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11. 发明授权

US06887776B2 Methods to form metal lines using selective electrochemical deposition 失效
标题翻译：使用选择性电化学沉积形成金属线的方法
公开(公告)号：US06887776B2
公开(公告)日：2005-05-03
申请号：US10412620
申请日：2003-04-11
申请人： Quanyuan Shang , John M. White , Robert Z. Bachrach , Kam S. Law
发明人： Quanyuan Shang , John M. White , Robert Z. Bachrach , Kam S. Law
IPC分类号： H01L21/336 , H01L29/423 , H01L29/49 , H01L29/786 , H01L21/44
CPC分类号： H01L29/78696 , H01L29/42384 , H01L29/4908 , H01L29/66757 , H01L29/66765
摘要： Methods are provided for forming a transistor for use in an active matrix liquid crystal display (AMLCD). In one aspect a method is provided for processing a substrate including providing a glass substrate, depositing a conductive seed layer on a surface of the glass substrate, depositing a resist material on the conductive seed layer, patterning the resist layer to expose portions of the conductive seed layer, and depositing a metal layer on the exposed portions of the conductive seed layer by an electrochemical technique.
摘要翻译：提供了用于形成用于有源矩阵液晶显示器（AMLCD）的晶体管的方法。在一个方面，提供了一种处理衬底的方法，包括提供玻璃衬底，在玻璃衬底的表面上沉积导电种子层，在导电种子层上沉积抗蚀剂材料，图案化抗蚀剂层以暴露部分导电种子层，以及通过电化学技术在导电种子层的暴露部分上沉积金属层。

12. 发明授权

US5871811A Method for protecting against deposition on a selected region of a substrate 失效
标题翻译：防止沉积在基底的选定区域上的方法
公开(公告)号：US5871811A
公开(公告)日：1999-02-16
申请号：US477536
申请日：1995-06-07
申请人： David Nin-Kou Wang , John M. White , Kam S. Law , Cissy Leung , Salvador P. Umotoy , Kenneth S. Collins , John A. Adamik , Ilya Perlov , Dan Maydan
发明人： David Nin-Kou Wang , John M. White , Kam S. Law , Cissy Leung , Salvador P. Umotoy , Kenneth S. Collins , John A. Adamik , Ilya Perlov , Dan Maydan
IPC分类号： C23C16/04 , C23C16/40 , C23C16/44 , C23C16/455 , C23C16/509 , C23C16/54 , H01L21/314 , H01L21/316 , C23C16/00
CPC分类号： C23C16/45565 , C23C16/402 , C23C16/455 , C23C16/45521 , C23C16/5096 , C23C16/54 , H01J37/32082 , H01J37/3244 , H01L21/31604
摘要： A method for protecting a selected area of a substrate against deposition on the selected area. The method includes the steps of flowing a process gas into a substrate processing chamber and flowing a purge gas to the selected area of the substrate to prevent the process gas from contacting the selected area or minimize contact between the process gas and the selected area. In various embodiments the selected area is a backside periphery of the substrate or the edge of the substrate. Also in these embodiments, the process gas is flowed into a deposition zone in order to deposit a thin film layer over an upper surface of the substrate, and a flow of the process and purge gas is established such that the process gas flows radically across the upper surface of the substrate, combines with the purge gas near an edge of the substrate and exits the processing chamber through an exhaust system.
摘要翻译：一种用于保护衬底的选定区域以防止沉积在所选区域上的方法。该方法包括以下步骤：将工艺气体流入衬底处理室并将吹扫气体流动到衬底的选定区域，以防止工艺气体接触选定区域或最小化工艺气体与所选区域之间的接触。在各种实施例中，所选择的区域是衬底的背面周边或衬底的边缘。同样在这些实施方案中，工艺气体流入沉积区，以便在衬底的上表面上沉积薄膜层，并建立工艺和吹扫气体的流动，使得工艺气体基本上流过基板的上表面与基板边缘附近的吹扫气体结合，并通过排气系统离开处理室。

