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11. 发明申请

US20080166475A1 TRANSPARENT THIN FILM TRANSISTOR, AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：透明薄膜晶体管及其制造方法
公开(公告)号：US20080166475A1
公开(公告)日：2008-07-10
申请号：US11763373
申请日：2007-06-14
申请人： Jae-Kyeong Jeong , Hyun-Soo Shin , Yeon-Gon Mo
发明人： Jae-Kyeong Jeong , Hyun-Soo Shin , Yeon-Gon Mo
IPC分类号： B05D5/12
CPC分类号： H01L27/127 , H01L27/1218 , H01L27/1225 , H01L29/7869
摘要： A thin film transistor (TFT) and a method of manufacturing the same such that an ohmic contact can be formed between a semiconductor layer and a source electrode or between the semiconductor layer and a drain electrode, wherein the TFT can be applied to a plastic substrate. The TFT includes: a substrate; an active layer formed of ZnO, InZnO, ZnSnO, and/or ZnInGaO on the substrate and including a channel region, a source region, and a drain region; a gate electrode insulated from the active layer; and source and drain electrodes insulated from the gate electrode and electrically connected to the source region and the drain region, respectively, wherein the source region and the drain region of the active layer include hydrogen.
摘要翻译：薄膜晶体管（TFT）及其制造方法可以在半导体层和源电极之间或半导体层与漏电极之间形成欧姆接触，其中TFT可以应用于塑料基板。 TFT包括：基板; 在衬底上由ZnO，InZnO，ZnSnO和/或ZnInGaO形成的有源层，包括沟道区，源极区和漏极区; 与有源层绝缘的栅电极; 以及与栅电极绝缘并分别电连接到源极区和漏极区的源极和漏极，其中有源层的源极区和漏极区包括氢。

12. 发明申请

US20060267491A1 Flat panel display 有权
标题翻译：平板显示器
公开(公告)号：US20060267491A1
公开(公告)日：2006-11-30
申请号：US11439343
申请日：2006-05-24
申请人： Jae-Bon Koo , Jae-Kyeong Jeong , Hyun-Soo Shin , Yeon-Gon Mo
发明人： Jae-Bon Koo , Jae-Kyeong Jeong , Hyun-Soo Shin , Yeon-Gon Mo
IPC分类号： H01J1/62 , H01J63/04
CPC分类号： H01L27/3276 , H01L27/3265
摘要： A flat panel display that can prevent a voltage drop of a driving power and, at the same time, minimizes the characteristic reduction of electronic devices located in a circuit region where various circuit devices are located includes: a substrate; an insulating film arranged on the substrate; a pixel region including at least one light emitting diode, the pixel region arranged on the insulating film and adapted to display an image; a circuit region arranged on the insulating film and including electronic devices adapted to control signals supplied to the pixel region; and a conductive film interposed between the substrate and the insulating film in a region corresponding to the pixel region and electrically connected to one electrode of the light emitting diode.
摘要翻译：可以防止驱动电源的压降的平板显示器，并且同时使位于各种电路装置所在的电路区域中的电子设备的特征减少最小化包括：基板; 布置在所述基板上的绝缘膜; 包括至少一个发光二极管的像素区域，所述像素区域布置在所述绝缘膜上并适于显示图像; 布置在所述绝缘膜上并包括适于控制提供给所述像素区域的信号的电子装置的电路区域; 以及在与像素区域对应的区域中插入在基板和绝缘膜之间的导电膜，并且电连接到发光二极管的一个电极。

13. 发明授权

US08058645B2 Thin film transistor, display device, including the same, and associated methods 有权
标题翻译：薄膜晶体管，显示装置，包括相同的方法和相关的方法
公开(公告)号：US08058645B2
公开(公告)日：2011-11-15
申请号：US12385197
申请日：2009-04-01
申请人： Jong-Han Jeong , Jae-Kyeong Jeong , Yeon-Gon Mo , Hui-Won Yang
发明人： Jong-Han Jeong , Jae-Kyeong Jeong , Yeon-Gon Mo , Hui-Won Yang
IPC分类号： H01L29/12
CPC分类号： H01L29/7869 , H01L27/1225
摘要： A thin film transistor (TFT), including a substrate, a gate electrode on the substrate, an oxide semiconductor layer including a channel region, a source region, and a drain region, a gate insulating layer between the gate electrode and the oxide semiconductor layer, and source and drain electrodes in contact with the source and drain regions of the oxide semiconductor layer, respectively, wherein the oxide semiconductor layer has a GaInZnO (GIZO) bilayer structure including a lower layer and an upper layer, and the upper layer has a different indium (In) concentration than the lower layer.
摘要翻译：一种薄膜晶体管（TFT），包括基板，基板上的栅电极，包括沟道区，源极区和漏极区的氧化物半导体层，栅电极和氧化物半导体层之间的栅极绝缘层以及与氧化物半导体层的源极和漏极区域接触的源极和漏极，其中氧化物半导体层具有包括下层和上层的GaInZnO（GIZO）双层结构，并且上层具有不同的铟（In）浓度比下层。

