会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 12. 发明授权
    • Resist composition
    • 抗蚀组成
    • US06245478B1
    • 2001-06-12
    • US09398998
    • 1999-09-17
    • Yasunori UetaniIchiki Takemoto
    • Yasunori UetaniIchiki Takemoto
    • G03F7023
    • G03F7/0045G03F7/0085G03F7/0226G03F7/038G03F7/039Y10S430/121
    • A resist composition exhibiting an improved profile performance without impairing the resolution, the sensitivity, etc. which comprises a binder component; a radiation-sensitive component; and a succinimide compound represented by the following formula (I): wherein Q1 represents an alkyl group which may be optionally substituted with alkoxy, halogen or nitro, an alicyclic hydrocarbon residue, an aryl group, or an aralkyl group; and Q2, which may be the same as or different from Q1, represents hydrogen, an alkyl group which may be optionally substituted with alkoxy, halogen or nitro, an alicyclic hydrocarbon residue, an aryl group, or an aralkyl group.
    • 抗蚀剂组合物,其表现出改进的轮廓性能,而不损害包括粘结剂成分的分辨率,灵敏度等; 辐射敏感组件; 和由下式(I)表示的琥珀酰亚胺化合物:其中Q1表示可任选被烷氧基,卤素或硝基取代的烷基,脂环族烃残基,芳基或芳烷基; 和可以与Q1相同或不同的Q2表示氢,可以任选被烷氧基,卤素或硝基取代的烷基,脂环族烃残基,芳基或芳烷基。
    • 14. 发明授权
    • Herbicidal compositions and methods employing urea derivatives
    • 使用尿素衍生物的除草组合物和方法
    • US4309212A
    • 1982-01-05
    • US952775
    • 1978-10-19
    • Ichiki TakemotoSeizo SumidaRyo YoshidaKatsuzo Kamoshita
    • Ichiki TakemotoSeizo SumidaRyo YoshidaKatsuzo Kamoshita
    • A01N47/30C07C275/34C07C275/64
    • C07C275/64A01N47/30C07C275/34
    • Novel N'-phenyl-N-methylurea derivatives of the formula: ##STR1## wherein R.sub.1 is a hydrogen atom, a methyl group or a methoxy group, R.sub.2 is a hydrogen atom or a lower alkyl group, R.sub.3, which may be the same or different, is a halogen atom, a lower alkyl group, a lower alkoxy group, a lower alkylthio group or a trifluoromethyl group, n is an integer of 0 to 5, X is a hydrogen atom or a halogen atom, Y is an oxygen atom or a sulfur atom and Z is a straight or branched C.sub.1 -C.sub.8 alkylene group which may have no less than one atom of oxygen and/or sulfur at the terminal of and/or inside the carbon chain, which shows a pronounced herbicidal activity against a wide variety of weeds in the cultivation of crop plants as well as a notable fungicidal activity against a wide variety of phytopathogenic fungi causing plant diseases to crop plants without any material toxicity to mammals and fish or any chemical injury to said crop plants.
