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11. 发明申请

US20120049273A1 DEPLETION MOS TRANSISTOR AND CHARGING ARRANGEMENT 有权
标题翻译：绝缘MOS晶体管和充电装置
公开(公告)号：US20120049273A1
公开(公告)日：2012-03-01
申请号：US12868918
申请日：2010-08-26
申请人： Franz Hirler , Anton Mauder , Joachim Weyers , Frank Pfirsch
发明人： Franz Hirler , Anton Mauder , Joachim Weyers , Frank Pfirsch
IPC分类号： H01L29/78 , H01L27/088
CPC分类号： H01L29/7813 , H01L21/823487 , H01L27/0629 , H01L27/0883 , H01L29/0653 , H01L29/0696 , H01L29/407 , H01L29/4238 , H01L29/7803 , H01L29/7828
摘要： A depletion transistor includes a source region and a drain region of a first conductivity type, a channel region of the first conductivity type arranged between the source region and the drain region and a first gate electrode arranged adjacent the channel region and dielectrically insulated from the channel region by a gate dielectric. The depletion transistor further includes a first discharge region of a second conductivity type arranged adjacent the gate dielectric and electrically coupled to a terminal for a reference potential. The depletion transistor can be included in a charging circuit.
摘要翻译：耗尽型晶体管包括源区和漏区，第一导电类型，第一导电类型的沟道区域布置在源区和漏区之间，第一栅电极邻近沟道区设置并与沟道介电绝缘区域。耗尽晶体管还包括第二导电类型的第一放电区域，其布置成邻近栅极电介质并电耦合到用于参考电位的端子。耗尽晶体管可以包括在充电电路中。

12. 发明授权

US09401355B2 Semiconductor device including a diode arranged in a trench 有权
标题翻译：半导体器件包括布置在沟槽中的二极管
公开(公告)号：US09401355B2
公开(公告)日：2016-07-26
申请号：US13328371
申请日：2011-12-16
申请人： Joachim Weyers , Anton Mauder , Franz Hirler , Andreas Meiser , Ulrich Glaser
发明人： Joachim Weyers , Anton Mauder , Franz Hirler , Andreas Meiser , Ulrich Glaser
IPC分类号： H01L29/66 , H01L29/02 , H01L23/62 , H01L27/06 , H01L29/861 , H01L27/08 , H01L27/02
CPC分类号： H01L27/0255 , H01L27/06 , H01L27/0814 , H01L29/407 , H01L29/861 , H01L29/8611 , H01L29/8725
摘要： One embodiment of an integrated circuit includes a semiconductor body. In the semiconductor body a first trench region extends into the semiconductor body from a first surface. The integrated circuit further includes a diode including an anode region and a cathode region. One of the anode region and the cathode region is at least partly arranged in the first trench region. The other one of the anode region and the cathode region includes a first semiconductor region adjoining the one of the anode region and the cathode region from outside of the first trench region.
摘要翻译：集成电路的一个实施例包括半导体本体。在半导体本体中，第一沟槽区域从第一表面延伸到半导体本体中。集成电路还包括包括阳极区域和阴极区域的二极管。阳极区域和阴极区域中的一个至少部分地布置在第一沟槽区域中。阳极区域和阴极区域中的另一个包括从第一沟槽区域的外部邻接阳极区域和阴极区域中的一个的第一半导体区域。

13. 发明申请

US20140027879A1 SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING A SEMICONDUCTOR COMPONENT 有权
标题翻译：半导体元件和半导体元件的制造方法
公开(公告)号：US20140027879A1
公开(公告)日：2014-01-30
申请号：US13560626
申请日：2012-07-27
申请人： Joachim Weyers , Kevni Bueyuektas , Franz Hirler , Anton Mauder
发明人： Joachim Weyers , Kevni Bueyuektas , Franz Hirler , Anton Mauder
IPC分类号： H01L49/02
CPC分类号： H01L28/10 , H01L2924/0002 , H01L2924/00
摘要： One aspect of the invention relates to a semiconductor component with a semiconductor body with a top side and with a bottom side. A first coil that is monolithically integrated with the semiconductor body is arranged distant from the bottom side and comprises N first windings, wherein N≧1. The first coil has a first coil axis that extends in a direction different from a surface normal of the bottom side.
摘要翻译：本发明的一个方面涉及具有顶侧和底侧的半导体本体的半导体部件。与半导体本体一体地集成的第一线圈被布置成远离底侧并且包括N个第一绕组，其中N> = 1。第一线圈具有沿与底侧的表面法线不同的方向延伸的第一线圈轴线。

