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11. 发明申请

US20180108669A1 SEMICONDUCTOR DEVICES AND METHODS OF FABRICATION 审中-公开
公开(公告)号：US20180108669A1
公开(公告)日：2018-04-19
申请号：US15296858
申请日：2016-10-18
申请人： Hongbin Zhu , Zhenyu Lu , Gordon Haller , Jie Sun , Randy J. Koval , John Hopkins
发明人： Hongbin Zhu , Zhenyu Lu , Gordon Haller , Jie Sun , Randy J. Koval , John Hopkins
IPC分类号： H01L27/115 , H01L29/10 , H01L29/51 , H01L21/311 , H01L21/28 , H01L21/285
CPC分类号： H01L27/11556 , H01L21/28273 , H01L21/28525 , H01L21/28556 , H01L21/31111 , H01L27/1157 , H01L27/11582 , H01L29/1037 , H01L29/513
摘要： Some embodiments include a semiconductor device having a stack structure including a source comprising polysilicon, an etch stop of oxide on the source, a select gate source on the etch stop, a charge storage structure over the select gate source, and a select gate drain over the charge storage structure. The semiconductor device may further include an opening extending vertically into the stack structure to a level adjacent to the source. A channel comprising polysilicon may be formed on a side surface and a bottom surface of the opening. The channel may contact the source at a lower portion of the opening, and may be laterally separated from the charge storage structure by a tunnel oxide. A width of the channel adjacent to the select gate source is greater than a width of the channel adjacent to the select gate drain.

12. 发明授权

US09677738B2 Optical device and system for solid-state lighting 有权
公开(公告)号：US09677738B2
公开(公告)日：2017-06-13
申请号：US14211124
申请日：2014-03-14
申请人： Jie Sun , Christopher Hart , Stephen Naor
发明人： Jie Sun , Christopher Hart , Stephen Naor
IPC分类号： F21V5/00 , F21V3/00 , F21V5/04 , F21V29/83 , F21V29/77 , F21K9/232 , F21K9/60 , F21Y115/10
CPC分类号： F21V5/04 , F21K9/135 , F21K9/232 , F21K9/60 , F21V3/00 , F21V29/773 , F21V29/83 , F21Y2115/10 , Y02B20/30
摘要： An optical device for transforming an input light distribution from an LED light source to provide an omni-directional output light distribution for solid-state lighting is disclosed. The optical device has a conical form, comprising first and second coaxial cones of different refractive index, defined by coaxial inner and outer cone surfaces, which converge from a cone base to a rounded tip at the apex. Preferably, each of the inner and outer cone surfaces comprises a plurality of conical facets defining a grating structure. The inner cone, i.e. air cavity, is directly coupled to an LED emitter area. Cone angles and spacings of conical facets, defining inner and outer gratings, are tailored to reshape a predetermined input light distribution. Apertures assist in heat dissipation. A lightweight, compact device with high transmission efficiency can be manufactured at low cost by one-step injection molding from an optical-grade polymer, such as PMMA.

