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11. 发明授权

US08130809B2 Optoelectronic device having light source emitter and receiver integrated 有权
标题翻译：具有光源发射器和接收器的光电器件集成
公开(公告)号：US08130809B2
公开(公告)日：2012-03-06
申请号：US12703607
申请日：2010-02-10
申请人： Jin-Wei Shi , Fong-Ming Kuo
发明人： Jin-Wei Shi , Fong-Ming Kuo
IPC分类号： H01S5/00
CPC分类号： H01S5/0261 , H01S5/042 , H01S5/183 , H01S5/18308 , H01S5/18311
摘要： An optoelectronic device is provided. A light source emitter and a light source receiver are integrated in the device. The light source emitter is a Zn-diffused vertical cavity surface-emitting laser (VCSEL). The light source receiver is a uni-traveling-carrier photodiode (UTC-PD). With the VCSEL, a 10 Gb/s eye is opened under a small voltage and a small signal amplitude. With the UTC-PD, the 10 Gb/s eye is passed even under zero-bias. Thus, the optoelectronic device has a high speed and power consumption is saved.
摘要翻译：提供了一种光电器件。光源发射器和光源接收器集成在器件中。光源发射器是Zn扩散垂直腔表面发射激光器（VCSEL）。光源接收机是单行载波光电二极管（UTC-PD）。使用VCSEL，在小电压和小信号幅度下打开10 Gb / s眼睛。使用UTC-PD，10Gb / s眼睛即使在零偏压下也通过。因此，光电器件具有高速度并节省功耗。

12. 发明申请

US20050051861A1 Avalanche photo-detector with high saturation power and high gain-bandwidth product 失效
公开(公告)号：US20050051861A1
公开(公告)日：2005-03-10
申请号：US10720117
申请日：2003-11-25
申请人： Jin-Wei Shi , Chee-Wee Liu
发明人： Jin-Wei Shi , Chee-Wee Liu
IPC分类号： H01L31/08 , H01L31/107
CPC分类号： B82Y10/00 , H01L31/107
摘要： An avalanche photo-detector (APD) is disclosed, which can reduce device capacitance, operating voltage, carrier transport time and dark current as well as increasing response speed and output power. Thus, an avalanche photo-detector (APD) with high saturation power, high gain-bandwidth product, low noise, fast response, low dark current is achieved. The APD includes an absorption layer with graded doping for converting an incident light into carriers, an undoped multiplication layer for multiplying current by means of receiving carriers, a doped field buffer layer sandwiched between the absorption layer and the multiplication layer for concentrating an electric field in the multiplication layer when a bias voltage is applied, and an undoped drift layer sandwiched between the absorption layer and the field buffer layer for capacitance reduction.

13. 发明申请

US20140050240A1 Vertical-Cavity Surface-Emitting Laser with a Mode Control Cavity and an Undercut Structure 审中-公开
标题翻译：具有模式控制腔和底切结构的垂直腔表面发射激光器
公开(公告)号：US20140050240A1
公开(公告)日：2014-02-20
申请号：US13666302
申请日：2012-11-01
申请人： Jin-Wei Shi , Ying-Jay Yang
发明人： Jin-Wei Shi , Ying-Jay Yang
IPC分类号： H01S5/187 , H01S5/34
CPC分类号： H01S5/18316 , H01S5/0425 , H01S5/18327 , H01S5/18333 , H01S5/18341 , H01S5/2072
摘要： A new vertical-cavity surface-emitting laser (VCESL) is provided. With an undercut structure and a diffusion structure, the VCESL obtains a controllable number of optical modes for a distributed Bragg reflector (DBR). Thus, an electrical-to-optical bandwidth and a bit-rate transmission distance in OM4 fiber reach their biggest values. Besides, a biggest D-coefficient (˜13.5 GHz/mA1/2), a smallest energy-data rate under 34 Gbit/s (EDR:140 fJ/bit) and a smallest energy-data distance rate under 25 Gbit/s with 0.8 km of OM4 fiber (EDDR:175.5 fJ/bit·km) are obtained.
摘要翻译：提供了一种新的垂直腔表面发射激光器（VCESL）。利用底切结构和扩散结构，VCESL获得了分布式布拉格反射器（DBR）的可控数量的光学模式。因此，OM4光纤中的电 - 光带宽和比特率传输距离达到最大值。此外，最大的D系数（〜13.5 GHz / mA1 / 2），最小的能量数据速率在34 Gbit / s（EDR：140 fJ / bit）以下，最小能量数据距离速率在25 Gbit / s以下，获得0.8公里的OM4光纤（EDDR：175.5 fJ / bit·km）。

