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11. 发明申请

US20080117945A1 SEMICONDUCTOR LASER, METHOD OF MANUFACTURING SEMICONDUCTOR LASER, OPTICAL PICKUP AND OPTICAL DISK SYSTEM 有权
标题翻译：半导体激光器，制造半导体激光器的方法，光学拾取和光盘系统
公开(公告)号：US20080117945A1
公开(公告)日：2008-05-22
申请号：US11936431
申请日：2007-11-07
申请人： Masaru Kuramoto
发明人： Masaru Kuramoto
IPC分类号： H01S5/22 , H01L21/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0021 , H01S5/0657 , H01S5/0658 , H01S5/2009 , H01S5/22 , H01S5/3063 , H01S5/3213 , H01S5/3216 , H01S2304/04
摘要： A semiconductor laser using a nitride type Group III-V compound semiconductor includes: an n-side clad layer; an n-side optical waveguide layer over the n-side clad layer; an active layer over the n-side optical waveguide layer; a p-side optical waveguide layer over the active layer; an electron barrier layer over the p-side optical waveguide layer; and a p-side clad layer over the electron barrier layer. A ridge stripe is formed at an upper part of the p-side optical waveguide layer, the electron barrier layer and the p-side clad layer, and the distance between the electron barrier layer and a bottom surface in areas on both sides of the ridge stripe is not less than 10 nm.
摘要翻译：使用氮化物类III-V族化合物半导体的半导体激光器包括：n侧覆层; 在n侧覆盖层上的n侧光波导层; 在n侧光波导层上的有源层; 有源层上的p侧光波导层; p侧光波导层上的电子势垒层; 以及电子势垒层上的p侧覆层。在p侧光波导层，电子阻挡层和p侧覆层的上部形成有脊条，并且在脊的两侧的区域中形成电子势垒层与底面之间的距离条纹不小于10nm。

12. 发明申请

US20060011903A1 Nitride based semiconductor light-emitting device 有权
标题翻译：氮化物基半导体发光器件
公开(公告)号：US20060011903A1
公开(公告)日：2006-01-19
申请号：US11232019
申请日：2005-09-22
申请人： Atsushi Yamaguchi , Masaru Kuramoto , Masaaki Nido
发明人： Atsushi Yamaguchi , Masaru Kuramoto , Masaaki Nido
IPC分类号： H01L29/06
CPC分类号： B82Y20/00 , H01L33/32 , H01S5/34333 , H01S2304/12
摘要： The present invention provides a semiconductor device having a semiconductor multi-layer structure which includes at least an active layer having at least a quantum well, and the active layer further including at least a luminescent layer of InxAlyGa1-x-yN (0
摘要翻译：本发明提供一种具有半导体多层结构的半导体器件，其至少包括具有至少一个量子阱的有源层，并且所述有源层还包括至少一个In x Al 其中，所述至少量子阱中的每一个的阈值模式增益为（1≤x≤1,0≤y≤0.2），其中，不超过12cm -1，并且其中至少发光层的带隙能量中的微观波动的标准偏差在75meV至200meV的范围内。

13. 发明授权

US06642546B2 Nitride based semiconductor device and method of forming the same 有权
标题翻译：基于氮化物的半导体器件及其形成方法
公开(公告)号：US06642546B2
公开(公告)日：2003-11-04
申请号：US09810546
申请日：2001-03-19
申请人： Masaru Kuramoto , Atsushi Yamaguchi
发明人： Masaru Kuramoto , Atsushi Yamaguchi
IPC分类号： H01L2922
CPC分类号： H01L33/32 , H01S5/32341
摘要： The present invention provides a semiconductor device comprising: a base layer made of a gallium nitride-based material; a cladding layer extending over the base layer; and an active layer extending over the cladding layer, and the active layer including at least a photo-luminescent layer of InxAlyGa1−x−yN (0
摘要翻译：本发明提供一种半导体器件，包括：由氮化镓基材料制成的基底层; 在所述基底层上延伸的覆层; 以及在所述包覆层上延伸的有源层，并且所述有源层至少包括In x Al y Ga 1-x-y N（0 = 1.0×10 <（m 2）。

