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11. 发明申请

US20070190681A1 Silicon-on-insulator near infrared active pixel sensor array 审中-公开
标题翻译：绝缘体上的近红外有源像素传感器阵列
公开(公告)号：US20070190681A1
公开(公告)日：2007-08-16
申请号：US11352724
申请日：2006-02-13
申请人： Jong-Jan Lee , Jer-Shen Maa , Douglas Tweet , Sheng Hsu
发明人： Jong-Jan Lee , Jer-Shen Maa , Douglas Tweet , Sheng Hsu
IPC分类号： H01L21/00
CPC分类号： H01L27/14649 , H01L27/14609 , H01L27/14689
摘要： A method is provided for forming a near infrared (NIR) active pixel sensor array on a silicon-on-insulator (SOI) substrate. The method forms a first wafer comprising a high resistance first Si substrate and a moderately doped first Si layer, and forms a second wafer comprising a first silicon oxide layer and a second Si layer. The method bonds the first wafer to the second wafer, forming a SOI substrate. Then, a diode is formed with a p-n junction space charge region extending into the first Si substrate. A thin-film transistor (TFT) is formed in the second Si layer, and interconnects are formed between the TFT and the diode. For example, first Si substrate may have a resistivity of greater than 100 ohm-cm, and the first Si layer may have a dopant concentration in the range of about 1×1016 to about 5×1018 cm−3.
摘要翻译：提供了一种用于在绝缘体上硅（SOI）衬底上形成近红外（NIR）有源像素传感器阵列的方法。该方法形成包括高电阻第一Si衬底和中度掺杂的第一Si层的第一晶片，并且形成包括第一氧化硅层和第二Si层的第二晶片。该方法将第一晶片连接到第二晶片，形成SOI衬底。然后，形成具有延伸到第一Si衬底中的p-n结空间电荷区域的二极管。在第二Si层中形成薄膜晶体管（TFT），并且在TFT和二极管之间形成互连。例如，第一Si衬底可以具有大于100欧姆 - 厘米的电阻率，并且第一Si层可以具有在约1×10 16至约5×10 18范围内的掺杂剂浓度， / SUP> cm 3 -3。

12. 发明申请

US20070099329A1 Method of fabricating a germanium photo detector on a high quality germanium epitaxial overgrowth layer 有权
标题翻译：在高质量锗外延生长层上制造锗光电探测器的方法
公开(公告)号：US20070099329A1
公开(公告)日：2007-05-03
申请号：US11260955
申请日：2005-10-27
申请人： Jer-Shen Maa , Jong-Jan Lee , Sheng Hsu , Douglas Tweet
发明人： Jer-Shen Maa , Jong-Jan Lee , Sheng Hsu , Douglas Tweet
IPC分类号： H01L21/00
CPC分类号： H01L31/1808 , H01L21/02532 , H01L21/02576 , H01L21/02647 , H01L31/105 , Y02E10/50
摘要： A method of fabricating a germanium photo detector includes preparing a silicon substrate; depositing and planarizing a silicon oxide layer; forming contact holes in the silicon oxide layer which communicate with the underlying silicon substrate; growing an epitaxial germanium layer of a first type on the silicon oxide layer and in the contact holes; growing an intrinsic germanium layer on the epitaxial germanium layer and any exposed silicon oxide layer; growing a germanium layer of a second type on the intrinsic germanium layer and any exposed silicon oxide layer; depositing a layer of covering material take from the group of materials consisting of polysilicon, polysilicon-germanium and In2O3—SnO2; and etching the covering material to form individual sensing elements.
摘要翻译：制造锗光电检测器的方法包括制备硅衬底; 沉积和平坦化氧化硅层; 在氧化硅层中形成与底层硅衬底连通的接触孔; 在氧化硅层和接触孔中生长第一类型的外延锗层; 在外延锗层和任何暴露的氧化硅层上生长内在的锗层; 在内部锗层和任何暴露的氧化硅层上生长第二类型的锗层; 沉积一层覆盖材料取自由多晶硅，多晶硅 - 锗和In 2 N 3 O 3 -SnO 2 2组成的材料组。并蚀刻覆盖材料以形成单独的感测元件。

