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11. 发明申请

US20070196984A1 Nonvolatile memory device, layer deposition apparatus and method of fabricating a nonvolatile memory device using the same 审中-公开
标题翻译：非挥发性存储器件，层淀积设备和使用其的非易失性存储器件的制造方法
公开(公告)号：US20070196984A1
公开(公告)日：2007-08-23
申请号：US11655191
申请日：2007-01-19
申请人： Jung-hyun Lee , Sang-bong Bang , Sang-jun Choi , Bum-seok Seo , Chang-soo Lee
发明人： Jung-hyun Lee , Sang-bong Bang , Sang-jun Choi , Bum-seok Seo , Chang-soo Lee
IPC分类号： H01L21/336
CPC分类号： C23C14/46 , C23C14/0052 , C23C14/08 , H01L27/2436 , H01L45/04 , H01L45/1233 , H01L45/146 , H01L45/1625 , H01L45/1675
摘要： Provided are a nonvolatile memory device, a layer deposition apparatus and a method of fabricating a nonvolatile memory device using the same. The apparatus may include a chamber capable of holding a substrate, a particle-discharging target discharging particles toward the substrate, and a first ion beam gun accelerating a first plurality of ions and irradiating the accelerated ions toward the substrate. The method of fabricating a nonvolatile memory device may include discharging particles from a target toward a substrate, accelerating and irradiating a first plurality of ions toward the substrate, forming a reaction product by reacting the discharged particles and the accelerated and irradiated first plurality of ions, and forming a data storage layer having a deposited layer on the substrate. The nonvolatile memory device may include a data storage layer including a transition metal oxide layer formed by reacting discharged transition metal particles and accelerated and irradiated oxygen ions.
摘要翻译：提供一种非易失性存储器件，层淀积设备和使用其的非易失性存储器件的制造方法。该装置可以包括能够保持基板的室，向基板排出颗粒的颗粒排放目标，以及加速第一多个离子并将加速离子朝向基板照射的第一离子束枪。制造非易失性存储器件的方法可以包括将靶从靶向衬底排放，加速和照射第一多个离子朝向衬底，通过使排出的微粒和加速和照射的第一多个离子反应形成反应产物，以及在所述基板上形成具有沉积层的数据存储层。非易失性存储装置可以包括数据存储层，该数据存储层包括通过使放电的过渡金属颗粒和加速和照射的氧离子反应而形成的过渡金属氧化物层。

12. 发明申请

US20060138393A1 Ge precursor, GST thin layer formed using the same, phase-change memory device including the GST thin layer, and method of manufacturing the GST thin layer 有权
标题翻译： Ge前体，使用相同的GST薄层，包括GST薄层的相变存储器件，以及制造GST薄层的方法
公开(公告)号：US20060138393A1
公开(公告)日：2006-06-29
申请号：US11253693
申请日：2005-10-20
申请人： Bum-seok Seo , Jung-hyun Lee
发明人： Bum-seok Seo , Jung-hyun Lee
IPC分类号： H01L29/02
CPC分类号： H01L27/2436 , C07F7/10 , C07F7/30 , C23C16/305 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1616
摘要： Provided are a Ge precursor for low temperature deposition containing Ge, N, and Si, a GST thin layer doped with N and Si formed using the same, a memory device including the GST thin layer doped with N and Si, and a method of manufacturing the GST thin layer. The Ge precursor for low temperature deposition contains N and Si such that the temperature at which the Ge precursor is deposited to form a thin layer, particularly, the GST thin layer doped with N and Si, can be low. In addition, during the low temperature deposition, H2 plasma can be used. The GST phase-change layer doped with N and Si formed from the Ge precursor for low temperature deposition has a low reset current. Therefore, a memory device including the GST phase-change layer doped with N and Si can be highly integrated, have a high capacity, and can be operated at a high speed.
摘要翻译：提供了包含Ge，N和Si的低温沉积的Ge前体，掺杂有使用其形成的N和Si的GST薄层，包括掺杂有N和Si的GST薄层的存储器件，以及制造方法 GST薄层。用于低温沉积的Ge前体包含N和Si，使得Ge前体沉积形成薄层的温度，特别是掺杂有N和Si的GST薄层的温度可以低。此外，在低温沉积期间，可以使用H 2 O 3等离子体。掺杂有由Ge前体形成的用于低温沉积的N和Si的GST相变层具有低复位电流。因此，包含掺杂有N和Si的GST相变层的存储器件可以高度集成，具有高容量，并且可以高速运行。