13. 发明授权

US08834982B2 Carbon nanoring and method for preparing the same 有权
标题翻译：碳纳米及其制备方法
公开(公告)号：US08834982B2
公开(公告)日：2014-09-16
申请号：US13994487
申请日：2011-12-07
申请人： Wensheng Yang , Jie Sun , Xu Chen , Haimei Liu
发明人： Wensheng Yang , Jie Sun , Xu Chen , Haimei Liu
IPC分类号： B32B3/02 , C01B31/02 , B82Y40/00
CPC分类号： C01B31/0293 , B82Y30/00 , B82Y40/00 , C01B31/0206 , C01B32/15 , Y10T428/21
摘要： The invention relates to a carbon nanoring and a method for preparing the same. The carbon nanoring according to the present invention is composed of monolayered or multilayered coaxial carbon rings, wherein the carbon ring has a structure similar to that of a closed ring system formed by graphite sheet being rolled, and each of an axial dimension and a radial dimension of the carbon nanoring is nanoscale with the axial dimension being smaller than the radial dimension. The invention further provides a method for preparing the above carbon nanoring including calcinating in an inert atmosphere or a reducing atmosphere a layered double hydroxides obtained by intercalating a long-chain alkyl anion and a carbon source molecule, growing a carbon nanoring within a confined region between layers under the catalysis of the metal element in layers, and removing the metal and the metal oxide by dissolving in an acid to obtain the carbon nanoring. By using this method, the carbon nanoring can be effectively controlled in terms of the axial dimension, the radial dimension, and the number of layers of the carbon ring thereof. The carbon nanoring provided by the present invention has the nano-ring shaped structure and the excellent properties of carbon materials, as well as more edge carbons and dangling bonds, and thus it has broad application prospects in such field as nanodevices, energy storage and sensing.
摘要翻译：本发明涉及一种碳纳米管及其制备方法。根据本发明的碳纳米管由单层或多层同轴碳环组成，其中碳环的结构类似于由滚动的石墨片形成的闭环系统，其轴向尺寸和径向尺寸的碳纳米尺寸是纳米级的，其轴向尺寸小于径向尺寸。本发明还提供了一种制备上述碳纳米管的方法，包括在惰性气氛或还原气氛中煅烧通过插入长链烷基阴离子和碳源分子获得的层状双氢氧化物，在碳纳米管之间的限制区内生长碳纳米在层内催化金属元素层，并通过溶解在酸中去除金属和金属氧化物以获得碳纳米。通过使用该方法，可以根据其碳环的轴向尺寸，径向尺寸和层数有效地控制碳纳米化。本发明提供的碳纳米管具有纳米环形结构和碳材料的优异性能，以及更多的边缘碳和悬挂键，因此在纳米器件，能量存储和感测领域具有广泛的应用前景。

14. 发明申请

US20130273294A1 CARBON NANORING AND METHOD FOR PREPARING THE SAME 有权
标题翻译：碳纳米管及其制备方法
公开(公告)号：US20130273294A1
公开(公告)日：2013-10-17
申请号：US13994487
申请日：2011-12-07
申请人： Wensheng Yang , Jie Sun , Xu Chen , Haimei Liu
发明人： Wensheng Yang , Jie Sun , Xu Chen , Haimei Liu
IPC分类号： C01B31/02
CPC分类号： C01B31/0293 , B82Y30/00 , B82Y40/00 , C01B31/0206 , C01B32/15 , Y10T428/21
摘要： The invention relates to a carbon nanoring and a method for preparing the same. The carbon nanoring according to the present invention is composed of monolayered or multilayered coaxial carbon rings, wherein the carbon ring has a structure similar to that of a closed ring system formed by graphite sheet being rolled, and each of an axial dimension and a radial dimension of the carbon nanoring is nanoscale with the axial dimension being smaller than the radial dimension. The invention further provides a method for preparing the above carbon nanoring including calcinating in an inert atmosphere or a reducing atmosphere a layered double hydroxides obtained by intercalating a long-chain alkyl anion and a carbon source molecule, growing a carbon nanoring within a confined region between layers under the catalysis of the metal element in layers, and removing the metal and the metal oxide by dissolving in an acid to obtain the carbon nanoring. By using this method, the carbon nanoring can be effectively controlled in terms of the axial dimension, the radial dimension, and the number of layers of the carbon ring thereof. The carbon nanoring provided by the present invention has the nano-ring shaped structure and the excellent properties of carbon materials, as well as more edge carbons and dangling bonds, and thus it has broad application prospects in such field as nanodevices, energy storage and sensing.
摘要翻译：本发明涉及一种碳纳米管及其制备方法。根据本发明的碳纳米管由单层或多层同轴碳环组成，其中碳环的结构类似于由滚动的石墨片形成的闭环系统，其轴向尺寸和径向尺寸的碳纳米尺寸是纳米级的，其轴向尺寸小于径向尺寸。本发明还提供了一种制备上述碳纳米管的方法，包括在惰性气氛或还原气氛中煅烧通过嵌入长链烷基阴离子和碳源分子获得的层状双氢氧化物，在碳纳米管之间的限制区内生长碳纳米在层内催化金属元素层，并通过溶解在酸中去除金属和金属氧化物以获得碳纳米。通过使用该方法，可以根据其碳环的轴向尺寸，径向尺寸和层数有效地控制碳纳米化。本发明提供的碳纳米管具有纳米环形结构和碳材料的优异性能，以及更多的边缘碳和悬挂键，因此在纳米器件，能量存储和感测领域具有广泛的应用前景。