13. 发明申请

US20060194357A1 High-density germanium-on-insulator photodiode array 有权
标题翻译：高密度锗绝缘体上的光电二极管阵列
公开(公告)号：US20060194357A1
公开(公告)日：2006-08-31
申请号：US11240969
申请日：2005-09-30
申请人： Sheng Hsu , Jong-Jan Lee , Jer-Shen Maa , Douglas Tweet
发明人： Sheng Hsu , Jong-Jan Lee , Jer-Shen Maa , Douglas Tweet
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： H01L31/1126 , C30B19/00 , C30B29/08 , H01L21/02381 , H01L21/02488 , H01L21/02532 , H01L21/02623 , H01L21/02639 , H01L21/30625 , H01L21/7624 , H01L27/14683 , H01L27/14689 , H01L29/16 , H01L29/78 , H01L31/105 , H01L31/1804 , H01L31/1808 , Y02E10/547
摘要： A high-density Germanium (Ge)-on-Insulator (GOI) photodiode array and corresponding fabrication method are provided. The method includes: forming an array of pixel driver nMOST devices, each device having a gate connected to a row line in a first orientation, a first source/drain (S/D) region, and a second S/D region connected to Vdd; forming a P-I-N Ge diode for each pixel as follows: forming a n+ region; forming an intrinsic Ge region overlying the n+ region; forming a p+ junction in the intrinsic Ge; and, isolating the P-I-N Ge diodes; and, forming an Indium Tin oxide (ITO) column in a second orientation, about orthogonal to the first orientation, overlying the P-I-N Ge diodes.
摘要翻译：提供了高密度锗（Ge）绝缘体（GOI）光电二极管阵列和相应的制造方法。该方法包括：形成像素驱动器nMOST器件的阵列，每个器件具有以第一取向连接到行线的栅极，第一源极/漏极（S / D）区域和连接到Vdd的第二S / D区域 ; 如下形成每个像素的P-I-N Ge二极管：形成n +区; 形成覆盖n +区域的本征Ge区域; 在本征Ge中形成p +结; 并隔离P-I-N Ge二极管; 并且以与第一取向正交的第二取向形成铟锡氧化物（ITO）柱，覆盖P-I-N Ge二极管。

14. 发明申请

US20060110844A1 Fabrication of thin film germanium infrared sensor by bonding to silicon wafer 有权
标题翻译：通过粘合到硅晶片制造薄膜锗红外传感器
公开(公告)号：US20060110844A1
公开(公告)日：2006-05-25
申请号：US10993533
申请日：2004-11-19
申请人： Jong-Jan Lee , Jer-Shen Maa , Sheng Hsu , Douglas Tweet
发明人： Jong-Jan Lee , Jer-Shen Maa , Sheng Hsu , Douglas Tweet
IPC分类号： H01L21/00
CPC分类号： H01L31/1804 , H01L21/187 , H01L21/76254 , H01L27/1443 , H01L31/02327 , H01L31/105 , Y02E10/547 , Y02P70/521
摘要： A method of fabricating a thin film germanium photodetector includes preparing a silicon substrate; fabricating a CMOS device on the silicon substrate; preparing a germanium substrate; preparing surfaces of each substrate for bonding; bonding the germanium substrate to the CMOS-bearing silicon substrate to form a bonded structure; removing a portion of the germanium substrate from the bonded structure; forming a PIN diode in the germanium substrate; removing a portion of the germanium layer by etching; and completing the germanium photo detector.
摘要翻译：制造薄膜锗光电探测器的方法包括制备硅衬底; 在硅衬底上制造CMOS器件; 制备锗衬底; 准备每个基板的表面以进行接合; 将锗衬底结合到具有CMOS的硅衬底以形成结合结构; 从结合结构去除锗衬底的一部分; 在锗衬底中形成PIN二极管; 通过蚀刻去除锗层的一部分; 并完成锗光电检测器。

