专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明授权

US07915151B2 Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices 有权
标题翻译：掺杂的细长半导体，生长这样的半导体，包括这种半导体的器件和制造这样的器件
公开(公告)号：US07915151B2
公开(公告)日：2011-03-29
申请号：US11543353
申请日：2006-10-04
申请人： Charles M. Lieber , Yi Cui , Xiangfeng Duan , Yu Huang
发明人： Charles M. Lieber , Yi Cui , Xiangfeng Duan , Yu Huang
IPC分类号： H01G9/20 , H01L21/20 , H01L21/36
CPC分类号： H01L29/0665 , B01J23/50 , B01J23/52 , B01J23/72 , B01J35/0013 , B01J37/349 , B81C1/0019 , B81C1/00206 , B82Y10/00 , B82Y15/00 , B82Y30/00 , B82Y40/00 , C30B11/00 , C30B25/005 , C30B29/605 , G01N27/4146 , G01N33/54373 , G11C13/0014 , G11C13/0019 , G11C13/025 , G11C13/04 , G11C2213/77 , G11C2213/81 , H01L21/02521 , H01L21/02532 , H01L21/0254 , H01L21/02543 , H01L21/02557 , H01L21/0256 , H01L21/02573 , H01L21/02581 , H01L21/02603 , H01L21/02606 , H01L21/0262 , H01L21/02628 , H01L21/02631 , H01L21/02636 , H01L21/02639 , H01L21/02645 , H01L21/02653 , H01L23/53276 , H01L29/045 , H01L29/0673 , H01L29/068 , H01L29/16 , H01L29/1602 , H01L29/18 , H01L29/20 , H01L29/207 , H01L29/22 , H01L29/24 , H01L29/26 , H01L29/267 , H01L33/06 , H01L33/18 , H01L33/20 , H01L51/002 , H01L51/0048 , H01L2924/0002 , Y02E10/549 , Y02P70/521 , Y10S438/962 , Y10S977/762 , Y10S977/847 , Y10S977/858 , Y10S977/882 , Y10S977/883 , Y10S977/892 , Y10S977/936 , Y10T428/24 , H01L2924/00
摘要： A bulk-doped semiconductor that is at least one of the following: a single crystal, an elongated and bulk-doped semiconductor that, at any point along its longitudinal axis, has a largest cross-sectional dimension less than 500 nanometers, and a free-standing and bulk-doped semiconductor with at least one portion having a smallest width of less than 500 nanometers. At least one portion of such a semiconductor may a smallest width of less than 200 nanometers, or less than 150 nanometers, or less than 100 nanometers, or less than 80 nanometers, or less than 70 nanometers, or less than 60 nanometers, or less than 40 nanometers, or less than 20 nanometers, or less than 10 nanometers, or even less than 5 nanometers. Such a semiconductor may be doped during growth. Such a semiconductor may be part of a device, which may include any of a variety of devices and combinations thereof, and a variety of assembling techniques may be used to fabricate devices from such a semiconductor.
摘要翻译：体积掺杂半导体，其为以下至少一个：单晶，细长体积掺杂半导体，其沿着其纵向轴线的任何点具有小于500纳米的最大横截面尺寸，具有至少一部分具有小于500纳米的最小宽度的单体和体掺杂半导体。这种半导体的至少一部分可以具有小于200纳米，或小于150纳米，或小于100纳米，或小于80纳米，或小于70纳米，或小于60纳米或更小的最小宽度小于20纳米，或小于10纳米，甚至小于5纳米。这样的半导体可以在生长期间被掺杂。这样的半导体可以是设备的一部分，其可以包括各种设备及其组合中的任何一种，并且可以使用各种组装技术来从这种半导体制造设备。