15. 发明授权

US08197914B2 Method for depositing zinc oxide at low temperatures and products formed thereby 有权
标题翻译：低温沉积氧化锌的方法及由此形成的产品
公开(公告)号：US08197914B2
公开(公告)日：2012-06-12
申请号：US11284193
申请日：2005-11-21
申请人： Diwakar Garg , Philip Bruce Henderson , Daniel Joseph Tempel , Thomas N. Jackson , Jie Sun
发明人： Diwakar Garg , Philip Bruce Henderson , Daniel Joseph Tempel , Thomas N. Jackson , Jie Sun
IPC分类号： H05H1/24
CPC分类号： C03C17/245 , C03C2217/216 , C03C2217/24 , C03C2217/241 , C03C2218/153 , C23C16/407
摘要： The present invention discloses plasma enhanced chemical vapor deposition (PECVD) process for depositing n-type and p-type zinc oxide-based transparent conducting oxides (TCOs) at low temperatures with excellent optical and electrical properties on glass and temperature sensitive materials such as plastics and polymers. Specifically, it discloses PECVD process for depositing n-type ZnO by doping it with B or F and p-type ZnO by doping it with nitrogen excellent optical and electrical properties on glass and temperature sensitive materials such as plastics and polymers for TCO application. The process utilizes a mixture of volatile zinc compound, argon and/or helium as a diluent gas, carbon dioxide as an oxidant, and a dopant or reactant to deposit the desired ZnO-based TCOs.
摘要翻译：本发明公开了一种用于在低温下沉积n型和p型氧化锌基透明导电氧化物（TCO）的等离子体增强化学气相沉积（PECVD）工艺，在玻璃和温度敏感材料如塑料上具有优异的光学和电学性能和聚合物。具体地说，它公开了用于通过用B或F和p型ZnO掺杂以将氮掺杂在玻璃上的优异的光学和电学性质以及用于TCO应用的诸如塑料和聚合物的温度敏感材料来沉积n型ZnO的PECVD工艺。该方法利用挥发性锌化合物，氩和/或氦气作为稀释气体，二氧化碳作为氧化剂和掺杂剂或反应物的混合物以沉积所需的ZnO基TCO。

16. 发明申请

US20060004289A1 High sensitivity capacitive micromachined ultrasound transducer 审中-公开
标题翻译：高灵敏度电容微机械超声换能器
公开(公告)号：US20060004289A1
公开(公告)日：2006-01-05
申请号：US10881924
申请日：2004-06-30
申请人： Wei-Cheng Tian , Warren Lee , Lowell Smith , Ye-Ming Li , Jie Sun
发明人： Wei-Cheng Tian , Warren Lee , Lowell Smith , Ye-Ming Li , Jie Sun
IPC分类号： A61B8/14
CPC分类号： B06B1/0292 , B06B2201/76
摘要： A capacitive micromachined ultrasound transducer (cMUT) comprises a lower electrode. Furthermore, the cMUT includes a diaphragm disposed adjacent to the lower electrode such that a gap having a first gap width is formed between the diaphragm and the lower electrode. Additionally, the cMUT includes at least one element formed in the gap, where the at least one element is arranged to provide a second gap width between the diaphragm and the lower electrode.
摘要翻译：电容微加工超声换能器（cMUT）包括下电极。此外，cMUT包括邻近下电极设置的隔膜，使得在隔膜和下电极之间形成具有第一间隙宽度的间隙。此外，cMUT包括形成在间隙中的至少一个元件，其中至少一个元件布置成在隔膜和下电极之间提供第二间隙宽度。

