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11. 发明授权

US06531343B1 Method of encapsulating a circuit assembly 失效
标题翻译：密封电路组件的方法
公开(公告)号：US06531343B1
公开(公告)日：2003-03-11
申请号：US09587336
申请日：2000-06-05
申请人： Kenneth Raymond Carter , Craig Jon Hawker , James Lupton Hedrick , Robert Dennis Miller , Michael Anthony Gaynes , Stephen Leslie Buchwalter
发明人： Kenneth Raymond Carter , Craig Jon Hawker , James Lupton Hedrick , Robert Dennis Miller , Michael Anthony Gaynes , Stephen Leslie Buchwalter
IPC分类号： H01L2144
CPC分类号： H01L21/563 , H01L23/293 , H01L2224/16225 , H01L2224/73203 , H01L2924/00014 , H01L2924/01019 , H01L2924/09701 , H01L2224/0401
摘要： A method of encapsulating a circuit assembly including a chip; a substrate; at least one solder joint which spans between the chip and the substrate forming an electrically conductive connection between the chip and the substrate by applying an encapsulant adjacent the solder joint, wherein the encapsulant comprises a thermoplastic polymer formed by ring opening polymerization of a cyclic oligomer.
摘要翻译：一种封装包括芯片的电路组件的方法; 底物; 在芯片和衬底之间跨越的至少一个焊点通过在焊料接头附近施加密封剂而形成芯片和衬底之间的导电连接，其中密封剂包括通过环状低聚物的开环聚合形成的热塑性聚合物。

12. 发明授权

US6111323A Reworkable thermoplastic encapsulant 失效
标题翻译：可再生热塑性密封剂
公开(公告)号：US6111323A
公开(公告)日：2000-08-29
申请号：US754
申请日：1997-12-30
申请人： Kenneth Raymond Carter , Craig Jon Hawker , James Lupton Hedrick , Robert Dennis Miller , Michael Anthony Gaynes , Stephen Leslie Buchwalter
发明人： Kenneth Raymond Carter , Craig Jon Hawker , James Lupton Hedrick , Robert Dennis Miller , Michael Anthony Gaynes , Stephen Leslie Buchwalter
IPC分类号： H01L21/56 , H01L23/29 , H01L23/31 , H01L23/28
CPC分类号： H01L21/563 , H01L23/293 , H01L2224/16225 , H01L2224/73203 , H01L2924/00014 , H01L2924/01019 , H01L2924/09701
摘要： The invention is an encapsulated circuit assembly including a chip; a substrate; at least one solder joint which spans between the chip and the substrate forming an electrically conductive connection between the chip and the substrate; and an encapsulant formed adjacent the solder joint, wherein the encapsulant comprises a thermoplastic polymer formed by ring opening polymerization of a cyclic oligomer.
摘要翻译：本发明是一种包括芯片的封装电路组件; 底物; 至少一个跨接在所述芯片和所述基板之间的焊接接头，在所述芯片和所述基板之间形成导电连接; 以及邻近所述焊接接头形成的密封剂，其中所述密封剂包括通过环状低聚物的开环聚合形成的热塑性聚合物。

13. 发明授权

US5773197A Integrated circuit device and process for its manufacture 失效
标题翻译：集成电路器件及其制造工艺
公开(公告)号：US5773197A
公开(公告)日：1998-06-30
申请号：US739134
申请日：1996-10-28
申请人： Kenneth Raymond Carter , James Lupton Hedrick , Robert Dennis Miller
发明人： Kenneth Raymond Carter , James Lupton Hedrick , Robert Dennis Miller
IPC分类号： C08G77/452 , C08L83/10 , H01L21/312 , H01L21/314 , H01L21/768 , H01L23/522 , G03C5/00
CPC分类号： H01L21/76801 , H01L21/312
摘要： The invention relates to an integrated circuit device comprising (i) a substrate; (ii) metallic circuit lines positioned on the substrate and (iii) a dielectric material positioned on the circuit lines. The dielectric material comprises the reaction product of an organic polysilica and uncondensed precursor polymer preferably terminated with an alkoxysilyl alkyl group.
摘要翻译：本发明涉及一种集成电路器件，包括：（i）衬底; （ii）位于基板上的金属电路线，和（iii）位于电路线上的电介质材料。电介质材料包括有机聚硅氧烷和未冷凝的前体聚合物的反应产物，优选用烷氧基甲硅烷基烷基封端。