14. 发明授权

US08530300B2 Semiconductor device with drift regions and compensation regions 有权
标题翻译：具有漂移区域和补偿区域的半导体器件
公开(公告)号：US08530300B2
公开(公告)日：2013-09-10
申请号：US12842488
申请日：2010-07-23
申请人： Joachim Weyers , Armin Willmeroth , Anton Mauder , Franz Hirler
发明人： Joachim Weyers , Armin Willmeroth , Anton Mauder , Franz Hirler
IPC分类号： H01L21/8238
CPC分类号： H01L29/7802 , H01L29/0634 , H01L29/0649 , H01L29/0653 , H01L29/1095 , H01L29/66712 , H01L29/8613 , H01L2924/0002 , H01L2924/00
摘要： Disclosed is a method of forming a semiconductor device with drift regions of a first doping type and compensation regions of a second doping type, and a semiconductor device with drift regions of a first doping type and compensation regions of a second doping type.
摘要翻译：公开了一种形成具有第一掺杂类型的漂移区和第二掺杂型的补偿区的半导体器件的方法，以及具有第一掺杂类型的漂移区和第二掺杂类型的补偿区的半导体器件。

15. 发明授权

US09087707B2 Semiconductor arrangement with a power transistor and a high voltage device integrated in a common semiconductor body 有权
标题翻译：具有集成在公共半导体主体中的功率晶体管和高压器件的半导体装置
公开(公告)号：US09087707B2
公开(公告)日：2015-07-21
申请号：US13429579
申请日：2012-03-26
申请人： Anton Mauder , Franz Hirler , Joachim Weyers , Uwe Wahl
发明人： Anton Mauder , Franz Hirler , Joachim Weyers , Uwe Wahl
IPC分类号： H01L29/78 , H03K3/00 , H01L27/06 , H01L27/088 , H01L29/40 , H01L29/861 , H01L29/8605 , H01L29/06
CPC分类号： H01L29/7811 , H01L27/0629 , H01L27/088 , H01L29/0619 , H01L29/0653 , H01L29/404 , H01L29/407 , H01L29/7801 , H01L29/7803 , H01L29/7804 , H01L29/7813 , H01L29/7825 , H01L29/7838 , H01L29/8605 , H01L29/8611
摘要： A semiconductor arrangement includes a semiconductor body and a power transistor including a source region, a drain region, a body region and a drift region arranged in the semiconductor body, a gate electrode arranged adjacent to the body region and dielectrically insulated from the body region by a gate dielectric. The semiconductor arrangement further includes a high voltage device arranged within a well-like dielectric structure in the semiconductor body and comprising a further drift region.
摘要翻译：半导体装置包括半导体本体和功率晶体管，功率晶体管包括布置在半导体本体中的源区域，漏极区域，体区域和漂移区域，与主体区域相邻布置并与身体区域介电绝缘的栅电极，栅极电介质。半导体装置还包括布置在半导体本体内的类似阱介质结构内的高电压装置，并且包括另外的漂移区域。