17. 发明申请

US20180131155A1 PHOTONIC DEVICES AND METHODS OF USING AND MAKING PHOTONIC DEVICES 审中-公开
公开(公告)号：US20180131155A1
公开(公告)日：2018-05-10
申请号：US15718045
申请日：2017-09-28
申请人： Purnawirman Purnawirman , Michael R. Watts , Ehsan Shah Hosseini , Jonathan B. Bradley , Jie Sun , Matteo Cherchi
发明人： Purnawirman Purnawirman , Michael R. Watts , Ehsan Shah Hosseini , Jonathan B. Bradley , Jie Sun , Matteo Cherchi
IPC分类号： H01S3/063 , H01S3/16 , H01S3/091 , H01S3/17 , H01S3/08 , H01S3/083 , H01S3/094 , H01S3/23 , H01S3/105
CPC分类号： H01S3/0632 , H01S3/0635 , H01S3/0637 , H01S3/08059 , H01S3/083 , H01S3/091 , H01S3/094096 , H01S3/1053 , H01S3/1608 , H01S3/1636 , H01S3/17 , H01S3/2308
摘要： Examples of the present invention include integrated erbium-doped waveguide lasers designed for silicon photonic systems. In some examples, these lasers include laser cavities defined by distributed Bragg reflectors (DBRs) formed in silicon nitride-based waveguides. These DBRs may include grating features defined by wafer-scale immersion lithography, with an upper layer of erbium-doped aluminum oxide deposited as the final step in the fabrication process. The resulting inverted ridge-waveguide yields high optical intensity overlap with the active medium for both the 980 nm pump (89%) and 1.5 μm laser (87%) wavelengths with a pump-laser intensity overlap of over 93%. The output powers can be 5 mW or higher and show lasing at widely-spaced wavelengths within both the C- and L-bands of the erbium gain spectrum (1536, 1561 and 1596 nm).

18. 发明授权

US09325140B2 Photonic devices and methods of using and making photonic devices 有权
标题翻译：光子器件和使用和制造光子器件的方法
公开(公告)号：US09325140B2
公开(公告)日：2016-04-26
申请号：US14200427
申请日：2014-03-07
申请人： Purnawirman Purnawirman , Michael R. Watts , Ehsan Shah Hosseini , Jonathan D. B. Bradley , Jie Sun , Matteo Cherchi
发明人： Purnawirman Purnawirman , Michael R. Watts , Ehsan Shah Hosseini , Jonathan D. B. Bradley , Jie Sun , Matteo Cherchi
IPC分类号： H01S3/063 , H01S3/17 , H01S3/08 , H01S3/083 , H01S3/094 , H01S3/16 , H01S3/23 , H01S3/105
CPC分类号： H01S3/0632 , H01S3/0635 , H01S3/08059 , H01S3/083 , H01S3/091 , H01S3/094096 , H01S3/1053 , H01S3/1608 , H01S3/1636 , H01S3/17 , H01S3/2308
摘要： Examples of the present invention include integrated erbium-doped waveguide lasers designed for silicon photonic systems. In some examples, these lasers include laser cavities defined by distributed Bragg reflectors (DBRs) formed in silicon nitride-based waveguides. These DBRs may include grating features defined by wafer-scale immersion lithography, with an upper layer of erbium-doped aluminum oxide deposited as the final step in the fabrication process. The resulting inverted ridge-waveguide yields high optical intensity overlap with the active medium for both the 980 nm pump (89%) and 1.5 μm laser (87%) wavelengths with a pump-laser intensity overlap of over 93%. The output powers can be 5 mW or higher and show lasing at widely-spaced wavelengths within both the C- and L-bands of the erbium gain spectrum (1536, 1561 and 1596 nm).
摘要翻译：本发明的实例包括为硅光子系统设计的集成铒掺杂波导激光器。在一些示例中，这些激光器包括由在氮化硅基波导中形成的分布式布拉格反射器（DBR）限定的激光腔。这些DBR可以包括由晶片级浸没式光刻术定义的光栅特征，其中沉积有掺杂铒的氧化铝的上层作为制造过程的最后步骤。所产生的倒脊波导与980nm泵（89％）和1.5μm激光（87％）波长的激光介质产生高的光强度重叠，泵激光强度重叠率超过93％。输出功率可以为5mW或更高，并且在铒增益光谱（1536,1561和1596nm）的C波段和L波段内的宽间隔波长处显示激光。

