a phase boundary from a melt contained in a crucible and cutting of semiconductor wafers therefrom, wherein during pulling of the single crystal, heat is delivered to a center of the phase boundary and a radial profile of a ratio V/G from the center to an edge of the phase boundary is controlled, G being the temperature gradient perpendicular to the phase boundary and V being the pull rate. The radial profile of the ratio V/G is controlled so that the effect of thermomechanical stress in the single crystal adjoining the phase boundary, is compensated with respect to creation of intrinsic point defects. The invention also relates to defect-free semiconductor wafers of silicon, which can be produced economically by this method.
摘要翻译：硅的半导体晶片是通过从包含在坩埚中的熔融物中拉出在相边界上生长的单晶并从其中切割半导体晶片而制造的，其中在单晶拉制期间，热被传递到相边界的中心，并且控制从相位边界的中心到边缘的比率V / G的径向轮廓，G是垂直于相边界的温度梯度，V是牵引速率。控制比率V / G的径向轮廓，使得邻接相位边界的单晶中的热机械应力的影响被补偿以产生固有点缺陷。本发明还涉及硅的无缺陷半导体晶片，其可以通过该方法经济地制造。

15. 发明授权

US07335256B2 Silicon single crystal, and process for producing it 有权
标题翻译：硅单晶及其制造方法
公开(公告)号：US07335256B2
公开(公告)日：2008-02-26
申请号：US11487669
申请日：2006-07-17
申请人： Martin Weber , Wilfried von Ammon , Herbert Schmidt , Janis Virbulis , Yuri Gelfgat , Leonid Gorbunov
发明人： Martin Weber , Wilfried von Ammon , Herbert Schmidt , Janis Virbulis , Yuri Gelfgat , Leonid Gorbunov
IPC分类号： C30B15/20
CPC分类号： C30B29/06 , C30B15/14 , C30B15/203 , C30B15/206 , Y10S117/917 , Y10T117/1068
摘要： A silicon single crystal which, over an ingot length of over 10 percent of the total ingot length, has a uniform defect picture and narrow radial dopant and oxygen variations. The process in accordance with the Czochralski method involves bringing about a temperature distribution in the melt in the region of the solidification interface which deviates from rotational symmetry.
摘要翻译：在单锭长度超过总锭长度的10％以上的硅单晶具有均匀的缺陷图像和窄的径向掺杂剂和氧的变化。根据Czochralski方法的方法涉及在固化界面的偏离旋转对称性的区域中引起熔体中的温度分布。

16. 发明申请

US20110316128A1 Semiconductor Wafers Of Silicon and Method For Their Production 有权
标题翻译：硅半导体晶片及其制造方法
公开(公告)号：US20110316128A1
公开(公告)日：2011-12-29
申请号：US13225822
申请日：2011-09-06
申请人： Andreas Sattler , Wilfried von Ammon , Martin Weber , Walter Haeckl , Herbert Schmidt
发明人： Andreas Sattler , Wilfried von Ammon , Martin Weber , Walter Haeckl , Herbert Schmidt
IPC分类号： H01L29/02
CPC分类号： C30B29/06 , C30B15/203
摘要： Semiconductor wafers of silicon are produced by pulling a single crystal growing on a phase boundary from a melt contained in a crucible and cutting of semiconductor wafers therefrom, wherein during pulling of the single crystal, heat is delivered to a center of the phase boundary and a radial profile of a ratio V/G from the center to an edge of the phase boundary is controlled, G being the temperature gradient perpendicular to the phase boundary and V being the pull rate. The radial profile of the ratio V/G is controlled so that the effect of thermomechanical stress in the single crystal adjoining the phase boundary, is compensated with respect to creation of intrinsic point defects. The invention also relates to defect-free semiconductor wafers of silicon, which can be produced economically by this method.
摘要翻译：硅的半导体晶片是通过从包含在坩埚中的熔融物中拉出在相边界上生长的单晶并从其中切割半导体晶片而制造的，其中在单晶拉制期间，热被传递到相边界的中心，并且控制从相位边界的中心到边缘的比率V / G的径向轮廓，G是垂直于相边界的温度梯度，V是牵引速率。控制比率V / G的径向轮廓，使得邻接相位边界的单晶中的热机械应力的影响被补偿以产生固有点缺陷。本发明还涉及硅的无缺陷半导体晶片，其可以通过该方法经济地制造。

17. 发明授权

US08172941B2 Method and device for producing semiconductor wafers of silicon 失效
标题翻译：用于制造硅半导体晶片的方法和装置
公开(公告)号：US08172941B2
公开(公告)日：2012-05-08
申请号：US12002881
申请日：2007-12-19
申请人： Martin Weber , Herbert Schmidt , Wilfried von Ammon
发明人： Martin Weber , Herbert Schmidt , Wilfried von Ammon
IPC分类号： C30B15/00 , C30B21/06 , C30B27/02 , C30B28/10 , C30B30/04
CPC分类号： C30B29/06 , C30B15/203 , C30B15/30 , C30B30/04 , Y10T117/1016 , Y10T117/1032
摘要： Semiconductor wafers of silicon are produced by pulling a single crystal from a melt contained in a crucible and slicing semiconductor wafers from the pulled single crystal, heat being delivered to a center of the growing single crystal at the boundary with the melt during the pulling of the single crystal, a CUSP magnetic field applied such that a neutral surface of the CUSP magnetic field intersects a pulling axis of the single crystal at a distance of at least 50 mm from a surface of the melt. An apparatus suitable therefore contains a CUSP field positioned such that a neutral field intersects the axis of the crystal in the crucible 50 mm or more from the melt surface.
摘要翻译：硅的半导体晶片通过从包含在坩埚中的熔体中拉出单晶并从拉出的单晶切片半导体晶片来产生，在拉伸单晶期间，热量被传送到与熔体边界处的生长单晶的中心单晶，施加CUSP磁场，使得CUSP磁场的中性表面与熔体表面至少50mm的距离与单晶的牵引轴相交。因此，合适的装置包含CUSP场，其定位成使得中性场与坩埚中的晶体的轴线相距熔融表面50mm以上。

