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11. 发明授权

US08164726B2 Antireflection film and display device 有权
标题翻译：防反射膜和显示装置
公开(公告)号：US08164726B2
公开(公告)日：2012-04-24
申请号：US11950621
申请日：2007-12-05
申请人： Yuji Egi , Jiro Nishida , Takeshi Nishi
发明人： Yuji Egi , Jiro Nishida , Takeshi Nishi
IPC分类号： G02F1/1335
CPC分类号： G02B1/118 , G02B5/003 , G02B5/1809 , G02B26/026 , G02F1/133502 , G02F1/133528
摘要： It is an object to provide a high-visibility antireflection film having an antireflection function which can further reduce reflection and a display device that has the antireflection film. A plurality of projections in a pyramidal shape (hereinafter, referred to as pyramidal projection) that are adjacent to each other are provided, and the refractive index of the projection is made to change by the physical pyramidal shape to the outer side (air side) from a surface of a display screen, so that reflection of light is prevented. In addition, the plurality of pyramidal projections are each covered with a film formed of a material having a higher refractive index than the pyramidal projections.
摘要翻译：本发明的目的是提供具有能够进一步减少反射的抗反射功能的高可见度抗反射膜和具有防反射膜的显示装置。设置有彼此相邻的金字塔形状的多个突起（以下称为金字塔状的突起），突起的折射率通过物理金字塔形状向外侧（空气侧）变化，从显示屏的表面，防止光的反射。此外，多个金字塔状突起各自被由具有比金字塔形突起更高的折射率的材料形成的膜覆盖。

12. 发明申请

US20120211066A1 PHOTOELECTRIC CONVERSION DEVICE 有权
标题翻译：光电转换器件
公开(公告)号：US20120211066A1
公开(公告)日：2012-08-23
申请号：US13398872
申请日：2012-02-17
申请人： Shunpei YAMAZAKI , Fumito Isaka , Jiro Nishida
发明人： Shunpei YAMAZAKI , Fumito Isaka , Jiro Nishida
IPC分类号： H01L31/0236 , H01L31/0687 , H01L31/0264
CPC分类号： H01L31/02363 , H01L31/028 , H01L31/056 , H01L31/068 , Y02E10/52 , Y02E10/547
摘要： A photoelectric conversion device in which photoelectric conversion in a light-absorption region in a crystalline silicon substrate is efficiently performed is provided. In the photoelectric conversion device, a light-transmitting conductive film which has a high effect of passivation of defects on a silicon surface and improves the reflectance oh a back electrode side is provided between the back electrode and the crystalline silicon substrate. The light-transmitting conductive film includes an organic compound arid an inorganic compound. The organic compound includes a material having an excellent hole-transport property. The inorganic compound includes a transition metal oxide having ah electron-accepting property.
摘要翻译：提供一种其中有效地执行晶体硅衬底中的光吸收区域中的光电转换的光电转换装置。在光电转换装置中，在背面电极和结晶硅基板之间设置有具有高的硅表面上的缺陷钝化和提高背面电极侧的反射率的透光性导电膜。透光导电膜包括有机化合物和无机化合物。有机化合物包括具有优异的空穴传输性的材料。无机化合物包括具有ah电子接受性的过渡金属氧化物。

13. 发明授权

US09093601B2 Photoelectric conversion device 有权
标题翻译：光电转换装置
公开(公告)号：US09093601B2
公开(公告)日：2015-07-28
申请号：US13398877
申请日：2012-02-17
申请人： Shunpei Yamazaki , Fumito Isaka , Jiro Nishida
发明人： Shunpei Yamazaki , Fumito Isaka , Jiro Nishida
IPC分类号： H01L31/00 , H01L31/18 , H01L31/074 , H01L31/075 , H01L31/0224
CPC分类号： H01L31/1868 , H01L31/022466 , H01L31/074 , H01L31/075 , H01L31/1804 , Y02E10/547 , Y02E10/548 , Y02E10/549 , Y02P70/521
摘要： An object is to provide a photoelectric conversion device which has little loss of light absorption in a window layer and has high conversion efficiency. A photoelectric conversion device including a crystalline silicon substrate having n-type conductivity and a light-transmitting semiconductor layer having p-type conductivity between a pair of electrodes is formed. In the photoelectric conversion device, a p-n junction is formed between the crystalline silicon substrate and the light-transmitting semiconductor layer, and the light-transmitting semiconductor layer serves as a window layer. The light-transmitting semiconductor layer includes an organic compound and an inorganic compound. As the organic compound and the inorganic compound, a material having a high hole-transport property and a transition metal oxide having an electron-accepting property are respectively used.
摘要翻译：目的在于提供一种在窗口层中几乎没有光吸收损失并具有高转换效率的光电转换装置。形成包括具有n型导电性的晶体硅衬底和在一对电极之间具有p型导电性的透光半导体层的光电转换装置。在光电转换装置中，在结晶硅衬底和透光半导体层之间形成p-n结，透光半导体层用作窗口层。透光半导体层包括有机化合物和无机化合物。作为有机化合物和无机化合物，分别使用具有高空穴传输性的材料和具有电子接受性的过渡金属氧化物。

