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11. 发明授权

US06733679B2 Method of treating an electroless plating waste 有权
标题翻译：处理无电镀废物的方法
公开(公告)号：US06733679B2
公开(公告)日：2004-05-11
申请号：US10005737
申请日：2001-11-06
申请人： Valery M. Dubin , Chin-Chang Cheng , Christopher D. Thomas
发明人： Valery M. Dubin , Chin-Chang Cheng , Christopher D. Thomas
IPC分类号： C02F158
CPC分类号： C02F1/4672 , C02F1/52 , C02F1/66 , C02F1/72 , C02F2101/20 , C02F2103/16 , C02F2209/02 , C02F2209/06 , Y10S204/13
摘要： A method of treating an electroless plating waste is provided. The waste is contained and an ability of a reducing agent to reduce a metal of the waste is decreased, for example by adding a stabilizing chemical or by exposing the waste to an anode to which a positive voltage is applied. Poisonous and explosive gases evolve from the waste, which are vented. Upon completion, the waste is drained.
摘要翻译：提供了一种处理无电镀废料的方法。废弃物被包含，并且还原剂减少废物金属的能力降低，例如通过添加稳定化学品或通过将废物暴露于施加正电压的阳极。有毒和爆炸性气体从排放的废物中排出。完成后，废物被排干。

12. 发明授权

US06696758B2 Interconnect structures and a method of electroless introduction of interconnect structures 有权
标题翻译：互连结构和无电引入互连结构的方法
公开(公告)号：US06696758B2
公开(公告)日：2004-02-24
申请号：US10290776
申请日：2002-11-07
申请人： Valery M. Dubin , Christopher D. Thomas , Paul McGregor , Madhav Datta
发明人： Valery M. Dubin , Christopher D. Thomas , Paul McGregor , Madhav Datta
IPC分类号： H01L2348
CPC分类号： H01L21/76843 , H01L21/288 , H01L21/76846 , H01L21/76849 , H01L21/76864 , H01L21/76873 , H01L23/53228 , H01L23/53233 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： An apparatus including a substrate comprising a device having contact point; a dielectric layer overlying the device with an opening to the contact point; and an interconnect structure disposed in the opening including an interconnect material and a different conductive shunt material.
摘要翻译：一种包括具有接触点的装置的基板的装置，覆盖所述装置的电介质层具有到所述接触点的开口; 以及设置在开口中的互连结构，其包括互连材料和不同的导电分路材料。

13. 发明授权

US06605874B2 Method of making semiconductor device using an interconnect 有权
标题翻译：使用互连的半导体器件
公开(公告)号：US06605874B2
公开(公告)日：2003-08-12
申请号：US10025030
申请日：2001-12-19
申请人： Jihperng Leu , Christopher D. Thomas
发明人： Jihperng Leu , Christopher D. Thomas
IPC分类号： H01L2348
CPC分类号： H01L21/76843 , H01L21/288 , H01L21/2885 , H01L21/76807 , H01L21/76832 , H01L21/76835 , H01L21/76849 , H01L21/7685 , H01L21/76864 , H01L21/76877 , H01L23/5283 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： The present invention includes an embodiment that relates to method of forming an interconnect. The method includes the effect of reducing electromigration in a metallization. An article achieved by the inventive method includes a first interconnect disposed above a substrate; a first conductive diffusion barrier layer disposed above and on the first interconnect; an upper interconnect, that is either landed or unlanded and that is disposed above the first interconnect; and an upper conductive diffusion barrier layer disposed above and on the upper interconnect.
摘要翻译：本发明包括涉及形成互连的方法的实施例。该方法包括在金属化中减少电迁移的效果。通过本发明方法实现的制品包括：设置在基板上方的第一互连; 第一导电扩散阻挡层，设置在第一互连上方和第一互连上; 上部互连，其被落地或未上覆并且被布置在第一互连之上; 以及设置在上互连上方和上部互连上的上导电扩散阻挡层。

14. 发明授权

US06843852B2 Apparatus and method for electroless spray deposition 失效
标题翻译：无电喷雾沉积的装置和方法
公开(公告)号：US06843852B2
公开(公告)日：2005-01-18
申请号：US10046218
申请日：2002-01-16
申请人： Valery M. Dubin , Vincent R. Caillouette , Christopher D. Thomas , Chin-Chang Cheng
发明人： Valery M. Dubin , Vincent R. Caillouette , Christopher D. Thomas , Chin-Chang Cheng
IPC分类号： C23C4/12 , C23C18/16 , B05C5/02
CPC分类号： C23C18/1676 , C23C4/123 , C23C18/1614 , C23C18/1628 , C23C18/1692
摘要： An apparatus for electroless spray deposition of a metal layer on a substrate, e.g., a Co shunt or barrier layer on a Cu layer on a semiconductor wafer, includes a processing chamber to hold the substrate, the processing chamber including at least one section movable between an open position to allow the substrate to be introduced into and removed from the processing chamber and a closed position to seal the processing chamber to allow for pressurization of the processing chamber. The processing chamber has an inlet to provide pressurizing gas, an exhaust line to exhaust pressurizing gas, a pressure regulator to regulate pressure there-within, and a sprayer to spray an electroless plating solution onto the substrate. A method for electroless spray deposition includes providing the in a processing chamber, sealing the processing chamber, pressurizing the processing chamber, regulating the pressure, and spraying an electroless plating solution onto the substrate.
摘要翻译：一种金属层在衬底上无电喷涂沉积的装置，例如在半导体晶片上的Cu层上的分流或阻挡层，包括一个用于保持衬底的处理室，该处理室包括至少一个可在打开位置以允许衬底被引入和移出处理室，并且封闭位置以密封处理室以允许处理室的加压。处理室具有用于提供加压气体的入口，用于排放加压气体的排气管线，用于调节其内部的压力的压力调节器和喷雾器以将化学镀溶液喷射到基板上。无电喷雾沉积的方法包括在处理室中设置密封处理室，加压处理室，调节压力，以及将化学镀溶液喷涂到基板上。

15. 发明授权

US4722590A Jointing armoured submarine cables 失效
标题翻译：联接铠装海底电缆
公开(公告)号：US4722590A
公开(公告)日：1988-02-02
申请号：US594881
申请日：1984-03-21
申请人： Christopher D. Thomas
发明人： Christopher D. Thomas
IPC分类号： G02B6/24 , G02B6/44 , G02B6/46 , H02G15/08 , H02G15/14 , H02G15/18 , H02G15/192
CPC分类号： G02B6/4448 , H02G15/14 , H02G15/192
摘要： A termination for the armour (11) of an armoured submarine cable at a repeater housing comprises concentric sleeves (12, 13) which are swaged together to grip the armour (11) there between. The termination can be mounted in an adjustable position relative to a connector tube (15) which forms part of the repeater housing. The invention has particular application in jointing armoured optical fibre submarine cables.
摘要翻译：在中继器壳体处的铠装海底电缆的装甲（11）的端接件包括同心的套筒（12,13），它们一起锻压以在其间夹持铠装（11）。终端可以相对于形成中继器壳体的一部分的连接管（15）安装在可调节的位置。本发明特别适用于连接铠装光纤海缆。

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