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11. 发明申请

US20130260540A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：US20130260540A1
公开(公告)日：2013-10-03
申请号：US13879371
申请日：2012-02-23
申请人： Haruo Nakazawa , Masaaki Ogino , Hidenao Kuribayashi , Hideaki Teranishi
发明人： Haruo Nakazawa , Masaaki Ogino , Hidenao Kuribayashi , Hideaki Teranishi
IPC分类号： H01L21/02
CPC分类号： H01L21/02373 , C30B29/06 , C30B33/02 , H01L21/228 , H01L29/66333
摘要： A reverse blocking IGBT is manufactured using a silicon wafer sliced from a single crystal silicon ingot which is manufactured by a floating method using a single crystal silicon ingot manufactured by a Czochralski method as a raw material. A separation layer for ensuring a reverse blocking performance of the reverse blocking IGBT is formed by diffusing impurities implanted into the silicon wafer using a thermal diffusion process. The thermal diffusion process for forming the separation layer is performed in an inert gas atmosphere at a temperature equal to or more than 1290° C. and less than the melting point of silicon. In this way, no crystal defect occurs in the silicon wafer and it is possible to prevent the occurrence of a reverse breakdown voltage defect or a forward defect in the reverse blocking IGBT and thus improve the yield of a semiconductor element.
摘要翻译：使用由使用由Czochralski法制造的单晶硅锭作为原料的浮法制造的单晶硅锭切片的硅晶片制造反向阻断IGBT。用于确保反向阻断IGBT的反向阻塞性能的分离层是通过使用热扩散工艺扩散注入到硅晶片中的杂质来形成的。用于形成分离层的热扩散工艺在惰性气体气氛中在等于或高于1290℃并低于硅的熔点的温度下进行。以这种方式，在硅晶片中不会发生晶体缺陷，并且可以防止反向阻断IGBT中出现反向击穿电压缺陷或正向缺陷，从而提高半导体元件的产量。

12. 发明授权

US10115587B2 Method of manufacturing semiconductor device 有权
公开(公告)号：US10115587B2
公开(公告)日：2018-10-30
申请号：US13879371
申请日：2012-02-23
申请人： Haruo Nakazawa , Masaaki Ogino , Hidenao Kuribayashi , Hideaki Teranishi
发明人： Haruo Nakazawa , Masaaki Ogino , Hidenao Kuribayashi , Hideaki Teranishi
IPC分类号： H01L21/02 , C30B29/06 , C30B33/02 , H01L29/66 , H01L21/228
摘要： A reverse blocking IGBT is manufactured using a silicon wafer sliced from a single crystal silicon ingot which is manufactured by a floating method using a single crystal silicon ingot manufactured by a Czochralski method as a raw material. A separation layer for ensuring a reverse blocking performance of the reverse blocking IGBT is formed by diffusing impurities implanted into the silicon wafer using a thermal diffusion process. The thermal diffusion process for forming the separation layer is performed in an inert gas atmosphere at a temperature equal to or more than 1290° C. and less than the melting point of silicon. In this way, no crystal defect occurs in the silicon wafer and it is possible to prevent the occurrence of a reverse breakdown voltage defect or a forward defect in the reverse blocking IGBT and thus improve the yield of a semiconductor element.

13. 发明授权

US08501549B2 Method of manufacturing a reverse blocking insulated gate bipolar transistor 有权
标题翻译：制造反向阻挡绝缘栅双极晶体管的方法
公开(公告)号：US08501549B2
公开(公告)日：2013-08-06
申请号：US13537549
申请日：2012-06-29
申请人： Masaaki Ogino
发明人： Masaaki Ogino
IPC分类号： H01L21/332
CPC分类号： H01L29/7395 , H01L21/76237 , H01L29/0615 , H01L29/0661 , H01L29/402 , H01L29/66333
摘要： A method of manufacturing a reverse blocking insulated gate bipolar transistor to form an isolation layer for bending and extending a pn junction, which exhibits a high reverse withstand voltage, to the front surface side. This ensures a high withstand voltage in the reversed direction and reduces leakage current in the reversely biased condition. Formation of a tapered groove by an anisotropic alkali etching process is conducted, resulting in a semiconductor substrate left with a thickness of at least 60 μm between one principal surface and the bottom surface of the tapered groove formed from the other principal surface.
摘要翻译：制造反向阻挡绝缘栅双极晶体管的方法，以形成用于将表现出高反向耐受电压的pn结弯曲和延伸到前表面侧的隔离层。这确保了相反方向的高耐受电压，并且在相反的偏置状态下减少漏电流。通过各向异性碱蚀刻工艺形成锥形槽，导致在另一个主表面形成的锥形槽的一个主表面和底表面之间留下厚度至少为60微米的半导体衬底。

