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11. 发明申请

US20080311020A1 Method for Producing High Purity Silicon 审中-公开
标题翻译：高纯硅生产方法
公开(公告)号：US20080311020A1
公开(公告)日：2008-12-18
申请号：US11885798
申请日：2006-02-28
申请人： Nobuaki Ito , Jiro Kondo , Kensuke Okazawa , Masaki Okajima
发明人： Nobuaki Ito , Jiro Kondo , Kensuke Okazawa , Masaki Okajima
IPC分类号： C01B33/037
CPC分类号： C01B33/037
摘要： An object of the invention is to provide a method for producing a large amount of inexpensive and high purity silicon useful in a solar battery. The method includes steps of preparing molten silicon, preparing a slag, bringing the molten silicon and the slag into contact with each other, and exposing at least the slag to vacuum pressure.
摘要翻译：本发明的目的是提供一种生产用于太阳能电池的大量廉价和高纯度硅的方法。该方法包括以下步骤：制备熔融硅，制备炉渣，使熔融硅和炉渣彼此接触，并至少将炉渣暴露于真空压力。

12. 发明授权

US07455822B2 Method for production of silicon 失效
标题翻译：生产硅的方法
公开(公告)号：US07455822B2
公开(公告)日：2008-11-25
申请号：US10490584
申请日：2003-07-22
申请人： Jiro Kondo , Masaki Okajima , Shinji Tokumaru , Hitoshi Dohnomae
发明人： Jiro Kondo , Masaki Okajima , Shinji Tokumaru , Hitoshi Dohnomae
IPC分类号： C01B33/02
CPC分类号： C01B33/021
摘要： A process for production of Si, characterized by adding an oxide, hydroxide, carbonate or fluoride of an alkali metal element, or an oxide, hydroxide, carbonate or fluoride of an alkaline earth metal element, or two or more of such compounds, to solid SiO in a total molar amount of from 1/20 to 1000 times with respect to the moles of solid SiO, heating the mixture at between the melting point of Si and 2000° C. to induce a chemical reaction which produces Si and separating and recovering the Si from the reaction by-product, for the purpose of inexpensively and efficiently producing Si from various forms of solid SiO with no industrial value produced from Si production steps and the like.
摘要翻译：一种制备Si的方法，其特征在于将碱金属元素的氧化物，氢氧化物，碳酸盐或氟化物，或碱土金属元素的氧化物，氢氧化物，碳酸盐或氟化物，或两种或更多种这些化合物加入到固体 SiO的总摩尔量相对于固体SiO的摩尔数为1/20至1000倍，在Si的熔点和2000℃之间加热混合物以引起产生Si的化学反应并分离和回收来自反应副产物的Si，目的是从Si生产步骤等产生的没有工业价值的各种形式的固体SiO低成本和有效地生产Si。

13. 发明授权

US07114472B2 Electromagnetic valve 失效
标题翻译：电磁阀
公开(公告)号：US07114472B2
公开(公告)日：2006-10-03
申请号：US11157904
申请日：2005-06-22
申请人： Jiro Kondo
发明人： Jiro Kondo
IPC分类号： F01L1/34
CPC分类号： F16K31/0613 , F01L2001/3443 , F01L2001/34433
摘要： A shaft is press-fit into the valve member or the plunger of an electromagnetic valve to transmit the axial movement of the plunger to the valve member. A diameter reducing mechanism is provided for reducing the diameter of at least the press-fit portion of the shaft so that the diameter of the shaft is decreased by a press-fitting force applied to the shaft by the valve member and/or plunger. Deformation due to the press-fitting process is absorbed by the shaft, so deformation of the valve member and/or plunger is inhibited. Accordingly, it is unnecessary to give a large margin to a plunger side air gap, and magnetic efficiency can be improved. Also, two chambers on both axial sides of the plunger can communicate with each other through a clearance provided by the C-shaped cross-section, an inner hole and a penetration hole of the shaft. Therefore, it is unnecessary to form any separate groove or hole in the plunger for respiration.
摘要翻译：轴被压配合到阀构件或电磁阀的柱塞中以将柱塞的轴向运动传递到阀构件。提供了一种直径减小机构，用于减小至少轴的压配部分的直径，使得通过由阀构件和/或柱塞施加到轴的压配合力来减小轴的直径。由于压入工艺引起的变形被轴吸收，因此阀构件和/或柱塞的变形被抑制。因此，不需要对柱塞侧气隙给予较大的余量，并且可以提高磁效率。此外，柱塞的两个轴向侧面上的两个室可以通过由C形横截面，轴的内孔和穿透孔提供的间隙彼此连通。因此，不需要在柱塞中形成用于呼吸的任何单独的凹槽或孔。