13. 发明授权

US5755886A Apparatus for preventing deposition gases from contacting a selected region of a substrate during deposition processing 失效
标题翻译：用于在沉积处理期间防止沉积气体接触衬底的选定区域的装置
公开(公告)号：US5755886A
公开(公告)日：1998-05-26
申请号：US483750
申请日：1995-06-07
申请人： David Nin-Kou Wang , John M. White , Kam S. Law , Cissy Leung , Salvador P. Umotoy , Kenneth S. Collins , John A. Adamik , Ilya Perlov , Dan Maydan
发明人： David Nin-Kou Wang , John M. White , Kam S. Law , Cissy Leung , Salvador P. Umotoy , Kenneth S. Collins , John A. Adamik , Ilya Perlov , Dan Maydan
IPC分类号： C23C16/04 , C23C16/40 , C23C16/44 , C23C16/455 , C23C16/509 , C23C16/54 , H01L21/314 , H01L21/316 , C23C16/00
CPC分类号： C23C16/45565 , C23C16/402 , C23C16/455 , C23C16/45521 , C23C16/5096 , C23C16/54 , H01J37/32082 , H01J37/3244 , H01L21/31604
摘要： A substrate processing reactor capable of thermal CVD, plasma-enhanced CVD, plasma-assisted etchback, plasma self-cleaning and other substrate processing operations all of which can either be performed separately or as part of in-situ multiple step processing. The reactor incorporates a uniform radial gas pumping system which enables uniform reactant gas flow across the wafer. Also included are upper and lower purge gas dispersers. The upper purge gas disperser directs purge gas flow downwardly toward the periphery of the wafer while the lower gas disperser directs purge gas across the backside of the wafer. The radial pumping gas system and purge gas dispersers sweep radially away from the wafer to prevent deposition external to the wafer and keep the chamber clean.
摘要翻译：能够进行热CVD，等离子体增强CVD，等离子体辅助回蚀，等离子体自清洁和其它基板处理操作的基板处理反应器，所有这些都可以单独进行或作为原位多步骤处理的一部分进行。该反应器包含均匀的径向气体泵送系统，其能够跨过晶片均匀的反应气体流动。还包括上部和下部吹扫气体分散器。上部吹扫气体分散器将吹扫气体向下流向晶片的周边，而下部气体分散器引导吹扫气体穿过晶片的背面。径向泵送气体系统和吹扫气体分散器径向扫掠离开晶片，以防止晶片外部沉积并保持室清洁。

14. 发明授权

US5366585A Method and apparatus for protection of conductive surfaces in a plasma processing reactor 失效
标题翻译：用于保护等离子体处理反应器中的导电表面的方法和装置
公开(公告)号：US5366585A
公开(公告)日：1994-11-22
申请号：US10975
申请日：1993-01-28
申请人： Robert Robertson , Kam S. Law , John M. White
发明人： Robert Robertson , Kam S. Law , John M. White
IPC分类号： B01J19/08 , C23C16/44 , C23C16/509 , C30B25/08 , H01J37/02 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/31 , B44C1/22
CPC分类号： H01J37/32495 , C23C16/4404 , C23C16/4405 , C23C16/5096 , H01J37/026 , H01J2237/0206 , H01J2237/022 , Y10S156/914 , Y10S156/916
摘要： An apparatus and method for protecting conductive, typically metallic, walls (212) of a plasma process chamber (200) from accumulation of contaminants thereon and from reaction with a gas plasma and either deposition-gas plasma by-products. A ceramic barrier material (220-223), preferably of at least 0.005 inches 127 micrometers) thickness, is used adjacent the conductive portions of the reactor chamber and between the gas plasma and such conductive portions to be protected. The ceramic barrier material reduces the deposit of compounds formed from the plasma on protected reactor chamber surfaces and thereby avoiding the formation of a source of particulates. Further, the ceramic barrier material enables cleaning of the reactor chamber using an etch plasma generated from halogen-comprising gas without the etch plasma attacking protected metallic portions of the reactor. The ceramic liner can serve an additional function of preventing arcing or local intense plasma discharge from a plasma-generation electrode (216), to a conductive portion of the reactor chamber.
摘要翻译：一种用于保护等离子体处理室（200）的导电的，通常是金属的壁（212）的装置和方法，其不会积聚污染物并且与气体等离子体和沉积气体等离子体副产物反应。邻近反应器室的导电部分和气体等离子体和待保护的导电部分之间使用陶瓷阻挡材料（220-223），优选至少0.005英寸127微米）。陶瓷阻挡材料减少了在受保护的反应器室表面上由等离子体形成的化合物的沉积，从而避免了颗粒物的形成。此外，陶瓷阻挡材料能够使用由含卤素气体产生的蚀刻等离子体来清洁反应室，而没有蚀刻等离子体侵蚀反应器的受保护的金属部分。陶瓷衬垫可以起到防止从等离子体产生电极（216）的电弧或局部强烈等离子体放电到反应器室的导电部分的附加功能。

