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    • 12. 发明授权
    • Method of making low mass magnetic recording head and suspension
    • 制造低质量磁记录头和悬浮液的方法
    • US5920762A
    • 1999-07-06
    • US915530
    • 1997-08-15
    • Randall G. SimmonsJoseph J. Fatula, Jr.
    • Randall G. SimmonsJoseph J. Fatula, Jr.
    • G11B5/31G11B5/40G11B5/48G11B5/58H01L21/00
    • G11B5/3106G11B5/3133G11B5/3163G11B5/3183G11B5/40G11B5/484G11B5/58
    • A integral magnetic head and suspension and method for making the same. The integral head and suspension are fabricated completely on silicon (Si) wafers using semiconductor processes. A N+ silicon layer is disposed over a P- silicon wafer. The N+ silicon layer and the P- silicon wafer are thermally oxidized to generate a bottom silicon oxide layer opposite the N+ layer side of the wafer and a top silicon oxide layer on the N+ side of the wafer, and to drive the N+ silicon into the P- silicon wafer. A layer of polysilicon is disposed over the silicon oxide layer on top of the N+ silicon layer and is then patterned to define the head structure and suspension structure as one piece. Then, a magnetic head is disposed on the polysilicon. Finally, the magnetic head and suspension are separated from the wafer by removing the first silicon oxide layer by a chemical etchant and the P- silicon wafer by selective etching. The head and suspension are released from the silicon wafer as a single structure using the above-described semiconductor processes. Accordingly, no grinding or cutting is used to define the dimensions of the head. Further, no processes are required to attach the head to the suspension and the suspension can be made from low mass materials such as silicon (Si) or Al.sub.2 O.sub.3.
    • 一体化磁头和悬架及其制造方法。 使用半导体工艺,在硅(Si)晶片上完全制造整体式头和悬架。 N +硅层设置在P-硅晶片上。 N +硅层和P-硅晶片被热氧化以产生与晶片的N +层侧相对的底部氧化硅层和晶片的N +侧的顶部氧化硅层,并将N +硅驱入 P-硅晶片。 在N +硅层顶部的氧化硅层之上设置多晶硅层,然后将其图案化以将头部结构和悬挂结构定义为一体。 然后,在多晶硅上设置磁头。 最后,通过化学蚀刻剂和P-硅晶片通过选择性蚀刻去除第一氧化硅层,将磁头和悬浮液与晶片分离。 使用上述半导体工艺,头和悬浮液作为单一结构从硅晶片释放。 因此,不使用研磨或切割来限定头部的尺寸。 此外,不需要将头部附接到悬架上,并且悬架可以由诸如硅(Si)或Al 2 O 3的低质量材料制成。