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    • 16. 发明申请
    • HIGH SPEED LASER SCANNING SYSTEM FOR SILICON SOLAR CELL FABRICATION
    • 用于硅太阳能电池制造的高速激光扫描系统
    • US20130052768A1
    • 2013-02-28
    • US13589922
    • 2012-08-20
    • James M. GeeJeffrey L. Franklin
    • James M. GeeJeffrey L. Franklin
    • H01L31/18
    • B23K26/0838B23K26/0622H01L31/0463Y02E10/52
    • A laser scanning apparatus that uses a polygonal mirror and a beam shaper for laser drilling of holes in one or more layers during solar cell fabrication is provided. The apparatus may be used to laser drill holes in a back side passivation layer of a solar cell during back electrical contact formation. The apparatus includes the use of a polygonal mirror to improve the speed of the back electrical formation of a solar cell. The apparatus may also include the use of a beam shaper to tune the profile of the beam to prevent damage to the underlying solar cell substrate during laser drilling operations. A laser scanning module is provided which controls the speed and timing of linear movement of substrates and the operation of the laser scanning apparatus in a closed loop manner for laser drilling of material layers disposed on the substrates.
    • 提供一种激光扫描装置,其在太阳能电池制造期间使用多面镜和光束整形器在一个或多个层中激光钻孔。 该装置可用于在后电接触形成期间在太阳能电池的背侧钝化层中激光钻孔。 该装置包括使用多面镜来提高太阳能电池的背面电气形成的速度。 该装置还可以包括使用光束整形器来调整光束的轮廓,以防止在激光钻孔操作期间损坏下面的太阳能电池基板。 提供激光扫描模块,其控制基板的线性移动的速度和时间以及激光扫描装置的操作,以闭环方式激光钻孔设置在基板上的材料层。
    • 19. 发明申请
    • FRONT CONTACT SOLAR CELL MANUFACTURE USING METAL PASTE METALLIZATION
    • 前端接触太阳能电池制造使用金属气化金属化
    • US20120222736A1
    • 2012-09-06
    • US13040946
    • 2011-03-04
    • James M. GeeCharles F. Gay
    • James M. GeeCharles F. Gay
    • H01L31/0224
    • H01L31/022433Y02E10/50
    • Embodiments of the invention contemplate the formation of a high efficiency solar cell using novel methods to form metal contact structures of the solar cell device. In one embodiment, a solar cell device includes a substrate comprising a doped semiconductor material, a surface formed on the substrate having a second doped semiconductor layer having a conductivity type opposite to the first doped semiconductor material, a dielectric layer disposed on the surface of the substrate, a metal contact structure formed in the dielectric layer with a first predetermined cross sectional area, and a metal line formed on the metal contact structure with a second predetermined cross sectional area, wherein the second predetermined cross sectional area is larger than the first predetermined cross sectional area.
    • 本发明的实施例考虑使用新型方法形成太阳能电池器件的金属接触结构来形成高效太阳能电池。 在一个实施例中,太阳能电池器件包括包括掺杂半导体材料的衬底,在衬底上形成的表面具有与第一掺杂半导体材料相反的导电类型的第二掺杂半导体层的表面, 基板,形成在具有第一预定横截面积的电介质层中的金属接触结构,以及形成在具有第二预定横截面积的金属接触结构上的金属线,其中第二预定横截面积大于第一预定横截面积 横截面面积。