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11. 发明授权

US4769776A Apparatus for measuring the concentration of filamentous microorganisms in a mixture including microorganisms 失效
标题翻译：用于测量包含微生物的混合物中丝状微生物浓度的装置
公开(公告)号：US4769776A
公开(公告)日：1988-09-06
申请号：US900420
申请日：1986-08-26
申请人： Masakatsu Hiraoka , Kazushi Tsumura , Kenji Baba , Shoji Watanabe , Mikio Yoda , Naoki Hara
发明人： Masakatsu Hiraoka , Kazushi Tsumura , Kenji Baba , Shoji Watanabe , Mikio Yoda , Naoki Hara
IPC分类号： C02F3/34 , G01N15/00 , G01N15/02 , G01N15/14
CPC分类号： C02F3/34 , G01N15/02 , G01N15/0227 , G01N15/1468 , G01N2015/0057
摘要： The image of microorganisms contained in a sludge of an aeration tank is picked up by an image pickup device having the function of magnifying and picking up microorganism images. Binarizing processing is then made to obtain a binarized image from the resulting gray image, and the binarized image is subjected to thinning processing. The number of pixels of the image left after often the thinning processing is counted to measure the amount of filamentous microorganisms. In this manner, the amount of the filamentous microorganisms can be measured accurately irrespective of their thickness.
摘要翻译：曝气池污泥中包含的微生物的图像由具有放大和拾取微生物图像功能的图像拾取装置拾取。然后进行二值化处理以从所得到的灰度图像中获得二值化图像，并对二值化图像进行稀疏处理。经常进行稀释处理后留下的图像的像素数被计数以测量丝状微生物的量。以这种方式，可以精确地测量丝状微生物的量，而不管其厚度如何。

12. 发明授权

US08323845B2 Solid oxide electrolyte fuel cell plate structure, stack and electrical power generation unit 失效
标题翻译：固体氧化物电解质燃料电池板结构，堆叠和发电机组
公开(公告)号：US08323845B2
公开(公告)日：2012-12-04
申请号：US11495752
申请日：2006-07-31
申请人： Masaharu Hatano , Mitsugu Yamanaka , Fuminori Satou , Itaru Shibata , Keiko Kushibiki , Naoki Hara , Tatsuhiro Fukuzawa , Makoto Uchiyama
发明人： Masaharu Hatano , Mitsugu Yamanaka , Fuminori Satou , Itaru Shibata , Keiko Kushibiki , Naoki Hara , Tatsuhiro Fukuzawa , Makoto Uchiyama
IPC分类号： H01M8/10 , H01M2/18 , H01M2/08
CPC分类号： H01M8/0232 , H01M8/0236 , H01M8/0243 , H01M8/04089 , H01M8/1226 , H01M8/2425 , H01M2008/1293 , Y02P70/56
摘要： A solid electrolyte fuel cell plate structure includes a cell element layer composed of a solid electrolyte, an air electrode layer and a fuel electrode layer, a porous base body supporting the cell element layer, and a gas-impermeable member having electric conductivity. The cell element layer is arranged such that the solid electrolyte layer is sandwiched between the air electrode layer and the fuel electrode layer, with the air electrode layer or the fuel electrode layer being joined to the porous base body. The gas-impermeable member is associated with the solid electrolyte layer to allow gas internally passing through the porous base body to be separated from gas flowing outside the porous base body. Such a cell plate structure can be employed in a solid electrolyte fuel cell stack, which in turn can be employed in a solid electrolyte fuel cell electric power generation unit.
摘要翻译：固体电解质燃料电池板结构包括由固体电解质，空气电极层和燃料电极层构成的电池元件层，支撑电池元件层的多孔基体和具有导电性的气体不可渗透构件。电池元件层被布置成使得固体电解质层夹在空气电极层和燃料电极层之间，空气电极层或燃料电极层与多孔基体接合。气体不可渗透构件与固体电解质层相关联，以允许内部通过多孔基体的气体与在多孔基体外流动的气体分离。这样的电池板结构可以用在固体电解质燃料电池组中，其又可以用于固体电解质燃料电池发电单元。