19. 发明授权

US09116193B2 Electronic device and method for detecting current leakage of electronic components in the electronic device 有权
标题翻译：用于检测电子设备中的电子部件的电流泄漏的电子装置和方法
公开(公告)号：US09116193B2
公开(公告)日：2015-08-25
申请号：US13485979
申请日：2012-06-01
申请人： Jie Sun
发明人： Jie Sun
IPC分类号： G08B21/00 , G08B23/00 , G01R19/00 , G01N27/416 , G01R11/63 , G01R31/02 , H04M1/24 , H04W52/02
CPC分类号： G01R31/025 , H04M1/24 , H04W52/0258 , H04W52/0261 , Y02D70/142 , Y02D70/144 , Y02D70/164
摘要： A method for detecting current leakage of electronic components in an electronic device determines a target electronic component that needs to be analyzed for current leakage in response to a user selection. The target electronic component is controlled to enter into a power-off state, and a first current value of the electronic device is acquired from a digital power supply. The target electronic component is activated into a working state, and then is controlled to enter into a sleep state. A second current value of the electronic device is acquired from the digital power supply. It is determined that the current leakage is occurring in the target electronic component, if a first difference between the second current value and the first current value is more than a predetermined value.
摘要翻译：一种用于检测电子设备中的电子元件的电流泄漏的方法，用于响应用户选择确定需要分析电流泄漏的目标电子元件。控制目标电子部件进入断电状态，从数字电源获取电子设备的第一电流值。目标电子部件被激活成工作状态，然后被控制进入睡眠状态。从数字电源获取电子设备的第二电流值。如果第二电流值和第一电流值之间的第一差大于预定值，则确定目标电子部件中发生电流泄漏。

20. 发明授权

US08918628B2 Electronic device and method for starting applications in the electronic device 有权
标题翻译：用于在电子设备中启动应用的电子设备和方法
公开(公告)号：US08918628B2
公开(公告)日：2014-12-23
申请号：US13310714
申请日：2011-12-03
申请人： Jie Sun
发明人： Jie Sun
IPC分类号： G06F9/00 , G06F9/445 , H04M1/725
CPC分类号： G06F9/445 , H04M1/72522 , H04M1/72566
摘要： An electronic device sets run types and startup information for applications within the electronic device, where each run type is associated with a signal triggered by a hardware component of the electronic device and the startup information of each application comprises a run type and a starting time of the application. In response to detecting a signal triggered by a hardware component of the electronic device, and having an application having a run type associated with the signal, the electronic device further determines if a time of triggering the signal accords with a starting time of the application. The application is started if the time of triggering the signal accords with the starting time of the application.
摘要翻译：电子设备设置电子设备内的应用的运行类型和启动信息，其中每个运行类型与由电子设备的硬件组件触发的信号相关联，并且每个应用的启动信息包括运行类型和开始时间应用程序。响应于检测到由电子设备的硬件组件触发并且具有与该信号相关联的运行类型的应用的信号，电子设备还确定触发信号的时间是否符合应用的开始时间。如果触发信号的时间符合应用程序的启动时间，应用程序将启动。

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