14. 发明授权

US6056656A V-ribbed belt 失效
标题翻译： V形肋带
公开(公告)号：US6056656A
公开(公告)日：2000-05-02
申请号：US33849
申请日：1998-03-03
申请人： Yoshiyuki Kitano , Masaaki Ogino
发明人： Yoshiyuki Kitano , Masaaki Ogino
IPC分类号： F16G5/20 , F16G1/04
CPC分类号： F16G5/20
摘要： A V-ribbed belt A is made up of a compression rubber 3, an adhesion rubber 1 laminated to the upper surface of the compression rubber 3, and a plurality of tension members 2 fixed by rubber of the adhesion rubber 1 to be held in place in the adhesion rubber 1 and arranged in the direction of the length of the belt. The upper surface of the adhesion rubber 1 is covered with a covering fabric-rubber composite B. All the rubber sections of the composite B are composed of a rubber compound formed by incorporating 5 to 15 phr of an adhesive prepared by mixing resorcinol or denatured resorcinol with a methylene donor, into H-NBR. The adhesion rubber 1 and the compression rubber 3 are composed of a rubber compound whose principal components are ACSM and carbon for achieving good belt back-face drive in high-temperature environment.
摘要翻译： V形肋带A由压缩橡胶3，层压到压缩橡胶3的上表面的粘合橡胶1和由粘合橡胶1的橡胶固定的多个张力构件2构成，以保持在适当位置在粘合橡胶1中并且沿着带的长度方向布置。粘合橡胶1的上表面覆盖有覆盖织物 - 橡胶复合材料B.复合材料B的所有橡胶部分由通过掺入5至15phr通过混合间苯二酚或变性间苯二酚制备的粘合剂形成的橡胶化合物与亚甲基供体进入H-NBR。粘合橡胶1和压缩橡胶3由主要成分为ACSM的橡胶组合物和用于在高温环境中实现良好的带背面驱动的碳的碳组成。

15. 发明授权

US5417619A Canvas-rubber complex, V-ribbed belt using it and method of producing V-ribbed belt 失效
标题翻译：帆布橡胶复合体，V型肋带及其生产V型带的方法
公开(公告)号：US5417619A
公开(公告)日：1995-05-23
申请号：US238691
申请日：1994-05-05
申请人： Yoshitaka Tajima , Masaaki Ogino , Yuji Takahara , Shizuaki Tsuruta , Kanji Kimoto , Kazuyoshi Tani
发明人： Yoshitaka Tajima , Masaaki Ogino , Yuji Takahara , Shizuaki Tsuruta , Kanji Kimoto , Kazuyoshi Tani
IPC分类号： F16G5/08 , F16G1/28 , F16G5/06 , F16G5/20 , F16G1/00
CPC分类号： F16G5/20 , F16G1/28
摘要： A canvas-rubber complex provided on an upper face of a tension rubber on a back side of V-ribbed belt is composed of a covering canvas, impregnation rubber with which the covering canvas is impregnated, an outer rubber layer which is applied to a first face of the covering canvas which is located on the back face's side of the belt, an inner rubber layer which is applied to a second face of the covering canvas which is the back of the first face, and an adhesion rubber layer disposed on a side of the inner rubber layer for adhering the canvas-rubber complex to the upper face of the tension rubber. Among the rubber elements excepting the adhesion rubber layer, at least the outer rubber layer is formed of a rubber composition including as main ingredients thereof CR polymer, hard carbon and conductive carbon.
摘要翻译：设置在V形肋带背面的张力橡胶的上表面上的帆布橡胶复合体由覆盖帆布，被浸渍的覆盖帆布的浸渍橡胶，涂覆在第一层上的外层橡胶层位于带的背面侧的覆盖帆布的表面，施加到作为第一面的背面的覆盖帆布的第二面的内部橡胶层，以及设置在第一面的背面的粘合橡胶层的内部橡胶层，用于将帆布橡胶复合体粘附到张力橡胶的上表面。在除了粘合橡胶层之外的橡胶元件中，至少外部橡胶层由包含作为其主要成分的CR聚合物，硬碳和导电性碳的橡胶组合物形成。

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