会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 18. 发明授权
    • Doping profile modification in P3I process
    • P3I过程中掺杂型材修改
    • US08288257B2
    • 2012-10-16
    • US12606897
    • 2009-10-27
    • Matthew D. Scotney-CastleMajeed A. FoadPeter I. Porshnev
    • Matthew D. Scotney-CastleMajeed A. FoadPeter I. Porshnev
    • H01L21/425
    • H01L21/2236H01J37/32412
    • Methods for implanting material into a substrate by a plasma immersion ion implanting process are provided. In one embodiment, a method for implanting material into a substrate includes providing a substrate into a processing chamber, the substrate comprising a substrate surface having a material layer formed thereon, generating a first plasma of a non-dopant processing gas, exposing the material layer to the plasma of the non-dopant processing gas, generating a second plasma of a dopant processing gas including a reacting gas adapted to produce dopant ions, and implanting dopant ions from the plasma into the material layer. The method may further include a cleaning or etch process.
    • 提供了通过等离子体浸没离子注入工艺将材料注入衬底的方法。 在一个实施例中,用于将材料注入衬底的方法包括将衬底提供到处理室中,所述衬底包括其上形成有材料层的衬底表面,产生非掺杂剂处理气体的第一等离子体,暴露材料层 涉及非掺杂剂处理气体的等离子体,产生掺杂剂处理气体的第二等离子体,所述掺杂剂处理气体包括适于产生掺杂剂离子的反应气体,以及将等离子体中的掺杂剂离子注入材料层。 该方法还可以包括清洁或蚀刻工艺。
    • 19. 发明授权
    • Conformal doping in P3I chamber
    • P3I室中的保形掺杂
    • US08129261B2
    • 2012-03-06
    • US12606877
    • 2009-10-27
    • Peter I. PorshnevMatthew D. Scotney-CastleMajeed A. Foad
    • Peter I. PorshnevMatthew D. Scotney-CastleMajeed A. Foad
    • H01L21/265H01L21/302H01L21/322
    • H01L21/2236H01J37/32412
    • Methods for implanting ions into a substrate by a plasma immersion ion implanting process are provided. In one embodiment, a method for implanting ions into a substrate includes providing a substrate into a processing chamber, the substrate comprising substrate surface having one or more features formed therein and each feature having one or more horizontal surfaces and one or more vertical surfaces, generating a plasma from a gas mixture including a reacting gas adapted to produce ions, depositing a material layer on the substrate surface and on at least one horizontal surface of the substrate feature, implanting ions from the plasma into the substrate by an isotropic process into at least one horizontal surface and into at least one vertical surface, and etching the material layer on the substrate surface and the at least one horizontal surface by an anisotropic process.
    • 提供了通过等离子体浸没离子注入工艺将离子注入衬底的方法。 在一个实施例中,用于将离子注入到衬底中的方法包括将衬底提供到处理室中,所述衬底包括具有形成在其中的一个或多个特征的衬底表面,并且每个特征具有一个或多个水平表面和一个或多个垂直表面, 来自包括适于产生离子的反应气体的气体混合物的等离子体,在衬底表面上沉积材料层和在衬底特征的至少一个水平表面上,通过各向同性方法将离子从等离子体注入到衬底中至少 一个水平表面并且进入至少一个垂直表面,并且通过各向异性工艺蚀刻衬底表面上的材料层和至少一个水平表面。