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11. 发明授权

US07339205B2 Gallium nitride materials and methods associated with the same 有权
公开(公告)号：US07339205B2
公开(公告)日：2008-03-04
申请号：US10879703
申请日：2004-06-28
申请人： Edwin Lanier Piner , John C. Roberts , Pradeep Rajagopal
发明人： Edwin Lanier Piner , John C. Roberts , Pradeep Rajagopal
IPC分类号： H01L31/00
CPC分类号： H01L29/7787 , H01L21/0237 , H01L21/02378 , H01L21/02381 , H01L21/02458 , H01L21/02488 , H01L21/02505 , H01L21/02513 , H01L21/0254 , H01L21/02543 , H01L29/2003 , H01L29/432
摘要： Semiconductor materials including a gallium nitride material region and methods associated with such structures are provided. The semiconductor structures include a strain-absorbing layer formed within the structure. The strain-absorbing layer may be formed between the substrate (e.g., a silicon substrate) and an overlying layer. It may be preferable for the strain-absorbing layer to be very thin, have an amorphous structure and be formed of a silicon nitride-based material. The strain-absorbing layer may reduce the number of misfit dislocations formed in the overlying layer (e.g., a nitride-based material layer) which limits formation of other types of defects in other overlying layers (e.g., gallium nitride material region), amongst other advantages. Thus, the presence of the strain-absorbing layer may improve the quality of the gallium nitride material region which can lead to improved device performance.

12. 发明授权

US07297787B2 Process for preparing N6 substituted aminopurine ribofuranose nucleosides 失效
标题翻译：制备N6取代氨基嘌呤核糖呋喃核糖核苷的方法
公开(公告)号：US07297787B2
公开(公告)日：2007-11-20
申请号：US10471682
申请日：2002-03-19
申请人： Malcolm Berry , John C. Roberts , Shiping Xie
发明人： Malcolm Berry , John C. Roberts , Shiping Xie
IPC分类号： C07H19/167
CPC分类号： C07H19/16
摘要： An improved process for preparing N6 -substituted aminopurine ribofuranose nucleosides. Compounds of this type are known to be usefull in the prepartation of compounds having activitity at adenosine receptors, e.g. Adenosine A1 receptor. The process comprises the step of reacting a 6-halopurine ribofuranose nucleoside with an amine in the presence of CaCO3 , wherein acid is added to the reaction mixture.
摘要翻译：制备N6-取代氨基嘌呤核糖核苷的改进方法。已知这种化合物在用于腺苷受体活性的化合物的预分离中是有用的。腺苷A1受体。该方法包括在CaCO 3存在下使6-卤代嘌呤核糖核苷与胺反应的步骤，其中向反应混合物中加入酸。

13. 发明授权

US07135720B2 Gallium nitride material transistors and methods associated with the same 有权
公开(公告)号：US07135720B2
公开(公告)日：2006-11-14
申请号：US10913297
申请日：2004-08-05
申请人： Walter H. Nagy , Ricardo M. Borges , Jeffrey D. Brown , Apurva D. Chaudhari , James W. Cook, Jr. , Allen W. Hanson , Jerry W. Johnson , Kevin J. Linthicum , Edwin L. Piner , Pradeep Rajagopal , John C. Roberts , Sameer Singhal , Robert J. Therrien , Andrei Vescan
发明人： Walter H. Nagy , Ricardo M. Borges , Jeffrey D. Brown , Apurva D. Chaudhari , James W. Cook, Jr. , Allen W. Hanson , Jerry W. Johnson , Kevin J. Linthicum , Edwin L. Piner , Pradeep Rajagopal , John C. Roberts , Sameer Singhal , Robert J. Therrien , Andrei Vescan
IPC分类号： H01L31/072
CPC分类号： H01L29/812 , H01L29/2003 , H01L29/7787
摘要： Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit the majority of the output signal within a specific transmission channel (defined in terms of frequency), while minimizing transmission in adjacent channels. This ability gives the transistors excellent linearity which results in high signal quality and limits errors in transmitted data. The transistors may be designed to achieve low ACPR values (a measure of excellent linearity), while still operating at high drain efficiencies and/or high output powers. Such properties enable the transistors to be used in RF power applications including third generation (3G) power applications based on W-CDMA modulation.

14. 发明授权

US06588680B2 Spray device for irrigation 失效
公开(公告)号：US06588680B2
公开(公告)日：2003-07-08
申请号：US09916480
申请日：2001-07-27
申请人： Scott G. Cameron , John C. Roberts
发明人： Scott G. Cameron , John C. Roberts
IPC分类号： A62C3122
CPC分类号： B05B1/267 , A01G25/02 , B05B15/622 , Y02A40/237
摘要： An irrigation spray device has a substantially cylindrical peg for insertion into a water supply tube. A longitudinal water supply groove extends along the peg, with a water deflecting plate at one end of the groove for deflecting water traveling downwardly along the groove into an outwardly directed spray. The water deflecting plate has a smooth, convex curved or part-conical shape for forming a smooth, continuous, cone-shaped spray. The supply groove may be U-shaped for improved uniformity.