15. 发明授权

US4892753A Process for PECVD of silicon oxide using TEOS decomposition 失效
公开(公告)号：US4892753A
公开(公告)日：1990-01-09
申请号：US262993
申请日：1988-10-26
申请人： David N. Wang , John M. White , Kam S. Law , Cissy Leung , Salvador P. Umotoy , Kenneth S. Collins , John A. Adamik , Ilya Perlov , Dan Maydan
发明人： David N. Wang , John M. White , Kam S. Law , Cissy Leung , Salvador P. Umotoy , Kenneth S. Collins , John A. Adamik , Ilya Perlov , Dan Maydan
IPC分类号： C23C16/40 , C23C16/44 , C23C16/455 , C23C16/509 , C23C16/54 , H01L21/314 , H01L21/316
CPC分类号： C23C16/45565 , C23C16/402 , C23C16/455 , C23C16/45521 , C23C16/5096 , C23C16/54 , H01J37/32082 , H01J37/3244 , H01L21/31604
摘要： A high pressure, high throughput, single wafer, semiconductor processing reactor is disclosed which is capable of thermal CVD, plasma-enhanced CVD, plasma-assisted etchback, plasma self-cleaning, and deposition topography modification by sputtering, either separately or as part of in-situ multiple step processing. The reactor includes cooperating arrays of interdigitated susceptor and wafer support fingers which collectively remove the wafer from a robot transfer blade and position the wafer with variable, controlled, close parallel spacing between the wafer and the chamber gas inlet manifold, then return the wafer to the blade. A combined RF/gas feed-through device protects against process gas leaks and applies RF energy to the gas inlet manifold without internal breakdown or deposition of the gas. The gas inlet manifold is adapted for providing uniform gas flow over the wafer. Temperature-controlled internal and external manifold surfaces suppress condensation, premature reactions and decomposition and deposition on the external surfaces. The reactor also incorporates a uniform radial pumping gas system which enables uniform reactant gas flow across the wafer and directs purge gas flow downwardly and upwardly toward the periphery of the wafer for sweeping exhaust gases radially away from the wafer to prevent deposition outside the wafer and keep the chamber clean. The reactor provides uniform processing over a wide range of pressures including very high pressures. A low temperature CVD process for forming a highly conformal layer of silicon dioxide is also disclosed. The process uses very high chamber pressure and low temperature, and TEOS and ozone reactants. The low temperature CVD silicon dioxide deposition step is particularly useful for planarizing underlying stepped dielectric layers, either alone or in conjunction with a subsequent isotropic etch. A preferred in-situ multiple-step process for forming a planarized silicon dioxide layer uses (1) high rate silicon dioxide deposition at a low temperature and high pressure followed by (2) the deposition of the conformal silicon dioxide layer also at high pressure and low temperature, followed by (3) a high rate isotropic etch, preferably at low temperature and high pressure in the same reactor used for the two oxide deposition steps. Various combinations of the steps are disclosed for different applications, as is a preferred reactor self-cleaning step.