13. 发明申请

US20070220963A1 Tire condition monitor device and method of manufacturing the same 有权
标题翻译：轮胎状态监测装置及其制造方法
公开(公告)号：US20070220963A1
公开(公告)日：2007-09-27
申请号：US11519146
申请日：2006-09-12
申请人： Satoshi Morita , Akira Momose , Naoki Hara , Shigeo Sase
发明人： Satoshi Morita , Akira Momose , Naoki Hara , Shigeo Sase
IPC分类号： G01M17/02
CPC分类号： C08G18/6204 , B60C23/0408 , B60C23/0494 , C08G18/6208 , C08G18/7671
摘要： A tire condition monitor device includes a circuit board mounted on a tire wheel for detecting a pneumatic pressure in an interior of a tire. The circuit board is covered with urethane resin. The urethane resin has finer resin meshes as compared with the conventional silicon resin serving as a board protecting resin. Since sulfur gas and water is hard to permeate through the urethane resin, gas barrier and dampproof properties can be improved. In a method of manufacturing the tire condition monitor device, a prebaking process is carried out before aboard protecting process of covering the circuit board with the urethane resin. Since moisture contained in the circuit board is vaporized, the circuit board covered with the urethane resin can reliably be protected from moisture.
摘要翻译：轮胎状态监视装置包括安装在轮胎车轮上的电路板，用于检测轮胎内部的气动压力。电路板用聚氨酯树脂覆盖。与用作板保护树脂的常规硅树脂相比，聚氨酯树脂具有更细的树脂网。由于硫气和水难以渗透通过聚氨酯树脂，因此可以提高阻气性和防潮性。在制造轮胎状态监视装置的方法中，在利用聚氨酯树脂覆盖电路板的保护处理之前进行预烘烤处理。由于包含在电路板中的水分蒸发，可以可靠地防止被聚氨酯树脂覆盖的电路板免受潮湿的影响。

14. 发明申请

US20060269822A1 Solid oxide electrolyte fuel cell plate structure, stack and electrical power generation unit 失效
公开(公告)号：US20060269822A1
公开(公告)日：2006-11-30
申请号：US11495752
申请日：2006-07-31
申请人： Masaharu Hatano , Mitsugu Yamanaka , Fuminori Satou , Itaru Shibata , Keiko Kushibiki , Naoki Hara , Tatsuhiro Fukuzawa , Makoto Uchiyama
发明人： Masaharu Hatano , Mitsugu Yamanaka , Fuminori Satou , Itaru Shibata , Keiko Kushibiki , Naoki Hara , Tatsuhiro Fukuzawa , Makoto Uchiyama
IPC分类号： H01M8/24 , H01M8/10
CPC分类号： H01M8/0232 , H01M8/0236 , H01M8/0243 , H01M8/04089 , H01M8/1226 , H01M8/2425 , H01M2008/1293 , Y02P70/56
摘要： A solid electrolyte fuel cell plate structure includes a cell element layer composed of a solid electrolyte, an air electrode layer and a fuel electrode layer, a porous base body supporting the cell element layer, and a gas-impermeable member having electric conductivity. The cell element layer is arranged such that the solid electrolyte layer is sandwiched between the air electrode layer and the fuel electrode layer, with the air electrode layer or the fuel electrode layer being joined to the porous base body. The gas-impermeable member is associated with the solid electrolyte layer to allow gas internally passing through the porous base body to be separated from gas flowing outside the porous base body. Such a cell plate structure can be employed in a solid electrolyte fuel cell stack, which in turn can be employed in a solid electrolyte fuel cell electric power generation unit.

15. 发明授权

US07122265B2 Single cell for fuel cell and solid oxide fuel cell 有权
公开(公告)号：US07122265B2
公开(公告)日：2006-10-17
申请号：US10181258
申请日：2001-11-22
申请人： Keiko Kushibiki , Fuminori Sato , Naoki Hara , Mitsugu Yamanaka , Masaharu Hatano , Makoto Uchiyama , Itaru Shibata , Tatsuhiro Fukuzawa
发明人： Keiko Kushibiki , Fuminori Sato , Naoki Hara , Mitsugu Yamanaka , Masaharu Hatano , Makoto Uchiyama , Itaru Shibata , Tatsuhiro Fukuzawa
IPC分类号： H01M8/10 , H01M8/12 , H01M8/02
CPC分类号： H01M8/2425 , H01M8/1213 , H01M8/1226 , H01M8/1231 , H01M8/1286 , H01M8/2404 , H01M8/2432 , H01M2300/0074 , Y02P70/56
摘要： A single cell for a solid oxide fuel cell, in which a solid electrolyte layer is sandwiched by an upper electrode layer and a lower electrode layer. This single cell includes a substrate having openings and an insulating and stress absorbing layer stacked on an upper surface of this substrate. The solid electrolyte layer is formed on an upper surface of the insulating and stress absorbing layer so as to cover the openings, the upper electrode layer is stacked on an upper surface of the solid electrolyte layer, and the lower electrode layer is coated on a lower surface of the solid electrolyte layer via the openings from a lower surface of the substrate. A cell plate, in which these single cells are disposed two-dimensionally on a common substrate. Furthermore, a solid oxide fuel cell, in which these cell plates and plate-shaped separators including gas passages on both surfaces thereof are alternately stacked.