14. 发明授权

US08049212B2 Thin film transistor, method of fabricating a thin film transistor and flat panel display device having the same 有权
标题翻译：薄膜晶体管，制造薄膜晶体管的方法和具有该薄膜晶体管的平板显示装置
公开(公告)号：US08049212B2
公开(公告)日：2011-11-01
申请号：US12318212
申请日：2008-12-23
申请人： Jae-Kyeong Jeong , Hyun-Soo Shin , Yeon-Gon Mo , Jong-Han Jeong
发明人： Jae-Kyeong Jeong , Hyun-Soo Shin , Yeon-Gon Mo , Jong-Han Jeong
IPC分类号： H01L33/00 , H01L21/336
CPC分类号： H01L29/7869 , H01L27/1225
摘要： A TFT includes a substrate, a transparent semiconductor layer on the substrate, the transparent semiconductor layer including zinc oxide and exhibiting a surface roughness of about 1.3 nm or less, a gate electrode on the transparent semiconductor layer, a gate insulating layer between the gate electrode and the transparent semiconductor layer, the gate insulting layer insulating the gate electrode from the transparent semiconductor layer, and source and drain electrodes on the substrate, the source and drain electrodes being in contact with the transparent semiconductor layer.
摘要翻译： TFT包括基板，在基板上的透明半导体层，包含氧化锌的表面粗糙度为1.3nm以下的透明半导体层，透明半导体层上的栅极电极，栅电极之间的栅极绝缘层并且所述透明半导体层，所述栅极绝缘层将所述栅电极与所述透明半导体层绝缘，以及所述基板上的源极和漏极，所述源极和漏极与所述透明半导体层接触。

15. 发明授权

US08003450B2 Thin film transistor, method of fabricating a thin film transistor and flat panel display device having the same 有权
标题翻译：薄膜晶体管，制造薄膜晶体管的方法和具有该薄膜晶体管的平板显示装置
公开(公告)号：US08003450B2
公开(公告)日：2011-08-23
申请号：US12318244
申请日：2008-12-23
申请人： Jae-Kyeong Jeong , Hyun-Soo Shin , Yeon-Gon Mo , Hyung-Jun Kim , Seong-Joon Lim
发明人： Jae-Kyeong Jeong , Hyun-Soo Shin , Yeon-Gon Mo , Hyung-Jun Kim , Seong-Joon Lim
IPC分类号： H01L21/00
CPC分类号： H01L29/7869 , H01L27/1225
摘要： A thin film transistor (TFT) includes a substrate, a transparent semiconductor layer on the substrate, the transparent semiconductor layer including zinc oxide and exhibiting a charge concentration of about 1×1014 atom/cm3 to about 1×1017 atom/cm3, a gate electrode on the substrate, a gate insulating layer between the gate electrode and the transparent semiconductor layer, the gate insulting layer insulating the gate electrode from the transparent semiconductor layer, and source and drain electrodes on the substrate, the source and drain electrodes being in contact with the transparent semiconductor layer.
摘要翻译：薄膜晶体管（TFT）包括基板，在基板上的透明半导体层，包含氧化锌的透明半导体层，其电荷浓度为约1×1014原子/ cm3至约1×1017原子/ cm3，栅极电极，栅电极和透明半导体层之间的栅极绝缘层，栅极绝缘层与透明半导体层绝缘，源极和漏极在基板上，源电极和漏电极接触与透明半导体层。

