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11. 发明专利

JPS63164195A MANUFACTURE OF ELECTROLUMINESCENCE DEVICE 失效
公开(公告)号：JPS63164195A
公开(公告)日：1988-07-07
申请号：JP30851086
申请日：1986-12-26
申请人： HITACHI LTD , HITACHI MAXELL
发明人： UENAE KEIICHIRO , KANEHISA OSAMU , SUZUKI TERUKI
IPC分类号： H05B33/10

12. 发明专利

JPS6244984A THIN FILM ELECTROLUMINESCENCE ELEMENT AND MANUFACTURE THEREOF 失效
公开(公告)号：JPS6244984A
公开(公告)日：1987-02-26
申请号：JP18180685
申请日：1985-08-21
申请人： HITACHI LTD , HITACHI MAXELL
发明人： KANEHISA OSAMU , UENAE KEIICHIRO , UDA MASAHITO , YAMAMOTO AKIRA
IPC分类号： H05B33/10 , H05B33/12 , H05B33/14

13. 发明专利

JPS60194065A Heaping method of molecular ray 失效
标题翻译：分子辐射的复合方法
公开(公告)号：JPS60194065A
公开(公告)日：1985-10-02
申请号：JP23491584
申请日：1984-11-09
申请人： Hitachi Ltd
发明人： SHIMADA JIYUICHI , KATAYAMA YOSHIFUMI , KANEHISA OSAMU , MANABE TOSHIKATSU
IPC分类号： C23C14/24 , C23C16/513
CPC分类号： C23C16/513
摘要： PURPOSE:To enable free selection of heaping conditions by separating a ray source part and a heaping part to independent atmospheres, feeding the molecular rays of the activated gaseous raw materials to a substrate and heaping the molecular rays on the substrate. CONSTITUTION:A gas such as Si-H4, Si-F4 or the like is introduced into an activating chamber 3 for a main raw material, by which the gas is activated or converted to plasma. A gas such as H2, F2 or the like is introduced into an activating chamber 4 for an auxiliary raw material, by which said gas is activated or converted to plasma. An impurity gas such as B2H5, PH3 or the like is introduced into an activating chamber 5 for an impurity, by which the gas is activated or converted to plasma. The inside of the chambers 3, 4, 5 is evacuated to a vacuum by evacuating parts 7, 7', 7''. Electric fields are impressed to the chambers 3, 4, 5 by electrodes 8, 9, 10. The respective activated raw materials are fed to a material heaping part 2 to heap the molecular rays of the gaseous raw materials on a substrate 6, thereby yielding a material such as amorphous silicon. The part 2 is maintained in a high vacuum by the differential evacuation with respect to the chambers 3, 4, 5 and the substrate temp. therein is independently set. The conditions for forming the thin film are thus changed over a wide range.
摘要翻译：目的：为了通过将射线源部分和堆叠部分分离成独立的气氛来实现堆叠条件的自由选择，将激活的气态原料的分子射线输送到基底上并且堆叠在基底上的分子射线。构成：将诸如Si-H4，Si-F4等的气体引入用于主要原料的活化室3中，由此气体被激活或转化为等离子体。将诸如H 2，F 2等的气体引入用于辅助原料的活化室4中，所述气体被激活或转化为等离子体。将诸如B2H5，PH3等的杂质气体引入用于杂质的活化室5中，由此气体被激活或转化成等离子体。通过抽空部件7,7'，7“将腔室3,4,5的内部抽真空。电场通过电极8,9,10向腔室3,4,5施加电压。各自的活化原料被输送到材料堆叠部分2以将气态原料的分子射线堆积在基底6上，由此产生诸如非晶硅的材料。通过相对于腔室3,4,5的不同抽气和衬底温度将部件2保持在高真空中。其中独立设置。因此，形成薄膜的条件因此在宽范围内变化。

14. 发明专利

JPH02818A SEMICONDUCTOR OPTICAL DEVICE 失效
公开(公告)号：JPH02818A
公开(公告)日：1990-01-05
申请号：JP28767588
申请日：1988-11-16
申请人： HITACHI LTD
发明人： UDA MASAHITO , UDA TAKESHI , KANEHISA OSAMU , SHIIKI MASATOSHI
IPC分类号： G02F1/015 , G02F1/025 , G02F1/17 , G11B7/00 , G11B7/004 , G11B7/0055 , G11B7/30 , G11B9/00 , G11C13/04 , H01L21/8247 , H01L29/78 , H01L29/788 , H01L29/792
摘要： PURPOSE:To enable fast recording, reproduction, and erasure even nearly at room temperature and even by low-intensity light irradiation by employing a quantum well superlattice structure which includes a direct transition type semiconductor as a constituent element, and utilizing the exciton absorption of the direct transition type semiconductor. CONSTITUTION:The exciton absorption saturation phenomenon of the semiconductor optical device which has the quantum well superlattice structure is utilized to realize a fast, high-density nonvolatile information recording device capable of writing at the room temperature. Namely, the quantum well superlattice structure 3 is formed of the direct transition type semiconductor and irradiated with light which resonates with the absorption wavelength of exciton absorption rays 1 of the direct transition type semiconductor to record and reproduce information at high speed. This quantum well superlattice structure 3 is provided and then the film thickness and composition of the superlattice are controlled to cause the exciton absorption phenomenon which is caused only at low temperature in a bulk even at the room temperature, so that information can be recorded and reproduced even at the room temperature with even with low-intensity light.