13. 发明授权

US07518007B2 Ge precursor, GST thin layer formed using the same, phase-change memory device including the GST thin layer, and method of manufacturing the GST thin layer 有权
标题翻译： Ge前体，使用相同的GST薄层，包括GST薄层的相变存储器件，以及制造GST薄层的方法
公开(公告)号：US07518007B2
公开(公告)日：2009-04-14
申请号：US11253693
申请日：2005-10-20
申请人： Bum-seok Seo , Jung-hyun Lee
发明人： Bum-seok Seo , Jung-hyun Lee
IPC分类号： C07F7/08 , C07F7/00 , C23C16/00
CPC分类号： H01L27/2436 , C07F7/10 , C07F7/30 , C23C16/305 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1616
摘要： Provided are a Ge precursor for low temperature deposition containing Ge, N, and Si, a GST thin layer doped with N and Si formed using the same, a memory device including the GST thin layer doped with N and Si, and a method of manufacturing the GST thin layer. The Ge precursor for low temperature deposition contains N and Si such that the temperature at which the Ge precursor is deposited to form a thin layer, particularly, the GST thin layer doped with N and Si, can be low. In addition, during the low temperature deposition, H2 plasma can be used. The GST phase-change layer doped with N and Si formed from the Ge precursor for low temperature deposition has a low reset current. Therefore, a memory device including the GST phase-change layer doped with N and Si can be highly integrated, have a high capacity, and can be operated at a high speed.
摘要翻译：提供了包含Ge，N和Si的低温沉积的Ge前体，掺杂有使用其形成的N和Si的GST薄层，包括掺杂有N和Si的GST薄层的存储器件，以及制造方法 GST薄层。用于低温沉积的Ge前体包含N和Si，使得Ge前体沉积形成薄层的温度，特别是掺杂有N和Si的GST薄层的温度可以低。此外，在低温沉积期间，可以使用H 2等离子体。掺杂有由Ge前体形成的用于低温沉积的N和Si的GST相变层具有低复位电流。因此，包含掺杂有N和Si的GST相变层的存储器件可以高度集成，具有高容量，并且可以高速运行。

14. 发明申请

US20070297091A1 Patterned magnetic recording medium and method of manufacturing the same 审中-公开
标题翻译：图案化磁记录介质及其制造方法
公开(公告)号：US20070297091A1
公开(公告)日：2007-12-27
申请号：US11700077
申请日：2007-01-31
申请人： Sang-jun Choi , Jung-hyun Lee , Hoon-sang Oh , Bum-seok Seo
发明人： Sang-jun Choi , Jung-hyun Lee , Hoon-sang Oh , Bum-seok Seo
IPC分类号： G11B23/00
CPC分类号： G11B5/82 , B82Y10/00 , G11B5/642 , G11B5/74 , G11B5/743 , G11B5/855
摘要： A patterned magnetic recording medium and a method of manufacturing the same are provided. The patterned magnetic recording medium includes a plate, a plurality of nanowires formed vertically on the plate, and a magnetic layer patterned on the nanowires. The magnetic layer protrudes in areas corresponding to the nanowires.
摘要翻译：提供了图案化的磁记录介质及其制造方法。图案化的磁记录介质包括板，垂直于板上形成的多个纳米线以及在纳米线上图案化的磁性层。磁性层在对应于纳米线的区域中突出。