12. 发明申请

US20110026607A1 SYSTEM AND METHOD FOR ENHANCING THE VISIBILITY OF AN OBJECT IN A DIGITAL PICTURE 审中-公开
标题翻译：用于增强数字图像中对象可见性的系统和方法
公开(公告)号：US20110026607A1
公开(公告)日：2011-02-03
申请号：US12736496
申请日：2009-04-07
申请人： Sitaram Bhagavathy , Joan Llach , Yu Huang
发明人： Sitaram Bhagavathy , Joan Llach , Yu Huang
IPC分类号： H04N7/26 , G06K9/40 , H04N5/21
CPC分类号： G06T5/002 , G06T5/003 , G06T5/20 , G06T2207/10016 , H04N19/119 , H04N19/124 , H04N19/162 , H04N19/167 , H04N19/17 , H04N19/20 , H04N19/46 , H04N19/80 , H04N19/85
摘要： The visibility of an object in a digital picture is enhanced by comparing an input video of the digital picture with stored information representative of the nature and characteristics of the object to develop object localization information that identifies and locates the object. The input video and the object localization information are encoded and transmitted to a receiver where the input video and the object localization information are decoded and the decoded input video is enhanced by the decoded object localization information
摘要翻译：通过将数字图像的输入视频与表示对象的性质和特征的存储信息进行比较，以开发识别和定位对象的对象定位信息来增强数字图像中对象的可视性。输入视频和对象定位信息被编码并发送到接收机，其中输入视频和对象定位信息被解码，并且解码的输入视频被解码的对象定位信息增强

13. 发明申请

US20100177969A1 Method and System for Image Processing to Classify an Object in an Image 有权
标题翻译：图像处理方法和系统对图像中的对象进行分类
公开(公告)号：US20100177969A1
公开(公告)日：2010-07-15
申请号：US12686902
申请日：2010-01-13
申请人： Yu Huang , Hongbing Li , Jun Tian , Hong Heather Yu
发明人： Yu Huang , Hongbing Li , Jun Tian , Hong Heather Yu
IPC分类号： G06K9/62
CPC分类号： G06T7/0081 , G06K9/3241 , G06K9/4642 , G06K9/4652 , G06K9/6267 , G06T7/11 , G06T7/194 , G06T2207/10024 , G06T2207/30221 , H04N21/23418 , H04N21/23614 , H04N21/4725 , H04N21/64322 , H04N21/8545
摘要： In an image processing method, an object is located within an image. An area around the object is determined and divided into at least first and second portions based upon image information within the area. The object can then be classified based upon both image information in the first portion of the area and image information in the second portion of the area.
摘要翻译：在图像处理方法中，对象位于图像内。基于该区域内的图像信息确定对象周围的区域，并将其划分为至少第一和第二部分。然后可以基于区域的第一部分中的图像信息和区域的第二部分中的图像信息来对对象进行分类。

14. 发明申请

US20100155698A1 Nanoscale wires and related devices 审中-公开
标题翻译：纳米线及相关设备
公开(公告)号：US20100155698A1
公开(公告)日：2010-06-24
申请号：US12459177
申请日：2009-06-26
申请人： Charles M. Lieber , Xiangfeng Duan , Yi Cui , Yu Huang , Mark Gudiksen , Lincoln J. Lauhon , Jianfang Wang , Hongkun Park , Qingqiao Wei , Wenjie Liang , David C. Smith , Deli Wang , Zhaohui Zhong
发明人： Charles M. Lieber , Xiangfeng Duan , Yi Cui , Yu Huang , Mark Gudiksen , Lincoln J. Lauhon , Jianfang Wang , Hongkun Park , Qingqiao Wei , Wenjie Liang , David C. Smith , Deli Wang , Zhaohui Zhong
IPC分类号： H01L29/12 , H01L21/20
CPC分类号： C30B29/60 , B82Y10/00 , B82Y15/00 , B82Y30/00 , G01N27/4146 , H01L29/0665 , H01L29/0673 , H01L29/068 , H01L29/1606 , H01L29/2003 , H01L29/267 , H01L29/73 , H01L31/0352 , H01L31/08 , H01L33/18 , H01L33/20 , H01L51/0048
摘要： The present invention relates generally to sub-microelectronic circuitry, and more particularly to nanometer-scale articles, including nanoscale wires which can be selectively doped at various locations and at various levels. In some cases, the articles may be single crystals. The nanoscale wires can be doped, for example, differentially along their length, or radially, and either in terms of identity of dopant, concentration of dopant, or both. This may be used to provide both n-type and p-type conductivity in a single item, or in different items in close proximity to each other, such as in a crossbar array. The fabrication and growth of such articles is described, and the arrangement of such articles to fabricate electronic, optoelectronic, or spintronic devices and components. For example, semiconductor materials can be doped to form n-type and p-type semiconductor regions for making a variety of devices such as field effect transistors, bipolar transistors, complementary inverters, tunnel diodes, light emitting diodes, sensors, and the like.
摘要翻译：本发明一般涉及亚微电子电路，更具体地涉及纳米尺度制品，包括可以在各种位置和各种级别选择性地掺杂的纳米线。在一些情况下，制品可以是单晶。纳米尺寸线可以例如沿其长度或径向掺杂，或者根据掺杂剂的掺杂剂浓度，掺杂剂的浓度或两者掺杂。这可以用于在单个项目中提供n型和p型导电性，或者在彼此非常接近的不同项目中提供，例如在横杆阵列中。描述了这种制品的制造和生长，以及这些制品的布置以制造电子，光电子或自旋电子器件和部件。例如，可以掺杂半导体材料以形成n型和p型半导体区域，用于制造诸如场效应晶体管，双极晶体管，互补反相器，隧道二极管，发光二极管，传感器等的各种器件。