14. 发明申请

US20120211065A1 PHOTOELECTRIC CONVERSION DEVICE 审中-公开
标题翻译：光电转换器件
公开(公告)号：US20120211065A1
公开(公告)日：2012-08-23
申请号：US13398871
申请日：2012-02-17
申请人： Shunpei YAMAZAKI , Fumito Isaka , Jiro Nishida
发明人： Shunpei YAMAZAKI , Fumito Isaka , Jiro Nishida
IPC分类号： H01L31/075
CPC分类号： H01L31/075 , H01L31/02167 , H01L31/046 , H01L31/076 , H01L51/006 , H01L51/4213 , Y02E10/548 , Y02E10/549 , Y02P70/521
摘要： An object is to provide a photoelectric conversion device in which the amount of light loss due to light absorption in a window layer is small and light efficiency is high. A photoelectric conversion device, having a p-i-n junction, in which a light-transmitting semiconductor with p-type conductivity, a first silicon semiconductor layer with i-type conductivity, and a second silicon semiconductor layer with n-type conductivity are stacked between a pair of electrodes, is formed. The light-transmitting semiconductor layer is formed using an organic compound and an inorganic compound. A high hole-transport material is used for the organic compound, and a transition metal oxide having an electron-accepting property is used for the inorganic compound.
摘要翻译：目的在于提供一种光电转换装置，其中窗口层中的光吸收引起的光损失量小，光效率高。具有p型导电性的透光半导体，具有i型导电性的第一硅半导体层和具有n型导电性的第二硅半导体层的具有pin结的光电转换元件堆叠在一对之间的电极。透光性半导体层使用有机化合物和无机化合物形成。有机化合物使用高空穴传输材料，无机化合物使用具有电子接受性的过渡金属氧化物。

15. 发明授权

US09437758B2 Photoelectric conversion device 有权
标题翻译：光电转换装置
公开(公告)号：US09437758B2
公开(公告)日：2016-09-06
申请号：US13398872
申请日：2012-02-17
申请人： Shunpei Yamazaki , Fumito Isaka , Jiro Nishida
发明人： Shunpei Yamazaki , Fumito Isaka , Jiro Nishida
IPC分类号： H01L31/00 , H01L31/0236 , H01L31/028 , H01L31/068 , H01L31/056
CPC分类号： H01L31/02363 , H01L31/028 , H01L31/056 , H01L31/068 , Y02E10/52 , Y02E10/547
摘要： A photoelectric conversion device in photoelectric conversion in a light-absorption region in a crystalline silicon substrate is efficiently performed is provided. In the photoelectric conversion device, a light-transmitting conductive film which has a high effect of passivation of defects on a silicon surface and improves the reflectance on a back electrode side is provided between the back electrode and the crystalline silicon substrate, The light-transmitting conductive film includes an organic compound and an inorganic compound. The organic compound includes 4-phenyl-4′-(9-phenylfluoren-9-yl)triphenylamine. The inorganic compound includes an oxide of a metal belonging to any of Groups 4 to 8 of the periodic table.
摘要翻译：提供了一种在晶体硅衬底中的光吸收区域中进行光电转换的光电转换装置。在光电转换装置中，在背面电极和结晶硅基板之间设置有具有高的硅表面上的缺陷钝化和提高背面电极侧的反射率的透光性导电膜。透光性导电膜包括有机化合物和无机化合物。有机化合物包括4-苯基-4' - （9-苯基芴-9-基）三苯胺。无机化合物包括属于周期表第4至8族中任何一种的金属的氧化物。

