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11. 发明申请

US20100063859A1 Method and system for research and development management in an enterprise 有权
标题翻译：企业研发管理方法与制度
公开(公告)号：US20100063859A1
公开(公告)日：2010-03-11
申请号：US12283121
申请日：2008-09-09
申请人： Sandeep Mehta
发明人： Sandeep Mehta
IPC分类号： G06Q10/00
CPC分类号： G06Q10/06 , G06Q10/0631 , G06Q10/0635 , G06Q10/0639 , G06Q50/184
摘要： A method and system for capturing research decision flow in a Research and Development (R&D) activity are provided. The method includes defining an objective of the R&D activity and determining one or more requirements for fulfilling the objective of the R&D activity. Further, the method includes identifying a set of risks associated with failure to satisfy the one or more requirements. Furthermore, the method also includes developing a task plan to satisfy the one or more requirements and mitigate one or more risks of the set of risks. Furthermore, the method also includes linking the objective, the one or more requirements, the set of risks and the task plan, to generate a linked information record.
摘要翻译：提供了研究与开发（R＆D）活动中捕获研究决策流程的方法和系统。该方法包括定义研发活动的目标，确定实现研发活动目标的一个或多个要求。此外，该方法包括识别与不能满足一个或多个要求相关联的一组风险。此外，该方法还包括开发满足一个或多个要求的任务计划，并减轻该组风险的一个或多个风险。此外，该方法还包括将目标，一个或多个要求，一组风险和任务计划相关联，以生成链接的信息记录。

12. 发明授权

US07378335B2 Plasma implantation of deuterium for passivation of semiconductor-device interfaces 失效
标题翻译：用于钝化半导体器件界面的氘的等离子体注入
公开(公告)号：US07378335B2
公开(公告)日：2008-05-27
申请号：US11288828
申请日：2005-11-29
申请人： Steven R. Walther , Ukyo Jeong , Sandeep Mehta , Naushad K. Variam
发明人： Steven R. Walther , Ukyo Jeong , Sandeep Mehta , Naushad K. Variam
IPC分类号： H01L21/425
CPC分类号： H01L21/3003 , H01L21/28185 , H01L21/2822 , H01L21/28238
摘要： A method for fabricating a semiconductor-based device includes providing a substrate including a semiconductor layer, forming a gate dielectric layer on the semiconductor layer, forming a plasma including deuterium, plasma implanting deuterium from the plasma into the substrate, and annealing the substrate to promote passivation of the interface between the dielectric layer and the semiconductor layer.
摘要翻译：一种制造基于半导体的器件的方法，包括提供包括半导体层的衬底，在半导体层上形成栅介质层，形成包括氘的等离子体，将等离子体等离子体注入氘到衬底中，以及退火衬底以促进钝化介电层和半导体层之间的界面。

13. 发明授权

US07993698B2 Techniques for temperature controlled ion implantation 有权
标题翻译：温度控制离子注入技术
公开(公告)号：US07993698B2
公开(公告)日：2011-08-09
申请号：US11525878
申请日：2006-09-23
申请人： Julian Blake , Jonathan England , Scott Holden , Steven R. Walther , Reuel Liebert , Richard S. Muka , Ukyo Jeong , Jinning Liu , Kyu-Ha Shim , Sandeep Mehta
发明人： Julian Blake , Jonathan England , Scott Holden , Steven R. Walther , Reuel Liebert , Richard S. Muka , Ukyo Jeong , Jinning Liu , Kyu-Ha Shim , Sandeep Mehta
IPC分类号： C23C16/48 , C23C16/52 , C23C14/48 , C23C14/54 , C23C14/52
CPC分类号： H01J37/3171 , H01J2237/2001
摘要： Techniques for temperature-controlled ion implantation are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for temperature-controlled ion implantation. The apparatus may comprise at least one thermal sensor adapted to measure a temperature of a wafer during an ion implantation process inside an end station of an ion implanter. The apparatus may also comprise a thermal conditioning unit coupled to the end station. The apparatus may further comprise a controller in communication with the thermal sensor and the thermal conditioning unit, wherein the controller compares the measured temperature to a desired wafer temperature and causes the thermal conditioning unit to adjust the temperature of the wafer based upon the comparison.
摘要翻译：公开了用于温度控制离子注入的技术。在一个特定的示例性实施例中，可以将技术实现为用于温度控制的离子注入的装置。该装置可以包括至少一个热传感器，适于在离子注入机的端站内的离子注入过程期间测量晶片的温度。该装置还可以包括耦合到终端站的热调节单元。该装置还可以包括与热传感器和热调节单元通信的控制器，其中控制器将测量的温度与期望的晶片温度进行比较，并且使得热调节单元基于比较来调节晶片的温度。