15. 外观设计

USD455055S1 Flow channel for drip irrigation with central cavity 失效
标题翻译：中心滴灌流道
公开(公告)号：USD455055S1
公开(公告)日：2002-04-02
申请号：US29132853
申请日：2000-11-16
申请人： John C. Roberts , Jack Butler
设计人： John C. Roberts , Jack Butler

16. 发明授权

US4575786A Radiation emitting apparatus 失效
标题翻译：辐射发射装置
公开(公告)号：US4575786A
公开(公告)日：1986-03-11
申请号：US484361
申请日：1983-04-12
申请人： John C. Roberts
发明人： John C. Roberts
IPC分类号： F21S8/00 , F21V7/00
CPC分类号： F21V7/005 , F21S8/00 , F21V11/12 , F21V14/08 , F21W2111/00 , F21W2111/06 , F21Y2103/00
摘要： A modulated optical radiation beacon, e.g. a flashing light beacon or an IR emmissive missile jamming source, can comprise a radiation source and two relatively movable apertured masks which, as the apertures thereof move into and out of registration, pass or block the radiation from the source. Herein, to improve the uniformity of the polar distribution of the emitted radiation (assuming, of course, that a uniform distribution is required) or, in other cases, simply to improve efficiency, the apertures of the `inner` mask, i.e. the one nearest the source, are bounded by curved reflective surfaces defining an optical cavity which at least crudely images the source at a position near the outer mask. Advantageously, the optical cavities are defined by a spaced array of prismatic members having appropriately curved facing surfaces.
摘要翻译：调制的光辐射信标，例如。闪光灯具或IR发射导弹干扰源可以包括辐射源和两个相对可移动的有孔掩模，当其孔径移入和移出配准时，通过或阻挡来自源的辐射。在这里，为了提高发射辐射的极性分布的均匀性（当然，假设需要均匀分布），或者在其他情况下简单地提高效率，“内”掩模的孔，即一个最靠近源极，由限定光腔的弯曲反射表面限定，该光腔至少在靠近外掩模的位置处粗略地成像源。有利地，光学空腔由具有适当弯曲的面对表面的棱镜构件的间隔开的阵列限定。

17. 发明授权

US08748298B2 Gallium nitride materials and methods associated with the same 有权
标题翻译：氮化镓材料和方法相关
公开(公告)号：US08748298B2
公开(公告)日：2014-06-10
申请号：US12023451
申请日：2008-01-31
申请人： Edwin L. Piner , John C. Roberts , Pradeep Rajagopal
发明人： Edwin L. Piner , John C. Roberts , Pradeep Rajagopal
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： H01L29/7787 , H01L21/0237 , H01L21/02378 , H01L21/02381 , H01L21/02458 , H01L21/02488 , H01L21/02505 , H01L21/02513 , H01L21/0254 , H01L21/02543 , H01L29/2003 , H01L29/432
摘要： Semiconductor materials including a gallium nitride material region and methods associated with such structures are provided. The semiconductor structures include a strain-absorbing layer formed within the structure. The strain-absorbing layer may be formed between the substrate (e.g., a silicon substrate) and an overlying layer. It may be preferable for the strain-absorbing layer to be very thin, have an amorphous structure and be formed of a silicon nitride-based material. The strain-absorbing layer may reduce the number of misfit dislocations formed in the overlying layer (e.g., a nitride-based material layer) which limits formation of other types of defects in other overlying layers (e.g., gallium nitride material region), amongst other advantages. Thus, the presence of the strain-absorbing layer may improve the quality of the gallium nitride material region which can lead to improved device performance.
摘要翻译：提供了包括氮化镓材料区域的半导体材料和与这种结构相关联的方法。半导体结构包括在该结构内形成的应变吸收层。应变吸收层可以形成在衬底（例如，硅衬底）和上覆层之间。应变吸收层非常薄，具有非晶结构并且由氮化硅基材料形成可能是优选的。应变吸收层可以减少在上层（例如，氮化物基材料层）中形成的失配位错的数量，其限制在其它覆盖层（例如，氮化镓材料区域）中形成其他类型的缺陷，其他优点。因此，应变吸收层的存在可以提高氮化镓材料区域的质量，这可以导致改进的器件性能。