16. 发明申请

US20130082768A1 DIODE WITH CONTROLLABLE BREAKDOWN VOLTAGE 有权
标题翻译：具有可控断路电压的二极管
公开(公告)号：US20130082768A1
公开(公告)日：2013-04-04
申请号：US13250265
申请日：2011-09-30
申请人： Franz Hirler , Joachim Weyers
发明人： Franz Hirler , Joachim Weyers
IPC分类号： H01L29/739 , H03K3/335
CPC分类号： H01L29/866 , H01L29/36 , H01L29/40 , H01L29/407 , H01L29/66106 , H01L29/66113
摘要： Disclosed is a diode. An embodiment of the diode includes a semiconductor body, a first emitter region of a first conductivity type, a second emitter region of a second conductivity type, and a base region arranged between the first and second emitter regions and having a lower doping concentration than the first and second emitter regions. The diode further includes a first emitter electrode only electrically coupled to the first emitter region, a second emitter electrode in electrical contact with the second emitter region, and a control electrode arrangement including a first control electrode section, and a first dielectric layer arranged between the first control electrode section and the semiconductor body. At least one pn junction extends to the first dielectric layer or is arranged distant to the first dielectric layer by less than 250 nm.
摘要翻译：公开了一种二极管。二极管的实施例包括半导体本体，第一导电类型的第一发射极区域，第二导电类型的第二发射极区域和布置在第一和第二发射极区域之间的基极区域，并且具有比第一和第二发射极区域。二极管还包括仅电耦合到第一发射极区域的第一发射极电极，与第二发射极区域电接触的第二发射极电极，以及包括第一控制电极部分和布置在第二发射极区域之间的第一电介质层的控制电极装置第一控制电极部分和半导体本体。至少一个pn结延伸到第一介电层或者被布置成远离第一介电层小于250nm。

17. 发明授权

US09184255B2 Diode with controllable breakdown voltage 有权
标题翻译：具有可控击穿电压的二极管
公开(公告)号：US09184255B2
公开(公告)日：2015-11-10
申请号：US13250265
申请日：2011-09-30
申请人： Franz Hirler , Joachim Weyers
发明人： Franz Hirler , Joachim Weyers
IPC分类号： H01L29/739 , H01L29/66 , H01L29/40 , H01L29/866 , H01L29/36
CPC分类号： H01L29/866 , H01L29/36 , H01L29/40 , H01L29/407 , H01L29/66106 , H01L29/66113
摘要： Disclosed is a diode. An embodiment of the diode includes a semiconductor body, a first emitter region of a first conductivity type, a second emitter region of a second conductivity type, and a base region arranged between the first and second emitter regions and having a lower doping concentration than the first and second emitter regions. The diode further includes a first emitter electrode only electrically coupled to the first emitter region, a second emitter electrode in electrical contact with the second emitter region, and a control electrode arrangement including a first control electrode section, and a first dielectric layer arranged between the first control electrode section and the semiconductor body. At least one pn junction extends to the first dielectric layer or is arranged distant to the first dielectric layer by less than 250 nm.
摘要翻译：公开了一种二极管。二极管的实施例包括半导体本体，第一导电类型的第一发射极区域，第二导电类型的第二发射极区域和布置在第一和第二发射极区域之间的基极区域，并且具有比第一和第二发射极区域。二极管还包括仅电耦合到第一发射极区域的第一发射极电极，与第二发射极区域电接触的第二发射极电极，以及包括第一控制电极部分和布置在第二发射极区域之间的第一电介质层的控制电极装置第一控制电极部分和半导体本体。至少一个pn结延伸到第一介电层或者被布置成远离第一介电层小于250nm。

18. 发明授权

US07808067B2 Semiconductor device and temperature sensor structure for a semiconductor device 有权
标题翻译：用于半导体器件的半导体器件和温度传感器结构
公开(公告)号：US07808067B2
公开(公告)日：2010-10-05
申请号：US12057944
申请日：2008-03-28
申请人： Matthias Stecher , Joachim Weyers
发明人： Matthias Stecher , Joachim Weyers
IPC分类号： H01L31/058
CPC分类号： H01L25/16 , G01K13/00 , G01K2217/00 , H01L23/34 , H01L27/0248 , H01L29/7817 , H01L29/7818 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： A temperature sensor structure for a semiconductor device. One embodiment provides a semiconductor substrate including the semiconductor device. A dissipation region of the semiconductor device is adjacent to a main surface of the semiconductor substrate. A first layer arrangement is disposed on the main surface of the semiconductor substrate adjacent to the dissipation region of the semiconductor device. A second layer arrangement is disposed on the first layer arrangement with an insulation layer for galvanic separation therebetween. The first and second layer arrangements and the insulation layer form a layer structure on the main surface above the dissipation region. A circuit element is disposed in the second layer arrangement, the circuit element having a temperature-dependent characteristic and being coupled thermally to the dissipation region.
摘要翻译：一种用于半导体器件的温度传感器结构。一个实施例提供了包括半导体器件的半导体衬底。半导体器件的耗散区域与半导体衬底的主表面相邻。第一层布置设置在与半导体器件的耗散区相邻的半导体衬底的主表面上。第二层布置设置在第一层布置上，其间具有用于电隔离的绝缘层。第一层和第二层布置和绝缘层在散热区上方的主表面上形成层结构。电路元件设置在第二层布置中，电路元件具有温度依赖特性并且热耦合到耗散区。

