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11. 发明申请

US20120248941A1 STACKED BULK ACCOUSTIC RESONATOR AND METHOD OF FABRICATING THE SAME 有权
标题翻译：堆叠式散热器共振器及其制造方法
公开(公告)号：US20120248941A1
公开(公告)日：2012-10-04
申请号：US13074094
申请日：2011-03-29
申请人： Alexandre Augusto Shirakawa , Paul Bradley , Dariusz Burak , Stefan Bader , Chris Feng
发明人： Alexandre Augusto Shirakawa , Paul Bradley , Dariusz Burak , Stefan Bader , Chris Feng
IPC分类号： H03H9/17 , H01L41/047
CPC分类号： H03H3/02 , H03H9/132 , H03H9/585 , H03H2003/0428
摘要： A stacked bulk acoustic resonator includes a first piezoelectric layer stacked on a first electrode, a second electrode stacked on the first piezoelectric layer; a second piezoelectric layer stacked on the second electrode, and a third electrode stacked on the second piezoelectric layer. The stacked bulk acoustic resonator includes further includes an inner raised region formed in an inner portion on a surface of at least one of the first, second and third electrodes, and an outer raised region formed along an outer perimeter on the surface of the at least one of the first, second or third electrodes. The outer raised region surrounds the inner raised region and defines a gap between the inner raised region and the outer raised region.
摘要翻译：层叠的体声波谐振器包括堆叠在第一电极上的第一压电层，堆叠在第一压电层上的第二电极; 堆叠在第二电极上的第二压电层和堆叠在第二压电层上的第三电极。所述层叠的体声波谐振器还包括形成在所述第一，第二和第三电极中的至少一个的表面上的内部部分中的内部凸起区域，以及沿所述至少一个表面上的外周边形成的外部凸起区域第一，第二或第三电极之一。外部凸起区域围绕内部凸起区域并且在内部升高区域和外部凸起区域之间限定间隙。

12. 发明授权

US09203374B2 Film bulk acoustic resonator comprising a bridge 有权
标题翻译：包括桥的膜体声波谐振器
公开(公告)号：US09203374B2
公开(公告)日：2015-12-01
申请号：US13151631
申请日：2011-06-02
申请人： Dariusz Burak , Phil Nikkel , Chris Feng , Alexandre Shirakawa , John Choy
发明人： Dariusz Burak , Phil Nikkel , Chris Feng , Alexandre Shirakawa , John Choy
IPC分类号： H03H9/15 , H03H9/13 , H03H9/02 , H03H9/17 , H03H3/04
CPC分类号： H03H9/132 , H03H3/04 , H03H9/02007 , H03H9/02086 , H03H9/173 , H03H9/175
摘要： A film bulk acoustic resonator (FBAR) structure includes a first electrode disposed over a substrate, a piezoelectric layer disposed over the first electrode, and a second electrode disposed over the first piezoelectric layer. A bridge is disposed between the first electrode and the piezoelectric layer.
摘要翻译：薄膜体声波谐振器（FBAR）结构包括设置在基板上的第一电极，设置在第一电极上的压电层和设置在第一压电层上的第二电极。桥接器设置在第一电极和压电层之间。

13. 发明申请

US20100327994A1 ACOUSTIC RESONATOR STRUCTURE HAVING AN ELECTRODE WITH A CANTILEVERED PORTION 有权
标题翻译：具有可拆卸部分的电极的声学谐振器结构
公开(公告)号：US20100327994A1
公开(公告)日：2010-12-30
申请号：US12626035
申请日：2009-11-25
申请人： John Choy , Chris Feng , Phil Nikkel
发明人： John Choy , Chris Feng , Phil Nikkel
IPC分类号： H03H9/54 , H01L41/047 , H01L41/08
CPC分类号： H03H9/173 , H03H9/02086 , H03H9/02118 , H03H9/02149 , H03H9/132 , H03H9/171 , H03H9/177
摘要： An acoustic resonator comprises a first electrode and second electrode comprising a plurality of sides. At least one of the sides of the second electrode comprises a cantilevered portion. A piezoelectric layer is disposed between the first and second electrodes. An electrical filter comprises an acoustic resonator.
摘要翻译：声谐振器包括第一电极和包括多个侧面的第二电极。第二电极的至少一个侧面包括悬臂部分。压电层设置在第一和第二电极之间。电滤波器包括声谐振器。