15. 发明申请

US20060040445A1 Capacitor having a dielectric layer that reduces leakage current and a method of manufacturing the same 有权
标题翻译：具有减小漏电流的电介质层的电容器及其制造方法
公开(公告)号：US20060040445A1
公开(公告)日：2006-02-23
申请号：US11207740
申请日：2005-08-22
申请人： Jung-hyun Lee , Sung-ho Park , Bum-seok Seo
发明人： Jung-hyun Lee , Sung-ho Park , Bum-seok Seo
IPC分类号： H01L21/8242
CPC分类号： H01L28/65 , H01L28/40
摘要： A capacitor having a dielectric layer including a composite oxide, the composite oxide including a transition metal and including a lanthanide group element, a memory device including the same and a method of manufacturing the capacitor are provided. The transition metal may be titanium and the composite oxide may be nitrided. The method may include providing a precursor of a transition metal, providing a precursor of a lanthanide group element, and forming a composite oxide on the lower electrode by oxidizing both the precursor of the transition metal and the precursor of the lanthanide group element, the composite oxide containing the transition metal and the lanthanide group element.
摘要翻译：提供具有包括复合氧化物的电介质层的电容器，包含过渡金属并且包括镧系元素元素的复合氧化物，包括其的存储装置和制造电容器的方法。过渡金属可以是钛，并且复合氧化物可以被氮化。该方法可以包括提供过渡金属的前体，提供镧系元素元素的前体，以及通过氧化过渡金属的前体和镧系元素前体的复合氧化物，形成复合氧化物，复合材料含有过渡金属和镧系元素的氧化物。

16. 发明申请

US20050082595A1 Capacitor of a semiconductor device and memory device using the same 失效
标题翻译：半导体器件的电容器和使用其的存储器件
公开(公告)号：US20050082595A1
公开(公告)日：2005-04-21
申请号：US10917532
申请日：2004-08-13
申请人： Jung-hyun Lee , Bum-seok Seo
发明人： Jung-hyun Lee , Bum-seok Seo
IPC分类号： H01L27/04 , H01L21/02 , H01L21/316 , H01L21/822 , H01L21/8242 , H01L27/00 , H01L27/105 , H01L27/108 , H01L29/76
CPC分类号： H01L28/56 , H01L21/31604 , H01L21/31616 , H01L21/31645 , H01L21/31691
摘要： A capacitor of a semiconductor device includes a lower electrode, a dielectric layer, including a plurality of band gaps, formed on the lower electrode, and an upper electrode formed on the dielectric layer. A band gap of the plurality of band gaps in the dielectric layer that is not adjacent to either the lower electrode or the upper electrode is smaller than a band gap of the plurality of band gaps in the dielectric layer adjacent to the lower electrode and a band gap of the plurality of band gaps in the dielectric layer adjacent to the upper electrode.
摘要翻译：半导体器件的电容器包括形成在下电极上的下电极，包括多个带隙的电介质层和形成在电介质层上的上电极。电介质层中与下电极或上电极不相邻的多个带隙的带隙小于与下电极相邻的电介质层中的多个带隙的带隙，带电介质层中与上电极相邻的多个带隙的间隙。

17. 发明授权

US07834206B2 Organic-metal precursor material and method of manufacturing metal thin film using the same 有权
标题翻译：有机金属前体材料及使用其制造金属薄膜的方法
公开(公告)号：US07834206B2
公开(公告)日：2010-11-16
申请号：US12555399
申请日：2009-09-08
申请人： Jung-hyun Lee , Bum-seok Seo
发明人： Jung-hyun Lee , Bum-seok Seo
IPC分类号： C07F15/00
CPC分类号： C07F15/0053
摘要： Provided are an organic-metal precursor material that can be readily decomposed without reacting with an oxidant, a method of manufacturing a metal thin film using the organic-metal precursor material, and a metal thin film prepared using the organic-metal precursor material. The organic-metal precursor material is an organic molecule having lone-pair electrons selected from the group consisting of ether, amine, tetrahydrofuran (THF), a phosphine group, and a phosphite group, and has a structure of covalent coordination bond.
摘要翻译：提供一种有机金属前体材料，其可以在不与氧化剂反应的情况下容易地分解，使用有机金属前体材料制造金属薄膜的方法，以及使用有机金属前体材料制备的金属薄膜。有机 - 金属前体材料是具有选自醚，胺，四氢呋喃（THF），膦基和亚磷酸酯基的单对电子的有机分子，并且具有共价配位键的结构。

