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    • 17. 发明授权
    • Method for producing a Group III-V compound semiconductor
    • III-V族化合物半导体的制造方法
    • US07659190B2
    • 2010-02-09
    • US11140236
    • 2005-05-27
    • Masaya ShimizuShinichi MorishimaMakoto Sasaki
    • Masaya ShimizuShinichi MorishimaMakoto Sasaki
    • H01L21/28H01L21/3205
    • C30B25/02C30B25/18C30B29/403H01L21/0237H01L21/02458H01L21/02513H01L21/0254H01L21/02573H01L21/0262H01L33/007
    • A Group III-V compound semiconductor includes, at least, a substrate, a buffer layer of the general formula InuGavAlwN (wherein, 0≦u≦1, 0≦v≦1, 0≦w≦1, u+v+w=1) and a Group III-V compound semiconductor crystal layer of the general formula InxGayAlzN (wherein, 0≦x≦1, 0≦y≦1, 0≦z≦1, x+y+z=1), in this order, wherein the buffer layer has a thickness of at least about 5 Å and not more than about 90 Å. A method is provided for producing the Group III-V compound semiconductor, including forming a buffer layer of the general formula InuGavAlwN on a substrate to give a thickness of at least about 5 Å and not more than about 90 Å at temperatures lower than the growing temperature of the compound semiconductor crystal layer before growing the compound semiconductor crystal layer, and then growing a Group III-V compound semiconductor crystal layer of the general formula InxGayAlzN on the buffer layer.
    • III-V族化合物半导体至少包括基底,通式为InuGavAlwN的缓冲层(其中,0≤u≤1,0<= v <= 1,0 <= w <= 1, u + v + w =​​ 1)和通式为In x Ga y Al z N的III-V族化合物半导体晶体层(其中,0≤x≤1,0≤y≤1,0≤z≤1, x + y + z = 1),其中缓冲层具有至少约和不大于约的厚度。 提供了用于制备III-V族化合物半导体的方法,包括在基底上形成通式为InuGavAlwN的缓冲层,以在比生长的温度低的温度下产生至少约和不大于约的厚度 在化合物半导体晶体层生长之前的化合物半导体晶体层的温度,然后在缓冲层上生长通式为In x Ga y Al z N的III-V族化合物半导体晶体层。
    • 20. 发明授权
    • Program length extending or shortening device and method, and program length adjusting system
    • 程序长度扩展或缩短装置和方法以及程序长度调整系统
    • US07043136B2
    • 2006-05-09
    • US09827465
    • 2001-04-06
    • Tetsuo KaniShinichi MorishimaYoshiaki TanakaToru SuzukiMitsutoshi Shinkai
    • Tetsuo KaniShinichi MorishimaYoshiaki TanakaToru SuzukiMitsutoshi Shinkai
    • H04N5/93
    • G11B27/34G11B27/032G11B2220/90
    • A program length extending or shortening device for extending or shortening the program length in a digital video tape recorder of the image information compression recording method. The device comprises storage means for storing an image of a material video program reproduced and supplied from a predetermined recording medium by a reproducing device, and extending or shortening control means for extending or shortening the program length of the material video program to produce a target video program by skipping or reading duplicately the image of the material video program from the storage means in accordance with a program length extending or shortening ratio N based on the program lengths of the material video program and the target video program. According to the present invention, the program length can be freely extended or shortened using storage means of a small capacity while the recording device is being operated at a normal rate.
    • 一种用于扩展或缩短图像信息压缩记录方法的数字录像机中的节目长度的节目长度扩展或缩短装置。 该装置包括存储装置,用于存储由再现装置从预定记录介质再现和提供的素材视频节目的图像,以及扩展或缩短控制装置,用于扩展或缩短素材视频节目的节目长度以产生目标视频 通过基于素材视频节目和目标视频节目的节目长度,根据节目长度扩展或缩短比例N,从存储装置中重复地重复读取或读取素材视频节目的图像。 根据本发明,当记录装置以正常速率操作时,使用小容量的存储装置可以自由地扩展或缩短节目长度。