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    • 14. 发明授权
    • Silicon carbide sintered body and method of manufacturing the same
    • 碳化硅烧结体及其制造方法
    • US4853299A
    • 1989-08-01
    • US903141
    • 1986-09-03
    • Toshiaki MizutaniTakeyuki YonezawaHiroshi InoueAkihiko TsugeYoshiyuki Ohnuma
    • Toshiaki MizutaniTakeyuki YonezawaHiroshi InoueAkihiko TsugeYoshiyuki Ohnuma
    • C04B35/565
    • C04B35/565Y10S264/36
    • A silicon carbide sintered body containing not less than 0.03% by weight of boron, a total of not more than 0.3% by weight of metallic element impurities including the boron, not more than 1.0% by weight of free carbon, a total of not more than 0.15% by weight of non-metal impurities other than the free carbon, and the balance essentially consisting of silicon carbide, and having a density of not less 3.10 g/cm.sup.3. The sintered body is manufactured by heating a molding of a mixture containing a silicon carbide powder, a boron-containing sintering assistant, and a carbon-containing oxygen scavenger to a sintering temperature. The molded body is maintained at a temperature lower than the sintering temperature during the heating process until an oxide film covering the silicon carbide powder is substantially removed by the oxygen scavenger, and the molded body is then sintered at the sintering temperature under a non-pressurized condition.
    • 含有不少于0.03重量%的硼,总计不超过0.3重量%的包含硼的金属元素杂质,不超过1.0重量%游离碳的碳化硅烧结体,总计不超过 超过0.15重量%的除游离碳以外的非金属杂质,余量基本上由碳化硅组成,密度不小于3.10g / cm 3。 通过将含有碳化硅粉末,含硼烧结助剂和含碳氧清除剂的混合物的成型加热至烧结温度来制造烧结体。 成型体在加热过程中保持在低于烧结温度的温度,直到氧清除剂基本上除去覆盖碳化硅粉末的氧化膜,然后在未加压的烧结温度下将成型体烧结 条件。