18. 发明授权

US07601392B2 Organic-metal precursor material and method of manufacturing metal thin film using the same 有权
标题翻译：有机金属前体材料及使用其制造金属薄膜的方法
公开(公告)号：US07601392B2
公开(公告)日：2009-10-13
申请号：US11513999
申请日：2006-08-31
申请人： Jung-hyun Lee , Bum-seok Seo
发明人： Jung-hyun Lee , Bum-seok Seo
IPC分类号： C07F15/00
CPC分类号： C07F15/0053
摘要： Provided are an organic-metal precursor material that can be readily decomposed without reacting with an oxidant, a method of manufacturing a metal thin film using the organic-metal precursor material, and a metal thin film prepared using the organic-metal precursor material. The organic-metal precursor material is an organic molecule having lone-pair electrons selected from the group consisting of ether, amine, tetrahydrofuran (THF), a phosphine group, and a phosphite group, and has a structure of covalent coordination bond.
摘要翻译：提供一种有机金属前体材料，其可以在不与氧化剂反应的情况下容易地分解，使用有机金属前体材料制造金属薄膜的方法，以及使用有机金属前体材料制备的金属薄膜。有机 - 金属前体材料是具有选自醚，胺，四氢呋喃（THF），膦基和亚磷酸酯基的单对电子的有机分子，并且具有共价配位键的结构。

19. 发明授权

US07507958B2 Conductive carbon nanotube tip, probe having the conductive carbon nanotube tip, and method of manufacturing the conductive carbon nanotube tip 有权
标题翻译：导电性碳纳米管尖端，具有导电性碳纳米管尖端的探针，以及导电性碳纳米管尖端的制造方法
公开(公告)号：US07507958B2
公开(公告)日：2009-03-24
申请号：US11513197
申请日：2006-08-31
申请人： Sang-jun Choi , Jung-hyun Lee , Sang-bong Bang , Bum-seok Seo , Chang-soo Lee
发明人： Sang-jun Choi , Jung-hyun Lee , Sang-bong Bang , Bum-seok Seo , Chang-soo Lee
IPC分类号： G01N23/00
CPC分类号： G01Q70/12 , G01Q70/14 , Y10S977/876 , Y10S977/879
摘要： A conductive carbon nanotube tip and a manufacturing method thereof are provided. The conductive carbon nanotube tip includes a carbon nanotube tip substantially vertically placed on a substrate, and a ruthenium coating layer covering a surface of the carbon nanotube tip and extending to at least a part of the substrate. The manufacturing method includes substantially vertically placing a carbon nanotube tip on a substrate, and forming a ruthenium coating layer on the carbon nanotube tip and at least a part of the substrate.
摘要翻译：提供导电性碳纳米管尖端及其制造方法。导电性碳纳米管尖端包括基本上垂直放置在基板上的碳纳米管尖端和覆盖碳纳米管尖端的表面并延伸到基板的至少一部分的钌涂层。制造方法包括将碳纳米管尖端基本上垂直放置在基板上，并且在碳纳米管尖端和基板的至少一部分上形成钌涂层。

20. 发明申请

US20080182037A1 Method of forming metal layer 审中-公开
标题翻译：金属层形成方法
公开(公告)号：US20080182037A1
公开(公告)日：2008-07-31
申请号：US11902842
申请日：2007-09-26
申请人： Bum-seok Seo , Jung-hyun Lee
发明人： Bum-seok Seo , Jung-hyun Lee
IPC分类号： C23C16/06
CPC分类号： C23C16/45542 , C23C16/18
摘要： Provided is a method of forming a metal layer. The method may include supplying a first source gas into a reaction chamber containing a substrate, purging the first source gas by supplying a first purging gas into the reaction chamber, supplying a first reactive gas containing nitrogen into the reaction chamber, and purging reaction byproducts generated by the first reactive gas by supplying a second purging gas into the reaction chamber. A plasma of the first reactive gas is formed on the substrate by applying a first RF power to the substrate when the first reactive gas is supplied to form a first metal layer.
摘要翻译：提供一种形成金属层的方法。该方法可以包括将第一源气体供应到包含基底的反应室中，通过向反应室中供应第一吹扫气体来清洗第一源气体，向反应室供应含氮的第一反应气体，并且产生反应副产物通过将第二吹扫气体供应到反应室中的第一反应气体。当提供第一反应气体以形成第一金属层时，通过向衬底施加第一RF功率，在衬底上形成第一反应气体的等离子体。

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