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    • 13. 发明申请
    • Hybrid hall vector magnetometer
    • 混合霍尔矢量磁强计
    • US20050258828A1
    • 2005-11-24
    • US11172663
    • 2005-07-01
    • Mark JohnsonMichael MillerBrian Bennett
    • Mark JohnsonMichael MillerBrian Bennett
    • G01B7/14G01Q60/54G01R33/07
    • G01R33/07Y10S977/853Y10S977/865
    • A modified hybrid Hall effect device is provided which is the combination of a conventional Hall effect device and a second Hall effect device having a Hall plate coupled to a ferromagnetic layer. The hybrid Hall effect device can be used to determine the independent magnetic field vector components comprising a vector magnetic field, such as for determining the x and the z components of a magnetic field, or for measuring the total magnitude of a vector magnetic field of any orientation. The modified Hall Effect device can be adapted for use as a magnetic field sensor for the detection of macroscopic objects that have associated magnetic fields, or for microscopic objects that have been tagged by microscopic magnetic particles. In one specific form, a plurality of hybrid Hall devices are electrically connected together to form an array in which a plurality of rows of hybrid Hall devices are electrically coupled to each other along a current axis, and the array is used for the detection of microscopic objects.
    • 提供了一种改进的混合霍尔效应装置,它是常规霍尔效应装置和具有耦合到铁磁层的霍尔板的第二霍尔效应装置的组合。 可以使用混合霍尔效应装置来确定包括矢量磁场的独立磁场矢量分量,例如用于确定磁场的x和z分量,或用于测量任意的矢量磁场的总大小 方向。 修改的霍尔效应装置可以适用于用于检测具有相关磁场的宏观物体的磁场传感器,或用于由微观磁性颗粒标记的微观物体。 在一个具体形式中,多个混合霍尔器件电连接在一起以形成阵列,其中多行混合霍尔器件沿着电流轴彼此电耦合,并且阵列用于检测微观 对象
    • 14. 发明授权
    • Polymeric compositions and uses therefor
    • 聚合物组合物及其用途
    • US06949609B2
    • 2005-09-27
    • US10317366
    • 2002-12-12
    • Larry F. RhodesRichard VicariLeah J. LangsdorfAndrew A. SobekEdwin P. BoydBrian Bennett
    • Larry F. RhodesRichard VicariLeah J. LangsdorfAndrew A. SobekEdwin P. BoydBrian Bennett
    • C08F32/00C08F8/00C08F114/18C08G61/06G03F7/004G03F7/039
    • C08G61/06G03F7/0046G03F7/0395G03F7/0397
    • The present invention relates to polycyclic polymers, methods for producing polycyclic polymers, and methods for their use as photoresists in the manufacture of integrated circuits. In one embodiment, the present invention relates to photoresist compositions formed from the polymerization of at least one halogenated polycyclic monomer or hydrohalogenated polycyclic monomer. In another embodiment, the present invention relates to photoresist compositions formed from the co-polymerization of at least one halogenated polycyclic monomer or hydrohalogenated polycyclic monomer with at least one non-halogenated polycyclic monomer. Additionally, the present invention relates to methods by which to post-treat such photoresist compositions in order to obtain one or more of: (1) a reduction in optical density of the polymer composition; and (2) a reduction in the amount of residual metal and/or monomer in the polymer composition. Also disclosed are catalyst systems for use in producing the photoresist compositions of the present invention which permit molecular weight control of the photoresist products.
