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11. 发明申请

US20060138933A1 Electron emission display 失效
标题翻译：电子发射显示
公开(公告)号：US20060138933A1
公开(公告)日：2006-06-29
申请号：US11291101
申请日：2005-11-29
申请人： Seung Yoo , Jong Choi , Zin Park , Soo Lee , Jung Kang , Su Lee
发明人： Seung Yoo , Jong Choi , Zin Park , Soo Lee , Jung Kang , Su Lee
IPC分类号： H01J1/62 , H01J63/04
CPC分类号： H01J29/085 , H01J31/127
摘要： An electron emission display comprising an electron collector or metal member is provided. The electron emission display comprises an electron emission substrate comprising at least one electron emission device and an image forming substrate comprising at least one emission region and at least one non-emission region. Images are formed in the emission regions by the collision of electrons emitted from the electron emission devices with the emission regions. The image forming substrate further comprises a metal layer positioned on at least the emission regions, and at least one electron collector positioned in the non-emission region. The electron collector may comprise first and second ends, wherein the first end is attached to the image forming substrate and the second end faces the electron emission substrate. The electron collector stabilizes the metal layer and fluorescent layers, thereby reducing arc and maintaining uniform brightness by re-directing scattered electrons toward the fluorescent layers.
摘要翻译：提供了包括电子收集器或金属构件的电子发射显示器。电子发射显示器包括包括至少一个电子发射器件和包括至少一个发射区域和至少一个非发射区域的成像衬底的电子发射衬底。通过与电子发射装置发射的电子与发射区域的碰撞，在发射区域中形成图像。图像形成基板还包括位于至少发射区域上的金属层和位于非发射区域中的至少一个电子收集器。电子收集器可以包括第一端和第二端，其中第一端附着到成像衬底上，第二端面向电子发射衬底。电子收集器稳定金属层和荧光层，从而通过将散射电子重新引向荧光层来减少电弧并保持均匀的亮度。

12. 发明申请

US20060113890A1 Electron emission display 失效
公开(公告)号：US20060113890A1
公开(公告)日：2006-06-01
申请号：US11264739
申请日：2005-10-31
申请人： Seung Yoo , Jong Choi , Zin Park , Soo Lee , Jung Kang , Su Lee
发明人： Seung Yoo , Jong Choi , Zin Park , Soo Lee , Jung Kang , Su Lee
IPC分类号： H01J63/04 , H01J1/62
CPC分类号： H01J31/123
摘要： An electron emission display including a first substrate having at least one electron emission device and a second substrate opposite the first substrate. The second substrate is formed with an effective region and a non-effective region. The effective region includes a fluorescent layer for emitting light by collision with electrons emitted from the electron emission device. The non-effective region includes a region in which a light-shielding layer has a transparent conductive layer and a metal layer. The transparent conductive layer is formed in the effective region where the fluorescent layer is absent. The second substrate improves the brightness of light emitted from the fluorescent layer and prevents a power supply layer, to which a high voltage is applied, from being damaged, because the transparent conductive layer is not formed under the effective region.

13. 发明申请

US20050133807A1 Nitride semiconductor light emitting device 有权
标题翻译：氮化物半导体发光器件
公开(公告)号：US20050133807A1
公开(公告)日：2005-06-23
申请号：US10853236
申请日：2004-05-26
申请人： Young Park , Hyo Cho , Seung Yoo , Kun Ko
发明人： Young Park , Hyo Cho , Seung Yoo , Kun Ko
IPC分类号： H01L29/06 , H01L33/32 , H01L33/38 , H01L33/42 , H01L33/62
CPC分类号： H01L33/382 , H01L24/45 , H01L2224/45 , H01L2924/00011 , H01L2924/00014 , H01L2924/01015 , H01L2924/12041 , H01L2924/00 , H01L2224/48 , H01L2224/45099 , H01L2224/43 , H01L2924/01006
摘要： Disclosed is a nitride semiconductor LED having a light emitting structure. In the light emitting structure, an n-doped semiconductor layer has a first region and a second region surrounding the first region on a top thereof, an active layer is formed on the second region of the n-doped semiconductor layer, and a p-doped nitride semiconductor layer is formed on the active layer. A p-electrode is formed on the p-doped semiconductor layer. An n-electrode is formed on the first region of the n-doped nitride semiconductor layer.
摘要翻译：公开了具有发光结构的氮化物半导体LED。在发光结构中，n掺杂半导体层在其顶部具有第一区域和围绕第一区域的第二区域，在n掺杂半导体层的第二区域上形成有源层，掺杂氮化物半导体层形成在有源层上。在p掺杂半导体层上形成p电极。在n掺杂氮化物半导体层的第一区域上形成n电极。

14. 发明申请

US20050133795A1 High power flip chip LED 失效
标题翻译：大功率倒装芯片LED
公开(公告)号：US20050133795A1
公开(公告)日：2005-06-23
申请号：US10852437
申请日：2004-05-25
申请人： Young Park , Hun Hahm , Seung Yoo
发明人： Young Park , Hun Hahm , Seung Yoo
IPC分类号： H01L27/15 , H01L29/08 , H01L33/06 , H01L33/10 , H01L33/20 , H01L33/32 , H01L33/40 , H01L33/62
CPC分类号： H01L27/156 , H01L33/08
摘要： A high power flip chip LED has an n-doped semiconductor layer formed on the sapphire substrate, with a plurality of first regions and a second region of intersecting lines for separating the first regions from each other. P-doped semiconductor layers are on the first regions of the n-doped semiconductor layer to form mesa structures. At least one pair of diagonal corners of the respective mesa structures are rounded inward to form first basins between adjacent inward-rounded corners. First metal layers are on the mesa structures in a same configuration. A second metal layer is on the second region of the n-doped semiconductor layer. First ohmic contacts are on the first metal layers. Second ohmic contacts are on the second metal layer in the first basins. The LED can prevent the current channeling to increase the luminous area while equalizing the current density area thereby generating high brightness light.
摘要翻译：高功率倒装芯片LED具有形成在蓝宝石衬底上的n掺杂半导体层，具有多个第一区域和用于将第一区域彼此分离的相交线的第二区域。 P掺杂半导体层在n掺杂半导体层的第一区上，以形成台面结构。相应台面结构的至少一对对角线向内倒圆，以在相邻的内圆角之间形成第一盆。第一金属层在相同构型的台面结构上。第二金属层位于n掺杂半导体层的第二区上。第一个欧姆接触位于第一个金属层上。第二个欧姆接触位于第一个盆地的第二个金属层上。 LED可以防止电流通道增加发光面积，同时均衡电流密度区域，从而产生高亮度光。

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