14. 发明申请

US20050081810A1 Oil flow control valve 有权
公开(公告)号：US20050081810A1
公开(公告)日：2005-04-21
申请号：US10964771
申请日：2004-10-15
申请人： Eiji Isobe , Jiro Kondo
发明人： Eiji Isobe , Jiro Kondo
IPC分类号： F01L1/34 , F01L1/344 , F16K31/06
CPC分类号： F01L1/024 , F01L1/022 , F01L1/344 , F01L1/3442 , F01L2001/34426 , F01L2001/3443 , F01L2001/34436 , F01L2001/34443 , Y10T137/86501 , Y10T137/86509 , Y10T137/86767 , Y10T137/86775 , Y10T137/86799 , Y10T137/86807
摘要： In an oil flow control valve (OCV) according to the present invention, a first volume varying chamber is adapted to communicate with a second volume varying chamber through a second plunger breathing path, and the second volume varying chamber is adapted to communicate with a first breathing hole through an intra-plunger breathing path, an intra-shaft breathing path, and a third volume varying chamber. That is, the breathing path to the second volume varying chamber is long and the volume thereof is large, and the breathing path to the first volume varying chamber is still longer and larger in its volume. Consequently, the amount of foreign matters getting into the first and second volume varying chambers can be decreased and therefore it is possible to prevent the occurrence of an operation defect of the OCV.

15. 发明授权

US06287852B1 Photosynthetic culture apparatus and group of photosynthesis culture apparatuses 有权
标题翻译：光合培养装置和光合培养装置组
公开(公告)号：US06287852B1
公开(公告)日：2001-09-11
申请号：US09331331
申请日：1999-06-17
申请人： Jiro Kondo , Yoshihisa Nakano , Kazutaka Miyatake , Nobuo Honami , Kenji Kanai , Masahiko Tatsumi
发明人： Jiro Kondo , Yoshihisa Nakano , Kazutaka Miyatake , Nobuo Honami , Kenji Kanai , Masahiko Tatsumi
IPC分类号： C12M142
CPC分类号： C12M21/02 , C12M31/02
摘要： A photosynthetic culture system has a culture bath holding an fluid containing plant microorganisms, carbon dioxide supplying means for supplying carbon dioxide to the fluid in the culture bath, light-conducting plate in the form of a flat plate placed oppositely to a light-receiving culture surface existing on the side of said culture bath, and light-receiving panel mounted on the upper end surface of the light-conducting plate. Further said light-conducting plate has the function of turning incident light from said light-receiving panel by right angles to conduct the light uniformly to said light-receiving culture surface of said culture bath.
摘要翻译：光合培养系统具有保存含有植物微生物的流体的培养槽，向培养槽中的流体供给二氧化碳的二氧化碳供给单元，与受光培养物相对设置的平板状的导光板存在于所述培养槽一侧的表面，以及安装在导光板的上端面上的受光面板。此外，所述导光板具有将来自所述受光面板的入射光直角转动的功能，以将光均匀地传导到所述培养槽的所述光接收培养表面。