18. 发明授权

US07994540B2 Gallium nitride material transistors and methods associated with the same 有权
标题翻译：氮化镓材料晶体管和与之相关的方法
公开(公告)号：US07994540B2
公开(公告)日：2011-08-09
申请号：US12508871
申请日：2009-07-24
申请人： Walter H. Nagy , Ricardo M. Borges , Jeffrey D. Brown , Apurva D. Chaudhari , James W. Cook, Jr. , Allen W. Hanson , Jerry W. Johnson , Kevin J. Linthicum , Edwin L. Piner , Pradeep Rajagopal , John C. Roberts , Sameer Singhal , Robert J. Therrien , Andrei Vescan
发明人： Walter H. Nagy , Ricardo M. Borges , Jeffrey D. Brown , Apurva D. Chaudhari , James W. Cook, Jr. , Allen W. Hanson , Jerry W. Johnson , Kevin J. Linthicum , Edwin L. Piner , Pradeep Rajagopal , John C. Roberts , Sameer Singhal , Robert J. Therrien , Andrei Vescan
IPC分类号： H01L31/0328
CPC分类号： H01L29/812 , H01L29/2003 , H01L29/7787
摘要： Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit the majority of the output signal within a specific transmission channel (defined in terms of frequency), while minimizing transmission in adjacent channels. This ability gives the transistors excellent linearity which results in high signal quality and limits errors in transmitted data. The transistors may be designed to achieve low ACPR values (a measure of excellent linearity), while still operating at high drain efficiencies and/or high output powers. Such properties enable the transistors to be used in RF power applications including third generation (3G) power applications based on W-CDMA modulation.
摘要翻译：提供了氮化镓材料晶体管和与之相关的方法。晶体管可以通过放大输入信号来产生具有增加的功率的输出信号在功率应用中使用。晶体管可以设计成在特定传输信道（以频率定义）的情况下传输大部分输出信号，同时最小化相邻信道中的传输。这种能力使晶体管具有良好的线性度，导致高信号质量并限制了传输数据中的误差。晶体管可以设计成实现低ACPR值（优良线性度量），同时仍然以高漏电效率和/或高输出功率工作。这种特性使晶体管能够用于包括基于W-CDMA调制的第三代（3G）功率应用的射频功率应用中。

19. 发明申请

US20090267188A1 GALLIUM NITRIDE MATERIAL PROCESSING AND RELATED DEVICE STRUCTURES 有权
标题翻译：氮化铝材料加工和相关设备结构
公开(公告)号：US20090267188A1
公开(公告)日：2009-10-29
申请号：US12143727
申请日：2008-06-20
申请人： Edwin L. Piner , Jerry W. Johnson , John C. Roberts
发明人： Edwin L. Piner , Jerry W. Johnson , John C. Roberts
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L29/7787 , H01L21/02381 , H01L21/02458 , H01L21/0251 , H01L21/0254 , H01L21/02658 , H01L21/02664 , H01L29/2003 , H01L29/66462 , H01L33/007 , H01L33/0079 , H01S5/32341
摘要： Gallium nitride material devices and related processes are described. In some embodiments, an N-face of the gallium nitride material region is exposed by removing an underlying region.
摘要翻译：描述了氮化镓材料器件和相关工艺。在一些实施例中，通过去除下面的区域来暴露氮化镓材料区域的N面。

20. 发明授权

US07365374B2 Gallium nitride material structures including substrates and methods associated with the same 有权
标题翻译：氮化镓材料结构，包括与其相关的衬底和方法
公开(公告)号：US07365374B2
公开(公告)日：2008-04-29
申请号：US11121793
申请日：2005-05-03
申请人： Edwin L. Piner , Pradeep Rajagopal , John C. Roberts , Kevin J. Linthicum
发明人： Edwin L. Piner , Pradeep Rajagopal , John C. Roberts , Kevin J. Linthicum
IPC分类号： H01L31/0328
CPC分类号： H01L21/0254 , H01L21/0237 , H01L21/02381 , H01L21/02458 , H01L21/02488 , H01L21/02513 , H01L29/2003 , H01L29/267 , H01L29/66462 , H01L29/7783
摘要： Gallium nitride material-based semiconductor structures are provided. In some embodiments, the structures include a composite substrate over which a gallium nitride material region is formed. The gallium nitride material structures may include additional features, such as strain-absorbing layers and/or transition layers, which also promote favorable stress conditions. The reduction in stresses may reduce defect formation and cracking in the gallium nitride material region, as well as reducing warpage of the overall structure. The gallium nitride material-based semiconductor structures may be used in a variety of applications such as transistors (e.g. FETs) Schottky diodes, light emitting diodes, laser diodes, SAW devices, and sensors, amongst others devices.
摘要翻译：提供了氮化镓材料基半导体结构。在一些实施例中，结构包括复合衬底，氮化镓材料区域形成在复合衬底上。氮化镓材料结构可以包括另外的特征，例如应变吸收层和/或过渡层，其也促进有利的应力条件。应力的降低可以减少氮化镓材料区域中的缺陷形成和开裂，同时减少整个结构的翘曲。氮化镓材料基半导体结构可用于诸如晶体管（例如FET）肖特基二极管，发光二极管，激光二极管，SAW器件和传感器等各种应用中。

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