18. 发明申请

US20080153261A1 Method and device for producing semiconductor wafers of silicon 失效
标题翻译：用于制造硅半导体晶片的方法和装置
公开(公告)号：US20080153261A1
公开(公告)日：2008-06-26
申请号：US12002881
申请日：2007-12-19
申请人： Martin Weber , Herbert Schmidt , Wilfried von Ammon
发明人： Martin Weber , Herbert Schmidt , Wilfried von Ammon
IPC分类号： C30B11/00 , H01L21/78
CPC分类号： C30B29/06 , C30B15/203 , C30B15/30 , C30B30/04 , Y10T117/1016 , Y10T117/1032
摘要： Semiconductor wafers of silicon are produced by pulling a single crystal from a melt contained in a crucible and slicing semiconductor wafers from the pulled single crystal, heat being delivered to a center of the growing single crystal at the boundary with the melt during the pulling of the single crystal, a CUSP magnetic field applied such that a neutral surface of the CUSP magnetic field intersects a pulling axis of the single crystal at a distance of at least 50 mm from a surface of the melt. An apparatus suitable therefore contains a CUSP field positioned such that a neutral field intersects the axis of the crystal in the crucible 50 mm or more from the melt surface.
摘要翻译：硅的半导体晶片通过从包含在坩埚中的熔体中拉出单晶并从拉出的单晶切片半导体晶片来产生，在拉伸单晶期间，热量被传送到与熔体边界处的生长单晶的中心单晶，施加CUSP磁场，使得CUSP磁场的中性表面与熔体表面至少50mm的距离与单晶的牵引轴相交。因此，合适的装置包含CUSP场，其定位成使得中性场与坩埚中的晶体的轴线相距熔融表面50mm以上。

19. 发明授权

US08221550B2 Process and apparatus for producing a single crystal of semiconductor material 有权
标题翻译：用于制造半导体材料的单晶的工艺和设备
公开(公告)号：US08221550B2
公开(公告)日：2012-07-17
申请号：US12640755
申请日：2009-12-17
申请人： Wilfried von Ammon
发明人： Wilfried von Ammon
IPC分类号： C30B35/00
CPC分类号： C30B29/06 , C30B13/08 , C30B13/10 , C30B13/14 , C30B13/16 , C30B13/30 , Y10T117/10 , Y10T117/1032 , Y10T117/1052 , Y10T117/1056 , Y10T117/1068
摘要： A process for producing a single crystal of semiconductor material, in which fractions of a melt, are kept in liquid form by a pulling coil, solidify on a seed crystal to form the growing single crystal, and granules are melted in order to maintain the growth of the single crystal. The melting granules are passed to the melt after a delay. There is also an apparatus which Is suitable for carrying out the process and has a device which delays mixing of the molten granules and of the melt.
摘要翻译：一种制造半导体材料的单晶的方法，其中熔体的一部分通过拉线圈保持液态，在晶种上固化以形成生长的单晶，并且将颗粒熔化以保持生长的单晶。熔化的颗粒在延迟后通入熔体。还有一种适用于进行该方法并具有延迟熔融颗粒和熔体混合的装置。

20. 发明申请

US20120039786A1 Silicon Wafer and Method For Producing It 有权
标题翻译：硅晶片及其生产方法
公开(公告)号：US20120039786A1
公开(公告)日：2012-02-16
申请号：US13191534
申请日：2011-07-27
申请人： Wilfried von Ammon , Gudrun Kissinger , Dawid Kot
发明人： Wilfried von Ammon , Gudrun Kissinger , Dawid Kot
IPC分类号： C01B33/02 , F24J3/00
CPC分类号： H01L21/3225 , C30B29/06 , C30B33/02
摘要： Silicon wafers having an oxygen concentration of 5·1017 to 7.5·1017 cm−3 have the following BMD densities after the following thermal processes, carried out alternatively: a BMD density of at most 1·108 cm−3 after a treatment for three hours at 780° C. and subsequently for 16 hours at 1000° C., and a BMD density of at least 1·109 cm−3 after heating of the silicon wafer at a heating rate of 1 K/min from a start temperature of 500° C. to a target temperature of 1000° C. and subsequent holding at 1000° C. for 16 hours. The wafers are prepared by a method of irradiation of a heated wafer with flashlamp which delivers energy which is from 50 to 100% of the energy density necessary for melting the wafer surface.
摘要翻译：氧化浓度为5×1017〜7.5×1017cm-3的硅片在以下热处理后具有以下BMD密度：交替进行处理3小时后的至少1×10 8 cm -3的BMD密度在780℃下，随后在1000℃下进行16小时，并且从起始温度500℃以1K /分钟的加热速率加热硅晶片之后，BMD密度为至少1×10 9 cm -3。 ℃至目标温度为1000℃，随后在1000℃下保持16小时。通过用闪光灯照射加热的晶片的方法制备晶片，其传递能量，其是熔化晶片表面所需的能量密度的50至100％。

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