16. 发明授权

US07847292B2 Flat panel display 有权
公开(公告)号：US07847292B2
公开(公告)日：2010-12-07
申请号：US12591548
申请日：2009-11-23
申请人： Jae-Bon Koo , Jae-Kyeong Jeong , Hyun-Soo Shin , Yeon-Gon Mo
发明人： Jae-Bon Koo , Jae-Kyeong Jeong , Hyun-Soo Shin , Yeon-Gon Mo
IPC分类号： H01L27/14
CPC分类号： H01L27/3276 , H01L27/3265
摘要： A flat panel display that can prevent a voltage drop of a driving power and, at the same time, minimizes the characteristic reduction of electronic devices located in a circuit region where various circuit devices are located includes: a substrate; an insulating film arranged on the substrate; a pixel region including at least one light emitting diode, the pixel region arranged on the insulating film and adapted to display an image; a circuit region arranged on the insulating film and including electronic devices adapted to control signals supplied to the pixel region; and a conductive film interposed between the substrate and the insulating film in a region corresponding to the pixel region and electrically connected to one electrode of the light emitting diode.

17. 发明申请

US20100006833A1 THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME AND FLAT PANEL DISPLAY DEVICE HAVING THE SAME 有权
标题翻译：薄膜晶体管，其制造方法和具有该薄膜晶体管的平板显示器件
公开(公告)号：US20100006833A1
公开(公告)日：2010-01-14
申请号：US12393422
申请日：2009-02-26
申请人： Jae-Heung Ha , Young-Woo Song , Jong-Hyuk Lee , Jong-Han Jeong , Min-Kyu Kim , Yeon-Gon Mo , Jae-Kyeong Jeong , Hyun-Joong Chung , Kwang-Suk Kim , Hui-Won Yang , Chaun-Gi Choi
发明人： Jae-Heung Ha , Young-Woo Song , Jong-Hyuk Lee , Jong-Han Jeong , Min-Kyu Kim , Yeon-Gon Mo , Jae-Kyeong Jeong , Hyun-Joong Chung , Kwang-Suk Kim , Hui-Won Yang , Chaun-Gi Choi
IPC分类号： H01L29/12 , H01L21/04
CPC分类号： H01L29/7869
摘要： A thin film transistor, a method of manufacturing the thin film transistor, and a flat panel display device including the thin film transistor. The thin film transistor includes: a gate electrode formed on a substrate; a gate insulating film formed on the gate electrode; an activation layer formed on the gate insulating film; a passivation layer including a compound semiconductor oxide, formed on the activation layer; and source and drain electrodes that contact the activation layer.
摘要翻译：薄膜晶体管，薄膜晶体管的制造方法以及包括该薄膜晶体管的平板显示装置。薄膜晶体管包括：形成在基板上的栅电极; 形成在栅电极上的栅极绝缘膜; 形成在所述栅极绝缘膜上的活化层; 在活化层上形成包含化合物半导体氧化物的钝化层; 以及与激活层接触的源极和漏极。

18. 发明申请

US20090321731A1 THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME AND FLAT PANEL DISPLAY DEVICE HAVING THE SAME 有权
标题翻译：薄膜晶体管，其制造方法和具有该薄膜晶体管的平板显示器件
公开(公告)号：US20090321731A1
公开(公告)日：2009-12-31
申请号：US12352851
申请日：2009-01-13
申请人： Jae-Kyeong JEONG , Jong-Han Jeong , Min-Kyu Kim , Tae-Kyung Ahn , Yeon-Gon Mo , Hui-Won Yang
发明人： Jae-Kyeong JEONG , Jong-Han Jeong , Min-Kyu Kim , Tae-Kyung Ahn , Yeon-Gon Mo , Hui-Won Yang
IPC分类号： H01L31/0256 , H01L29/12 , H01L21/02 , H01L31/00
CPC分类号： H01L29/7869 , H01L29/4908 , H01L29/78696
摘要： A thin film transistor (TFT) using an oxide semiconductor as an active layer, a method of manufacturing the TFT, and a flat panel display device having the TFT include a gate electrode formed on a substrate; an active layer made of an oxide semiconductor and insulated from the gate electrode by a gate insulating layer; source and drain electrodes coupled to the active layer; and an interfacial stability layer formed on one or both surfaces of the active layer. In the TFT, the interfacial stability layer is formed of an oxide having a band gap of 3.0 to 8.0 eV. Since the interfacial stability layer has the same characteristic as a gate insulating layer and a passivation layer, chemically high interface stability is maintained. Since the interfacial stability layer has a band gap equal to or greater than that of the active layer, charge trapping is physically prevented.
摘要翻译：使用氧化物半导体作为有源层的薄膜晶体管（TFT），制造TFT的方法以及具有该TFT的平板显示装置包括形成在基板上的栅电极; 由氧化物半导体制成的有源层，并通过栅极绝缘层与栅电极绝缘; 源极和漏极耦合到有源层; 以及形成在活性层的一个或两个表面上的界面稳定层。在TFT中，界面稳定层由带隙为3.0〜8.0eV的氧化物形成。由于界面稳定层具有与栅极绝缘层和钝化层相同的特性，因此保持化学上高的界面稳定性。由于界面稳定层具有等于或大于有源层的带隙，所以物理地防止了电荷俘获。

