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11. 发明申请

US20050157222A1 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20050157222A1
公开(公告)日：2005-07-21
申请号：US11032135
申请日：2005-01-11
申请人： Hideki Tanaka , Ichio Yudasaka , Masami Miyasaka
发明人： Hideki Tanaka , Ichio Yudasaka , Masami Miyasaka
IPC分类号： H01L21/768 , G02F1/1333 , G02F1/136 , G02F1/1362 , H01L21/316 , H01L29/786
CPC分类号： G02F1/136227 , G02F1/133345
摘要： A simple method of manufacturing a semiconductor device including a thick and dense insulator layer having a uniform film thickness includes forming the insulator layer by repeatedly applying a liquid material to a conductive layer plural times.
摘要翻译：制造包括具有均匀膜厚度的厚而致密的绝缘体层的半导体器件的简单方法包括通过重复地将液体材料多次施加到导电层来形成绝缘体层。

12. 发明授权

US07524718B2 Method for manufacturing photoelectric transducer, and electronic apparatus 失效
标题翻译：光电传感器制造方法及电子设备
公开(公告)号：US07524718B2
公开(公告)日：2009-04-28
申请号：US11374119
申请日：2006-03-14
申请人： Masahiro Furusawa , Ichio Yudasaka , Hideki Tanaka , Tsutomu Miyamoto , Hideo Shimamura
发明人： Masahiro Furusawa , Ichio Yudasaka , Hideki Tanaka , Tsutomu Miyamoto , Hideo Shimamura
IPC分类号： H01L21/8238
CPC分类号： H01L31/077 , H01L31/1872 , H01L31/202 , Y02E10/50 , Y02P70/521
摘要： A method for manufacturing a photoelectric transducer, comprising: forming a first electrode on a substrate; forming a first conductivity-type semiconductor layer on the first electrode; forming an I type semiconductor layer on the first conductivity-type semiconductor layer; forming on the I type semiconductor layer a second conductivity-type semiconductor layer that is different from the first conductivity-type; and forming a second electrode on the second conductivity-type semiconductor layer, wherein the forming of the I type semiconductor layer includes: forming a precursor film of the I type semiconductor layer on the first conductivity-type semiconductor layer by arranging droplets containing a silicon compound in an island shape; and converting the precursor film into the I type semiconductor layer by carrying out heat treatment or photoirradiation treatment to the precursor film.
摘要翻译：一种光电转换器的制造方法，包括：在基板上形成第一电极; 在所述第一电极上形成第一导电型半导体层; 在所述第一导电型半导体层上形成I型半导体层; 在所述I型半导体层上形成与所述第一导电型不同的第二导电型半导体层; 以及在所述第二导电型半导体层上形成第二电极，其中所述I型半导体层的形成包括：通过布置含有硅化合物的液滴，在所述第一导电型半导体层上形成所述I型半导体层的前体膜在一个岛屿形状; 并通过对前体膜进行热处理或光照射处理将前体膜转变成I型半导体层。

13. 发明授权

US07510093B2 Method of manufacturing a wiring substrate, method of manufacturing an electro-optical device, method of manufacturing an electronic apparatus 失效
标题翻译：布线基板的制造方法，电光装置的制造方法，电子设备的制造方法
公开(公告)号：US07510093B2
公开(公告)日：2009-03-31
申请号：US11200162
申请日：2005-08-10
申请人： Takashi Aoki , Takashi Masuda , Hideki Tanaka , Ichio Yudasaka
发明人： Takashi Aoki , Takashi Masuda , Hideki Tanaka , Ichio Yudasaka
IPC分类号： H01B13/00 , H01L21/302
CPC分类号： H01L21/32139 , G02B6/43 , H01L21/28123 , H01L27/1292 , H05K3/061 , H05K2203/013
摘要： An etching method of the invention includes arranging droplets including a film-forming material on a substrate, drying each of the droplets to form a dry film having a width smaller than the diameter of each droplet at the time of the arrangement, and performing etching while using the dry film as an etching protective film.
摘要翻译：本发明的蚀刻方法包括将包含成膜材料的液滴布置在基板上，干燥每个液滴以形成宽度小于布置时每个液滴的直径的干膜，并进行蚀刻，同时使用干膜作为蚀刻保护膜。

