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    • 12. 发明申请
    • Methods and Apparatus for Designing and Constructing Dual Write Memory Circuits with Voltage Assist
    • 用于设计和构造具有电压辅助的双写存储器电路的方法和装置
    • US20150003148A1
    • 2015-01-01
    • US14274518
    • 2014-05-09
    • Sundar IyerShang-Tse ChuangThu Nguyen
    • Sundar IyerShang-Tse ChuangThu Nguyen
    • G11C11/419
    • G11C11/419G11C8/16G11C11/412G11C11/413
    • Static random access memory (SRAM) circuits are used in most digital integrated circuits to store representations of data bits. To handle multiple concurrent memory requests, an efficient dual-port six transistor (6T) SRAM bit cell is proposed. The dual-port 6T SRAM cell uses independent word lines and bit lines such that the true/data side and the false/data-complement side of the SRAM bit cell may be accessed independently. Single-ended reads allow the two independent word lines and bit lines to handle two independent read operations in a single cycle using spatial domain multiplexing. Single-ended writes are enabled by adjusting the VDD power voltage supplied to a memory cell when writes are performed such that a single word line and bit line pair can be used write either a logical “0” or logical “1” into either side of the SRAM bit cell. Thus, spatial domain multiplexing with a voltage assist allows single-ended writes to handle two independent write operations to be handled in a single cycle. A write buffer may be added to the memory system to prevent conflicts and thus enable concurrent read operations and write operations in a single cycle.
    • 在大多数数字集成电路中使用静态随机存取存储器(SRAM)电路来存储数据位的表示。 为了处理多个并发存储器请求,提出了一种高效的双端口六晶体管(6T)SRAM位单元。 双端口6T SRAM单元使用独立的字线和位线,使得可以独立地访问SRAM位单元的真/数据侧和伪/数据补码侧。 单端读取允许两个独立的字线和位线使用空间域复用在单个周期中处理两个独立的读操作。 通过调整在执行写入时提供给存储单元的VDD电源电压,使得可以使用单个字线和位线对将逻辑“0”或逻辑“1”写入到 SRAM位单元。 因此,具有电压辅助的空间域复用允许单端写入来处理在单个周期中处理的两个独立的写操作。 可以将写缓冲器添加到存储器系统以防止冲突,从而在单个周期中实现并行读取操作和写入操作。
    • 16. 发明授权
    • Updating client node of computing system
    • 更新计算系统的客户端节点
    • US08464243B2
    • 2013-06-11
    • US12545724
    • 2009-08-21
    • Jean X. YuJames J. MyersGergana V. MarkovaThu NguyenDavid M. CannonKenneth E. HanniganJames P. SmithColin S. Dawson
    • Jean X. YuJames J. MyersGergana V. MarkovaThu NguyenDavid M. CannonKenneth E. HanniganJames P. SmithColin S. Dawson
    • G06F9/44G06F9/445
    • G06F8/61
    • During execution of an existing scheduling computer program on a client node, an update computer program and a self-describing automatic installation package are downloaded to the client node from a logical depot node implemented on an existing management server. Therefore, advantageously, no physical depot node or other additional computing device is needed for the client node to update itself. Execution of the update computer program is spawned on the client node from the existing scheduling computer program. As such, the update computer program inherits root access to the client node and security credentials to the management server from the scheduling computer program—advantageously, then, a user does not have to perform any laborious configuration of the client node in order to update the node. The client node ultimately updates itself using the self-describing automatic installation package, which includes all the information needed for the client node to update itself.
    • 在客户机节点上执行现有的调度计算机程序期间,将更新计算机程序和自描述自动安装包从在现有管理服务器上实现的逻辑仓库节点下载到客户端节点。 因此,有利的是,客户机节点不需要物理站点节点或其他额外的计算设备来更新自身。 从现有的调度计算机程序在客户机节点上产生更新计算机程序的执行。 因此,更新计算机程序从调度计算机程序继承对客户端节点的根访问和对管理服务器的安全凭证 - 然后,用户不必执行客户端节点的任何费力配置,以便更新 节点。 客户端节点最终使用自描述自动安装软件包来自动更新,其中包括客户端节点自身更新所需的所有信息。
    • 19. 发明申请
    • Spatial light modulator with four transistor electrode driver
    • 具有四个晶体管电极驱动器的空间光调制器
    • US20070109021A1
    • 2007-05-17
    • US11282056
    • 2005-11-16
    • Thu Nguyen
    • Thu Nguyen
    • H03K19/094
    • G11C11/412
    • A memory cell for driving a complementary pair of electrodes associated with a micro-mirror of a spatial light modulator. The memory cell includes a first PMOS transistor, wherein a source of the first PMOS transistor is coupled to a first supply voltage. The memory cell also includes a first NMOS transistor, wherein a drain of the first NMOS transistor is coupled to a drain of the first PMOS transistor, a source of the first NMOS transistor is coupled to a second supply voltage, and a gate of the first NMOS transistor is coupled to a gate of the first PMOS transistor. The memory cell further includes a second transistor adapted to establish a conduction path between the gate of the first NMOS transistor and at least one of the first supply voltage or the second supply voltage. Moreover, the memory includes a select transistor, wherein a drain of the select transistor is coupled to the gate of the first NMOS transistor and wherein the memory cell is free from a connection to a fifth transistor.
    • 用于驱动与空间光调制器的微镜相关联的互补电极对的存储单元。 存储单元包括第一PMOS晶体管,其中第一PMOS晶体管的源极耦合到第一电源电压。 存储单元还包括第一NMOS晶体管,其中第一NMOS晶体管的漏极耦合到第一PMOS晶体管的漏极,第一NMOS晶体管的源极耦合到第二电源电压,第一NMOS晶体管的栅极 NMOS晶体管耦合到第一PMOS晶体管的栅极。 存储单元还包括适于在第一NMOS晶体管的栅极与第一电源电压或第二电源电压中的至少一个之间建立导电路径的第二晶体管。 此外,存储器包括选择晶体管,其中选择晶体管的漏极耦合到第一NMOS晶体管的栅极,并且其中存储单元没有与第五晶体管的连接。