19. 发明申请

US20090294772A1 Thin film transistor, method of manufacturing the same and flat panel display device having the same 有权
标题翻译：薄膜晶体管，其制造方法和具有该薄膜晶体管的平板显示装置
公开(公告)号：US20090294772A1
公开(公告)日：2009-12-03
申请号：US12318856
申请日：2009-01-09
申请人： Jong-Han Jeong , Kwang-Suk Kim , Jae-Kyeong Jeong , Hui-Won Yang , Yeon-Gon Mo
发明人： Jong-Han Jeong , Kwang-Suk Kim , Jae-Kyeong Jeong , Hui-Won Yang , Yeon-Gon Mo
IPC分类号： H01L33/00 , H01J1/62 , H01L21/336
CPC分类号： H01L29/7869 , H01L27/1225 , H01L27/3262 , H01L29/66969 , H01L29/78618
摘要： A thin film transistor is provided having an oxide semiconductor as an active layer, a method of manufacturing the thin film transistor and a flat panel display device having the thin film transistor. The thin film transistor includes: a gate electrode formed on a substrate; an oxide semiconductor layer isolated from the gate electrode by a gate insulating layer and including channel, source and drain regions; source and drain electrodes coupled to the source and drain regions, respectively; and an ohmic contact layer interposed between the source and drain regions and the source and drain electrodes. In the TFT, the ohmic contact layer is formed with the oxide semiconductor layer having a carrier concentration higher than those of the source and drain regions.
摘要翻译：提供具有氧化物半导体作为有源层的薄膜晶体管，制造薄膜晶体管的方法和具有薄膜晶体管的平板显示装置。薄膜晶体管包括：形成在基板上的栅电极; 通过栅极绝缘层与栅电极隔离并且包括沟道，源极和漏极区域的氧化物半导体层; 源极和漏极分别耦合到源极和漏极区域; 以及插入在源极和漏极区域以及源极和漏极之间的欧姆接触层。在TFT中，欧姆接触层与载流子浓度高于源区和漏区的氧化物半导体层形成。

20. 发明申请

US20090159879A1 Thin film transistor, method of fabricating a thin film transistor and flat panel display device having the same 有权
标题翻译：薄膜晶体管，制造薄膜晶体管的方法和具有该薄膜晶体管的平板显示装置
公开(公告)号：US20090159879A1
公开(公告)日：2009-06-25
申请号：US12318212
申请日：2008-12-23
申请人： Jae-Kyeong Jeong , Hyun-Soo Shin , Yeon-Gon Mo , Jong-Han Jeong
发明人： Jae-Kyeong Jeong , Hyun-Soo Shin , Yeon-Gon Mo , Jong-Han Jeong
IPC分类号： H01L33/00 , H01L21/336
CPC分类号： H01L29/7869 , H01L27/1225
摘要： A TFT includes a substrate, a transparent semiconductor layer on the substrate, the transparent semiconductor layer including zinc oxide and exhibiting a surface roughness of about 1.3 nm or less, a gate electrode on the transparent semiconductor layer, a gate insulating layer between the gate electrode and the transparent semiconductor layer, the gate insulting layer insulating the gate electrode from the transparent semiconductor layer, and source and drain electrodes on the substrate, the source and drain electrodes being in contact with the transparent semiconductor layer.
摘要翻译： TFT包括基板，在基板上的透明半导体层，包含氧化锌的表面粗糙度为1.3nm以下的透明半导体层，透明半导体层上的栅极电极，栅电极之间的栅极绝缘层并且所述透明半导体层，所述栅极绝缘层将所述栅电极与所述透明半导体层绝缘，以及所述基板上的源极和漏极，所述源极和漏极与所述透明半导体层接触。

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