14. 发明授权

US6078062A II-VI compound semiconductor based light emitting device having recombination regions spatially arrayed in a planar direction of the active layer to prevent crack propagation 失效
标题翻译： II-VI族化合物半导体发光元件具有在有源层的平面方向上空间排列的复合区域，以防止裂纹扩展
公开(公告)号：US6078062A
公开(公告)日：2000-06-20
申请号：US936921
申请日：1997-09-25
申请人： Masaru Kuramoto , Kenichi Nishi , Hiroshi Iwata
发明人： Masaru Kuramoto , Kenichi Nishi , Hiroshi Iwata
IPC分类号： H01L33/16 , H01L33/28 , H01L33/30 , H01L33/40 , H01S5/00 , H01S5/327 , H01L33/00
CPC分类号： H01L33/24 , H01L33/28
摘要： Provided by the present invention is a II-VI compound semiconductor based light emitting device which is suppressed in the propagation velocity of crystal defects at the time of current application, has a prolonged lifetime and can be readily mass produced. The device has a recombination region and non-recombination region of carriers which have been separated spatially each other in the plane of the active layer.
摘要翻译：本发明提供一种在施加电流时抑制晶体缺陷的传播速度的II-VI族化合物半导体发光器件，其寿命延长并且可以容易地批量生产。该器件具有在有源层的平面中彼此空间分离的载流子的复合区域和非复合区域。

15. 发明授权

US09153938B2 Laser diode assembly and semiconductor optical amplifier assembly 有权
标题翻译：激光二极管组件和半导体光放大器组件
公开(公告)号：US09153938B2
公开(公告)日：2015-10-06
申请号：US13248741
申请日：2011-09-29
申请人： Hiroyuki Yokoyama , Shunsuke Kono , Masaru Kuramoto
发明人： Hiroyuki Yokoyama , Shunsuke Kono , Masaru Kuramoto
IPC分类号： H01S5/065 , B82Y20/00 , H01S5/14 , H01S5/00 , H01S5/028 , H01S5/042 , H01S5/0625 , H01S5/10 , H01S5/16 , H01S5/20 , H01S5/22 , H01S5/30 , H01S5/32 , H01S5/343 , H01S5/50
CPC分类号： H01S5/0657 , B82Y20/00 , H01S5/0064 , H01S5/0071 , H01S5/0078 , H01S5/028 , H01S5/0425 , H01S5/06251 , H01S5/101 , H01S5/1014 , H01S5/1085 , H01S5/141 , H01S5/16 , H01S5/2009 , H01S5/22 , H01S5/3063 , H01S5/309 , H01S5/3211 , H01S5/3216 , H01S5/34333 , H01S5/50 , H01S2301/176
摘要： A laser diode assembly includes a mode-locked laser diode device, where a light output spectrum shows long-wavelength shift by self-phase modulation, an external resonator, and a wavelength selective element. A long wavelength component of a pulsed laser beam emitted through the external resonator from the mode-locked laser diode device is extracted by the wavelength selective element, and output to the outside.
摘要翻译：激光二极管组件包括锁模激光二极管器件，其中光输出光谱通过自相位调制显示长波长偏移，外部谐振器和波长选择元件。通过外部谐振器从锁模激光二极管器件发射的脉冲激光束的长波长分量由波长选择元件提取，并输出到外部。

16. 发明授权

US08989228B2 Laser diode device, method of driving the same, and laser diode apparatus 有权
标题翻译：激光二极管装置及其驱动方法以及激光二极管装置
公开(公告)号：US08989228B2
公开(公告)日：2015-03-24
申请号：US12828403
申请日：2010-07-01
申请人： Masaru Kuramoto , Tomoyuki Oki , Tomoya Sugahara , Hiroyuki Yokoyama
发明人： Masaru Kuramoto , Tomoyuki Oki , Tomoya Sugahara , Hiroyuki Yokoyama
IPC分类号： H01S5/00 , H01S5/062 , B82Y20/00 , H01S5/06 , H01S5/0625 , H01S5/20 , H01S5/343
CPC分类号： H01S5/06216 , B82Y20/00 , H01S5/0602 , H01S5/06253 , H01S5/2009 , H01S5/34333
摘要： An ultrashort pulse and ultrahigh power laser diode device capable of outputting pulse laser light having higher peak power with a simple composition and a simple structure is provided. The laser diode device includes: a laminated structure composed of a first compound semiconductor layer containing n-type impurity, an active layer having a quantum well structure, and a second compound semiconductor layer containing p-type impurity; a first electrode electrically connected to the first compound semiconductor layer; and a second electrode electrically connected to the second compound semiconductor layer, wherein the second compound semiconductor layer is provided with an electron barrier layer having a thickness of 1.5*10−8 m or more, and driving is made by a pulse current having a value 10 or more times as large as a threshold current value.
摘要翻译：提供了一种能够以简单的组成和简单结构输出具有较高峰值功率的脉冲激光的超短脉冲和超高功率激光二极管装置。激光二极管装置包括：由包含n型杂质的第一化合物半导体层，具有量子阱结构的有源层和含有p型杂质的第二化合物半导体层构成的层叠结构; 电连接到第一化合物半导体层的第一电极; 和与第二化合物半导体层电连接的第二电极，其中第二化合物半导体层设置有厚度为1.5×10 -8 m以上的电子势垒层，并且通过具有值的脉冲电流进行驱动大于阈值电流值的10倍以上。