16. 发明授权

US4872947A CVD of silicon oxide using TEOS decomposition and in-situ planarization process 失效
标题翻译：使用TEOS分解和原位平面化处理的氧化硅CVD
公开(公告)号：US4872947A
公开(公告)日：1989-10-10
申请号：US262992
申请日：1988-10-26
申请人： David N. Wang , John M. White , Kam S. Law , Cissy Leung , Salvador P. Umotoy , Kenneth S. Collins , John A. Adamik , Ilya Perlov , Dan Maydan
发明人： David N. Wang , John M. White , Kam S. Law , Cissy Leung , Salvador P. Umotoy , Kenneth S. Collins , John A. Adamik , Ilya Perlov , Dan Maydan
IPC分类号： C23C16/40 , C23C16/44 , C23C16/455 , C23C16/509 , C23C16/54 , H01L21/314 , H01L21/316
CPC分类号： C23C16/45565 , C23C16/402 , C23C16/455 , C23C16/45521 , C23C16/5096 , C23C16/54 , H01J37/32082 , H01J37/3244 , H01L21/31604
摘要： A high pressure, high throughput, single wafer, semiconductor processing reactor is disclosed which is capable of thermal CVD, plasma-enhanced CVD, plasma-assisted etchback, plasma self-cleaning, and deposition topography modification by sputtering, either separately or as part of in-situ multiple step processing. A low temperature CVD process for forming a highly conformal layer of silicon dioxide is also disclosed. The process uses very high chamber pressure and low temperature, and TEOS and ozone reactants. The low temperature CVD silicon dioxide deposition step is particularly useful for planarizing underlying stepped dielectric layers, either along or in conjunction with a subsequent isotropic etch. A preferred in-situ multiple-step process for forming a planarized silicon dioxide layer uses (1) high rate silicon dioxide deposition at a low temperature and high pressure followed by (2) the deposition of the conformal silicon dioxide layer also at high pressure and low temperature, followed by (3) a high rate isotropic etch, preferably at low temperature and high pressure in the same reactor used for the two oxide deposition steps. Various combinations of the steps are disclosed for different applications, as is a preferred reactor self-cleaning step.
摘要翻译：公开了一种高压，高通量，单晶片，半导体处理反应器，其能够通过溅射单独地或作为一部分的溅射进行热CVD，等离子体增强CVD，等离子体辅助回蚀，等离子体自清洁和沉积形貌修饰原位多步处理。还公开了用于形成高度保形二氧化硅层的低温CVD工艺。该过程使用非常高的室压和低温，以及TEOS和臭氧反应物。低温CVD二氧化硅沉积步骤特别可用于平坦化下面的阶梯介电层，或者沿着或结合随后的各向同性蚀刻。用于形成平坦化的二氧化硅层的优选的原位多步骤方法使用（1）在低温和高压下高速二氧化硅沉积，随后（2）也在高压下沉积保形二氧化硅层，以及低温，随后（3）高速各向同性蚀刻，优选在低温和高压下，在用于两个氧化物沉积步骤的相同反应器中。公开了用于不同应用的步骤的各种组合，优选的反应器自清洁步骤也是如此。

17. 发明授权

US06167834A Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process 失效
公开(公告)号：US06167834A
公开(公告)日：2001-01-02
申请号：US07928642
申请日：1992-08-13
申请人： David Nin-Kou Wang , John M. White , Kam S. Law , Cissy Leung , Salvador P. Umotoy , Kenneth S. Collins , John A. Adamik , Ilya Perlov , Dan Maydan
发明人： David Nin-Kou Wang , John M. White , Kam S. Law , Cissy Leung , Salvador P. Umotoy , Kenneth S. Collins , John A. Adamik , Ilya Perlov , Dan Maydan
IPC分类号： C23C1600
CPC分类号： C23C16/45565 , C23C16/402 , C23C16/455 , C23C16/45521 , C23C16/5096 , C23C16/54 , H01J37/32082 , H01J37/3244 , H01L21/31604
摘要： A high pressure, high throughput, single wafer, semiconductor processing reactor is disclosed which is capable of thermal CVD, plasma-enhanced CVD, plasma-assisted etchback, plasma self-cleaning, and deposition topography modification by sputtering, either separately or as part of in-situ multiple step processing. The reactor includes cooperating arrays of interdigitated susceptor and wafer support fingers which collectively remove the wafer from a robot transfer blade and position the wafer with variable, controlled, close parallel spacing between the wafer and the chamber gas inlet manifold, then return the wafer to the blade. A combined RF/gas feed-through device protects against process gas leaks and applies RF energy to the gas inlet manifold without internal breakdown or deposition of the gas. The gas inlet manifold is adapted for providing uniform gas flow over the wafer. Temperature-controlled internal and external manifold surfaces suppress condensation, premature reactions and decomposition and deposition on the external surfaces. The reactor also incorporates a uniform radial pumping gas system which enables uniform reactant gas flow across the wafer and directs purge gas flow downwardly and upwardly toward the periphery of the wafer for sweeping exhaust gases radially away from the wafer to prevent deposition outside the wafer and keep the chamber clean. The reactor provides uniform processing over a wide range of pressures including very high pressures. A low temperature CVD process for forming a highly conformal layer of silicon dioxide is also disclosed. The process uses very high chamber pressure and low temperature, the TEOS and ozone reactants. The low temperature CVD silicon dioxide deposition step is particularly useful for planarizing underlying stepped dielectric layers, either alone or in conjunction with a subsequent isotropic etch. A preferred in-situ multiple-step process for forming a planarized silicon dioxide layer uses (1) high rate silicon dioxide deposition at a low temperature and high pressure followed by (2) the deposition of the conformal silicon dioxide layer also at high pressure and low temperature, followed by (3) a high rate isotropic etch, preferably at low temperature and high pressure in the same reactor used for the two oxide deposition steps. Various combinations of the steps are disclosed for different applications, as is a preferred reactor self-cleaning step.