16. 发明申请

US20120211081A1 PHOTOELECTRIC CONVERSION DEVICE 有权
标题翻译：光电转换器件
公开(公告)号：US20120211081A1
公开(公告)日：2012-08-23
申请号：US13398877
申请日：2012-02-17
申请人： Shunpei YAMAZAKI , Fumito Isaka , Jiro Nishida
发明人： Shunpei YAMAZAKI , Fumito Isaka , Jiro Nishida
IPC分类号： H01L31/0256 , H01L31/06
CPC分类号： H01L31/1868 , H01L31/022466 , H01L31/074 , H01L31/075 , H01L31/1804 , Y02E10/547 , Y02E10/548 , Y02E10/549 , Y02P70/521
摘要： An object is to provide a photoelectric conversion device which has little loss of light absorption in a window layer and has high conversion efficiency. A photoelectric conversion device including a crystalline silicon substrate having n-type conductivity and a light-transmitting semiconductor layer having p-type conductivity between a pair of electrodes is formed. In the photoelectric conversion device, a p-n junction is formed between the crystalline silicon, substrate and the light-transmitting semiconductor layer, and the light-transmitting semiconductor layer serves as a window layer. The light-transmitting semiconductor layer includes an organic compound and an inorganic compound. As the organic compound and the inorganic compound, a material having a high hole-transport property and a transition metal oxide having an electron-accepting property are respectively used.
摘要翻译：目的在于提供一种在窗口层中几乎没有光吸收损失并具有高转换效率的光电转换装置。形成包括具有n型导电性的晶体硅衬底和在一对电极之间具有p型导电性的透光半导体层的光电转换装置。在光电转换装置中，在结晶硅，基板和透光性半导体层之间形成p-n结，透光性半导体层作为窗口层。透光半导体层包括有机化合物和无机化合物。作为有机化合物和无机化合物，分别使用具有高空穴传输性的材料和具有电子接受性的过渡金属氧化物。

17. 发明申请

US20120211067A1 PHOTOELECTRIC CONVERSION DEVICE 审中-公开
标题翻译：光电转换器件
公开(公告)号：US20120211067A1
公开(公告)日：2012-08-23
申请号：US13398876
申请日：2012-02-17
申请人： Shunpei YAMAZAKI , Fumito Isaka , Jiro Nishida
发明人： Shunpei YAMAZAKI , Fumito Isaka , Jiro Nishida
IPC分类号： H01L31/036 , H01L31/0236 , H01L31/06 , H01L31/02
CPC分类号： H01L31/022466 , H01L31/046 , H01L31/0463 , H01L31/0465 , H01L31/056 , H01L31/075 , H01L31/076 , Y02E10/52 , Y02E10/548
摘要： A photoelectric conversion device in which photoelectric conversion in a light-absorption layer is efficiently performed is provided. In the photoelectric conversion device, a light-transmitting conductive film which has a high effect of passivation of defects on a silicon surface and improves the reflectance on a back electrode side is provided between the back electrode and one of semiconductor layers for generation of an internal electric field. The light-transmitting conductive film includes an organic compound and an inorganic compound. The organic compound includes a material having an excellent hole-transport property. The inorganic compound includes a transition metal oxide having an electron-accepting property.
摘要翻译：提供了其中有效地执行光吸收层中的光电转换的光电转换装置。在光电转换装置中，在背面电极和半导体层中的一个之间设置具有硅表面上的缺陷钝化和提高背面电极侧的反射率的透光性导电膜，用于产生内部电场。透光导电膜包括有机化合物和无机化合物。有机化合物包括具有优异的空穴传输性的材料。无机化合物包括具有电子接受性的过渡金属氧化物。

18. 发明授权

US08493658B2 Polarizer and display device including polarizer 有权
公开(公告)号：US08493658B2
公开(公告)日：2013-07-23
申请号：US12213616
申请日：2008-06-23
申请人： Jiro Nishida , Daisuke Kubota
发明人： Jiro Nishida , Daisuke Kubota
IPC分类号： G02B5/30 , G02B27/28 , B05D5/06
CPC分类号： G02B5/3058
摘要： A polarizer in which parallel transmittance TP is increased and crossed transmittance TC is provided. Instead of arranging a plurality of all metal wires on one plane, a plurality of metal wires is separately formed on at least two different parallel planes, and adjacent meal wires among the plurality of metal wires are staggered in the polarizer. The heights of a first group of metal wires formed on a first plane and a second group of metal wires formed on a second plane, from a surface of the light-transmitting substrate are different. Further, a metal wire of the second group is provided to be more distant from the light-transmitting substrate than the first group of metal wires by distance D, and the distance D is smaller than the thickness of the first group of metal wires.