15. 发明申请

US20100098307A1 METHOD AND APPARATUS FOR DETECTING OBJECTS OF INTEREST IN SOCCER VIDEO BY COLOR 有权
标题翻译：用于通过颜色检测摄像机视频中的兴趣对象的方法和装置
公开(公告)号：US20100098307A1
公开(公告)日：2010-04-22
申请号：US12450410
申请日：2007-11-06
申请人： Yu Huang , Joan Llach , Sitaram Bhagavathy
发明人： Yu Huang , Joan Llach , Sitaram Bhagavathy
IPC分类号： G06K9/62
CPC分类号： G06K9/00711 , G06K9/44 , G06K9/4652
摘要： A method is disclosed for detecting and locating players in soccer video frames without errors caused by artifacts by a shape analysis-based approach to identify the players and the ball from roughly extracted foregrounds obtained by color segmentation and connected component analysis, by performing a Euclidean distance transform to extract skeletons for every foreground blob, by performing a shape analysis to remove false alarms (non-players and non-ball), and then by performing skeleton pruning and a reverse Euclidean distance transform to cut-off the artifacts primarily caused by playing field lines.
摘要翻译：公开了一种用于通过基于形状分析的方法来检测和定位足球视频帧中的玩家而产生错误的方法，以通过执行欧几里德距离从颜色分割和连接分量分析获得的大致提取的前景识别玩家和球，通过执行形状分析来消除假警报（非玩家和非球），然后通过执行骨架修剪和反向欧几里得距离变换来截取主要由玩耍造成的伪影，从而转换为每个前景斑点提取骨架现场线。

16. 发明申请

US20100067802A1 ESTIMATING A LOCATION OF AN OBJECT IN AN IMAGE 审中-公开
标题翻译：估计图像中的对象的位置
公开(公告)号：US20100067802A1
公开(公告)日：2010-03-18
申请号：US12312743
申请日：2007-11-30
申请人： Yu Huang , Joan Llach
发明人： Yu Huang , Joan Llach
IPC分类号： G06K9/46
CPC分类号： G06K9/32 , G06K2009/3291 , G06T7/277 , G06T2207/10016 , G06T2207/30224 , G06T2207/30241
摘要： An implementation provides a method for estimating a location for an object in a particular image of a sequence of images. The location is estimated using a particle-based framework, such as a particle filter. It is determined that the estimated location for the object in the particular image is occluded. A trajectory is estimated for the object based on one or more previous locations of the object in one or more previous images in the sequence of images. The estimated location of the object is changed based on the estimated trajectory.
摘要翻译：实现提供了一种用于估计图像序列的特定图像中的对象的位置的方法。使用基于粒子的框架（如粒子滤波器）来估计位置。确定特定图像中对象的估计位置被遮挡。基于图像序列中的一个或多个先前图像中的物体的一个或多个先前位置来估计对象的轨迹。基于估计的轨迹改变对象的估计位置。

