专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明申请

US20080087914A1 Extreme Ultraviolet (EUV) Detectors Based Upon Aluminum Nitride (ALN) Wide Bandgap Semiconductors 有权
标题翻译：基于氮化铝（ALN）宽带隙半导体的极紫外（EUV）探测器
公开(公告)号：US20080087914A1
公开(公告)日：2008-04-17
申请号：US11867463
申请日：2007-10-04
申请人： Jing Li , Zhaoyang Fan , Jingyu Lin , Hongxing Jiang
发明人： Jing Li , Zhaoyang Fan , Jingyu Lin , Hongxing Jiang
IPC分类号： H01L31/00 , H01L21/00
CPC分类号： H01L31/184 , H01L31/0304 , H01L31/03046 , H01L31/105 , H01L31/108 , H01L31/1844 , H01L31/1852 , Y02E10/544 , Y02P70/521
摘要： Disclosed are detector devices and related methods. In an Al EUV detector a low temperature AlN layer is deposed above an AlN buffer layer. In one embodiment, the low temperature AlN layer is deposed at about 800° C. Pulsed NH3 is used when growing an AlN epilayer above the low temperature layer. Numerous embodiments are disclosed.
摘要翻译：公开了检测器装置及相关方法。在Al EUV检测器中，低温AlN层被放置在AlN缓冲层上方。在一个实施方案中，低温AlN层在约800℃下放电。当在低温层上生长AlN外延层时，使用脉冲NH 3。公开了许多实施例。

12. 发明申请

US20080083929A1 AC/DC LIGHT EMITTING DIODES WITH INTEGRATED PROTECTION MECHANISM 有权
标题翻译：具有集成保护机制的AC / DC发光二极管
公开(公告)号：US20080083929A1
公开(公告)日：2008-04-10
申请号：US11683293
申请日：2007-03-07
申请人： Zhaoyang Fan , Jing Li , Jingyu Lin , Hongxing Jiang
发明人： Zhaoyang Fan , Jing Li , Jingyu Lin , Hongxing Jiang
IPC分类号： H01L33/00
CPC分类号： H01L27/15 , H01L27/156 , H01L33/62 , H01L2224/48247 , H01L2224/48257 , H05B33/0803 , H05B33/0821 , Y02B20/341 , H01L2224/48091 , H01L2924/00014
摘要： A highly reliable, high voltage AC/DC LED device with integrated protection mechanism is disclosed. The protection element can be a current-limiting resistor, monolithically integrated on LED chip, or a discrete resistor assembled in the lamp package or submount. The protection elements may also include other parts integrated on a submount.
摘要翻译：公开了一种具有集成保护机构的高可靠性高压AC / DC LED器件。保护元件可以是单片集成在LED芯片上的限流电阻器，或组装在灯组件或底座中的分立电阻器。保护元件还可以包括集成在基座上的其它部件。

13. 发明申请

US20100320443A1 ER Doped III-Nitride Materials And Devices Synthesized by MOCVD 有权
标题翻译： ER掺杂的III族氮化物材料和MOCVD合成的器件
公开(公告)号：US20100320443A1
公开(公告)日：2010-12-23
申请号：US12375187
申请日：2007-08-24
申请人： Hongxing Jiang , Jingyu Lin , Cris Ugolini , John Zavada
发明人： Hongxing Jiang , Jingyu Lin , Cris Ugolini , John Zavada
IPC分类号： H01L33/00 , H01L21/443
CPC分类号： H01L29/207 , B82Y20/00 , G02B6/1225 , H01L21/0237 , H01L21/02458 , H01L21/0254 , H01L21/02581 , H01L27/15 , H01L29/2003 , H01L33/305 , H01S3/0632 , H01S3/0637 , H01S3/0933 , H01S3/0941 , H01S3/09415 , H01S3/1608 , H01S3/1628 , H01S3/2383 , H01S5/026 , H01S5/183 , H01S5/32341
摘要： This disclosure relates to the synthesis of Er doped GaN epilayers by in-situ doping by metal-organic chemical vapor deposition (MOCVD). In an embodiment, both above and below bandgap excitation results in a sharp PL emission peak at 1.54 μm. Contrary with other growth methods, MOCVD grown Er-doped GaN epilayers exhibit virtually no visible emission lines, an present a small thermal quenching effect. The Er incorporation has very little effect on the electrical conductivity of the GaN epilayers and Er doped layers retain similar electrical properties as those of undoped GaN.
摘要翻译：本公开涉及通过金属有机化学气相沉积（MOCVD）的原位掺杂来合成Er掺杂的GaN外延层。在一个实施方案中，上面和下面的带隙激发导致在1.54μm处的尖锐的PL发射峰。与其他生长方法相反，MOCVD生长的Er掺杂GaN外延层实际上没有显示出可见的发射线，具有小的热淬火效应。 Er掺入对GaN外延层的导电性几乎没有影响，并且Er掺杂层保持与未掺杂的GaN类似的电性能。