14. 发明授权

US07265021B2 Alignment method, method for manufacturing a semiconductor device, substrate for a semiconductor device, electronic equipment 有权
标题翻译：对准方法，半导体装置的制造方法，半导体装置用基板，电子设备
公开(公告)号：US07265021B2
公开(公告)日：2007-09-04
申请号：US11016709
申请日：2004-12-21
申请人： Ichio Yudasaka , Hideki Tanaka
发明人： Ichio Yudasaka , Hideki Tanaka
IPC分类号： H01L21/76
CPC分类号： H01L29/66757 , H01L23/544 , H01L27/1292 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
摘要： Aspects of the invention can provide an alignment method that is preferably applicable when manufacturing equipments by liquid-phase processing. The alignment method in a device manufacturing process can include forming of a functional film on a substrate by liquid-phase processing, forming an alignment mark on the substrate on which the functional film is formed so as to make a pattern of the alignment mark appear on a film that is formed after forming the functional film, and aligning the film that is formed after forming the functional film by using the alignment mark.
摘要翻译：本发明的方面可以提供一种当通过液相处理制造设备时优选的对准方法。装置制造工序中的取向方法可以包括通过液相处理在基板上形成功能膜，在其上形成有功能膜的基板上形成对准标记，使得对准标记的图案出现在在形成功能膜之后形成的膜，并且通过使用对准标记使在形成功能膜之后形成的膜对准。

15. 发明申请

US20060213547A1 Photoelectric conversion device, image display, method of manufacturing photoelectric conversion device, and method of manufacturing image display 有权
标题翻译：光电转换装置，图像显示装置，光电转换装置的制造方法以及图像显示装置的制造方法
公开(公告)号：US20060213547A1
公开(公告)日：2006-09-28
申请号：US11364000
申请日：2006-03-01
申请人： Hideki Tanaka , Ichio Yudasaka , Masahiro Furusawa , Tsutomu Miyamoto , Tatsuya Shimoda
发明人： Hideki Tanaka , Ichio Yudasaka , Masahiro Furusawa , Tsutomu Miyamoto , Tatsuya Shimoda
IPC分类号： H02N6/00
CPC分类号： H01L31/125 , H01L31/02167 , H01L31/03921 , H01L31/046 , H01L31/075 , H01L31/202 , Y02E10/50 , Y02P70/521
摘要： A photoelectric conversion device includes a plurality of photoelectric conversion regions disposed over a substrate, and a colored region disposed among the photoelectric conversion regions over the substrate, the colored region forming an image over the substrate.
摘要翻译：光电转换装置包括设置在基板上的多个光电转换区域和设置在基板上的光电转换区域之间的着色区域，着色区域在基板上形成图像。

16. 发明授权

US07647505B2 Recording medium, recording medium reading/writing apparatus, and method of using recording medium 失效
标题翻译：记录介质，记录介质读/写装置和使用记录介质的方法
公开(公告)号：US07647505B2
公开(公告)日：2010-01-12
申请号：US10384542
申请日：2003-03-11
申请人： Ichio Yudasaka
发明人： Ichio Yudasaka
IPC分类号： G06F21/00
CPC分类号： G06K19/0719 , G06K19/07 , G06K19/07354 , G07C9/00087 , G11B20/00086 , G11B20/00152 , G11B20/00173 , G11B20/0021 , G11B20/1215 , G11B2020/10546 , G11B2220/60
摘要： The current society can be referred to as a card society, since people can use various types of cards for a variety of applications. However, card users must always carry a number of cards depending upon the application, and must use different cards according to the purpose, which can bother such users. A memory of an IC chip of an IC card includes a fingerprint information area to verify the identity of a card owner, a personal information area in which personal information of the card owner is classified and recorded with different security levels set up, a company information area in which each company writes information of the company using an “encryption key” unique to the company, and a public organization information area in which each public organization writes information of the public organization using an “encryption key” unique to the public organization.
摘要翻译：目前的社会可以称为卡片社会，因为人们可以使用各种类型的卡片进行各种应用。然而，卡用户必须始终携带多个卡片，这取决于应用，并且必须根据目的使用不同的卡，这可能会扰乱这些用户。 IC卡的IC芯片的存储器包括用于验证卡所有者的身份的指纹信息区域，其中分配并记录具有不同安全级别的卡所有者的个人信息的个人信息区域，公司信息每个公司使用公司独有的“加密密钥”写入公司信息的区域，以及公共组织信息区域，其中每个公共组织使用公共组织特有的“加密密钥”来写入公共组织的信息。

17. 发明授权

US07364939B2 Active matrix display device 有权
标题翻译：主动矩阵显示装置
公开(公告)号：US07364939B2
公开(公告)日：2008-04-29
申请号：US11071312
申请日：2005-03-04
申请人： Ichio Yudasaka
发明人： Ichio Yudasaka
IPC分类号： H01L21/00 , H01L51/40 , B05D5/00 , B05D7/00
CPC分类号： H01L27/3246 , H01L27/3211 , H01L27/3276 , H01L51/0005 , H01L51/5203 , H01L51/5284
摘要： In order to provide an active matrix display device in which a thick insulating film is preferably formed around an organic semiconductive film of a thin film luminescent device without damaging the thin film luminescent device, the active matrix display device is provided with a bank layer (bank) along a data line (sig) and a scanning line (gate) to suppress formation of parasitic capacitance in the data line (sig), in which the bank layer (bank) surrounds a region that forms the organic semiconductive film of the thin film luminescent device by an ink-jet process. The bank layer (bank) includes a lower insulating layer formed of a thick organic material and an upper insulating layer of an organic material which is deposited on the lower insulating layer and has a smaller thickness so as to avoid contact of the organic semiconductive film with the upper insulating layer.
摘要翻译：为了提供一种有源矩阵显示装置，其中优选在薄膜发光装置的有机半导体膜周围形成厚的绝缘膜，而不损坏薄膜发光装置，有源矩阵显示装置设有银行层）沿着数据线（sig）和扫描线（gate），以抑制数据线（sig）中的寄生电容的形成，其中堤层（堤）围绕形成薄膜的有机半导体膜的区域发光装置。堤层（堤）包括由厚的有机材料形成的下绝缘层和沉积在下绝缘层上并具有较小厚度的有机材料的上绝缘层，以避免有机半导体膜与上绝缘层。

