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11. 发明专利

JP2013057112A Cylindrical sputtering target material, and wiring board and thin film transistor using the same 有权
标题翻译：圆柱形溅射靶材，使用它的接线板和薄膜晶体管
公开(公告)号：JP2013057112A
公开(公告)日：2013-03-28
申请号：JP2011196991
申请日：2011-09-09
申请人： Hitachi Cable Ltd , 日立電線株式会社
发明人： UEDA KOSHIRO , TATSUMI NORIYUKI , KOBAYASHI RYUICHI
IPC分类号： C23C14/34
摘要： PROBLEM TO BE SOLVED: To equalize the speed of sputtering a cylindrical sputtering target material from an outer peripheral surface from an inner peripheral surface thereof.SOLUTION: The cylindrical sputtering target material 20 has a cylindrical shape, and is formed from oxygen-free copper having a purity of 3N level or higher. The hardness of the target material gradually increases from the outer peripheral surface 21 to the inner peripheral surface 22, and the orientation rate of a (111) surface gradually increases from the outer peripheral surface 21 to the inner peripheral surface 22.
摘要翻译：要解决的问题：为了使圆柱形溅射靶材料从其内周面的外周面溅射的速度相等。
解决方案：圆柱形溅射靶材料20具有圆柱形形状，由纯度为3N以上的无氧铜形成。目标材料的硬度从外周面21向内周面22逐渐增加，（111）面的取向率从外周面21向内周面22逐渐增加。（C）2013，JPO＆INPIT

12. 发明专利

JP2012097359A Copper sputtering target material for tft, copper film for tft, and sputtering method 有权
标题翻译：用于TFT，铜箔的薄膜溅射靶材料和溅射方法
公开(公告)号：JP2012097359A
公开(公告)日：2012-05-24
申请号：JP2012027061
申请日：2012-02-10
申请人： Hitachi Cable Ltd , 日立電線株式会社
发明人： TONOKI TATSUYA , TATSUMI NORIYUKI , ISAKA KOICHI , MOTOTANI KATSUTOSHI , ODAKURA MASAMI
IPC分类号： C23C14/34 , C23C14/14 , H01L21/285
摘要： PROBLEM TO BE SOLVED: To provide a copper sputtering target material for a TFT which can reduce a tensile residual stress in a copper film which has been deposited even not changing a deposition condition (pressure in deposition, gas kind used for deposition or the like), and to provide a copper film for a TFT, and a sputtering method.SOLUTION: The copper sputtering target material for a TFT comprises a copper material, and has a sputtering surface which consists of oxygen-free copper consisting of copper and inevitable impurities, or a copper alloy, and wherein a (111) surface occupancy proportion to a total of (111) surface, (200) surface, (220) surface, and (311) surface is at least 15%.
摘要翻译：要解决的问题：提供一种用于TFT的铜溅射靶材料，其可以降低已沉积的铜膜中的拉伸残余应力，即使不改变沉积条件（沉积中的压力，用于沉积的气体类型或等），并提供用于TFT的铜膜和溅射方法。解决方案：TFT的铜溅射靶材料包括铜材料，并且具有由铜和不可避免的杂质构成的无氧铜或铜合金构成的溅射表面，并且其中（111）表面占有率与（111）表面，（200）表面，（220）表面和（311）表面的总数成比例至少为15％。版权所有（C）2012，JPO＆INPIT

13. 发明专利

JP2012033849A Silicon device structure, and sputtering target material used for formation thereof 有权
标题翻译：硅器件结构和用于形成的溅射靶材
公开(公告)号：JP2012033849A
公开(公告)日：2012-02-16
申请号：JP2010274852
申请日：2010-12-09
申请人： Hitachi Cable Ltd , 日立電線株式会社
发明人： TATSUMI NORIYUKI , TONOKI TATSUYA
IPC分类号： H01L29/786 , H01L21/28 , H01L21/285 , H01L21/3205 , H01L21/336 , H01L23/52
CPC分类号： C23C14/3414 , C23C14/185 , H01L29/458 , H01L29/66765
摘要： PROBLEM TO BE SOLVED: To improve the saturation mobility property of a silicon device.SOLUTION: A silicon device structure comprises: on a silicon semiconductor film, a P-doped ntype amorphous silicon film; and a wiring formed on the P-doped ntype amorphous silicon film. The wiring comprises: a silicon oxide film formed on a surface of the P-doped ntype amorphous silicon film; and a copper alloy film. The copper alloy film is formed by sputtering of copper alloy including 1 at.% or more and 5 at.% or less of Mn and 0.05 at.% or more and 1.0 at.% or less of P.
摘要翻译：要解决的问题：提高硅器件的饱和迁移率性质。解决方案：硅器件结构包括：在硅半导体膜上，P掺杂的n型非晶硅膜; 以及形成在P掺杂的n + 型非晶硅膜上的布线。所述布线包括：在所述P掺杂的非晶硅膜的表面上形成的氧化硅膜; 和铜合金膜。铜合金膜通过溅射形成，包括1％以上且5at％以下的Mn和0.05at％以上且1.0at％以下的铜合金。版权所有（C） C）2012，JPO＆INPIT