14. 发明授权

US07213942B2 Light emitting diodes for high AC voltage operation and general lighting 有权
标题翻译：用于高交流电压操作和一般照明的发光二极管
公开(公告)号：US07213942B2
公开(公告)日：2007-05-08
申请号：US11120832
申请日：2005-05-03
申请人： Hongxing Jiang , Jingyu Lin
发明人： Hongxing Jiang , Jingyu Lin
IPC分类号： F21S13/14
CPC分类号： H01L27/156 , H01L24/24 , H01L24/82 , H01L2224/24051 , H01L2924/01015 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/01077 , H01L2924/01079 , H01L2924/014 , H01L2924/12041 , H01L2924/14 , H05B33/0809 , H05B33/0821 , Y10S362/80
摘要： A single-chip integrated LED particularly adapted for direct use with a high voltage AC power comprises a plurality of series-connected LEDs arranged in two arrays and flip chip bonded to a transparent substrate. The opposite polarities of the arrays are connected together and then connected to the AC power source. During the positive half of the AC cycle, one array of LEDs is forward biased and energized, while the other array is reverse biased. During the negative half of the AC cycle, the other array of LEDs is forward biased and thus energized, while the first array is reverse biased and thus not energized. The arrays are alternately energized and de-energized at the frequency of the AC power source, and thus the single-chip integrated LED always appears to be energized.
摘要翻译：特别适用于直接使用高压AC电力的单芯片集成LED包括以两个阵列布置的多个串联连接的LED和与芯片结合的透明基板的倒装芯片。阵列的相反极性连接在一起，然后连接到AC电源。在AC周期的正半周期，一组LED正向偏置并通电，而另一个阵列则被反向偏置。在AC周期的负半部分期间，另一组LED阵列被正向偏置并因此被激励，而第一阵列被反向偏置，因此未通电。在交流电源的频率下，阵列交替地通电并断电，因此单芯片集成LED总是看起来通电。

15. 发明授权

US07535028B2 Micro-LED based high voltage AC/DC indicator lamp 有权
标题翻译：基于微型LED的高压AC / DC指示灯
公开(公告)号：US07535028B2
公开(公告)日：2009-05-19
申请号：US11102273
申请日：2005-04-08
申请人： Zhaoyang Fan , Hongxing Jiang , Jingyu Lin
发明人： Zhaoyang Fan , Hongxing Jiang , Jingyu Lin
IPC分类号： H01L33/00
CPC分类号： H01L27/153 , F21K9/00 , H01L33/62 , H01L2224/48091 , H01L2224/48247 , H01L2924/181 , H01L2924/00014 , H01L2924/00012
摘要： An AC/DC indicator lamp based on an array of micro-LEDs may be powered by a standard high voltage AC or DC power source. The indicator lamp has a low power consumption. The micro-LEDs are serially connected on a substrate with the total device area and power consumption compatible with a standard DC low voltage LED. A plurality of indicator lamps may be connected together in parallel to present a string of indicator lamps.
摘要翻译：基于微型LED阵列的AC / DC指示灯可以由标准高压AC或DC电源供电。指示灯功耗低。微型LED串联连接在基板上，其总的器件面积和功耗与标准的直流低压LED兼容。多个指示灯可以并联连接在一起，以呈现一串指示灯。