17. 发明授权

US08982920B2 Submount, submount assembly, and submount assembling method 有权
标题翻译：子安装，底座装配和底座组装方法
公开(公告)号：US08982920B2
公开(公告)日：2015-03-17
申请号：US13364957
申请日：2012-02-02
申请人： Hideki Watanabe , Rintaro Koda , Masaru Kuramoto , Kaori Naganuma , Hiroyuki Yokoyama
发明人： Hideki Watanabe , Rintaro Koda , Masaru Kuramoto , Kaori Naganuma , Hiroyuki Yokoyama
IPC分类号： H01S5/00 , H01S5/22 , B82Y20/00 , H01S5/022 , H01S5/026 , H01S5/028 , H01S5/042 , H01S5/065 , H01S5/14 , H01S5/34 , H01S5/343 , H01S5/40 , H01S5/50
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/02268 , H01S5/02272 , H01S5/0265 , H01S5/0287 , H01S5/0425 , H01S5/0657 , H01S5/141 , H01S5/342 , H01S5/34333 , H01S5/4006 , H01S5/50 , H01S2301/176
摘要： A submount having a structure and a configuration resistant to an increase in manufacturing cost and a reduction in yields or reliability, and including an oblique waveguide is provided. A submount having a first surface and allowing a semiconductor light-emitting element including a waveguide to be fixed on the first surface, the waveguide having an axis line inclined at θWG (degrees) with respect to a normal to a light-incident/emission end surface of the semiconductor light-emitting element, and made of a semiconductor material with a refractive index nLE, the submount includes: a fusion-bonding material layer on the first surface; and an alignment mark formed in the fusion-bonding material layer, the alignment mark allowed to be recognized at an angle θSM=sin−1 [nLE·sin(θWG)/n0], where a refractive index of a light-transmitting medium in proximity to the outside of the light-incident/emission end surface of the semiconductor light-emitting element is n0.
摘要翻译：提供了具有抵抗制造成本增加和产量或可靠性降低的结构和结构的基座，并且包括倾斜波导。具有第一表面并且允许包括波导的半导体发光元件固定在第一表面上的基座，所述波导具有倾斜的轴线;相对于光入射/ 所述半导体发光元件的发射端面由折射率为nLE的半导体材料制成，所述基座包括：在所述第一表面上的熔接材料层; 以及形成在熔接材料层中的对准标记，使得能够以角度＆lt; SM = sin-1 [nLE·sin（＆amp; WG）/ n0]来识别对准标记，其中光的折射率在半导体发光元件的光入射/发射端面的外侧附近的发射介质为n0。

18. 发明授权

US08896002B2 Method for producing semiconductor laser, semiconductor laser, optical pickup, and optical disk drive 有权
标题翻译：半导体激光器，半导体激光器，光学拾取器和光盘驱动器的制造方法
公开(公告)号：US08896002B2
公开(公告)日：2014-11-25
申请号：US12568855
申请日：2009-09-29
申请人： Rintaro Koda , Masaru Kuramoto , Eiji Nakayama , Tsuyoshi Fujimoto
发明人： Rintaro Koda , Masaru Kuramoto , Eiji Nakayama , Tsuyoshi Fujimoto
IPC分类号： H01L33/00 , B82Y20/00 , H01S5/323 , H01S5/227 , H01S5/16 , H01S5/343
CPC分类号： H01S5/16 , B82Y20/00 , H01S5/168 , H01S5/2275 , H01S5/2277 , H01S5/34333
摘要： A method for producing a semiconductor laser having an edge window structure includes the steps of forming masks of insulating films on a nitride-based III-V compound semiconductor substrate including first regions and second regions periodically arranged in parallel therebetween; and growing a nitride-based III-V compound semiconductor layer in a region not covered by the masks. The first region between each two adjacent second regions has two or more positions, symmetrical with respect to a center line thereof, where laser stripes are to be formed. The masks are formed on one or both sides of each of the positions where the laser stripes are to be formed at least near a position where edge window structures are to be formed such that the masks are symmetrical with respect to the center line. The nitride-based III-V compound semiconductor layer includes an active layer containing at least indium and gallium.
摘要翻译：一种具有边缘窗结构的半导体激光器的制造方法，其特征在于，在氮化物系III-V族化合物半导体基板上形成绝缘膜的掩模的工序，所述掩模包括第一区域和第二区域，以及在未被掩模覆盖的区域中生长氮化物III-V族化合物半导体层。每个两个相邻的第二区域之间的第一区域具有相对于其中心线对称的两个或更多个位置，其中将形成激光条纹。掩模形成在每个位置的一个或两侧上，其中激光条形成至少靠近要形成边缘窗口结构的位置，使得掩模相对于中心线对称。基于氮化物的III-V族化合物半导体层包括至少含有铟和镓的活性层。

