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11. 发明授权

US5647917A Epitaxy for growing compound semiconductors and an InP substrate for epitaxial growth 失效
标题翻译：用于生长化合物半导体的外延和用于外延生长的InP衬底
公开(公告)号：US5647917A
公开(公告)日：1997-07-15
申请号：US525423
申请日：1995-09-07
申请人： Kazuhiko Oida , Ryusuke Nakai
发明人： Kazuhiko Oida , Ryusuke Nakai
IPC分类号： C30B25/18 , C30B23/02 , C30B25/02 , C30B29/40 , H01L21/205 , H01L29/12
CPC分类号： C30B23/02 , C30B25/02 , C30B29/40 , Y10S117/902
摘要： When compound semiconductor films are grown on an InP wafer having a surface near a (100) orientation hillocks tend to arise on the films. Off-angle wafers have been adopted for substrates in order to suppress the occurrence of hillocks. The off-angle .THETA. from a (100) plane, however, is not the sole factor for determing wheather hillocks will be formed on the film. There is a concealed parameter which determines the generation of hillocks. What induces hillocks on the growing film are the defects on the substrate itself. No hillocks originate on portions of the film that correspond to the portions of the InP wafer without dislocations. The role of the off-angle .THETA. of the substrate is preventing the influence of the dislocations from transmitting to the films. A smaller density D of the defects on the substrate allows a smaller off-angle .THETA. for suppressing the hillocks from arising. A larger density D of the defects demands a larger off-angle for the substrate so as to prevents the hillocks from originating. An inequality .THETA..ltoreq.1.times.10.sup.-3 D.sup.1/2 allows calculation of the off-angle .THETA. for preventing hillocks. More precisely, the inequlity is expressed as .THETA..ltoreq.1.26.times.10.sup.-3 D.sup.1/2.
摘要翻译：当化合物半导体膜在具有接近（100）取向的表面的InP晶片上生长时，倾向于在膜上产生小丘。为了抑制小丘的发生，已经采用偏角晶片作为基板。然而，来自（100）平面的偏角THETA不是确定电影上形成的小丘的唯一因素。有一个隐藏的参数决定了小丘的产生。在生长中的薄膜上引起小丘的缺陷是底物本身的缺陷。没有小丘起源于对应于InP晶片的部分而没有位错的部分薄膜。衬底的斜角THETA的作用是防止位错对膜的传输的影响。衬底上缺陷的较小密度D允许较小的偏角THETA用于抑制小丘的产生。缺陷的较大密度D需要较大的基板偏离角度，以防止小丘起源。不等式THETA

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