16. 发明授权

US5477839A Air intake control system for supercharged engines 失效
标题翻译：增压发动机进气控制系统
公开(公告)号：US5477839A
公开(公告)日：1995-12-26
申请号：US78892
申请日：1993-06-21
申请人： Tomomi Oshima , Masao Inoue , Jiro Kondo
发明人： Tomomi Oshima , Masao Inoue , Jiro Kondo
IPC分类号： F02B29/04 , F02B33/00 , F02B33/44 , F02B75/22 , F02D23/00 , F02D23/02 , F02D43/00 , F02B33/36
CPC分类号： F02B33/446 , F02B29/0412 , F02B29/0418 , F02D23/005 , F02B29/0493 , F02B75/22 , Y02T10/144 , Y02T10/146
摘要： An air intake control system for an engine has intake valves which close at a timing retarded at least 50 degrees from a bottom dead center of an intake stroke. The control system is provided with a mechanical supercharger which is activated while the engine is being cranked.
摘要翻译：用于发动机的进气控制系统具有进气阀，该进气阀在与进气冲程的下止点相比延迟至少50度的定时处闭合。该控制系统具有机械增压器，该发动机在起动时被激活。

17. 发明授权

US4832929A Process for producing a silicon carbide powder 失效
标题翻译：碳化硅粉末的制造方法
公开(公告)号：US4832929A
公开(公告)日：1989-05-23
申请号：US6688
申请日：1987-01-23
申请人： Goro Saiki , Jiro Kondo
发明人： Goro Saiki , Jiro Kondo
IPC分类号： C01B31/36 , C04B35/565 , C04B35/575
CPC分类号： C04B35/565 , C01B31/36 , C04B35/575 , C01P2006/10 , C01P2006/80 , C01P2006/90
摘要： Silicon carbide particles are produced by reacting a gaseous silicon compound or granular silicon with a carbon compound at a high temperature. In the reaction, the amount of free carbon content in the resultant silicon carbide particles can be controlled by monitoring the amount of unsaturated hydrocarbon such as acetylene, as a by-product. Moreover, silicon carbide particles can contain boron dispersed uniformly in the particles by a two step process comprising first reacting a silicon source and a boron source without a carbon source in a first reaction zone, to form boron-containing silicon particles, and second, reacting the resultant particles with a carbon source in a second reaction zone. Further, the above-mentioned monitoring of an unsaturated hydrocarbon by-product allows the obtaining of silicon carbide particles containing no free carbon, and the silicon carbide particles containing boron in the particles but no free carbon may be sintered without the addition of free carbon, to give a dense sinter.
摘要翻译：通过在高温下使气态硅化合物或颗粒状硅与碳化合物反应来制造碳化硅颗粒。在反应中，所得碳化硅颗粒中的游离碳含量可以通过监测作为副产物的不饱和烃如乙炔的量来控制。此外，碳化硅颗粒可以包含通过两步法在颗粒中均匀分散的硼，其包括在第一反应区中首先使硅源和不含碳源的硼源反应形成含硼硅颗粒，其次，使在第二反应区中产生具有碳源的颗粒。此外，上述不饱和烃副产物的监测允许获得不含游离碳的碳化硅颗粒，并且在颗粒中含有硼的碳化硅颗粒但不含游离碳可以不加入游离碳而烧结，给出一个密集的烧结矿。