14. 发明授权

US6110649A Process for manufacture of integrated circuit device 失效
标题翻译：集成电路器件制造工艺
公开(公告)号：US6110649A
公开(公告)日：2000-08-29
申请号：US974580
申请日：1997-11-19
申请人： Kenneth Raymond Carter , Craig Jon Hawker , James Lupton Hedrick , Robert Dennis Miller , Bernhard Pogge
发明人： Kenneth Raymond Carter , Craig Jon Hawker , James Lupton Hedrick , Robert Dennis Miller , Bernhard Pogge
IPC分类号： H01L21/312 , H01L21/316 , H01L21/768 , G03F7/26
CPC分类号： H01L21/02137 , H01L21/02203 , H01L21/02282 , H01L21/3122 , H01L21/31695 , H01L21/76801
摘要： The invention relates to a dielectric material and a process for forming an integrated circuit device comprising (i) a substrate; (ii) metallic circuit lines positioned on the substrate and (iii) a dielectric material positioned on the circuit lines. The dielectric material comprises condensed organic polysilica and porous particles.
摘要翻译：本发明涉及一种介电材料和一种用于形成集成电路器件的工艺，该集成电路器件包括：（i）衬底; （ii）位于基板上的金属电路线，和（iii）位于电路线上的电介质材料。介电材料包括冷凝的有机聚硅氧烷和多孔颗粒。

15. 发明授权

US07982312B2 Method for fabricating dual damascene structures using photo-imprint lithography, methods for fabricating imprint lithography molds for dual damascene structures, materials for imprintable dielectrics and equipment for photo-imprint lithography used in dual damascene patterning 有权
标题翻译：使用光刻印刷法制造双镶嵌结构的方法，用于制造用于双镶嵌结构的压印光刻模具的方法，用于可压印电介质的材料和用于双重镶嵌图案中的光刻印刷光刻设备
公开(公告)号：US07982312B2
公开(公告)日：2011-07-19
申请号：US12222000
申请日：2008-08-07
申请人： Matthew E. Colburn , Kenneth Raymond Carter , Gary M. McClelland , Dirk Pfeiffer
发明人： Matthew E. Colburn , Kenneth Raymond Carter , Gary M. McClelland , Dirk Pfeiffer
IPC分类号： H01L23/48 , G03F7/26
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00 , H01L21/76807 , H01L21/76817 , H01L2924/0002 , Y10S425/81 , Y10T428/16 , Y10T428/24851 , Y10T428/31504 , H01L2924/00
摘要： The process of producing a dual damascene structure used for the interconnect architecture of semiconductor chips. More specifically the use of imprint lithography to fabricate dual damascene structures in a dielectric and the fabrication of dual damascene structured molds.
摘要翻译：制造用于半导体芯片的互连架构的双镶嵌结构的过程。更具体地说，使用压印光刻法在电介质中制造双镶嵌结构以及制造双镶嵌结构的模具。

16. 发明授权

US08163188B2 Article with PHEMA lift-off layer and method therefor 有权
标题翻译：文章用PHEMA剥离层及其方法
公开(公告)号：US08163188B2
公开(公告)日：2012-04-24
申请号：US12062058
申请日：2008-04-03
申请人： Kenneth Raymond Carter , Sarav Bharat Jhaveri
发明人： Kenneth Raymond Carter , Sarav Bharat Jhaveri
IPC分类号： B05D3/06 , B05D5/00
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00
摘要： A method of forming a patterned functional layer on a substrate using a poly(hydroxyethyl methacrylate) lift-off layer is described. The method can be used with substrates that would not tolerate the organic solvents required for processing of known poly(methyl methacrylate) lift-off layers. When used in combination with known nanoimprint lithography and step-and-flash imprint lithography techniques, the method can be used to generate patterned functional structures with dimensions as small as five nanometers.
摘要翻译：描述了使用聚（羟乙基甲基丙烯酸酯）剥离层在基板上形成图案化功能层的方法。该方法可以与不能耐受加工已知聚（甲基丙烯酸甲酯）剥离层所需的有机溶剂的基材一起使用。当与已知的纳米压印光刻和步进和闪光压印光刻技术结合使用时，该方法可用于产生尺寸小至5纳米的图案化功能结构。

17. 发明授权

US07947801B2 Polyfluorene method 有权
标题翻译：聚芴法
公开(公告)号：US07947801B2
公开(公告)日：2011-05-24
申请号：US12062119
申请日：2008-04-03
申请人： Kenneth Raymond Carter , Sarav Bharat Jhaveri
发明人： Kenneth Raymond Carter , Sarav Bharat Jhaveri
IPC分类号： C08F6/00 , C08J3/00 , C08G61/00
CPC分类号： C08G61/02 , C09K11/06 , C09K2211/1011 , H01L51/0039 , H01L51/5012
摘要： A method of synthesizing a poly(9,9-disubstituted-fluorene) includes reacting a 9,9-disubstituted-fluorene with an alkyl lithium in the presence of a catalytic amount of a nickel amine complex. The 9,9-disubstituted-fluorene includes solubility-enhancing substituents in the 9-position and leaving groups in the 2-position and the 7-position. The product poly(9,9-disubstituted-fluorene)s are fluorescent conjugated polymers that are useful as, for example, blue light-emitting materials.
摘要翻译：合成聚（9,9-二取代 - 芴）的方法包括在催化量的镍胺络合物的存在下使9,9-二取代芴与烷基锂反应。 9,9-二取代 - 芴在9位上包括溶解度增强取代基，并将基团留在2-位和7-位。产物聚（9,9-二取代 - 芴）是可用作例如蓝色发光材料的荧光共轭聚合物。