18. 发明授权

US5354715A Thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process 失效
标题翻译：二氧化硅的热化学气相沉积和原位多步平面化工艺
公开(公告)号：US5354715A
公开(公告)日：1994-10-11
申请号：US861719
申请日：1992-04-01
申请人： David N-K. Wang , John M. White , Kam S. Law , Cissy Leung , Salvador P. Umotoy , Kenneth S. Collins , John A. Adamik , Ilya Perlov , Dan Maydan
发明人： David N-K. Wang , John M. White , Kam S. Law , Cissy Leung , Salvador P. Umotoy , Kenneth S. Collins , John A. Adamik , Ilya Perlov , Dan Maydan
IPC分类号： C23C16/48 , C23C16/04 , C23C16/40 , C23C16/42 , C23C16/44 , C23C16/455 , C23C16/46 , C23C16/50 , C23C16/509 , C23C16/54 , C23F4/00 , C30B25/14 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/31 , H01L21/314 , H01L21/316 , H01L21/683 , H01L21/00 , H01L21/02
CPC分类号： C23C16/45565 , C23C16/402 , C23C16/455 , C23C16/45521 , C23C16/5096 , C23C16/54 , H01J37/32082 , H01J37/3244 , H01L21/31604
摘要： A high pressure, high throughout, single wafer semiconductor processing reactor is disclosed which is capable of thermal CVD, plasma-enhanced CVD, plasma-assisted etchback, plasma self-cleaning and deposition topography modification by sputtering, either separately or as part of in-situ multiple step processing. The reactor provides uniform processing over a wide range of pressures including very high pressures. A low temperature process for forming a highly conformal layer of silicon dioxide from a plasma of TEOS, oxygen and ozone is also disclosed. This layer can be planarized using an etchback process. Silicon oxide deposition and etchback can be carried out sequentially in the reactor.
摘要翻译：公开了一种高压，高整体的单晶片半导体处理反应器，其能够通过溅射单独地或作为部分的，通过溅射进行热CVD，等离子体增强CVD，等离子体辅助回蚀，等离子体自清洁和沉积形貌修饰，原位多步处理。该反应器在包括非常高的压力的宽范围的压力下提供均匀的加工。还公开了一种用于从TEOS，氧气和臭氧的等离子体形成高度保形二氧化硅层的低温工艺。该层可以使用回蚀工艺进行平面化。氧化硅沉积和回蚀可以在反应器中顺序进行。