17. 发明授权

US07666708B2 Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors, and fabricating such devices 有权
标题翻译：掺杂的细长半导体，生长这样的半导体，包括这种半导体的器件，以及制造这样的器件
公开(公告)号：US07666708B2
公开(公告)日：2010-02-23
申请号：US11543352
申请日：2006-10-04
申请人： Charles M. Lieber , Yi Cui , Xiangfeng Duan , Yu Huang
发明人： Charles M. Lieber , Yi Cui , Xiangfeng Duan , Yu Huang
IPC分类号： H01L51/40 , D01C5/00 , D01F9/12
CPC分类号： H01L29/0665 , B01J23/50 , B01J23/52 , B01J23/72 , B01J35/0013 , B01J37/349 , B81C1/0019 , B81C1/00206 , B82Y10/00 , B82Y15/00 , B82Y30/00 , B82Y40/00 , C30B11/00 , C30B25/005 , C30B29/605 , G01N27/4146 , G01N33/54373 , G11C13/0014 , G11C13/0019 , G11C13/025 , G11C13/04 , G11C2213/77 , G11C2213/81 , H01L21/02521 , H01L21/02532 , H01L21/0254 , H01L21/02543 , H01L21/02557 , H01L21/0256 , H01L21/02573 , H01L21/02581 , H01L21/02603 , H01L21/02606 , H01L21/0262 , H01L21/02628 , H01L21/02631 , H01L21/02636 , H01L21/02639 , H01L21/02645 , H01L21/02653 , H01L23/53276 , H01L29/045 , H01L29/0673 , H01L29/068 , H01L29/16 , H01L29/1602 , H01L29/18 , H01L29/20 , H01L29/207 , H01L29/22 , H01L29/24 , H01L29/26 , H01L29/267 , H01L33/06 , H01L33/18 , H01L33/20 , H01L51/002 , H01L51/0048 , H01L2924/0002 , Y02E10/549 , Y02P70/521 , Y10S438/962 , Y10S977/762 , Y10S977/847 , Y10S977/858 , Y10S977/882 , Y10S977/883 , Y10S977/892 , Y10S977/936 , Y10T428/24 , H01L2924/00
摘要： A bulk-doped semiconductor that is at least one of the following: a single crystal, an elongated and bulk-doped semiconductor that, at any point along its longitudinal is, axis, has a largest cross-sectional dimension less than 500 nanometers, and a free-standing and bulk-doped semiconductor with at least one portion having a smallest width of less than 500 nanometers. At least one portion of such a semiconductor may a smallest width of less than 200 nanometers, or less than 150 nanometers, or less than 100 nanometers, or less than 80 nanometers, or less than 70 nanometers, or less than 60 nanometers, or less than 40 nanometers, or less than 20 nanometers, or less than 10 nanometers, or even less an 5 nanometers. Such a semiconductor may be doped during growth. Such a semiconductor may be part of a device, which may include any of a variety of devices and combinations thereof, and a variety assembling techniques may be used to fabricate devices from such a semiconductor.
摘要翻译：一种体积掺杂半导体，其为以下至少一种：单晶，细长体和体掺杂半导体，其沿着其纵向的任何点为轴线，具有小于500纳米的最大横截面尺寸，以及具有至少一个具有小于500纳米的最小宽度的部分的独立且体积掺杂的半导体。这种半导体的至少一部分可以具有小于200纳米，或小于150纳米，或小于100纳米，或小于80纳米，或小于70纳米，或小于60纳米或更小的最小宽度小于20纳米，或小于10纳米，或甚至更小的5纳米。这样的半导体可以在生长期间被掺杂。这样的半导体可以是设备的一部分，其可以包括各种设备及其组合中的任何一种，并且可以使用各种组合技术来从这样的半导体制造设备。