14. 发明申请

US20080185537A1 IN SITU SURFACE CONTAMINATION REMOVAL FOR ION IMPLANTING 有权
标题翻译：用于离子植入的现场表面污染除去
公开(公告)号：US20080185537A1
公开(公告)日：2008-08-07
申请号：US12099420
申请日：2008-04-08
申请人： Steve Walther , Sandeep Mehta , Naushad Variam , Ukyo Jeong
发明人： Steve Walther , Sandeep Mehta , Naushad Variam , Ukyo Jeong
IPC分类号： H01J37/08
CPC分类号： C03C23/0055 , B08B7/0057 , B08B7/0071 , C03C15/00 , C03C23/002 , H01J37/321 , H01J37/32412 , H01J2237/335 , H01L21/02046 , H01L21/26513
摘要： Methods and apparatus that introduce, within the ion implant chamber or an isolated chamber in communication therewith, the capability to remove contaminants and oxide surface layers on a wafer surface prior to ion implantation, are disclosed. The mechanisms for removal of contaminants include conducting: a low energy plasma etch, heating the wafer and application of ultraviolet illumination, either in combination or individually. As a result, implantation can occur immediately after the cleaning/preparation process without the contamination potential of exposure of the wafer to an external environment. The preparation allows for the removal of surface contaminants, such as water vapor, organic materials and surface oxides.
摘要翻译：公开了在离子注入室或与之连通的隔离室内引入在离子注入之前去除晶片表面上的污染物和氧化物表面层的能力的方法和装置。去除污染物的机理包括：组合或单独地进行低能量等离子体蚀刻，加热晶片和施加紫外线照明。结果，可以在清洁/制备过程之后立即进行植入，而不会使晶片暴露于外部环境的污染潜力。该制剂允许去除表面污染物，例如水蒸汽，有机材料和表面氧化物。

15. 发明申请

US20080076194A1 Techniques for temperature controlled ion implantation 有权
标题翻译：温度控制离子注入技术
公开(公告)号：US20080076194A1
公开(公告)日：2008-03-27
申请号：US11525878
申请日：2006-09-23
申请人： Julian Blake , Jonathan England , Scott Holden , Steven R. Walther , Reuel Liebert , Richard S. Muka , Ukyo Jeong , Jinning Liu , Kyu-Ha Shim , Sandeep Mehta
发明人： Julian Blake , Jonathan England , Scott Holden , Steven R. Walther , Reuel Liebert , Richard S. Muka , Ukyo Jeong , Jinning Liu , Kyu-Ha Shim , Sandeep Mehta
IPC分类号： H01L21/425
CPC分类号： H01J37/3171 , H01J2237/2001
摘要： Techniques for temperature-controlled ion implantation are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for temperature-controlled ion implantation. The apparatus may comprise at least one thermal sensor adapted to measure a temperature of a wafer during an ion implantation process inside an end station of an ion implanter. The apparatus may also comprise a thermal conditioning unit coupled to the end station. The apparatus may further comprise a controller in communication with the thermal sensor and the thermal conditioning unit, wherein the controller compares the measured temperature to a desired wafer temperature and causes the thermal conditioning unit to adjust the temperature of the wafer based upon the comparison.
摘要翻译：公开了用于温度控制离子注入的技术。在一个特定的示例性实施例中，可以将技术实现为用于温度控制的离子注入的装置。该装置可以包括至少一个热传感器，适于在离子注入机的端站内的离子注入过程期间测量晶片的温度。该装置还可以包括耦合到终端站的热调节单元。该装置还可以包括与热传感器和热调节单元通信的控制器，其中控制器将测量的温度与期望的晶片温度进行比较，并且使得热调节单元基于比较来调节晶片的温度。