18. 发明授权

US06730617B2 Method of fabricating one or more tiers of an integrated circuit 有权
标题翻译：制造集成电路的一层或多层的方法
公开(公告)号：US06730617B2
公开(公告)日：2004-05-04
申请号：US10132530
申请日：2002-04-24
申请人： Kenneth Raymond Carter
发明人： Kenneth Raymond Carter
IPC分类号： H01L2131
CPC分类号： H01L21/76817 , H01L21/31695 , H01L21/76838
摘要： A process for forming a portion of an integrated circuit includes placing a layer of material on a substrate, in which the material includes a polymeric composition or a precursor to a dielectric composition. The material is contacted with a stamping surface having relief structures that define a pattern, so that a patterned layer is formed as a result of the contact, which may include heating the material to mold it. A metal film or layer is then deposited onto the patterned layer. The metal can then be planarized to form a layer of an integrated circuit. A decomposable or sacrificial polymer is preferably included in the material, so that porous dielectric material is formed, thereby leading to a lower dielectric constant of the end product.
摘要翻译：用于形成集成电路的一部分的工艺包括将材料层放置在基板上，其中材料包括聚合物组合物或电介质组合物的前体。材料与具有限定图案的浮雕结构的冲压表面接触，使得由于接触而形成图案化层，其可以包括加热材料以使其成型。然后将金属膜或层沉积到图案化层上。然后可以将金属平坦化以形成集成电路的层。材料中优选包括可分解或牺牲的聚合物，从而形成多孔介电材料，从而导致最终产品的较低的介电常数。

19. 发明授权

US07837459B2 Method for fabricating dual damascene structures using photo-imprint lithography, methods for fabricating imprint lithography molds for dual damascene structures, materials for imprintable dielectrics and equipment for photo-imprint lithography used in dual damascene patterning 有权
标题翻译：使用光刻印刷法制造双镶嵌结构的方法，用于制造用于双镶嵌结构的压印光刻模具的方法，用于可压印电介质的材料和用于双重镶嵌图案中的光刻印刷光刻设备
公开(公告)号：US07837459B2
公开(公告)日：2010-11-23
申请号：US12221966
申请日：2008-08-07
申请人： Matthew E. Colburn , Kenneth Raymond Carter , Gary M. McClelland , Dirk Pfeiffer
发明人： Matthew E. Colburn , Kenneth Raymond Carter , Gary M. McClelland , Dirk Pfeiffer
IPC分类号： B29D11/00
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00 , H01L21/76807 , H01L21/76817 , H01L2924/0002 , Y10S425/81 , Y10T428/16 , Y10T428/24851 , Y10T428/31504 , H01L2924/00
摘要： The process of producing a dual damascene structure used for the interconnect architecture of semiconductor chips. More specifically the use of imprint lithography to fabricate dual damascene structures in a dielectric and the fabrication of dual damascene structured molds.
摘要翻译：制造用于半导体芯片的互连架构的双镶嵌结构的过程。更具体地说，使用压印光刻法在电介质中制造双镶嵌结构以及制造双镶嵌结构的模具。

20. 发明申请

US20090264317A1 Functionalized nanostructure, methods of manufacture thereof and articles comprising the same 审中-公开
标题翻译：官能化纳米结构体，其制造方法和包含其的制品
公开(公告)号：US20090264317A1
公开(公告)日：2009-10-22
申请号：US12421259
申请日：2009-04-09
申请人： Yuval Ofir , Vincent Martin Rotello , Brian John Jordan , Kenneth Raymond Carter
发明人： Yuval Ofir , Vincent Martin Rotello , Brian John Jordan , Kenneth Raymond Carter
IPC分类号： C40B50/14 , C40B30/00 , C40B40/04 , C40B40/06 , C40B40/10 , B29C35/08 , B32B3/00
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y30/00 , B82Y40/00 , H05K3/102 , H05K3/389 , H05K2201/0257 , H05K2203/0108 , H05K2203/0522 , Y10T428/24802
摘要： Disclosed is a method comprising disposing a functionalized patternable material on a substrate, wherein the functionalized patternable material comprises a first click chemical moiety; patterning the functionalized patternable material; and reacting the first click chemical moiety with a complementary reactant to form an functionalized patterned surface, the complementary reactant comprising a second click chemical moiety that reacts with the first click chemical moiety; the complementary reactant comprising an functional group.
摘要翻译：公开了一种方法，包括将功能化的可图案材料设置在基底上，其中所述官能化可图案材料包括第一点击化学部分; 图案化功能化图案化材料; 并且使所述第一点击化学部分与互补反应物反应以形成官能化图案化表面，所述互补反应物包含与所述第一点击化学部分反应的第二点击化学部分; 包含官能团的互补反应物。

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