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11. 发明授权

US08653566B2 Solid-state imaging device 有权
标题翻译：固态成像装置
公开(公告)号：US08653566B2
公开(公告)日：2014-02-18
申请号：US13611953
申请日：2012-09-12
申请人： Hirohisa Ohtsuki
发明人： Hirohisa Ohtsuki
IPC分类号： H01L27/148
CPC分类号： H01L27/14603 , H01L27/14636 , H01L27/14643
摘要： The present invention provides a solid-state imaging device in which high S/N is achieved. A solid-state imaging device includes a photodiode, a transfer transistor, a floating diffusion, a floating diffusion wiring, an amplifying transistor, a power line, and first output signal lines, in which the first output signal lines are formed one on each side of the floating diffusion wiring in a layer having the floating diffusion wiring formed on a semiconductor substrate, and the power line is formed above the floating diffusion wiring.
摘要翻译：本发明提供了一种实现高S / N的固态成像装置。固态成像装置包括光电二极管，传输晶体管，浮动扩散，浮动扩散布线，放大晶体管，电源线和第一输出信号线，其中第一输出信号线在每一侧形成的浮动扩散布线形成在半导体衬底上形成有浮动扩散布线的层中，并且电源线形成在浮置扩散布线的上方。

12. 发明申请

US20120314109A1 SOLID-STATE IMAGING DEVICE AND CAMERA 审中-公开
标题翻译：固态成像装置和摄像机
公开(公告)号：US20120314109A1
公开(公告)日：2012-12-13
申请号：US13592943
申请日：2012-08-23
申请人： Masashi MURAKAMI , Hirohisa Ohtsuki , Makota Ikuma
发明人： Masashi MURAKAMI , Hirohisa Ohtsuki , Makota Ikuma
IPC分类号： H01L27/146 , H04N5/335
CPC分类号： H01L27/1464 , H01L27/14603 , H01L27/14623 , H01L27/14641 , H04N5/335 , H04N5/357 , H04N5/378
摘要： The present invention implements a solid-state imaging device and a camera which develop lower noise. The solid-state imaging device includes unit cells which are arranged in two dimensions. Each of the unit cells includes: a photoelectric converting element which photoelectrically converts incident light; and amplifying transistors each of which outputs a signal voltage according to signal charges of the photoelectric converting element. The photoelectric converting element is electrically connected in common with gates of the amplifying transistors.
摘要翻译：本发明实现了产生较低噪声的固态成像装置和照相机。固态成像装置包括以二维排列的单元电池。每个单元包括：光电转换元件，其对入射光进行光电转换; 以及放大晶体管，每个晶体管根据光电转换元件的信号电荷输出信号电压。光电转换元件与放大晶体管的栅极共同电连接。

13. 发明授权

US07910966B2 Solid state imaging device including a semiconductor substrate on which a plurality of pixel cells have been formed 有权
标题翻译：固态成像装置，包括其上形成有多个像素单元的半导体基板
公开(公告)号：US07910966B2
公开(公告)日：2011-03-22
申请号：US12425029
申请日：2009-04-16
申请人： Hirohisa Ohtsuki , Hiroyuki Doi , Motonari Katsuno
发明人： Hirohisa Ohtsuki , Hiroyuki Doi , Motonari Katsuno
IPC分类号： H01L31/062
CPC分类号： H01L27/14603 , H01L27/14621 , H01L27/14641
摘要： A solid state imaging device including a pixel region where a plurality of pixel cells 10r1, 10g1-10g3, 10b1-10b2 . . . have been formed. When focusing on a red pixel cell whose color filter has the longer transmission peak wavelength and a blue pixel cell whose color filter has the shorter transmission peak wavelength, the distribution of substrate contacts is denser in a region in the vicinity of a photodiode in the red pixel cell than a region in the vicinity of a photodiode in the blue pixel cell.
摘要翻译：一种固态成像装置，包括多个像素单元10r1,10g1-10g3,10b1-10b2的像素区域。。。已经形成。当滤色器具有较长透射峰值波长的红色像素单元和滤色器具有较短透射峰值波长的蓝色像素单元时，基板触点的分布在红色光电二极管附近的区域中更为密集像素单元比蓝色像素单元中的光电二极管附近的区域。