14. 发明专利

JP2011127160A Sputtering target material 有权
标题翻译：溅射目标材料
公开(公告)号：JP2011127160A
公开(公告)日：2011-06-30
申请号：JP2009284945
申请日：2009-12-16
申请人： Hitachi Cable Ltd , 日立電線株式会社
发明人： TATSUMI NORIYUKI , ISAKA KOICHI , MOTOTANI KATSUTOSHI , ODAKURA MASAMI , TONOKI TATSUYA
IPC分类号： C22C9/00 , C22F1/00 , C22F1/08 , C23C14/34
CPC分类号： C22C9/00 , C23C14/185 , C23C14/3414 , C23C14/564
摘要： PROBLEM TO BE SOLVED: To provide a sputtering target material which achieves high speed film deposition while suppressing abnormal discharge caused by sputtering in wiring film deposition by a sputtering process.
SOLUTION: The sputtering target material is made of copper alloy obtained by adding silver to oxygen-free copper of ≥4N (99.99%). The silver is added by a trace amount in such a manner that the resistivity of the film to be deposited can be equal to the resistivity of the oxygen-free copper. As the amount of the silver to be added, the range of 200 to 2,000 ppm is suitable.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种在通过溅射工艺在布线膜沉积中抑制溅射引起的异常放电的同时实现高速成膜的溅射靶材料。
解决方案：溅射靶材料由铜合金制成，通过将银添加到≥4N（99.99％）的无氧铜中而获得。通过微量添加银，使得待沉积的膜的电阻率可以等于无氧铜的电阻率。作为添加量的银，适合200〜2000ppm的范围。版权所有（C）2011，JPO＆INPIT

15. 发明专利

JP2010263033A Junction electrode structure, method of manufacturing the same, and target material 审中-公开
标题翻译：连接电极结构及其制造方法和目标材料
公开(公告)号：JP2010263033A
公开(公告)日：2010-11-18
申请号：JP2009111775
申请日：2009-05-01
申请人： Hitachi Cable Ltd , 日立電線株式会社
发明人： TATSUMI NORIYUKI , TONOKI TATSUYA
IPC分类号： H01L21/28 , H01L21/285 , H01L21/336 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To provide a junction electrode structure for forming an electrode using copper alloy having a good pattern processability and that reduces material cost and manufacturing cost, and of assuring good ohmic contact characteristics between the electrode and a semiconductor layer, and to provide a method of manufacturing the same and a target material.
SOLUTION: In a junction electrode structure 10, an electrode 2 consisting of a copper (Cu) alloy is provided on a semiconductor layer 1 consisting of an amorphous silicon (a-Si). At an interface between the semiconductor layer 1 and the electrode 2, an ohmic contact layer 3 consisting of a thermal diffusion region of the semiconductor layer 1 itself and the electrode 2 itself in the vicinity of the interface is provided.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：解决的问题：为了提供一种使用具有良好图案加工性的铜合金形成电极并且降低材料成本和制造成本并且确保电极和半导体层之间的良好的欧姆接触特性的接合电极结构，并提供其制造方法和目标材料。解决方案：在接合电极结构10中，在由非晶硅（a-Si）构成的半导体层1上设置由铜（Cu）合金构成的电极2。在半导体层1和电极2之间的界面处，提供由半导体层1本身的热扩散区域和界面附近的电极2本身构成的欧姆接触层3。版权所有（C）2011，JPO＆INPIT