16. 发明申请

US20080067434A1 Non-uniform ion implantation 有权
标题翻译：非均匀离子注入
公开(公告)号：US20080067434A1
公开(公告)日：2008-03-20
申请号：US11441633
申请日：2006-05-26
申请人： Steven R. Walther , Sandeep Mehta
发明人： Steven R. Walther , Sandeep Mehta
IPC分类号： H01J37/317
CPC分类号： H01J37/3171 , H01J37/3026 , H01J37/3172 , H01J2237/30461 , H01J2237/30472 , H01J2237/30488 , H01J2237/31703 , H01J2237/3171
摘要： A method includes receiving an input signal representative of a desired two-dimensional non-uniform dose pattern for a front surface of a workpiece, driving the workpiece relative to an ion beam to distribute the ion beam across the front surface of the workpiece, and controlling at least one parameter of an ion implanter when the ion beam is incident on the front surface of the workpiece to directly create the desired two-dimensional non-uniform dose pattern in one pass of the front surface of workpiece relative to the ion beam. The beam may be a scanned beam or a ribbon beam. An ion implanter is also provided.
摘要翻译：一种方法包括接收表示工件前表面的期望的二维不均匀剂量图案的输入信号，相对于离子束驱动工件以将离子束分布在工件的前表面上，并且控制离子注入机的至少一个参数，当离子束入射到工件的前表面上，以在工件前表面相对于离子束的一次通过中直接产生所需的二维非均匀剂量图案。光束可以是扫描光束或带状光束。还提供了离子注入机。

17. 发明申请

US20070045569A1 Ion implant beam angle integrity monitoring and adjusting 失效
标题翻译：离子注入束角完整性监测和调整
公开(公告)号：US20070045569A1
公开(公告)日：2007-03-01
申请号：US11217700
申请日：2005-08-31
申请人： Steven Walther , Ukyo Jeong , Sandeep Mehta
发明人： Steven Walther , Ukyo Jeong , Sandeep Mehta
IPC分类号： H01J37/08
CPC分类号： H01J37/3171 , H01J37/304 , H01J2237/24507 , H01J2237/24528
摘要： A system, method and program product for monitoring the beam angle integrity of an ion beam generated by an ion implanter system are disclosed. The invention utilizes at least one template with each template having a template surface that impedes the motion of an ion. Each template is configured such that an ion impacts the surface of the template if the trajectory of the template deviates from the optimum trajectory by a pre-determined maximum variance angle. The change caused by the impact of the ions with the template and/or a target is then measured to determine the amount of variance in the ion beam. Adjustments can then be made to the ion beam generator to correct for a misaligned beam.
摘要翻译：公开了一种用于监测由离子注入机系统产生的离子束的束角完整性的系统，方法和程序产品。本发明利用至少一个模板，每个模板具有阻碍离子运动的模板表面。每个模板被配置成使得如果模板的轨迹偏离最佳轨迹预定的最大方差角，则离子冲击模板的表面。然后测量由离子与模板和/或靶的影响引起的变化，以确定离子束中的方差量。然后可以对离子束发生器进行调整，以校正未对准的光束。