    • 新颖的下式的N-苯基-N-甲基脲衍生物:其中R1是氢原子,甲基或甲氧基,R2是氢原子或低级烷基,R3可以相同 或不同的是卤素原子,低级烷基,低级烷氧基,低级烷硫基或三氟甲基,n为0〜5的整数,X为氢原子或卤素原子,Y为氧 原子或硫原子,Z是在碳链末端和/或内部可以具有不少于一个氧原子和/或硫原子的直链或支链C 1 -C 8亚烷基,其显示出明显的除草活性 栽培作物的各种杂草以及针对各种植物病原真菌的显着的杀真菌活性,其对植物病害造成植物病害而对哺乳动物和鱼没有任何物质毒性或对所述作物的任何化学损伤。
    • 16. 发明授权
    • Polyhydric compound and chemically amplified resist composition containing the same
    • 多羟基化合物和含有它们的化学放大抗蚀剂组合物
    • US08071270B2
    • 2011-12-06
    • US12391165
    • 2009-02-23
    • Ichiki TakemotoNobuo Ando
    • Ichiki TakemotoNobuo Ando
    • G03F7/00G03F7/004C07C69/74
    • C07C309/17G03F7/0045G03F7/039Y10S430/106Y10S430/111Y10S430/114Y10S430/115
    • The present invention provides a polyhydric compound represented by the formula (I): wherein R51 to R67 each independently represent a hydrogen atom etc., at least one selected from the group consisting of R1 to R5 is a group represented by the formula (II): wherein Q1 and Q2 each independently represent a fluorine atom etc., U represents a C1-C20 divalent hydrocarbon group etc., and A+ represents an organic counter ion, and the others are hydrogen atoms or groups represented by the formula (III): wherein X1 to X4 each independently represent a hydrogen atom etc., n represents an integer of 0 to 3, W represents any one of the following groups: Z1 represents a C1-C6 alkyl group etc., and ring Y represents a C3-C20 alicyclic hydrocarbon group, and a chemically amplified resist composition containing the same.
    • 本发明提供由式(I)表示的多元化合物:其中R 51〜R 67各自独立地表示氢原子等,选自由R 1至R 5组成的组中的至少一个为由式(II)表示的基团, :其中Q1和Q2各自独立地表示氟原子等,U表示C1-C20二价烃基等,A +表示有机抗衡离子,其余为氢原子或式(III)表示的基团: 其中X1至X4各自独立地表示氢原子等,n表示0至3的整数,W表示以下基团中的任一个:Z1表示C1-C6烷基等,环Y表示C3-C20 脂环族烃基和含有它们的化学放大抗蚀剂组合物。
    • 17. 发明申请
    • RESIST PROCESSING METHOD
    • 电阻加工方法
    • US20100279226A1
    • 2010-11-04
    • US12810793
    • 2008-12-22
    • Mitsuhiro HataYoshiyuki TakataSatoshi YamaguchiIchiki TakemotoTakayuki MiyagawaYusuke Fuji
    • Mitsuhiro HataYoshiyuki TakataSatoshi YamaguchiIchiki TakemotoTakayuki MiyagawaYusuke Fuji
    • G03F7/004G03F7/20
    • H01L21/0275G03F7/0035G03F7/0045G03F7/0046G03F7/0397G03F7/40
    • The present invention has the object of providing a method of manufacturing a resist pattern in which an extremely fine and highly accurate resist pattern can be formed which is obtained using the resist composition for forming a first resist pattern in a multi-patterning method such as a double patterning method. The resist processing method comprising; forming a first resist film by applying a first resist composition onto a substrate and drying, the first resist composition comprising a resin (A), a photo acid generator (B) and a cross-linking agent (C), the resin (A) having an acid-labile group, being insoluble or poorly soluble in alkali aqueous solution but of being rendered soluble in alkali aqueous solution through the action of an acid; prebaking; exposure processing; post-exposure baking; developing; hard-baking the first resist pattern; and obtaining a second resist film; pre-baking; exposure processing; post-exposure baking; developing to obtain a second resist pattern.
    • 本发明的目的是提供一种制造抗蚀剂图案的方法,其中可以形成极细和高精度的抗蚀剂图案,该抗蚀剂图案是使用多图案化方法中形成第一抗蚀剂图案的抗蚀剂组合物获得的, 双重图案化方法 抗蚀剂处理方法包括: 通过将第一抗蚀剂组合物施加到基材上并干燥来形成第一抗蚀剂膜,所述第一抗蚀剂组合物包含树脂(A),光酸产生剂(B)和交联剂(C),树脂(A) 具有酸不稳定基团,在碱性水溶液中不溶或难溶,但通过酸的作用使其溶于碱水溶液中; 预烘烤 曝光处理; 曝光后烘烤; 发展; 硬烘烤第一抗蚀剂图案; 得到第二抗蚀膜; 预烘烤; 曝光处理; 曝光后烘烤; 显影以获得第二抗蚀剂图案。