14. 发明授权

US07800191B2 Solid-state imaging device and method for driving the same 有权
标题翻译：固态成像装置及其驱动方法
公开(公告)号：US07800191B2
公开(公告)日：2010-09-21
申请号：US11716743
申请日：2007-03-12
申请人： Hirohisa Ohtsuki , Motonari Katsuno , Ryohei Miyagawa
发明人： Hirohisa Ohtsuki , Motonari Katsuno , Ryohei Miyagawa
IPC分类号： H01L31/042
CPC分类号： H01L27/14603 , H01L27/14636
摘要： A pixel array is provided in which cells are arranged in a matrix. Each cell includes a photodiode, an FD, a transfer transistor, a reset transistor, an amplifying transistor having a gate electrode connected to the FD, a drain connected to a power supply line, and a source connected to a vertical signal line, and an FD wire. The FD wire is provided in a first wiring line, and the vertical signal line is provided in a second wiring line positioned over the first wiring layer. Since the potential of the FD wire follows the potential of the vertical signal line, it is possible to suppress a variation in capacitance occurring in the FD when a position of the vertical signal is shifted, depending on a position of the cell.
摘要翻译：提供了像素阵列，其中单元被布置成矩阵。每个单元包括光电二极管，FD，传输晶体管，复位晶体管，具有连接到FD的栅电极的放大晶体管，连接到电源线的漏极和连接到垂直信号线的源，以及 FD线。 FD线设置在第一布线中，垂直信号线设置在位于第一布线层上的第二布线中。由于FD线的电位跟随垂直信号线的电位，所以根据单元的位置，当垂直信号的位置偏移时，有可能抑制在FD中发生的电容的变化。

15. 发明授权

US07906827B2 Solid-state imaging device 有权
标题翻译：固态成像装置
公开(公告)号：US07906827B2
公开(公告)日：2011-03-15
申请号：US12172548
申请日：2008-07-14
申请人： Motonari Katsuno , Ryohei Miyagawa , Hirohisa Ohtsuki
发明人： Motonari Katsuno , Ryohei Miyagawa , Hirohisa Ohtsuki
IPC分类号： H01L27/146
CPC分类号： H01L27/14603 , H01L27/14605 , H01L27/14609 , H01L27/14623 , H01L27/14627 , H01L27/14636 , H01L27/14643
摘要： A solid-state imaging device includes a first wiring layer, a second wiring layer, a substrate contact, and a first contact. The arrangement of the substrate contact with respect to a light-receiving section forming a peripheral pixel is shifted, or not shifted, from the arrangement of the substrate contact with respect to a light-receiving section forming a central pixel, by a shift amount r from the peripheral portion toward the central portion. The arrangement of the first contact with respect to the light-receiving section of the peripheral pixel is shifted from the arrangement of the first contact with respect to the light-receiving section of the central pixel, by a shift amount s1 from the peripheral portion toward the central portion. The shift amount s1 is greater than the shift amount r.
摘要翻译：固态成像装置包括第一布线层，第二布线层，基板接触和第一接触。衬底接触相对于形成周边像素的光接收部分的布置相对于形成中心像素的光接收部分从衬底接触件的布置偏移或不偏移移位量r 从周边部朝向中央部。第一接触件相对于周边像素的光接收部分的布置从第一接触件相对于中心像素的光接收部分的布置移位到从周边部分朝向中央部分。移位量s1大于移动量r。

16. 发明授权

US07847848B2 Solid-state imaging device having a plurality of lines formed in at least two layers on semiconductor substrate 失效
标题翻译：具有在半导体衬底上形成至少两层的多条线的固态成像器件
公开(公告)号：US07847848B2
公开(公告)日：2010-12-07
申请号：US11969527
申请日：2008-01-04
申请人： Hirohisa Ohtsuki , Ryohei Miyagawa , Motonari Katsuno , Mikiya Uchida
发明人： Hirohisa Ohtsuki , Ryohei Miyagawa , Motonari Katsuno , Mikiya Uchida
IPC分类号： H04N9/64 , H04N3/14 , H04N5/335 , H01L31/062
CPC分类号： H01L27/14603 , H01L27/14623 , H01L27/14643
摘要： In a MOS-type solid-state imaging device 1, in pixels 101 to 104 in which lines in an upper layer (charge transfer lines 1018 to 1048) are formed in shifted positions located toward a center L1 of an image area, each two oppositely disposed pixels with the center L1 of the image area sandwiched therebetween, such as a pixel 101 and a pixel 104 have the following relation. In each of the pixels 101 and 104, power supply lines 1016 and 1046, vertical signal lines 1017 and 1047, and charge transfer lines 1018 and 1048 relating to each of the pixels 101 and 104 are arranged symmetrically with respect to an imaginary plane extending from the center L1 of a sensor 10 in a direction orthogonal to the drawing page in an X-axis direction.
摘要翻译：在MOS型固态成像装置1中，在像素101〜104中，上层（电荷传输线1018〜1048）中的线形成在位于图像区域的中心L1的移位位置，位于像素101和像素104之间的图像区域的中心L1的位置像素具有以下关系。在每个像素101和104中，与像素101和104中的每一个相关的电源线1016和1046，垂直信号线1017和1047以及电荷传输线1018和1048相对于从传感器10的中心L1在X轴方向上与绘图页正交的方向上。

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