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11. 发明专利

JPS52131456A FORMING METHOD OF ELECTRODE 失效
公开(公告)号：JPS52131456A
公开(公告)日：1977-11-04
申请号：JP4766776
申请日：1976-04-28
申请人： HITACHI LTD
发明人： MIYAMOTO KEIJI , KATOU HIROSHI , INABA YOSHIHARU
IPC分类号： H01L21/60 , H01L21/28
摘要： PURPOSE:To prevent the side etching of the foundation layer, the deterioration of the junction intensity, the exfoliation of vamp electrode and the corrosion of wiring layer respectively, by forming the electrode in such a way that it may extend up to the area around the mask hole on the foundation layer made of nicrome and gold.

12. 发明专利

JPS52115177A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS52115177A
公开(公告)日：1977-09-27
申请号：JP3122176
申请日：1976-03-24
申请人： HITACHI LTD
发明人： ASHIKAWA KAZUTOSHI , KATOU HIROSHI
IPC分类号： H01L21/60 , G05D3/00 , G05D3/12 , H01L23/48
摘要： PURPOSE:To reduce the amount of using Au and make posslbe equally accurate pattern identification as in conventional devices by making an annular ring electrode with a Pt layer which makes specular reflection of light and providing an Au layer which makes irregular reflection of light, over a part thereof.

13. 发明专利

JPS52114539A METHOD OF SELECTIVELY ETCHING PLATINUM LAYERS 失效
公开(公告)号：JPS52114539A
公开(公告)日：1977-09-26
申请号：JP3122076
申请日：1976-03-24
申请人： HITACHI LTD
发明人： ASHIKAWA KAZUTOSHI , KOBAYASHI MASAMICHI , KATOU HIROSHI
IPC分类号： C23F1/00 , C23F1/02

14. 发明专利

JPS5265783A EQUIPMENT FOR EVAPORATION BY ELECTRON BEAM 失效
公开(公告)号：JPS5265783A
公开(公告)日：1977-05-31
申请号：JP14167075
申请日：1975-11-28
申请人： HITACHI LTD
发明人： KATOU HIROSHI , ASHIKAWA KAZUTOSHI , NAKAMURA YOUICHI , YOSHIDA HIROBUMI
IPC分类号： C23C14/30
摘要： PURPOSE:To develop equipment for evaporation by electron beam by setting a shield made of specific material, protecting a body to be coated from fluorescent X0ray from the shutter.

15. 发明专利

JPS5258081A APPARATUS FOR ATTACHING THIN FILM 失效
公开(公告)号：JPS5258081A
公开(公告)日：1977-05-13
申请号：JP13409275
申请日：1975-11-10
申请人： HITACHI LTD
发明人： ASHIKAWA KAZUTOSHI , KATOU HIROSHI
IPC分类号： C23C14/32
摘要： PURPOSE:To form thin adhesive metallized films on various substrates by acclerating evaporated ions generated in a discharge region.

16. 发明专利

JPS5212588A PRODUCTION METHOD OF SEMIICONDUCTOR DEVICE 失效
公开(公告)号：JPS5212588A
公开(公告)日：1977-01-31
申请号：JP8830375
申请日：1975-07-21
申请人： HITACHI LTD
发明人： KATOU TOKIO , KATOU HIROSHI
IPC分类号： H01L21/768 , H01L21/302 , H01L21/306
摘要： PURPOSE:In a semi-conductor device with a multilayer wiring, to prevent the production of hillocks by forming a non-porous alminum oxide film on the surface of Al wiring, and besides to prevent the production of a crack of a film (SOG (Spin on Glass) + PSG (phospho-silicate glass) to be formed on the above aluminium oxide film.

