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    • 11. 发明授权
    • Material to improve image sensor yield during wafer sawing
    • 材料可以提高晶圆锯切时的图像传感器产量
    • US07071032B2
    • 2006-07-04
    • US10431275
    • 2003-05-07
    • Hung-Jen HsuYu-Kung HsiaoChih-Kung ChangSheng-Liang PanFu-Tien Weng
    • Hung-Jen HsuYu-Kung HsiaoChih-Kung ChangSheng-Liang PanFu-Tien Weng
    • H01L21/44H01L21/48H01L21/50
    • H01L21/6836H01L21/78H01L27/14683H01L2221/68327
    • A new method is provided of treating the wafer prior to the process of singulating the wafer into individual die. A first surface of the wafer over which CMOS image sensor devices have been created is coated with a layer of material that is non-soluble in water. The wafer is attached to a tape by bringing a second surface of the wafer in contact with the tape. The wafer is singulated by approaching the first surface of the wafer and by sawing first through the layer of material that has been coated over the first surface of the wafer and by then sawing through the wafer, stopping at the surface of the tape. A thorough water rinse is applied to the surface of the singulated wafer, followed by a wafer clean applying specific chemicals for this purpose. The singulated die is now removed from the tape and further processed by applying steps of die mount, wire bonding, surrounding the die in a mold compound and marking the package.
    • 提供了一种新的方法,在将晶片分离成单独的芯片的过程之前处理晶片。 已经在其上形成CMOS图像传感器装置的晶片的第一表面涂覆有不溶于水的材料层。 通过使晶片的第二表面与带接触而将晶片附接到带。 通过接近晶片的第一表面并通过首先穿过已经涂覆在晶片的第一表面上的材料层,然后通过晶片锯切,停止在带的表面,将晶片分离。 将彻底的水冲洗施加到单片晶片的表面,接着进行晶片清洁以应用特定的化学品用于此目的。 单片模具现在从胶带中取出并通过将模具安装,引线接合,将模具包围在模具化合物中并标记包装件的步骤进一步处理。
    • 16. 发明授权
    • Effective method to improve sub-micron color filter sensitivity
    • 提高亚微米滤色片灵敏度的有效方法
    • US07372497B2
    • 2008-05-13
    • US10833565
    • 2004-04-28
    • Fu-Tien WengYu-Kung HsiaoChin-Kung ChangHung-Jen HsuYi-Ming DaiChin-Chen Kuo
    • Fu-Tien WengYu-Kung HsiaoChin-Kung ChangHung-Jen HsuYi-Ming DaiChin-Chen Kuo
    • H04N5/225
    • H01L27/14685H01L27/14621H01L27/14623H01L27/14625H01L27/14627
    • An image sensor device and method for forming said device are described. The image sensor structure comprises a substrate with photodiodes, an interconnect structure formed on the substrate, a color filter layer above the interconnect structure, a first microlens array, an overcoat layer, and a second microlens array. A key feature is that a second microlens has a larger radius of curvature than a first microlens. Additionally, each first microlens and second microlens is a flat convex lens. Thus, a thicker second microlens with a short focal length is aligned above a thinner first microlens having a long focal length. A light column that includes a first microlens, a second microlens and a color filter region is formed above each photodiode. A second embodiment involves replacing a second microlens in each light column with a plurality of smaller second microlenses that focus light onto a first microlens.
    • 描述了用于形成所述装置的图像传感器装置和方法。 图像传感器结构包括具有光电二极管的衬底,形成在衬底上的互连结构,在互连结构上方的滤色器层,第一微透镜阵列,外涂层和第二微透镜阵列。 一个关键特征是第二微透镜具有比第一微透镜更大的曲率半径。 另外,每个第一微透镜和第二微透镜是平凸透镜。 因此,具有短焦距的较厚的第二微透镜在具有长焦距的较薄的第一微透镜上对准。 在每个光电二极管上方形成包括第一微透镜,第二微透镜和滤色器区域的光柱。 第二实施例涉及用多个将光聚焦到第一微透镜上的多个较小的第二微透镜替换每个光柱中的第二微透镜。
    • 18. 发明授权
    • Method to improve passivation openings by reflow of photoresist to eliminate tape residue
    • 通过光刻胶回流来改善钝化开口以消除胶带残留的方法
    • US06878642B1
    • 2005-04-12
    • US09679514
    • 2000-10-06
    • Hung-Jen HsuYu-Kung HsiaoChih-Kung ChangSheng-Liang PanKuo-Liang Lu
    • Hung-Jen HsuYu-Kung HsiaoChih-Kung ChangSheng-Liang PanKuo-Liang Lu
    • H01L21/311H01L21/31
    • H01L21/31116H01L23/3171H01L2224/11472
    • A new method to form passivation openings in the manufacture of an integrated circuit device is achieved. The passivation openings have gradually sloping sidewalls that allow a protective tape to be completely removed without leaving adhesive residue. A semiconductor substrate is provided. A passivation layer is deposited. An organic photoresist layer is deposited overlying the passivation layer. The organic photoresist layer is patterned to expose the passivation layer in areas where passivation openings are planned. The organic photoresist layer is reflowed to create gradually sloping sidewalls on the organic photoresist layer. The passivation layer is etched through to from the passivation openings. The passivation openings are thereby formed with gradually sloping sidewalls. The organic photoresist layer is stripped away. A protective tape is applied overlying the passivation layer and the passivation openings. The protective tape is removed. The gradually sloping sidewalls on the passivation openings allow the protective tape to be completely removed without leaving adhesive residue in the manufacture of the integrated circuit device.
    • 实现了在制造集成电路器件中形成钝化开口的新方法。 钝化开口具有逐渐倾斜的侧壁,其允许完全去除保护带而不留下粘合剂残留物。 提供半导体衬底。 沉积钝化层。 沉积在钝化层上的有机光致抗蚀剂层。 有机光致抗蚀剂层被图案化以在钝化开口被计划的区域中露出钝化层。 有机光致抗蚀剂层被回流以在有机光致抗蚀剂层上产生逐渐倾斜的侧壁。 从钝化开口蚀刻钝化层。 因此钝化开口由逐渐倾斜的侧壁形成。 剥离有机光致抗蚀剂层。 施加保护带覆盖钝化层和钝化开口。 取下保护胶带。 钝化开口上逐渐倾斜的侧壁允许保护带被完全去除,而不会在集成电路器件的制造中留下残留粘合剂。