14. 发明授权

US09847768B2 Polarity determining seed layer and method of fabricating piezoelectric materials with specific C-axis 有权
公开(公告)号：US09847768B2
公开(公告)日：2017-12-19
申请号：US12623746
申请日：2009-11-23
申请人： Kevin Grannen , Chris Feng , John Choy
发明人： Kevin Grannen , Chris Feng , John Choy
IPC分类号： H03H9/02 , C30B23/02 , C30B25/02 , C30B29/40
CPC分类号： H03H9/02015 , C30B23/02 , C30B25/02 , C30B29/406 , Y10T29/42
摘要： An acoustic resonator comprises a first electrode, a second electrode and a piezoelectric layer disposed between the first electrode and the second electrode, and comprising a C-axis having an orientation. A polarization-determining seed layer (PDSL) is disposed beneath the piezoelectric layer, the seed layer comprising a metal-nonmetal compound. A method of fabricating a piezoelectric layer over a substrate comprises forming a first layer of a polarization determining seed layer (PDSL) over the substrate. The method further comprises forming a second layer of the PDSL over the first layer. The method further comprises forming a first layer of a piezoelectric material over the second layer of the PDSL; and forming a second layer of the piezoelectric material over the first layer of the piezoelectric material. The piezoelectric material comprises a compression axis (C-axis) oriented along a first direction.

15. 发明授权

US09148117B2 Coupled resonator filter comprising a bridge and frame elements 有权
标题翻译：耦合谐振滤波器，包括桥接元件和框架元件
公开(公告)号：US09148117B2
公开(公告)日：2015-09-29
申请号：US13167939
申请日：2011-06-24
申请人： Dariusz Burak , Alexandre Shirakawa , Chris Feng , Phil Nikkel , Stefan Bader
发明人： Dariusz Burak , Alexandre Shirakawa , Chris Feng , Phil Nikkel , Stefan Bader
IPC分类号： H03H9/54 , H03H9/02 , H03H3/04 , H03H9/13 , H03H9/58
CPC分类号： H03H9/0211 , H03H3/04 , H03H9/02007 , H03H9/132 , H03H9/584 , H03H9/587 , H03H9/589
摘要： In accordance with a representative embodiment, a bulk acoustic wave (BAW) resonator structure, comprises: a first BAW resonator comprising a first lower electrode, a first upper electrode and a first piezoelectric layer disposed between the first lower electrode and the first upper electrode; a second BAW resonator comprising a second lower electrode, a second upper electrode and a second piezoelectric layer disposed between the second lower electrode and the second upper electrode; an acoustic coupling layer disposed between the first BAW resonator and the second BAW resonator; and a bridge disposed between the first lower electrode of the first BAW resonator and the second upper electrode of the second BAW resonator. An inner raised region or an outer raised region, or both are disposed over the second upper electrode.
摘要翻译：根据代表性实施例，体声波（BAW）谐振器结构包括：第一BAW谐振器，包括第一下电极，第一上电极和设置在第一下电极和第一上电极之间的第一压电层; 第二BAW谐振器，包括设置在所述第二下电极和所述第二上电极之间的第二下电极，第二上电极和第二压电层; 设置在第一BAW谐振器和第二BAW谐振器之间的声耦合层; 以及布置在第一BAW谐振器的第一下电极和第二BAW谐振器的第二上电极之间的桥。内部凸起区域或外部凸起区域或两者均设置在第二上部电极上。

16. 发明授权

US08896395B2 Accoustic resonator having multiple lateral features 有权
标题翻译：具有多个横向特征的声谐振器
公开(公告)号：US08896395B2
公开(公告)日：2014-11-25
申请号：US13232334
申请日：2011-09-14
申请人： Dariusz Burak , Phil Nikkel , Chris Feng
发明人： Dariusz Burak , Phil Nikkel , Chris Feng
IPC分类号： H03H9/00 , H03H9/13 , H03H9/17 , H03H9/02 , H03H9/15
CPC分类号： H03H9/132 , H03H9/02086 , H03H9/131 , H03H9/173
摘要： A thin film bulk acoustic resonator (FBAR) includes a first electrode stacked on a substrate over a cavity, a piezoelectric layer stacked on the first electrode, and a second electrode stacked on the piezoelectric layer. Multiple lateral features are formed on a surface of the second electrode, the lateral features including multiple stepped structures.
摘要翻译：薄膜体声波谐振器（FBAR）包括堆叠在空腔上的衬底上的第一电极，堆叠在第一电极上的压电层和堆叠在压电层上的第二电极。多个横向特征形成在第二电极的表面上，横向特征包括多个阶梯结构。