18. 发明授权

US06756600B2 Ion implantation with improved ion source life expectancy 有权
标题翻译：离子注入具有改善的离子源寿命
公开(公告)号：US06756600B2
公开(公告)日：2004-06-29
申请号：US09252845
申请日：1999-02-19
申请人： Che-Hoo Ng , Emi Ishida , Jaime M. Reyes , Jinning Liu , Sandeep Mehta
发明人： Che-Hoo Ng , Emi Ishida , Jaime M. Reyes , Jinning Liu , Sandeep Mehta
IPC分类号： H01J3708
CPC分类号： H01J27/08 , H01J37/08 , H01J2237/31701
摘要： A method of increasing ion source lifetime in an ion implantation system uses the introduction of an inert gas, such as argon or xenon, into the halide-containing source gas. Inert gas constituents have a cleansing effect in the plasma ambient by enhancing sputtering.
摘要翻译：在离子注入系统中增加离子源寿命的方法使用惰性气体（例如氩或氙）引入含卤素源气体中。惰性气体组分通过增强溅射在等离子体环境中具有清洁效果。

19. 发明授权

US08620702B2 Method and system for research and development management in an enterprise 有权
标题翻译：企业研发管理方法与制度
公开(公告)号：US08620702B2
公开(公告)日：2013-12-31
申请号：US12283121
申请日：2008-09-09
申请人： Sandeep Mehta
发明人： Sandeep Mehta
IPC分类号： G06Q10/00
CPC分类号： G06Q10/06 , G06Q10/0631 , G06Q10/0635 , G06Q10/0639 , G06Q50/184
摘要： A method and system for capturing research decision flow in a Research and Development (R&D) activity are provided. The method includes defining an objective of the R&D activity and determining one or more requirements for fulfilling the objective of the R&D activity. Further, the method includes identifying a set of risks associated with failure to satisfy the one or more requirements. Furthermore, the method also includes developing a task plan to satisfy the one or more requirements and mitigate one or more risks of the set of risks. Furthermore, the method also includes linking the objective, the one or more requirements, the set of risks and the task plan, to generate a linked information record.
摘要翻译：提供了研究与开发（R＆D）活动中捕获研究决策流程的方法和系统。该方法包括定义研发活动的目标，确定实现研发活动目标的一个或多个要求。此外，该方法包括识别与不能满足一个或多个要求相关联的一组风险。此外，该方法还包括开发满足一个或多个要求的任务计划，并减轻该组风险的一个或多个风险。此外，该方法还包括将目标，一个或多个要求，一组风险和任务计划相关联，以生成链接的信息记录。

20. 发明授权

US07886342B2 Distributed environment controlled access facility 失效
标题翻译：分布式环境控制访问设施
公开(公告)号：US07886342B2
公开(公告)日：2011-02-08
申请号：US12135290
申请日：2008-06-09
申请人： Rahul Jindani , Vinod Kannoth , Deepak Kanwar , Rinku Kanwar , Jay Krishnamurthy , Gregory L. McKee , Sandeep Mehta , Penny J. Peachey-Kountz , Ravi K. Ravipati
发明人： Rahul Jindani , Vinod Kannoth , Deepak Kanwar , Rinku Kanwar , Jay Krishnamurthy , Gregory L. McKee , Sandeep Mehta , Penny J. Peachey-Kountz , Ravi K. Ravipati
IPC分类号： G06F7/04 , H04L9/32 , H04L9/00
CPC分类号： H04L63/102
摘要： A computer implemented web based access control facility for a distributed environment, which allows users to request for access, take the request through appropriate approval work flow and finally make it available to the users and applications. This program also performs an automatic task of verifying the health of data, access control data as well as the entitlements, to avoid malicious user access. The system also provides an active interface to setup a backup, to delegate the duty in absence. Thus this system provides a comprehensive facility to grant, re-certify and control the entitlements and users in a distributed environment.
摘要翻译：用于分布式环境的计算机实现的基于网络的访问控制设施，其允许用户请求访问，通过适当的批准工作流程请求请求，并最终使其可用于用户和应用。该程序还执行一个自动任务来验证数据的健康状况，访问控制数据以及授权，以避免恶意用户访问。该系统还提供了一个主动界面来设置备份，以便在缺席时委派职责。因此，该系统提供了在分布式环境中授予，重新认证和控制权利和用户的综合设施。

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