14. 发明申请

US20120163407A1 Vertical-Cavity Surface-Emitting Laser Device Having Relief Structure 有权
标题翻译：具有浮雕结构的垂直腔表面发射激光器件
公开(公告)号：US20120163407A1
公开(公告)日：2012-06-28
申请号：US13026642
申请日：2011-02-14
申请人： Ying-Jay Yang , Jin-Wei Shi
发明人： Ying-Jay Yang , Jin-Wei Shi
IPC分类号： H01S5/183 , H01S5/323
CPC分类号： H01S5/18313 , H01S5/18347 , H01S5/18394 , H01S2301/176
摘要： The present disclosure is a vertical-cavity surface-emitting laser (VCSEL) device. A relief structure is formed above or below a light emitting region by partially removing an aluminum composition layer of VCESL through an etching process. Thus, profound static performances are obtained, including low power consumption, biggest operational speed, and high ratio of data transmission to power consumption as 2.9 and 9.2 Gbps/mW under 34 and 12.5 Gbps, respectively.
摘要翻译：本公开是垂直腔表面发射激光器（VCSEL）装置。通过通过蚀刻工艺部分去除VCESL的铝组合物层，在发光区域的上方或下方形成浮雕结构。因此，在34和12.5 Gbps下，可以获得包括低功耗，最大运行速度和高功耗的数据传输与功耗比分别为2.9和9.2 Gbps / mW的深度静态性能。

15. 发明授权

US07271418B2 Semiconductor apparatus for white light generation and amplification 有权
标题翻译：用于白光发生和放大的半导体装置
公开(公告)号：US07271418B2
公开(公告)日：2007-09-18
申请号：US10948215
申请日：2004-09-24
申请人： Jin-Wei Shi , Jinn-Kong Sheu
发明人： Jin-Wei Shi , Jinn-Kong Sheu
IPC分类号： H01L27/15 , H01L31/12 , H01L31/153 , H01L33/00
CPC分类号： H01S5/227 , B82Y20/00 , H01L33/08 , H01L33/32 , H01S5/0424 , H01S5/2206 , H01S5/3095 , H01S5/34333
摘要： The present invention is a semiconductor apparatus for white light generation and amplification, where, under different current bias, white light can be generated steadily and evenly by folding up multi-wavelength quantum wells and by side-injecting a current. And, the white light can be excited out electronically without mingling with a fluorescent powder so that the cost for sealing is reduced. Because the light is directly excited out by electricity to prevent from energy loss during fluorescence transformation, the light generation efficiency of the present invention is far greater than that of the traditional phosphorus mingled with light-emitting diode of white light. Besides, concerning the characteristics of the white light, the spectrum of the white light can be achieved by adjusting the structure and/or the number of the quantum wells while preventing from being limited by the atomic emission lines of the fluorescent powder.
摘要翻译：本发明是一种用于白光发生和放大的半导体装置，其中在不同的电流偏压下，通过折叠多波长量子阱并通过侧注射电流可以稳定和均匀地产生白光。而且，白光可以以电子方式激发而不与荧光粉混合，从而降低了密封成本。由于光被电力直接激发以防止在荧光变换期间的能量损失，所以本发明的发光效率远远大于与白光发光二极管混合的传统磷的发光效率。此外，关于白光的特性，白光的光谱可以通过调整量子阱的结构和/或数量同时防止受到荧光粉的原子发射线的限制而实现。

16. 发明授权

US07102807B2 High-speed electro-absorption modulator with low drive voltage 有权
标题翻译：具有低驱动电压的高速电吸收式调制器
公开(公告)号：US07102807B2
公开(公告)日：2006-09-05
申请号：US10967161
申请日：2004-10-19
申请人： Jin-Wei Shi , Chen-An Hsieh
发明人： Jin-Wei Shi , Chen-An Hsieh
IPC分类号： G02F1/03
CPC分类号： B82Y20/00 , G02F1/017 , G02F1/01708 , G02F1/01725
摘要： The present invention is an electro-absorption modulator with a p-i-n-i-n epitaxy layer whose structure is p-i(MQW)-n+-i(collector)-n to release the trade-off between the operation voltage and the speed, to increase the confinement factor of the light in the un-doped layers, and to reduce the insertion loss caused by the free-carrier absorption in the doped layers, wherein MQW stands for Multiple-Quantum Well.
摘要翻译：本发明是一种具有pinin外延层的电吸收调制器，其结构是pi（MQW）-n + +（集电极）-n以释放操作电压和速度，以增加未掺杂层中的光的约束因子，并且减少由掺杂层中的自由载流子吸收引起的插入损耗，其中MQW代表多量子阱。

17. 发明申请

US20060082855A1 High-speed electro-absorption modulator with low drive voltage 有权
公开(公告)号：US20060082855A1
公开(公告)日：2006-04-20
申请号：US10967161
申请日：2004-10-19
申请人： Jin-Wei Shi , Chen-An Hsieh
发明人： Jin-Wei Shi , Chen-An Hsieh
IPC分类号： G02F1/01 , G02F1/035
CPC分类号： B82Y20/00 , G02F1/017 , G02F1/01708 , G02F1/01725
摘要： The present invention is an electro-absorption modulator with a p-i-n-i-n epitaxy layer whose structure is p-i(MQW)-n+-i(collector)-n to release the trade-off between the operation voltage and the speed, to increase the confinement factor of the light in the un-doped layers, and to reduce the insertion loss caused by the free-carrier absorption in the doped layers, wherein MQW stands for Multiple-Quantum Well.