17. 发明申请

US20130063227A1 ACCOUSTIC RESONATOR HAVING MULTIPLE LATERAL FEATURES 有权
标题翻译：具有多个横向特征的共振共振器
公开(公告)号：US20130063227A1
公开(公告)日：2013-03-14
申请号：US13232334
申请日：2011-09-14
申请人： Dariusz Burak , Phil Nikkel , Chris Feng
发明人： Dariusz Burak , Phil Nikkel , Chris Feng
IPC分类号： H03H9/54
CPC分类号： H03H9/132 , H03H9/02086 , H03H9/131 , H03H9/173
摘要： A thin film bulk acoustic resonator (FBAR) includes a first electrode stacked on a substrate over a cavity, a piezoelectric layer stacked on the first electrode, and a second electrode stacked on the piezoelectric layer. Multiple lateral features are formed on a surface of the second electrode, the lateral features including multiple stepped structures.
摘要翻译：薄膜体声波谐振器（FBAR）包括堆叠在空腔上的衬底上的第一电极，堆叠在第一电极上的压电层和堆叠在压电层上的第二电极。多个横向特征形成在第二电极的表面上，横向特征包括多个阶梯结构。

18. 发明授权

US08248185B2 Acoustic resonator structure comprising a bridge 有权
标题翻译：包括桥梁的声谐振器结构
公开(公告)号：US08248185B2
公开(公告)日：2012-08-21
申请号：US12490525
申请日：2009-06-24
申请人： John Choy , Chris Feng , Phil Nikkel
发明人： John Choy , Chris Feng , Phil Nikkel
IPC分类号： H03H9/15 , H03H9/13 , H03H9/52 , H03H9/54
CPC分类号： H03H9/02149 , H03H9/02118 , H03H9/132 , H03H9/173
摘要： An acoustic resonator comprises a first electrode a second electrode and a piezoelectric layer disposed between the first and second electrodes. The acoustic resonator further comprises a reflective element disposed beneath the first electrode, the second electrode and the piezoelectric layer. An overlap of the reflective element, the first electrode, the second electrode and the piezoelectric layer comprises an active area of the acoustic resonator. The acoustic resonator also comprises a bridge adjacent to a termination of the active area of the acoustic resonator.
摘要翻译：声谐振器包括第一电极，第二电极和设置在第一和第二电极之间的压电层。声谐振器还包括设置在第一电极，第二电极和压电层下方的反射元件。反射元件，第一电极，第二电极和压电层的重叠包括声谐振器的有效区域。声谐振器还包括与声谐振器的有源区域的终端相邻的桥。

19. 发明申请

US20110121689A1 POLARITY DETERMINING SEED LAYER AND METHOD OF FABRICATING PIEZOELECTRIC MATERIALS WITH SPECIFIC C-AXIS 有权
标题翻译：极性测定种子层和制备具有特定C轴的压电材料的方法
公开(公告)号：US20110121689A1
公开(公告)日：2011-05-26
申请号：US12623746
申请日：2009-11-23
申请人： Kevin Grannen , Chris Feng , John Choy
发明人： Kevin Grannen , Chris Feng , John Choy
IPC分类号： H01L41/04 , H01L41/22
CPC分类号： H03H9/02015 , C30B23/02 , C30B25/02 , C30B29/406 , Y10T29/42
摘要： An acoustic resonator comprises a first electrode, a second electrode and a piezoelectric layer disposed between the first electrode and the second electrode, and comprising a C-axis having an orientation. A polarization-determining seed layer (PDSL) is disposed beneath the piezoelectric layer, the seed layer comprising a metal-nonmetal compound. A method of fabricating a piezoelectric layer over a substrate comprises forming a first layer of a polarization determining seed layer (PDSL) over the substrate. The method further comprises forming a second layer of the PDSL over the first layer. The method further comprises forming a first layer of a piezoelectric material over the second layer of the PDSL; and forming a second layer of the piezoelectric material over the first layer of the piezoelectric material. The piezoelectric material comprises a compression axis (C-axis) oriented along a first direction.
摘要翻译：声谐振器包括第一电极，第二电极和设置在第一电极和第二电极之间的压电层，并且包括具有取向的C轴。偏振确定种子层（PDSL）设置在压电层下方，种子层包含金属 - 非金属化合物。在衬底上制造压电层的方法包括在衬底上形成偏振确定种子层（PDSL）的第一层。该方法还包括在第一层上形成PDSL的第二层。该方法还包括在PDSL的第二层上形成压电材料的第一层; 以及在所述压电材料的所述第一层上形成所述压电材料的第二层。压电材料包括沿着第一方向取向的压缩轴线（C轴）。

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