15. 发明专利

JPH01267998A FILM TYPE ELECTROLUMINESCENCE ELEMENT 失效
公开(公告)号：JPH01267998A
公开(公告)日：1989-10-25
申请号：JP9553788
申请日：1988-04-20
申请人： HITACHI LTD
发明人： SHIIKI MASATOSHI , ISHIDA MASAHITO , KANEHISA OSAMU
IPC分类号： H05B33/22 , H05B33/12
摘要： PURPOSE:To accomplish high efficiency of carrier injection into a light emitting layer and enhance the brightness in light emission by forming a photoconductive film presenting the avalanche doubling phenomenon between the light emitting layer and one of the electrodes. CONSTITUTION:A polycrystalline selenium layer 5 to be interposed between an electrode 6 and a light emitting layer 4 is made of amorphous selenium. Therein the electric field of the light emitting layer 4 of electroluminescence element when a voltage in the light emitting range is impressed, is clamped to 1-2X10 V/cm. That is, the amorphous selenium presents the avalanche doubling phenomenon when an electric field in this range 1-2X10 V/cm is impressed, to enable generation of a number of carriers. Also amorphous silicon can be names as photoconductive film 5 producing the avalanche doubling phenomenon. Thus many carriers can be supplied under high electric field, which raises the light emission brightness of a film type electroluminescence element.

16. 发明专利

JPS6433885A THIN FILM ELECTROLUMINESCENCE ELEMENT 失效
公开(公告)号：JPS6433885A
公开(公告)日：1989-02-03
申请号：JP18752487
申请日：1987-07-29
申请人： HITACHI LTD
发明人： YAMAMOTO AKIRA , KANEHISA OSAMU , NISHIDA TAKASHI
IPC分类号： H05B33/22 , H05B33/12 , H05B33/24
摘要： PURPOSE:To make a dead layer thin and reduce the drive voltage by specifying a material constituting a substrate, an electrode and an insulating layer material. CONSTITUTION:A material constituting a substrate serving as the growth substrate of insulating layer crystals or an electrode and an insulating layer material both belong to the cubic system crystal structure, and the lattice constant of the insulating layer material or its double has the consistency within 2% with the lattice constant of the electrode material. The insulating layer with good crystallization is thereby grown through the void section of the electrode, and the crystallization of the insulating layer deposited on the electrode is improved on the average. The crystallization of a luminous layer at the initial time of the growth is also improved as a result of its effect when compared with the growth on the insulating layer on the ITO.

17. 发明专利

JPS61195585A MANUFACTURE OF ELECTROLUMINESCENCE PANEL 失效
公开(公告)号：JPS61195585A
公开(公告)日：1986-08-29
申请号：JP3456785
申请日：1985-02-25
申请人： HITACHI LTD
发明人： UDA MASAHITO , KANEHISA OSAMU , YAMAMOTO AKIRA
IPC分类号： H05B33/10

18. 发明专利

JPS6059945B2 失效
公开(公告)号：JPS6059945B2
公开(公告)日：1985-12-27
申请号：JP11267677
申请日：1977-09-21
申请人： HITACHI LTD
发明人： KANEHISA OSAMU , KANO TAKESHI , NAKANO MASAKI , YAMAMOTO AKIRA , YAMADA TAKAKI , MANABE TOSHIKATSU , MATSUBARA HIROKAZU
IPC分类号： C09K11/08 , H01J29/20

19. 发明专利

JPS55157678A PREPARATION OF FLUORESCENT SUBSTANCE 失效
公开(公告)号：JPS55157678A
公开(公告)日：1980-12-08
申请号：JP6502879
申请日：1979-05-28
申请人： HITACHI LTD
发明人： YAMADA HIROMICHI , SUZUKI ATSUSHI , YAMAMOTO AKIRA , KANOU TAKESHI , NAKANO MASAKI , KANEHISA OSAMU
IPC分类号： C09K11/08 , C01F17/00
摘要： PURPOSE:To obtain a fluorescent substance having a high efficiency and brightness, by replacing yttrium and terbium oxides party with phosphates thereof, and by incorporating specific amounts of sulfur and an alkali metal salt of flux with the mixture. CONSTITUTION:3-30 atomic percent of the total number of atoms of Ln and M are replaced by at least one compound of phosphates of Ln and M. The mixture of Ln and M oxides (or compounds capable of forming oxides by heating), the phosphate and a compound capable of forming an alkali metal sulfide is then in corporated with 0.7-2.2mol of an alkali metal salt and 2.2-7mol of sulfur based on one mole of the formed fluorescent substance. The resulting mixture is preferably calcined at 1,000-1,250 deg.C to give the objective substance of formula (Ln is yttrium, gadolinium or lanthanum; M is terbium or praseodymiun; 0.00003

20. 发明专利

JPS5278784A SYNTHESIS OF FLUORESCENT SUBSTANCE 失效
公开(公告)号：JPS5278784A
公开(公告)日：1977-07-02
申请号：JP15506475
申请日：1975-12-26
申请人： HITACHI LTD
发明人： YAMADA SHIYOUSHIYU , YAMAMOTO AKIRA , KANOU TAKESHI , NAKANO MASAKI , KANEHISA OSAMU , TSUJI ROKUROU
IPC分类号： C09K11/08
摘要： PURPOSE:To produce a large quantity of fluorescent substance of high brightness and of large particle diameter by specifying the ratio of mixing a flux and sulfur to the fluorescent substace to be produced.

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