15. 发明申请

US20070259467A1 FABRICATION OF VERTICAL SIDEWALLS ON (110) SILICON SUBSTRATES FOR USE IN SI/SIGE PHOTODETECTORS 有权
标题翻译：用于SI / SIGE光电二极管的（110）硅基板上的垂直边的制造
公开(公告)号：US20070259467A1
公开(公告)日：2007-11-08
申请号：US11416985
申请日：2006-05-02
申请人： Douglas Tweet , Jong-Jan Lee , Jer-Shen Maa , Sheng Hsu
发明人： Douglas Tweet , Jong-Jan Lee , Jer-Shen Maa , Sheng Hsu
IPC分类号： H01L21/00
CPC分类号： H01L31/1812 , Y02E10/50
摘要： A method of fabricating vertical sidewalls on silicon (110) substrates for use in Si/SiGe photodetectors includes preparing a silicon (110) layer wherein the silicon (110) plane is parallel to an underlying silicon wafer surface. Masking the silicon (110) layer with mask sidewalls parallel to a silicon (111) layer plane and etching the silicon (110) layer to remove an un-masked portion thereof, leaving a patterned silicon (110) layer having vertical silicon (111) sidewalls. Removing the mask; growing SiGe-containing layers on the patterned silicon (110) layer; and fabricating a photodetector.
摘要翻译：在Si / SiGe光电探测器中使用的在硅（110）衬底上制造垂直侧壁的方法包括制备硅（110）层，其中硅（110）平面平行于下面的硅晶片表面。屏蔽具有平行于硅（111）层平面的掩模侧壁的硅（110）层并蚀刻硅（110）层以去除其未掩蔽部分，留下具有垂直硅（111）的图案化硅（110）层，侧壁取下面罩; 在图案化的硅（110）层上生长含SiGe的层; 并制造光电检测器。

16. 发明申请

US20070004067A1 Floating body germanium phototransistor with photo absorption threshold bias region 有权
标题翻译：具有光吸收阈值偏置区域的浮体锗光电晶体管
公开(公告)号：US20070004067A1
公开(公告)日：2007-01-04
申请号：US11261191
申请日：2005-10-28
申请人： Sheng Hsu , Jong-Jan Lee , Jer-Shen Maa , Douglas Tweet
发明人： Sheng Hsu , Jong-Jan Lee , Jer-Shen Maa , Douglas Tweet
IPC分类号： H01L31/00 , H01L21/00
CPC分类号： H01L31/1136
摘要： A floating body germanium (Ge) phototransistor with a photo absorption threshold bias region, and an associated fabrication process are presented. The method includes: providing a p-doped Silicon (Si) substrate; selectively forming an insulator layer overlying a first surface of the Si substrate; forming an epitaxial Ge layer overlying the insulator layer; forming a channel region in the Ge layer; forming a gate dielectric, gate electrode, and gate spacers; forming source/drain (S/D) regions in the Ge layer; and, forming a photo absorption threshold bias region in the Ge layer, adjacent the channel region. In one aspect, the second S/D region has a length, longer than the first S/D length. The photo absorption threshold bias region underlies the second S/D region. Alternately, the second S/D region is separated from the channel by an offset, and the photo absorption threshold bias region is the offset in the Ge layer, after a light p-doping.
摘要翻译：提出了具有光吸收阈值偏置区域的浮体锗（Ge）光电晶体管，以及相关的制造工艺。该方法包括：提供p掺杂硅（Si）衬底; 选择性地形成覆盖在所述Si衬底的第一表面上的绝缘体层; 形成覆盖绝缘体层的外延Ge层; 在Ge层中形成沟道区; 形成栅极电介质，栅电极和栅极间隔物; 在Ge层中形成源极/漏极（S / D）区域; 并且在Ge层中形成邻近沟道区的光吸收阈值偏置区域。在一个方面，第二S / D区域具有比第一S / D长度更长的长度。光吸收阈值偏置区域位于第二S / D区域的下方。或者，第二S / D区域与沟道分离偏移，光吸收阈值偏置区域是在光p掺杂之后的Ge层中的偏移。