18. 发明授权

US07273801B2 Method of forming thin film patterning substrate including formation of banks 有权
标题翻译：包括形成堤的薄膜构图衬底的形成方法
公开(公告)号：US07273801B2
公开(公告)日：2007-09-25
申请号：US11094692
申请日：2005-03-31
申请人： Shunichi Seki , Hiroshi Kiguchi , Ichio Yudasaka , Hiroo Miyajima
发明人： Shunichi Seki , Hiroshi Kiguchi , Ichio Yudasaka , Hiroo Miyajima
IPC分类号： H01L21/36
CPC分类号： H05B33/22 , G02B5/201 , H01L27/322 , H01L27/3246 , H01L51/0005 , H01L51/0014 , H01L51/5284 , H01L2251/558 , H05B33/10 , Y10T428/24802
摘要： Display devices such as EL elements or LED elements, are formed from thin film elements having banks of prescribed height and a thin film layer formed by an ink jet method in areas to be coated that are partitioned by those banks. The banks may be formed of an organic material on a bank formation surface configured of an inorganic material, plasma treatment is performed under conditions that the induction gas is fluorine-based and that fluorine is present excessively, and the areas enclosed by the banks subjected to surface treatment are filled with the liquid thin film material to form the thin film layer or layers.
摘要翻译：诸如EL元件或LED元件的显示装置由具有规定高度的堤的薄膜元件形成，并且通过喷墨法形成由被这些堤分隔的被涂覆区域的薄膜层。堤可以由无机材料构成的堤岸形成面上的有机材料形成，等离子体处理是在感应气体为氟基的情况下进行的，氟的存在过度，并且被堤岸包围的区域用液体薄膜材料填充表面处理以形成薄膜层。

19. 发明授权

US07179733B2 Method of forming contact holes and electronic device formed thereby 有权
标题翻译：形成接触孔的方法和由此形成的电子器件
公开(公告)号：US07179733B2
公开(公告)日：2007-02-20
申请号：US10795366
申请日：2004-03-09
申请人： Mitsuru Sato , Ichio Yudasaka
发明人： Mitsuru Sato , Ichio Yudasaka
IPC分类号： H01L21/4763
CPC分类号： H01L29/66757 , H01L21/76802 , H01L29/41733 , H01L29/42384 , H01L29/458 , H01L29/4908
摘要： In a method of forming contact holes without using a vacuum device, a resist film at positions corresponding to contact hole forming regions above a source region 16, a drain region 18 and a gate electrode 34 of a polysilicon film 14, is exposed and developed to form mask pillars 40. Then a liquid insulating material is applied onto the whole surface of a glass substrate 10 except for the mask pillars 40, to form an insulating layer 42. Next the mask pillars 40 are removed by ashing, and an insulating layer 42, second contact holes 44 and first contact holes 28 which pass through a gate insulating film 26 are formed.
摘要翻译：在不使用真空装置的情况下形成接触孔的方法中，在与多晶硅膜14的源极区域16，漏极区域18和栅极电极34之上的接触孔形成区域对应的位置处的抗蚀剂膜被曝光并显影成形成面具柱40。然后将液体绝缘材料施加到除了掩模柱40之外的玻璃基板10的整个表面上，以形成绝缘层42。接下来，通过灰化除去掩模柱40，并且形成通过栅极绝缘膜26的绝缘层42，第二接触孔44和第一接触孔28。

20. 发明申请

US20060188648A1 Method of forming a coated film, method of forming an electronic device, and method of manufacturing an electron emission element 有权
公开(公告)号：US20060188648A1
公开(公告)日：2006-08-24
申请号：US11322231
申请日：2006-01-03
申请人： Ichio Yudasaka
发明人： Ichio Yudasaka
IPC分类号： B05D5/12
CPC分类号： H01J9/027 , H01J2201/3165
摘要： A slit forming process with respect to a coated film, includes: forming a step pattern having an end part on a substrate; coating a liquid material for forming a coated film on the substrate in the manner of covering at least the end part of the step pattern; and forming the coated film by drying the coated liquid material, together with forming a slit at a position corresponding to the end part of the step pattern.

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