17. 发明专利

JPS59227429A AUTOMATIC APPARATUS OF INJECTION MOLDING WORK 失效
公开(公告)号：JPS59227429A
公开(公告)日：1984-12-20
申请号：JP10348883
申请日：1983-06-09
申请人： HITACHI LTD
发明人： SUZUKI TADASHI , NAKADA TAISUKE , KATOU HIROSHI
IPC分类号： B29C35/00 , B29C45/00 , B29C45/14 , B29C45/42 , B29F1/00
摘要： PURPOSE:To attain the full-automation of injection work over a multi-process of a product including insert parts, by providing a means for controlling a servo motor so as to coincide both contents of a memory means with respect of the objective position and the present position of a holding mechanism. CONSTITUTION:When a mold 13 is opened in a definite amount, a handle 21 is fallen between the movable side 40 and the fixed side 41 of the mold 13. The falling point thereof is preliminarily inputted to the memory 43 in a control part 39. In this case, the pulse number of a present position is detected by a pulse detecting part 50 to be compared with an objective position in an operation part and a product is taken out from the moving side 40 by the handle 21 at a point where the objective value is coincided with the present position. When the product is taken out, in order to insert parts to the fixed side 41, a signal is outputted to a servo motor 18 from a pulse signal correcting means 54 until the object value and a present value are coincided and the insert parts are inserted at the coincided point by the handle 21. Thereafter, similar correction is repeated to allow the product to advance to the next step.

18. 发明专利

JPS59218761A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS59218761A
公开(公告)日：1984-12-10
申请号：JP8944684
申请日：1984-05-07
申请人： HITACHI LTD
发明人： KATOU HIROSHI
IPC分类号： H01L21/60 , H01L23/532 , H01L23/48
摘要： PURPOSE:To obtain a semiconductor device in which no crack occurs in a passivation film when bonding by forming a bonding pad on not a passivation film but a thermally oxidized film directly, thereby eliminating the influence of a load when bonding directly to the passivation film. CONSTITUTION:A thermally oxidized film 7 of an insulating film is formed on the surface of an N type semiconductor layer 2, an N type semiconductor layer region 2a, a base layer 5, an emitter layer 6 are respectively partly exposed to form a contacting hole at the film 7. Aluminum layers are respectively formed in the holes, and extended on the layer 7 to form wiring layers 8. A passivation film 9 is formed over the formed region of the layer 8, and part of the surface is opened to expose the end 8' of the layer 8. The end 8' is connected with corrosion resistant metal such as a Pt layer 10, and a Ta layer 11 is interposed under the layer 10 so as to strengthen the bondability of the film 9 to the layer 7. An Au layer 13 is formed on the layer 10 extended to the layer 7 to form a bonding pad unit.

19. 发明专利

JPS58103732A METHOD OF PRODUCING ARC EXTINGUISHING CHAMBER 失效
公开(公告)号：JPS58103732A
公开(公告)日：1983-06-20
申请号：JP20162981
申请日：1981-12-16
申请人： HITACHI LTD , HITACHI OMIKA DENKI , NITSUTOU ZETSUEN KK
发明人： KATOU HIROSHI , NAKANO TSUGITOSHI , SATOU NAOKI
IPC分类号： H01H33/72 , H01H33/08 , H01H33/70 , H01H33/73 , H01H33/74

20. 发明专利

JPS5877259A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS5877259A
公开(公告)日：1983-05-10
申请号：JP17566881
申请日：1981-11-04
申请人： HITACHI LTD
发明人： SAITOU KATSUTOSHI , MORI MITSUHIRO , MORI TAKAO , SATOU NOBU , KOBAYASHI MASAYOSHI , CHIBA KATSUAKI , KATOU HIROSHI , KOBAYASHI MASAMICHI
IPC分类号： H01L29/43 , H01L21/28 , H01L29/45 , H01S5/00 , H01S5/042
摘要： PURPOSE:To prevent the separation of a wiring of semiconductor device by a method wherein a binder of thin film of Ti, Cr, etc., having favorable adhesion is provided between a barrier metal of Mo, etc., and the metal wiring. CONSTITUTION:An N type GaAlAs clad layer 6, an N type GaAlAs active layer 7, a P type GaAlAs clad layer 8, and an N type GaAs layers 9 are formed on an N type GaAs substrate 1 according to the liquid phase growth method, a mask 10 having a slender opening of 2mum width is provided on the layer 9, and Zn is diffused to form a P type layer 11. Then an ohmically connecting layer 12 of Ti or Cr, an Mo barrier metal layer 4, and a binder layer 13 of Ti or Cr are evaporated in order, and an electrode wiring layer 4 of Au or Ag is adhered. After thickness of the substrate 1 is regulated to about 100mum, an AuGe layer 14, an Ni layer 15 are evaporated, a binder layer 13 of Ti or Cr is accumulated, and an electrode 5 of Au or Ag is adhered to complete. By this constitution, the separation of the electrode wiring can be prevented.

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