    • 本发明涉及多环聚合物,多环聚合物的制备方法及其在制造集成电路中用作光致抗蚀剂的方法。 在一个实施方案中,本发明涉及由至少一种卤代多环单体或氢卤化多环单体的聚合形成的光致抗蚀剂组合物。 在另一个实施方案中,本发明涉及由至少一种卤代多环单体或氢卤化多环单体与至少一种非卤化多环单体的共聚合形成的光致抗蚀剂组合物。 另外,本发明涉及用于后处理这种光致抗蚀剂组合物以便获得以下一种或多种的方法:(1)聚合物组合物的光密度的降低; 和(2)聚合物组合物中残余金属和/或单体的量的减少。 还公开了用于制备本发明的光致抗蚀剂组合物的催化剂体系,其允许光致抗蚀剂产品的分子量控制。
    • 16. 发明授权
    • Magnetoresistive spin-injection diode
    • 磁阻自旋注入二极管
    • US06297987B1
    • 2001-10-02
    • US09408526
    • 1999-09-30
    • Mark B. JohnsonBrian BennettPhilip R Hammar
    • Mark B. JohnsonBrian BennettPhilip R Hammar
    • G11C1100
    • H01L29/66984G11C11/15
    • A spin injected diode suitable for nonvolatile memory applications is made of a semiconducting channel capable of carrying current, a single ferromagnetic layer, and a barrier layer between the semiconducting channel and the ferromagnetic layer to protect the integrity of the semiconducting layer and to inhibit interdiffusion of the ferromagnetic material and the semiconductor. During diode readout the output modulation of the diode can be sensed either as the interface resistance between the semiconducting channel and the ferromagnetic layer, or as the output voltage between the semiconducting channel and the ferromagnetic layer when flowing current through the channel and not through the interface. Two of these spin injected diodes can be combined to form a spin injected field effect transistor. This transistor has a first ferromagnetic layer having a first coercivity and a second ferromagnetic layer having a second coercivity smaller than the first coercivity which are spaced apart. A gate is situated between the ferromagnetic layers and includes an insulating layer situated below the gate and between the two ferromagnetic layers. A semiconducting channel layer beneath the first and second ferromagnetic layers and beneath the gate forms a low impedance electrical path between the first and second ferromagnetic layers when a control signal is applied to the gate and a high impedance electrical path between these ferromagnetic layers at all other times. A key component is a barrier layer between the semiconducting channel and the two ferromagnetic layers which performs the same functions as in the diode.
    • 适用于非易失性存储器应用的自旋注入二极管由能够承载电流,单个铁磁层以及半导体沟道和铁磁层之间的阻挡层的半导体沟道制成,以保护半导体层的完整性并抑制半导体层的相互扩散 铁磁材料和半导体。 在二极管读数期间,二极管的输出调制可以被感测为半导体沟道和铁磁层之间的界面电阻,或者当流过通道而不是通过界面时半导体沟道和铁磁层之间的输出电压 。 这些自旋注入二极管中的两个可以组合以形成自旋注入的场效应晶体管。 该晶体管具有具有第一矫顽力的第一铁磁层和具有小于间隔开的第一矫顽力的第二矫顽力的第二铁磁层。 栅极位于铁磁层之间,并且包括位于栅极下方和两个铁磁层之间的绝缘层。 当控制信号施加到栅极时,在第一和第二铁磁层下面​​和栅极下方的半导体沟道层在第一和第二铁磁层之间形成低阻抗电路径,以及在所有其它铁磁层之间的这些铁磁层之间的高阻抗电路径 次 关键部件是在半导体通道和两个铁磁层之间的阻挡层,其执行与二极管中相同的功能。
    • 19. 发明授权
    • Hybrid Hall vector magnetometer
    • 混合霍尔矢量磁强计
    • US07064542B2
    • 2006-06-20
    • US11172663
    • 2005-07-01
    • Mark B. JohnsonMichael MillerBrian Bennett
    • Mark B. JohnsonMichael MillerBrian Bennett
    • G01R33/07
    • G01R33/07Y10S977/853Y10S977/865
    • A modified hybrid Hall effect device is provided which is the combination of a conventional Hall effect device and a second Hall effect device having a Hall plate coupled to a ferromagnetic layer. The hybrid Hall effect device can be used to determine the independent magnetic field vector components comprising a vector magnetic field, such as for determining the x and the z components of a magnetic field, or for measuring the total magnitude of a vector magnetic field of any orientation. The modified Hall Effect device can be adapted for use as a magnetic field sensor for the detection of macroscopic objects that have associated magnetic fields, or for microscopic objects that have been tagged by microscopic magnetic particles. In one specific form, a plurality of hybrid Hall devices are electrically connected together to form an array in which a plurality of rows of hybrid Hall devices are electrically coupled to each other along a current axis, and the array is used for the detection of microscopic objects.
    • 提供了一种改进的混合霍尔效应装置,它是常规霍尔效应装置和具有耦合到铁磁层的霍尔板的第二霍尔效应装置的组合。 可以使用混合霍尔效应装置来确定包括矢量磁场的独立磁场矢量分量,例如用于确定磁场的x和z分量,或用于测量任意的矢量磁场的总大小 方向。 修改的霍尔效应装置可以适用于用于检测具有相关磁场的宏观物体的磁场传感器,或用于由微观磁性颗粒标记的微观物体。 在一个具体形式中,多个混合霍尔器件电连接在一起以形成阵列,其中多行混合霍尔器件沿着电流轴彼此电耦合,并且该阵列用于微观检测 对象