19. 发明申请

US20090009865A1 Polarizer and display device including polarizer 有权
标题翻译：偏振器和显示装置包括偏振器
公开(公告)号：US20090009865A1
公开(公告)日：2009-01-08
申请号：US12213616
申请日：2008-06-23
申请人： Jiro Nishida , Daisuke Kubota
发明人： Jiro Nishida , Daisuke Kubota
IPC分类号： G02B5/30 , B05D5/06
CPC分类号： G02B5/3058
摘要： A polarizer in which parallel transmittance TP is increased and crossed transmittance TC is provided. Instead of arranging a plurality of all metal wires on one plane, a plurality of metal wires is separately formed on at least two different parallel planes, and adjacent meal wires among the plurality of metal wires are staggered in the polarizer. The heights of a first group of metal wires formed on a first plane and a second group of metal wires formed on a second plane, from a surface of the light-transmitting substrate are different. Further, a metal wire of the second group is provided to be more distant from the light-transmitting substrate than the first group of metal wires by distance D, and the distance D is smaller than the thickness of the first group of metal wires.
摘要翻译：提供了平行透射率TP增加并且交叉透射率TC的偏振器。代替在一个平面上布置多个全部金属线，多个金属线分别形成在至少两个不同的平行平面上，并且多个金属线中的相邻的餐具电线在偏振器中交错。形成在第一平面上的第一组金属线的高度和从透光基底的表面形成在第二平面上的第二组金属线的高度是不同的。此外，第二组的金属线设置为比第一组金属线距离D更远离透光基板，距离D小于第一组金属线的厚度。

20. 发明申请

US20060183611A1 MACHINING CENTRE 有权
标题翻译：加工中心
公开(公告)号：US20060183611A1
公开(公告)日：2006-08-17
申请号：US11379674
申请日：2006-04-21
申请人： Takao Taniguchi , Toshiyuki Andou , Mitsuhiro Yamada , Kazutaka Murai , Yuichiro Yoshimura , Jiro Nishida , Atsushi Kohama , Shigeto Noma , Michio Norimatsu , Seiichi Kodama , Haruhiko Koike
发明人： Takao Taniguchi , Toshiyuki Andou , Mitsuhiro Yamada , Kazutaka Murai , Yuichiro Yoshimura , Jiro Nishida , Atsushi Kohama , Shigeto Noma , Michio Norimatsu , Seiichi Kodama , Haruhiko Koike
IPC分类号： B23Q3/157 , B23Q3/155
CPC分类号： B23Q3/15706 , B23Q1/4852 , B23Q1/621 , Y10S483/90 , Y10T29/5114 , Y10T408/545 , Y10T409/30392 , Y10T409/304088 , Y10T409/305712 , Y10T409/306776 , Y10T409/307056 , Y10T409/307504 , Y10T409/307952 , Y10T409/308792 , Y10T409/309576 , Y10T483/115 , Y10T483/16 , Y10T483/1705 , Y10T483/1726 , Y10T483/1795 , Y10T483/1882
摘要： Machining is possible in such a manner that an optional position of a workpiece is positioned just under a tool by rotation of a turn table in a C-axis direction and movement of a spindle on a Y-Z plane, so that a width of a main unit in a X-axis direction can be made shorter in comparison with machining by moving the turn table in the X-axis direction. Besides, the turn table located on a front side of the main unit, an ATC located on the rear side thereof, and a separated control panel located on the rear side of the ATC, independent from the main unit can also make the width of a machining center in the X-axis direction shorter.
摘要翻译：可以通过使工作台的C轴方向的旋转和主轴在YZ平面上的移动而将工件的可选位置定位在工具下方的加工，使得主单元的宽度与X轴方向移动转台相比，能够使X轴方向缩短。此外，位于主单元的前侧的转台，位于其后侧的ATC和位于ATC的后侧的分离的控制面板，独立于主单元也可以使宽度加工中心在X轴方向更短。

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