16. 发明申请

US20060163589A1 Heterogeneous integrated high voltage DC/AC light emitter 有权
标题翻译：异质集成高压直流/交流发光二极管
公开(公告)号：US20060163589A1
公开(公告)日：2006-07-27
申请号：US11040445
申请日：2005-01-21
申请人： Zhaoyang Fan , Hongxing Jiang , Jingyu Lin
发明人： Zhaoyang Fan , Hongxing Jiang , Jingyu Lin
IPC分类号： H01L33/00
CPC分类号： H01L27/153 , F21K9/00 , H01L27/156 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/11 , H01L2924/00014 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： A single-chip integrated LED particularly adapted for direct use with a high voltage DC or AC power sources comprises a plurality of electrically isolated LEDs on a generally transparent substrate and bonded to electrically conductive elements on a thermally conductive mount. A reflective coating may be applied to the area between LEDs.
摘要翻译：特别适用于高压直流或交流电源直接使用的单芯片集成LED包括多个电绝缘的LED，其通常在透明基板上并与导热支架上的导电元件结合。可以将反射涂层施加到LED之间的区域。

17. 发明授权

US06957899B2 Light emitting diodes for high AC voltage operation and general lighting 有权
标题翻译：用于高交流电压操作和一般照明的发光二极管
公开(公告)号：US06957899B2
公开(公告)日：2005-10-25
申请号：US10279296
申请日：2002-10-24
申请人： Hongxing Jiang , Jingyu Lin , Sixuan Jin
发明人： Hongxing Jiang , Jingyu Lin , Sixuan Jin
IPC分类号： H01L27/15 , H05B33/08 , F21S13/14
CPC分类号： H05B33/0821 , H01L24/24 , H01L24/82 , H01L27/156 , H01L2224/24137 , H01L2224/73267 , H01L2924/01015 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01049 , H01L2924/01077 , H01L2924/01079 , H01L2924/12041 , H01L2924/14 , H05B33/0809 , Y10S362/80
摘要： A single-chip integrated LED particularly adapted for direct use with a high voltage AC power comprises a plurality of series-connected LEDs arranged in two arrays. The opposite polarities of the arrays are connected together and then connected to the AC power source. During the positive half of the AC cycle, one array of LEDs is forward biased and energized, while the other array is reverse biased. During the negative half of the AC cycle, the other array of LEDs is forward biased and thus energized, while the first array is reverse biased and thus not energized. The arrays are alternately energized and de-energized at the frequency of the AC power source, and thus the single-chip integrated LED always appears to be energized.
摘要翻译：特别适用于高压交流电源直接使用的单芯片集成LED包括以两个阵列布置的多个串联连接的LED。阵列的相反极性连接在一起，然后连接到AC电源。在AC周期的正半周期，一组LED正向偏置并通电，而另一个阵列则被反向偏置。在AC周期的负半部分期间，另一组LED阵列被正向偏置并因此被激励，而第一阵列被反向偏置，因此未通电。在交流电源的频率下，阵列交替地通电并断电，因此单芯片集成LED总是看起来通电。

18. 发明授权

US5101109A Persistent photoconductivity quenching effect crystals and electrical apparatus using same 失效
标题翻译：持续的光电导淬火效应晶体和电器使用相同
公开(公告)号：US5101109A
公开(公告)日：1992-03-31
申请号：US597021
申请日：1990-10-15
申请人： Hongxing Jiang , Jingyu Lin
发明人： Hongxing Jiang , Jingyu Lin
IPC分类号： H01L31/0296 , H01L31/09
CPC分类号： H01L31/09 , H01L31/0296
摘要： Mixed II-VI crystal semiconductors (10) having the general formula Zn.sub.x Cd.sub.1-x Se, where x is up to about 0.4, are provided which exhibit persistent photoconductivity (PPC) above 70.degree. K. which is quencable by infrared radiation. An electrical apparatus (12) utilizing the crystal (10) of the invention is further provided. The apparatus (12) preferably includes a pair of electrical terminals (14, 16) coupled to the crystal (10), circuit-defining structure (18) connecting the terminal (14, 16) coupled with a power source (19) and a current responsive device (20) being in series with the crystal (10). Action of visible light on the crystal (10) induces PPC, completing an electrical circuit and initiating current flow. Incident infrared light on the crystal (10) quenches PPC and decreases current flow.
摘要翻译：提供具有通式ZnxCd1-xSe的混合II-VI晶体半导体（10），其中x高达约0.4，其表现出高于70℃的持续光电导率（PPC），其可通过红外辐射淬灭。还提供了利用本发明的晶体（10）的电气设备（12）。设备（12）优选地包括耦合到晶体（10）的一对电端子（14,16），连接与电源（19）耦合的端子（14,16）的电路限定结构（18）电流响应装置（20）与晶体（10）串联。晶体（10）上的可见光的作用引起PPC，完成电路并启动电流。晶体上的入射红外光（10）淬灭PPC并降低电流。