17. 发明申请

US20060160291A1 Integration of biaxial tensile strained NMOS and uniaxial compressive strained PMOS on the same wafer 有权
标题翻译：将双轴拉伸应变NMOS和单轴压应变PMOS集成在同一晶圆上
公开(公告)号：US20060160291A1
公开(公告)日：2006-07-20
申请号：US11039542
申请日：2005-01-19
申请人： Jong-Jan Lee , Jer-Shen Maa , Douglas Tweet , Sheng Hsu
发明人： Jong-Jan Lee , Jer-Shen Maa , Douglas Tweet , Sheng Hsu
IPC分类号： H01L21/8238
CPC分类号： H01L29/7842 , H01L21/76254 , H01L21/823807 , H01L21/823814 , H01L21/823828 , H01L21/84 , H01L27/1203
摘要： A method of fabricating a biaxial tensile strained layer for NMOS fabrication and a uniaxial compressive strained layer for PMOS fabrication on a single wafer for use in CMOS ICs, includes preparing a silicon substrate for CMOS fabrication; depositing, patterning and etching a first and second insulating layers; removing a portion of the second insulating layer from a PMOS active area; depositing a layer of epitaxial silicon on the PMOS active area; removing a portion of the second insulating layer from an NMOS active area; growing an epitaxial silicon layer and growing an epitaxial SiGe layer on the NMOS active area; implanting H2+ ions; annealing the wafer to relax the SiGe layer; removing the remaining second insulating layer from the wafer; growing a layer of silicon; finishing a gate module; depositing a layer of SiO2 to cover the NMOS wafer; etching silicon in the PMOS active area; selectively growing a SiGe layer on the PMOS active area; wherein the silicon layer in the NMOS active area is under biaxial tensile strain, and the silicon layer in the PMOS active area is uniaxial compressive strained; and completing the CMOS device.
摘要翻译：制造用于NMOS制造的双轴拉伸应变层的方法和用于CMOS IC的单个晶片上的用于PMOS制造的单轴压缩应变层包括制备用于CMOS制造的硅衬底; 沉积，图案化和蚀刻第一和第二绝缘层; 从PMOS有源区域去除所述第二绝缘层的一部分; 在PMOS有源区上沉积一层外延硅; 从NMOS有源区域去除所述第二绝缘层的一部分; 生长外延硅层并在NMOS有源区上生长外延SiGe层; 注入H 2 O 2 + + / - +离子; 退火晶片以松弛SiGe层; 从晶片上去除剩余的第二绝缘层; 生长一层硅; 完成门模块; 沉积SiO 2层以覆盖NMOS晶片; 蚀刻PMOS有源区中的硅; 在PMOS有源区上选择性地生长SiGe层; 其中所述NMOS有源区中的硅层处于双轴拉伸应变下，并且所述PMOS有源区中的硅层是单轴压缩应变的; 并完成CMOS设备。

18. 发明申请

US20060030124A1 Method of fabricating single-layer and multi-layer single crystalline silicon and silicon devices on plastic using sacrificial glass 有权
标题翻译：使用牺牲玻璃在塑料上制造单层和多层单晶硅和硅器件的方法
公开(公告)号：US20060030124A1
公开(公告)日：2006-02-09
申请号：US10913677
申请日：2004-08-05
申请人： Jer-Shen Maa , Jong-Jan Lee , Douglas Tweet , Sheng Hsu
发明人： Jer-Shen Maa , Jong-Jan Lee , Douglas Tweet , Sheng Hsu
IPC分类号： H01L21/30 , H01L21/20
CPC分类号： H01L21/26506 , H01L21/187 , H01L21/6835 , H01L2221/6835 , H01L2221/68368 , Y10S438/977
摘要： A method of fabricating a silicon-on-plastic layer via layer transfer includes depositing a layer of SiGe on a silicon substrate; depositing a layer of silicon; implanting splitting hydrogen ions into the silicon substrate; bonding a glass substrate to the silicon layer; splitting the wafer; removing the silicon layer and a portion of the SiGe layer; depositing a dielectric on the silicon side of the silicon-on-glass wafer; applying adhesive and bonding a plastic substrate to the silicon side of the silicon-on-glass wafer; removing the glass from the glass side of the bonded, silicon-on-glass wafer to form a silicon-on-plastic wafer; and completing a desired IC device on the silicon-on-plastic. Multi-level structure may be fabricated according to the method of the invention by repeating the last few steps of the method of the invention.
摘要翻译：通过层转移制造硅塑料层的方法包括在硅衬底上沉积SiGe层; 沉积一层硅; 将氢离子注入到硅衬底中; 将玻璃基板结合到硅层; 分裂晶片; 去除所述硅层和所述SiGe层的一部分; 在玻璃上硅晶片的硅侧沉积电介质; 施加粘合剂并将塑料基板粘合到硅玻璃晶片的硅侧; 从接合的硅玻璃晶片的玻璃面上移除玻璃以形成硅 - 硅晶片; 并在塑料硅胶上完成所需的IC器件。可以通过重复本发明方法的最后几个步骤，根据本发明的方法制造多层结构。