19. 发明授权

US07943960B2 Integrated circuit arrangement including a protective structure 有权
标题翻译：集成电路布置包括保护结构
公开(公告)号：US07943960B2
公开(公告)日：2011-05-17
申请号：US12024741
申请日：2008-02-01
申请人： Joachim Weyers , Peter Nelle
发明人： Joachim Weyers , Peter Nelle
IPC分类号： H01L29/72 , H01L23/62
CPC分类号： H01L27/0629 , H01L21/743 , H01L21/823481
摘要： An integrated circuit arrangement. In one embodiment, the arrangement includes at least one first semiconductor zone of a first conduction type which is doped more highly than the basic doping of a first semiconductor layer and which is arranged at a distance from a first component zone adjoining the first semiconductor layer. At least one connecting zone extends as far as the at least one first semiconductor zone proceeding from the first side. A second semiconductor zone of the second conduction type, is arranged in the first semiconductor layer and is electrically conductively connected to the at least one connecting zone.
摘要翻译：集成电路装置。在一个实施例中，该装置包括至少一个第一导电类型的第一半导体区，该第一半导体区的掺杂比第一半导体层的基本掺杂更高，并且被布置在与第一半导体层相邻的第一组分区一定距离处。至少一个连接区域从至少一个第一半导体区域延伸到第一侧。第二导电类型的第二半导体区被布置在第一半导体层中，并且电连接到至少一个连接区。

20. 发明申请

US20080237772A1 SEMICONDUCTOR DEVICE AND TEMPERATURE SENSOR STRUCTURE FOR A SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件的半导体器件和温度传感器结构
公开(公告)号：US20080237772A1
公开(公告)日：2008-10-02
申请号：US12057944
申请日：2008-03-28
申请人： Matthias Stecher , Joachim Weyers
发明人： Matthias Stecher , Joachim Weyers
IPC分类号： H01L31/04 , H01L21/00
CPC分类号： H01L25/16 , G01K13/00 , G01K2217/00 , H01L23/34 , H01L27/0248 , H01L29/7817 , H01L29/7818 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： A temperature sensor structure for a semiconductor device. One embodiment provides a semiconductor substrate including the semiconductor device. A dissipation region of the semiconductor device is adjacent to a main surface of the semiconductor substrate. A first layer arrangement is disposed on the main surface of the semiconductor substrate adjacent to the dissipation region of the semiconductor device. A second layer arrangement is disposed on the first layer arrangement with an insulation layer for galvanic separation therebetween. The first and second layer arrangements and the insulation layer form a layer structure on the main surface above the dissipation region. A circuit element is disposed in the second layer arrangement, the circuit element having a temperature-dependent characteristic and being coupled thermally to the dissipation region.
摘要翻译：一种用于半导体器件的温度传感器结构。一个实施例提供了包括半导体器件的半导体衬底。半导体器件的耗散区域与半导体衬底的主表面相邻。第一层布置设置在与半导体器件的耗散区相邻的半导体衬底的主表面上。第二层布置设置在第一层布置上，其间具有用于电隔离的绝缘层。第一层和第二层布置和绝缘层在散热区上方的主表面上形成层结构。电路元件设置在第二层布置中，电路元件具有温度依赖特性并且热耦合到耗散区。

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