19. 发明申请

US20060138443A1 Encapsulation and packaging of ultraviolet and deep-ultraviolet light emitting diodes 审中-公开
标题翻译：紫外线和深紫外线发光二极管的封装和封装
公开(公告)号：US20060138443A1
公开(公告)日：2006-06-29
申请号：US11020762
申请日：2004-12-23
申请人： Zhaoyang Fan , Hongxing Jiang , Jingyu Lin
发明人： Zhaoyang Fan , Hongxing Jiang , Jingyu Lin
IPC分类号： H01L33/00 , H01L29/24
CPC分类号： H01L33/56 , H01L33/58 , H01L2224/48091 , H01L2224/48247 , H01L2924/01322 , H01L2924/181 , H01L2924/00 , H01L2924/00012 , H01L2924/00014
摘要： Disclosed are the materials and methods used to package and encapsulate UV and DUV LEDs. These LEDs have emission wavelengths in the range from around 360 nm to around 200 nm. The UV/DUV LED die or its flip-chip bonded subassembly are disposed in a low thermal resistance packaging house. Either the whole package or just the UV/DUV LED is globed with a UV/DUV transparent dome-shape encapsulation. This protects the device, enhances light extraction, and focuses the light emitted. The dome-shape encapsulation may be comprised of optically transparent PMMA, fluorinated polymers or other organic materials. Alternatively it might be configured having a lens made from sapphire, fused silica or other transparent materials. The lens material is cemented on the UV/DUV LED with UV/DUV transparent polymers.
摘要翻译：披露的是用于封装和封装UV和DUV LED的材料和方法。这些LED具有在约360nm至约200nm范围内的发射波长。 UV / DUV LED芯片或其倒装芯片接合子组件设置在低热阻包装室内。整个封装或只是UV / DUV LED都采用UV / DUV透明的圆顶形封装。这样可以保护设备，增强光线提取，并对发出的光线进行聚焦。圆顶形包封可以由光学透明的PMMA，氟化聚合物或其它有机材料组成。或者，其可以被配置为具有由蓝宝石，熔融石英或其它透明材料制成的透镜。透镜材料用UV / DUV透明聚合物胶合在UV / DUV LED上。

20. 发明授权

US08227328B2 Er doped III-nitride materials and devices synthesized by MOCVD 有权
标题翻译：铒掺杂III族氮化物材料和通过MOCVD合成的器件
公开(公告)号：US08227328B2
公开(公告)日：2012-07-24
申请号：US12375187
申请日：2007-08-24
申请人： Hongxing Jiang , Jingyu Lin , Cris Ugolini , John Zavada
发明人： Hongxing Jiang , Jingyu Lin , Cris Ugolini , John Zavada
IPC分类号： H01L21/20
CPC分类号： H01L29/207 , B82Y20/00 , G02B6/1225 , H01L21/0237 , H01L21/02458 , H01L21/0254 , H01L21/02581 , H01L27/15 , H01L29/2003 , H01L33/305 , H01S3/0632 , H01S3/0637 , H01S3/0933 , H01S3/0941 , H01S3/09415 , H01S3/1608 , H01S3/1628 , H01S3/2383 , H01S5/026 , H01S5/183 , H01S5/32341
摘要： This disclosure relates to the synthesis of Er doped GaN epilayers by in-situ doping by metal-organic chemical vapor deposition (MOCVD). In an embodiment, both above and below bandgap excitation results in a sharp PL emission peak at 1.54 μm. Contrary with other growth methods, MOCVD grown Er-doped GaN epilayers exhibit virtually no visible emission lines, an present a small thermal quenching effect. The Er incorporation has very little effect on the electrical conductivity of the GaN epilayers and Er doped layers retain similar electrical properties as those of undoped GaN.
摘要翻译：本公开涉及通过金属有机化学气相沉积（MOCVD）的原位掺杂来合成Er掺杂的GaN外延层。在一个实施方案中，上面和下面的带隙激发导致在1.54μm处的尖锐的PL发射峰。与其他生长方法相反，MOCVD生长的Er掺杂GaN外延层实际上没有显示出可见的发射线，具有小的热淬火效应。 Er掺入对GaN外延层的导电性几乎没有影响，并且Er掺杂层保持与未掺杂的GaN类似的电性能。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式