18. 发明授权

US4812166A Process for producing ultrafine particles of metals, metal compounds and ceramics and apparatus used therefor 失效
标题翻译：用于生产金属，金属化合物和陶瓷的超细颗粒的方法和用于其的设备
公开(公告)号：US4812166A
公开(公告)日：1989-03-14
申请号：US166942
申请日：1988-03-11
申请人： Goro Saiki , Jiro Kondo , Koichi Takeda , Mutsuo Maki , Tutomu Ooki
发明人： Goro Saiki , Jiro Kondo , Koichi Takeda , Mutsuo Maki , Tutomu Ooki
IPC分类号： B01J12/00 , B01J12/02 , B01J19/08 , B22F9/04 , B22F9/12 , C01B13/14 , C01B17/20 , C01B21/06 , C01B21/064 , C01B21/068 , C01B21/072 , C01B21/076 , C01B31/30 , C01B31/36 , C01B33/02 , C01B33/021 , C01B33/06 , C01B33/18 , C01B35/04 , C04B35/565 , B22F9/08
CPC分类号： B82Y30/00 , B01J12/002 , B01J12/02 , B01J19/087 , B22F9/12 , C01B13/145 , C01B17/20 , C01B21/06 , C01B21/0724 , C01B31/30 , C01B31/36 , C01B33/02 , C01B33/06 , C01B35/04 , C04B35/565 , B22F2999/00 , C01B21/0602 , C01B21/0617 , C01B21/062 , C01B21/064 , C01B21/068 , C01B21/076 , C01P2004/32 , C01P2004/38 , C01P2004/52 , C01P2004/61 , C01P2004/62 , C01P2004/64 , C01P2006/60
摘要： Ultrafine particles of metals, metallic compounds, and ceramics can be produced by heating a starting material supplied hermetically with a plurality of direct current plasma currents combined at a central axis of a work coil for generating high frequency induction plasma positioned under the direct current plasma generated zone. Apparatuses used therefor are also disclosed.

19. 发明授权

US10167199B2 Method for manufacturing highly pure silicon, highly pure silicon obtained by this method, and silicon raw material for manufacturing highly pure silicon 有权
公开(公告)号：US10167199B2
公开(公告)日：2019-01-01
申请号：US14383321
申请日：2012-03-08
申请人： Shinji Tokumaru , Masataka Hiyoshi , Jiro Kondo , Hitoshi Dohnomae , Yutaka Kishida , Shigeru Nakazawa , Kozo Onoue
发明人： Shinji Tokumaru , Masataka Hiyoshi , Jiro Kondo , Hitoshi Dohnomae , Yutaka Kishida , Shigeru Nakazawa , Kozo Onoue
IPC分类号： C01B33/021 , C30B21/00 , C01B33/037 , C30B29/06 , C30B11/00 , H01L31/0288 , C30B13/10
摘要： Provided are: a method for manufacturing a highly pure silicon by unidirectional solidification of molten silicon, that can inexpensively and industrially easily manufacture highly pure silicon that has a low oxygen concentration and low carbon concentration and is suitable for applications such as manufacturing solar cells; highly pure silicon obtained by this method; and silicon raw material for manufacturing highly pure silicon. A method for manufacturing highly pure silicon using molten silicon containing 100 to 1000 ppmw of carbon and 0.5 to 2000 ppmw of germanium as the raw material when manufacturing highly pure silicon by unidirectionally solidifying molten silicon raw material in a casting container, the highly pure silicon obtained by this method, and the silicon raw material for manufacturing the highly pure silicon.

20. 发明授权

US08034151B2 Method for removing boron from silicon 失效
标题翻译：从硅中除去硼的方法
公开(公告)号：US08034151B2
公开(公告)日：2011-10-11
申请号：US10591093
申请日：2005-03-02
申请人： Jiro Kondo , Kensuke Okazawa
发明人： Jiro Kondo , Kensuke Okazawa
IPC分类号： C21B11/10
CPC分类号： C01B33/037
摘要： The present invention provides a method for removal of boron from metal silicon inexpensively and extremely efficiently by a simple method, specifically, heating metal silicon containing boron as an impurity to its melting point to 2200° C. to place it in a molten state, then adding a solid mainly comprised of silicon dioxide and a solid mainly comprised of one or both of a carbonate of an alkali metal or a hydrate of a carbonate of an alkali metal into said molten silicon so as to form a slag and remove the boron in the silicon.
摘要翻译：本发明提供了一种通过简单的方法廉价地且极其有效地从金属硅中除去硼的方法，具体地说，将含有硼作为杂质的金属硅加热至其熔点为2200℃以将其置于熔融状态，将主要由二氧化硅组成的固体和主要由碱金属的碳酸盐或碱金属碳酸盐的水合物中的一种或两者组成的固体加入到所述熔融硅中，以形成炉渣并除去硅。

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