19. 发明授权

US08831055B2 Self-oscillating semiconductor laser device and driving method thereof 有权
标题翻译：自振半导体激光器件及其驱动方法
公开(公告)号：US08831055B2
公开(公告)日：2014-09-09
申请号：US13035585
申请日：2011-02-25
申请人： Hideki Watanabe , Masaru Kuramoto , Takao Miyajima , Hiroyuki Yokoyama
发明人： Hideki Watanabe , Masaru Kuramoto , Takao Miyajima , Hiroyuki Yokoyama
IPC分类号： H01S3/13 , H01S5/30 , H01S5/343
CPC分类号： H01S5/3407 , H01S5/0601 , H01S5/30 , H01S5/343
摘要： There is provided a driving method of a self-oscillating semiconductor laser device including a first compound semiconductor layer having a first conductive type and composed of a GaN base compound semiconductor, a third compound semiconductor layer and a second compound semiconductor layer configuring an emission region and a saturable absorption region, are successively laminated, a second electrode formed on the second compound semiconductor layer, and a first electrode electrically connected to the first compound semiconductor layer. The second electrode is separated into a first portion to create a forward bias state by passing current to the first electrode via the emission region and a second portion to apply an electric field to the saturable absorption region by a separation groove. The current greater than a current value where kink is occurred in optical output-current characteristics is to be passed to the first portion of the second electrode.
摘要翻译：提供了一种自激振荡半导体激光器件的驱动方法，该器件包括具有第一导电类型并由GaN基化合物半导体构成的第一化合物半导体层，构成发光区域的第三化合物半导体层和第二化合物半导体层，依次层叠可饱和吸收区域，形成在第二化合物半导体层上的第二电极和与第一化合物半导体层电连接的第一电极。第二电极被分离为第一部分，以通过经由发射区域将电流传递到第一电极以产生正向偏置状态，以及第二部分，以通过分离槽将电场施加到可饱和吸收区域。大于在光输出电流特性中发生扭结的当前值的电流将被传递到第二电极的第一部分。

20. 发明申请

US20130075772A1 LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US20130075772A1
公开(公告)日：2013-03-28
申请号：US13614646
申请日：2012-09-13
申请人： Rintaro Koda , Hideki Watanabe , Masaru Kuramoto , Shunsuke Kono , Takao Miyajima
发明人： Rintaro Koda , Hideki Watanabe , Masaru Kuramoto , Shunsuke Kono , Takao Miyajima
IPC分类号： H01L33/58
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/0218 , H01S5/0655 , H01S5/2031 , H01S5/34333 , H01S5/50 , H01S2301/166
摘要： Provided is a light-emitting device including (a) a layer structure obtained by sequentially growing on a base substrate a first compound semiconductor layer of a first conductivity type, (b) an active layer formed of a compound semiconductor, and (c) a second compound semiconductor layer of a second conductivity type; a second electrode formed on the second compound semiconductor layer; and a first electrode electrically connected to the first compound semiconductor layer. The layer structure formed of at least a part of the second compound semiconductor layer in a thickness direction of the second compound semiconductor layer. The first compound semiconductor layer has a thickness greater than 0.6 μm. A high-refractive index layer formed of a compound semiconductor material having a refractive index higher than a refractive index of a compound semiconductor material of the first compound semiconductor layer is formed in the first compound semiconductor layer.
摘要翻译：提供一种发光器件，其包括（a）通过在基底衬底上依次生长第一导电类型的第一化合物半导体层，（b）由化合物半导体形成的有源层，以及（c）第二导电类型的第二化合物半导体层; 形成在第二化合物半导体层上的第二电极; 和与第一化合物半导体层电连接的第一电极。所述层结构由所述第二化合物半导体层的至少一部分在所述第二化合物半导体层的厚度方向上形成。第一化合物半导体层的厚度大于0.6μm。在第一化合物半导体层中形成由折射率高于第一化合物半导体层的化合物半导体材料的折射率的化合物半导体材料形成的高折射率层。

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