16. 发明专利

JP2010037578A Oxygen-free copper sputtering target, and manufacturing method of the same 有权
标题翻译：无氧铜溅射靶及其制造方法
公开(公告)号：JP2010037578A
公开(公告)日：2010-02-18
申请号：JP2008199264
申请日：2008-08-01
申请人： Hitachi Cable Ltd , 日立電線株式会社
发明人： TATSUMI NORIYUKI , TONOKI TATSUYA , ISAKA KOICHI , OKANO MASAKI
IPC分类号： C23C14/34 , B23K20/12 , H01L21/285
摘要： PROBLEM TO BE SOLVED: To provide a large-size oxygen-free copper sputtering target capable of executing film deposition on a large substrate, coping with reduction in electric resistance of an electrode wire, and performing uniform sputtering, and to provide a method of manufacturing the same. SOLUTION: The oxygen-free copper sputtering target 1 includes a first plate 20 consisting of oxygen-free copper of purity of ≥3N, a second plate 22 consisting of the same material as that of the first plate 20, and a joined part 10 formed of the first plate 20 and the second plate 22 between the first plate 20 and the second plate 22. Each of the first plate 20, the second plate 22 and the joined part 10 has mean crystal grain size of ≥0.02 mm and ≤0.04 mm. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了提供能够在大的基板上进行膜沉积的大尺寸的无氧铜溅射靶，能够应对电极线的电阻降低，并进行均匀的溅射，并且提供制造方法解决方案：无氧铜溅射靶1包括由纯度≥3N的无氧铜构成的第一板20，由与第一板20相同的材料构成的第二板22，在第一板20和第二板22之间由第一板20和第二板22形成的部分10，第一板20，第二板22和接合部10的平均晶粒尺寸为≥0.02mm， ≤0.04mm。版权所有（C）2010，JPO＆INPIT

17. 发明专利

JP2010013678A Copper sputtering target material and sputtering method 有权
标题翻译：铜爆炸目标材料和溅射方法
公开(公告)号：JP2010013678A
公开(公告)日：2010-01-21
申请号：JP2008172718
申请日：2008-07-01
申请人： Hitachi Cable Ltd , 日立電線株式会社
发明人： TONOKI TATSUYA , TATSUMI NORIYUKI , ISAKA KOICHI , MOTOTANI KATSUTOSHI , ODAKURA MASAMI
IPC分类号： C23C14/34 , H01L21/28 , H01L21/285
CPC分类号： C23C14/3414 , C23C14/185
摘要： PROBLEM TO BE SOLVED: To provide a copper sputtering target material and a sputtering method can reduce the residual tensile stress in a deposited copper film even when the film deposition condition (the pressure during the film deposition, the kind of gas used for the film deposition, or the like) is not changed.
SOLUTION: A copper sputtering target material 10 includes a sputter surface 12 formed of a copper material including one crystal orientation plane and other crystal orientation planes. By application of accelerated predetermined inert gas ions, the one crystal orientation plane emits sputter particles with energy greater than energy of sputter particles sputtered out of the other crystal orientation planes. The occupying proportion of the one crystal orientation plane to the sum of the one crystal orientation plane and the other crystal orientation planes is ≥15%.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了提供铜溅射靶材料和溅射方法，即使当成膜条件（膜沉积期间的压力，用于膜沉积等）不改变。解决方案：铜溅射靶材料10包括由包括一个晶体取向平面和其它晶体取向面的铜材料形成的溅射表面12。通过施加加速的预定的惰性气体离子，一个晶体取向平面发射能量大于溅射颗粒溅出其它晶体取向平面的能量的溅射颗粒。一个晶体取向面与一个晶体取向面和另一个晶体取向面之和的占有比例≥15％。版权所有（C）2010，JPO＆INPIT

18. 发明专利

JP2013133491A Copper target material for sputtering and method for producing the same 有权
标题翻译：用于喷射的铜靶材料及其制造方法
公开(公告)号：JP2013133491A
公开(公告)日：2013-07-08
申请号：JP2011284330
申请日：2011-12-26
申请人： Hitachi Cable Ltd , 日立電線株式会社
发明人： TATSUMI NORIYUKI , TONOKI TATSUYA , KOBAYASHI RYUICHI , UEDA KOSHIRO
IPC分类号： C23C14/34 , B21B3/00 , H01L21/28 , H01L21/285
摘要： PROBLEM TO BE SOLVED: To obtain a high deposition rate and also to form a sputtering film comprising pure copper with low resistance on a film including a high melting point metal.SOLUTION: The copper target material for sputtering is formed from oxygen-free copper with purity of 3N or more, and an orientation rate of the surface (111) in the sputtering surface is 13-30%, the orientation rate of the surface (200) in the sputtering surface is 10-50%, and an average crystal grain size is 0.1-0.2 mm.
摘要翻译：要解决的问题：为了获得高沉积速率，并且还可以在包含高熔点金属的膜上形成包含具有低电阻的纯铜的溅射膜。解决方案：用于溅射的铜靶材料由无氧铜形成，纯度为3N以上，溅射面的表面（111）的取向率为13〜30％，溅射面的表面（200）的取向率为10〜50％，平均晶粒尺寸为0.1-0.2毫米。