18. 发明申请

US20060054927A1 Sensor using a GaN transistor 审中-公开
标题翻译：使用GaN晶体管的传感器
公开(公告)号：US20060054927A1
公开(公告)日：2006-03-16
申请号：US11143861
申请日：2005-06-03
申请人： Wen-Kai Wang , Jin-Wei Shi , Yi-Jen Chan
发明人： Wen-Kai Wang , Jin-Wei Shi , Yi-Jen Chan
IPC分类号： H01L31/0328
CPC分类号： G01L9/0098 , G01L9/0042 , H01L29/2003 , H01L29/7786 , H01L29/812
摘要： The present invention uses a GaN transistor grown over a Si substrate, which is obtained by etching through lithography or a plasma etching; and is used as a pressure sensor with great sensitivity by utilizing the characteristic of piezoelectric effect of GaN with the ability of magnifying signals and providing very high sensitivity; and is integrated into an IC, or into a micro electro-mechanical system of Si semiconductor.
摘要翻译：本发明使用通过光刻或等离子体蚀刻蚀刻而获得的在Si衬底上生长的GaN晶体管; 并利用GaN的压电效应特性，具有放大信号的能力，提供极高的灵敏度，作为高灵敏度的压力传感器; 并且被集成到IC或Si半导体的微机电系统中。

19. 发明授权

US06963089B2 Avalanche photo-detector with high saturation power and high gain-bandwidth product 失效
标题翻译：具有高饱和功率和高增益带宽产品的雪崩光电检测器
公开(公告)号：US06963089B2
公开(公告)日：2005-11-08
申请号：US10720117
申请日：2003-11-25
申请人： Jin-Wei Shi , Chee-Wee Liu
发明人： Jin-Wei Shi , Chee-Wee Liu
IPC分类号： H01L31/08 , H01L31/107
CPC分类号： B82Y10/00 , H01L31/107
摘要： An avalanche photo-detector (APD) is disclosed, which can reduce device capacitance, operating voltage, carrier transport time and dark current as well as increasing response speed and output power. Thus, an avalanche photo-detector (APD) with high saturation power, high gain-bandwidth product, low noise, fast response, low dark current is achieved. The APD includes an absorption layer with graded doping for converting an incident light into carriers, an undoped multiplication layer for multiplying current by means of receiving carriers, a doped field buffer layer sandwiched between the absorption layer and the multiplication layer for concentrating an electric field in the multiplication layer when a bias voltage is applied, and an undoped drift layer sandwiched between the absorption layer and the field buffer layer for capacitance reduction.
摘要翻译：公开了一种雪崩光电检测器（APD），可以降低器件电容，工作电压，载流子传输时间和暗电流以及响应速度和输出功率。因此，实现了具有高饱和功率，高增益带宽乘积，低噪声，快速响应，低暗电流的雪崩光电检测器（APD）。 APD包括具有用于将入射光转换成载流子的渐变掺杂的吸收层，用于通过接收载流子来乘以电流的未掺杂乘法层，夹在吸收层和乘法层之间的掺杂场缓冲层，用于将电场集中施加偏置电压时的倍增层和夹在吸收层和场缓冲层之间的未掺杂漂移层用于电容降低。

20. 发明申请

US20130051807A1 PHOTONIC MILLIMETER-WAVE GENERATOR 审中-公开
标题翻译：光电微波发生器
公开(公告)号：US20130051807A1
公开(公告)日：2013-02-28
申请号：US13217005
申请日：2011-08-24
申请人： Chen-Bin Huang , Jin-Wei Shi , Ci-Ling Pan
发明人： Chen-Bin Huang , Jin-Wei Shi , Ci-Ling Pan
IPC分类号： H04B10/04
CPC分类号： H04B10/25754 , H04B2210/006
摘要： A photonic millimeter-wave generator capable of combining wired and wireless communication facilities to further elongate the transmission distance comprises a laser generator for generating a first optical signal; an optical frequency comb generator coupled with the laser generator; and a pulse shaper coupled with the optical frequency comb generator. The optical frequency comb generator receives the first optical signal generated by the laser generator and outputs a second optical signal. The second optical signal contains multiple frequency components and is sent to the pulse shaper. The pulse shaper adjusts the amplitude and phase of the second optical signal and then outputs the signal as a third optical signal.
摘要翻译：能够组合有线和无线通信设施以进一步延长传输距离的光子毫米波发生器包括用于产生第一光信号的激光发生器; 与激光发生器耦合的光频梳发生器; 以及与光学频率梳发生器耦合的脉冲整形器。光频梳发生器接收由激光发生器产生的第一光信号并输出第二光信号。第二光信号包含多个频率分量并被发送到脉冲整形器。脉冲整形器调整第二光信号的幅度和相位，然后输出该信号作为第三光信号。

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