19. 发明授权

US5607009A Method of heating and cooling large area substrates and apparatus therefor 失效
标题翻译：加热和冷却大面积基板的方法及其设备
公开(公告)号：US5607009A
公开(公告)日：1997-03-04
申请号：US10683
申请日：1993-01-28
申请人： Norman L. Turner , John M. White , David Berkstresser
发明人： Norman L. Turner , John M. White , David Berkstresser
IPC分类号： C03B25/02 , C03B32/00 , C03C17/00 , C03C17/245 , C23C14/54 , C23C14/56 , C23C16/46 , C23C16/54 , G09F9/30 , H01L21/00 , H01L21/673 , H01L21/677 , F25B29/00 , C23C14/58
CPC分类号： H01L21/67167 , C03C17/002 , C23C14/541 , C23C14/568 , C23C16/46 , C23C16/463 , C23C16/54 , H01L21/67109 , H01L21/67236 , H01L21/6734 , H01L21/67745 , Y10S414/137 , Y10S414/138
摘要： Glass substrates suitable for thin film processing can be batch heated to processing temperatures and batch cooled after processing by radiant heating and cooling in a vacuum chamber. The heating and/or cooling chamber is fitted with a cassette including heat conductive shelves that can be heated or cooled, interleaved by the glass substrates mounted on supports so that a gap exists between the shelves and the substrates. As the shelves provide heating or cooling, the glass substrates are radiantly heated or cooled by the shelves, thereby providing uniform heating or cooling of the glass substrates so as to avoid damage or warpage of the substrates.A vacuum system for processing the substrates includes batch-type heating and cooling of the substrates using the chambers of the invention in combination with one-at-a-time film processing chambers that can deposit one or more thin films on the substrates.
摘要翻译：适用于薄膜加工的玻璃基板可以通过在真空室中进行辐射加热和冷却而经加工处理之后被批量加热至加工温度并进行批量冷却。加热和/或冷却室装有一个盒子，它包括可被加热或冷却的导热架，由安装在支架上的玻璃基板交错，从而在搁架和基板之间存在间隙。当架子提供加热或冷却时，玻璃基板被搁板辐射加热或冷却，从而提供玻璃基板的均匀加热或冷却，以避免基板的损坏或翘曲。用于处理基板的真空系统包括使用本发明的室的基板的间歇式加热和冷却，以及可以在基板上沉积一个或多个薄膜的一个一次的膜处理室。

20. 发明授权

US5512320A Vacuum processing apparatus having improved throughput 失效
标题翻译：真空处理装置具有提高的生产能力
公开(公告)号：US5512320A
公开(公告)日：1996-04-30
申请号：US227480
申请日：1994-04-13
申请人： Norman L. Turner , John M. White
发明人： Norman L. Turner , John M. White
IPC分类号： C23C14/56 , C03C17/00 , C23C16/458 , C23C16/46 , C23C16/54 , H01L21/203 , H01L21/205 , H01L21/677 , C23C16/00
CPC分类号： C23C16/46 , C03C17/001 , C23C16/4583 , C23C16/54
摘要： A method for depositing sequential thin films on glass substrates by single substrate deposition comprising loading a batch of substrates into a load lock chamber and evacuating the chamber, transferring the substrates to a batch heating chamber for heating the substrates to elevated temperatures; transferring the glass substrates singly to one or more single substrate processing chambers, and sequentially transferring the substrates back to the load lock chamber where they are batch cooled.A vacuum system for carrying out the method includes a load lock/cooling chamber for evacuating a plurality of glass substrates; a heating chamber for heating a plurality of substrates to elevated temperatures; one or more single substrate processing chambers; and a transfer chamber having access to all of said chambers and having automated means therein for transferring the glass substrates into and out of said chambers in a preselected order.
摘要翻译：一种用于通过单个衬底沉积在玻璃衬底上沉积顺序薄膜的方法，包括将一批衬底加载到负载锁定室中并抽空腔室，将衬底转移到用于将衬底加热到升高的温度的批量加热室; 将玻璃基板单独地转移到一个或多个单个基板处理室，并且将基板顺序地传送回装载锁定室，在那里进行间歇式冷却。用于执行该方法的真空系统包括用于抽空多个玻璃基板的负载锁定/冷却室; 加热室，用于将多个基板加热到升高的温度; 一个或多个单个基板处理室; 以及传送室，其具有进入所有所述室并且具有其中的自动化装置，用于以预选的顺序将玻璃基板输送到所述室中。

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