18. 发明授权

US07554365B2 Glitch-free clock switching circuit 有权
标题翻译：无毛刺时钟切换电路
公开(公告)号：US07554365B2
公开(公告)日：2009-06-30
申请号：US12045725
申请日：2008-03-11
申请人： Peng Gao , Dejian Li , Yu Huang
发明人： Peng Gao , Dejian Li , Yu Huang
IPC分类号： H03K17/00
CPC分类号： G06F1/04
摘要： A glitch-free clock switching circuit receives a first clock signal and a second clock signal and outputs a third clock signal corresponding to the first clock signal or a fourth clock signal corresponding to the second clock signal according to a clock switching signal. The glitch-free clock switching circuit switches to output clock signals by stopping output of a clock signal, and then waiting for a predetermined period of time before outputting another clock signal.
摘要翻译：无毛刺时钟切换电路接收第一时钟信号和第二时钟信号，并根据时钟切换信号输出与第一时钟信号对应的第三时钟信号或对应于第二时钟信号的第四时钟信号。无毛刺时钟切换电路通过停止时钟信号的输出而切换为输出时钟信号，然后在输出另一个时钟信号之前等待预定的时间段。

19. 发明申请

US20090067157A1 OPTICAL DISPLAY DEVICE WITH ASYMMETRIC VIEWING AREA 失效
标题翻译：光学显示装置与不对称观察区域
公开(公告)号：US20090067157A1
公开(公告)日：2009-03-12
申请号：US11658522
申请日：2005-07-22
申请人： Terence Alfred Cooper , Adnan Malik , Yu Huang
发明人： Terence Alfred Cooper , Adnan Malik , Yu Huang
IPC分类号： G02F1/13357 , G02B1/00 , G02B5/02
CPC分类号： G02F1/133504
摘要： The present disclosure provides optical devices having an asymmetric viewing area imparting improved optical properties to the device.
摘要翻译：本公开提供具有赋予设备改进的光学性质的不对称观看区域的光学装置。

20. 发明申请

US20070297051A1 Total internal reflection fresnel lens systems, assemblies, and methods 失效
标题翻译：全内反射菲涅尔透镜系统，组件和方法
公开(公告)号：US20070297051A1
公开(公告)日：2007-12-27
申请号：US11810489
申请日：2007-06-06
申请人： Yu Huang , Adnan Malik
发明人： Yu Huang , Adnan Malik
IPC分类号： G03B21/60 , G02B3/08
CPC分类号： G03B21/10 , G03B21/625
摘要： Off-axis total internal reflection Fresnel lenses and projection screens are disclosed that, when combined, enable construction of projection assemblies for rear-projection-type screen devices (e.g., projection television systems) that are thinner, provide easier handling and maintenance, and have improved contrast, focusing, and resolution when compared with conventional projection screen devices. The off-axis Fresnel lens comprises a plurality of concentric, outwardly-extending, total internal reflection-type prism facets, the top side of which may be aspherical. Embodiments of the invention also include projection screens having at least one diffuser and one lenticular lens. In addition, one or more opaque layers may be used to improve contrast. The various components, e.g., the fresnel lens, the diffuser, the lenticular lens(es), the opaque layer(s), etc. are all combined, or connected, in such a way as to eliminate substantially all air gaps within the connections.
摘要翻译：离轴全内反射菲涅尔透镜和投影屏幕被公开，当组合时，能够构造更薄的后投影式屏幕装置（例如，投影电视系统）的投影组件，从而提供更容易的处理和维护，并具有与传统的投影屏幕设备相比，改善了对比度，对焦和分辨率。离轴菲涅尔透镜包括多个同心的，向外延伸的全内反射型棱镜面，其顶侧可以是非球面。本发明的实施例还包括具有至少一个漫射器和一个双凸透镜的投影屏幕。此外，可以使用一个或多个不透明层来改善对比度。各种组件，例如菲涅尔透镜，漫射器，双凸透镜，不透明层等都被组合或连接，以便基本上消除连接内的所有空气间隙。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式