19. 发明申请

US20050153474A1 Vertical optical path structure for infrared photodetection 有权
标题翻译：用于红外光电检测的垂直光路结构
公开(公告)号：US20050153474A1
公开(公告)日：2005-07-14
申请号：US10755567
申请日：2004-01-12
申请人： Douglas Tweet , Jong-Jan Lee , Jer-Shen Maa , Sheng Hsu
发明人： Douglas Tweet , Jong-Jan Lee , Jer-Shen Maa , Sheng Hsu
IPC分类号： G01J5/20 , H01L21/00 , H01L21/20 , H01L27/146 , H01L29/165 , H01L31/028 , H01L31/0352 , H01L31/10 , H01L31/109 , H01L31/18
CPC分类号： H01L31/105 , H01L21/02381 , H01L21/0243 , H01L21/0245 , H01L21/02532 , H01L21/02639 , H01L27/14627 , H01L27/14643 , H01L31/02327 , H01L31/028 , H01L31/035281 , H01L31/108 , H01L31/109 , H01L31/1812 , Y02E10/547
摘要： Provided are a SiGe vertical optical path and a method for selectively forming a SiGe optical path normal structure for IR photodetection. The method comprises: forming a Si substrate surface; forming a Si feature, normal with respect to the Si substrate surface, such as a trench, via, or pillar; and, selectively forming a SiGe optical path overlying the Si normal feature. In some aspects, the Si substrate surface is formed a first plane and the Si normal feature has walls (sidewalls), normal with respect to the Si substrate surface, and a surface in a second plane, parallel to the first plane. Then, selectively forming a SiGe optical path overlying the Si normal feature includes forming a SiGe vertical optical path overlying the normal feature walls.
摘要翻译：提供了SiGe垂直光路和用于选择性地形成用于IR光电检测的SiGe光路法线结构的方法。该方法包括：形成Si衬底表面; 形成Si特征，相对于诸如沟槽，通孔或支柱的Si衬底表面是正常的; 并且选择性地形成覆盖Si正常特征的SiGe光路。在一些方面，Si衬底表面形成第一平面，并且Si正常特征具有相对于Si衬底表面法线的壁（侧壁）和平行于第一平面的第二平面中的表面。然后，选择性地形成覆盖Si正常特征的SiGe光路包括形成覆盖正常特征壁的SiGe垂直光路。

20. 发明申请

US20070298588A1 Transfer method for forming a silicon-on-plastic wafer 失效
标题翻译：用于形成硅塑料晶片的转移方法
公开(公告)号：US20070298588A1
公开(公告)日：2007-12-27
申请号：US11891502
申请日：2007-08-10
申请人： Jer-Shen Maa , Jong-Jan Lee , Douglas Tweet , Sheng Hsu
发明人： Jer-Shen Maa , Jong-Jan Lee , Douglas Tweet , Sheng Hsu
IPC分类号： H01L21/301
CPC分类号： H01L21/26506 , H01L21/187 , H01L21/6835 , H01L2221/6835 , H01L2221/68368 , Y10S438/977
摘要： A method of fabricating a silicon-on-plastic layer via layer transfer includes depositing a layer of SiGe on a silicon substrate; depositing a layer of silicon; implanting splitting hydrogen ions into the silicon substrate; bonding a glass substrate to the silicon layer; splitting the wafer; removing the silicon layer and a portion of the SiGe layer; depositing a dielectric on the silicon side of the silicon-on-glass wafer; applying adhesive and bonding a plastic substrate to the silicon side of the silicon-on-glass wafer; removing the glass from the glass side of the bonded, silicon-on-glass wafer to form a silicon-on-plastic wafer; and completing a desired IC device on the silicon-on-plastic. Multi-level structure may be fabricated according to the method of the invention by repeating the last few steps of the method of the invention.
摘要翻译：通过层转移制造硅塑料层的方法包括在硅衬底上沉积SiGe层; 沉积一层硅; 将氢离子注入到硅衬底中; 将玻璃基板结合到硅层; 分裂晶片; 去除所述硅层和所述SiGe层的一部分; 在玻璃上硅晶片的硅侧沉积电介质; 施加粘合剂并将塑料基板粘合到硅玻璃晶片的硅侧; 从接合的硅玻璃晶片的玻璃面上移除玻璃以形成硅 - 硅晶片; 并在塑料硅胶上完成所需的IC器件。可以通过重复本发明方法的最后几个步骤，根据本发明的方法制造多层结构。

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