19. 发明专利

JP2009079267A Sputtering target material and its manufacturing method 审中-公开
标题翻译：溅射靶材及其制造方法
公开(公告)号：JP2009079267A
公开(公告)日：2009-04-16
申请号：JP2007249935
申请日：2007-09-26
申请人： Hitachi Cable Ltd , 日立電線株式会社
发明人： TATSUMI NORIYUKI , TONOKI TATSUYA
IPC分类号： C23C14/34
摘要： PROBLEM TO BE SOLVED: To provide a sputtering target material which is composed by joining a plurality of target material pieces and can solve the following problem: when the sputtering target material is used for a sputtering process and various conductive films are deposited on a glass substrate, defective manufacture such as non-uniform film thickness of the conductive film occurs, and to provide its manufacturing method.
SOLUTION: The butted sectional shape 2 of a joined part of target material pieces 1a, 1b is formed in an assembled structure having ruggedness to be fitted with each other without any void. A sputtering target material itself is used while the assembled structures are fitted with each other without any void. In such a case, friction stir welding is not applied to a surface side (right face side) 3 being the sputtering surface, but the friction stir welding is performed from a back surface side 4 opposite to the surface side 3 to join the target material pieces 1a, 1b with each other.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供通过连接多个靶材料构成的溅射靶材料，并且可以解决以下问题：当溅射靶材料用于溅射工艺并且各种导电膜沉积在发生玻璃基板，导致膜的膜厚不均匀等有缺陷的制造，并提供其制造方法。解决方案：目标材料片1a，1b的接合部分的对接截面形状2形成为具有难以彼此配合的凹凸的组装结构，没有任何空隙。使用溅射靶材料本身，而组装的结构彼此配合而没有任何空隙。在这种情况下，不将溅射面的表面侧（右面侧）3施加摩擦搅拌焊接，而是从与表面侧3相反的背面侧4进行摩擦搅拌接合，从而将目标材料片1a，1b彼此。版权所有（C）2009，JPO＆INPIT

20. 发明专利

JPH10302556A ALUMINIUM STABILIZED SUPERCONDUCTIVE CONDUCTOR 失效
公开(公告)号：JPH10302556A
公开(公告)日：1998-11-13
申请号：JP10973297
申请日：1997-04-25
申请人： HITACHI CABLE , SUMITOMO CHEMICAL CO
发明人： HOSONO FUMIKAZU , TATSUMI NORIYUKI , KIKUCHI KENICHI , IWAKI GENZO , MORIAI HIDESUMI , YASUDA HITOSHI , TAKAHASHI AKIHIKO
IPC分类号： C22F1/00 , C22C21/06 , C22F1/047 , H01B12/10 , H01B13/00
摘要： PROBLEM TO BE SOLVED: To provide an aluminium stabilized superconductive conductor, having high mechanical strength, and thermal and electrical stability, while maintaining lightness and miniaturization. SOLUTION: A Cu/Nb-Ti superconductive element wire 2 is manufactured by filling a pipe made of pure copper with plural copper matrix Nb-Ti superconductive wires to form a composite billet, making extrusion by hydrostatic pressure extruding, and moreover repeating age-heat-treatment and wire drawing working three times. Then the element wire 2 is stranded, producing a superconductive strand 8. The strand 8 is coated with an aluminum alloy 6 to which 10-100 ppm Mg, having a 0.2% bearing force of 4 kgf/mm or more and a residual resistant ratio of 250 or more at room temperature is added, an aluminum alloy 6 added by Si and Cu having a content of 10-120 ppm, by hot extrusion, and applying 0-30% cold working, thereby manufacturing an aluminium-stabilized superconductive conductor 10.

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