16. 发明授权

US6071780A Compound semiconductor apparatus and method for manufacturing the apparatus 失效
标题翻译：化合物半导体装置及其制造方法
公开(公告)号：US6071780A
公开(公告)日：2000-06-06
申请号：US285778
申请日：1999-04-05
申请人： Naoya Okamoto , Hitoshi Tanaka , Naoki Hara
发明人： Naoya Okamoto , Hitoshi Tanaka , Naoki Hara
IPC分类号： H01L21/28 , H01L21/314 , H01L21/316 , H01L21/335 , H01L21/336 , H01L29/51
CPC分类号： H01L29/517 , H01L21/28158 , H01L21/28264 , H01L21/314 , H01L21/31604 , H01L29/66446 , H01L29/66522
摘要： An undoped GaAs layer and a GaAs active layer are formed on a GaAs semiconductor substrate in that order, and a surface of the GaAs active layer is inactivated. Thereafter, a wafer composed of the GaAs semiconductor substrate, the undoped G&As layer and the GaAs active layer is annealed at temperatures ranging from 570 to 580.degree. C. in a molecular beam epitaxy apparatus. Thereafter, the wafer is maintained at temperatures ranging from 350 to 500.degree. C., and an insulating layer made of amorphous GaAs is formed on the GaAs active layer while using tertiary-butyl-gallium-sulfide-cubane "((t-Bu)GaS).sub.4 " as a source of the insulating layer. Thereafter, the insulating layer is patterned according to a photo-lithography method to form a gate insulating layer on the GaAs active layer. Thereafter, a source electrode and a drain electrode are formed on both sides of the gate insulating layer to arrange the source and drain electrodes separated from each other on the GaAs active layer, and a gate electrode is formed on the gate insulating layer.
摘要翻译：在GaAs半导体衬底上依次形成未掺杂的GaAs层和GaAs有源层，GaAs活性层的表面失活。然后，在分子束外延装置中，将由GaAs半导体衬底，未掺杂的G＆As层和GaAs有源层构成的晶片在570〜580℃的温度下退火。此后，将晶片保持在350〜500℃的温度范围内，在GaAs活性层上形成由非晶GaAs形成的绝缘层，同时使用叔丁基硫化镓 - 立方体“（（t-Bu） GaS）4“作为绝缘层的源。此后，根据光刻法将绝缘层图案化，以在GaAs有源层上形成栅极绝缘层。然后，在栅极绝缘层的两侧形成源电极和漏电极，在GaAs有源层上排列相互分离的源电极和漏电极，在栅极绝缘层上形成栅电极。

17. 发明授权

US5943662A Supporting method and system for process operation 失效
标题翻译：过程操作的支持方法和系统
公开(公告)号：US5943662A
公开(公告)日：1999-08-24
申请号：US220546
申请日：1994-03-31
申请人： Kenji Baba , Ichiro Enbutsu , Shoji Watanabe , Hayao Yahagi , Fumio Maruhashi , Harumi Matsuzaki , Hiroshi Matsumoto , Shunsuke Nogita , Mikio Yoda , Naoki Hara
发明人： Kenji Baba , Ichiro Enbutsu , Shoji Watanabe , Hayao Yahagi , Fumio Maruhashi , Harumi Matsuzaki , Hiroshi Matsumoto , Shunsuke Nogita , Mikio Yoda , Naoki Hara
IPC分类号： G05B13/02 , G06F9/44 , G06F15/18 , G06N3/08 , G06N5/04 , G06N7/02
CPC分类号： G05B13/027 , G05B13/0285 , Y10S706/903 , Y10S706/906
摘要： A method and a system for causing a neural circuit model to learn typical past control results of a process and using the neural circuit model for supporting an operation of the process. The neural circuit model is caused to learn by using, as input signals, a typical pattern of values of input variables at different points in time and, as a teacher signal, its corresponding values of the control variable. An unlearned pattern of input variables is inputted to the thus-learned neuron circuit model, whereby a corresponding value of the control variable is determined. Preferably, plural patterns at given time intervals can be simultaneously used as patterns to be learned.
摘要翻译：一种用于使神经电路模型学习过程的典型过去控制结果并使用所述神经电路模型来支持所述过程的操作的方法和系统。通过使用神经电路模型作为输入信号，在不同的时间点使用输入变量的典型值，并且作为教师信号，控制变量的相应值。将输入变量的未校正模式输入到如此学习的神经元电路模型中，由此确定控制变量的对应值。优选地，以给定时间间隔的多个图案可以同时用作要学习的图案。

18. 发明授权

US5920105A Compound semiconductor field effect transistor having an amorphous gas gate insulation layer 失效
标题翻译：具有无定形气体栅极绝缘层的化合物半导体场效应晶体管
公开(公告)号：US5920105A
公开(公告)日：1999-07-06
申请号：US16419
申请日：1998-01-30
申请人： Naoya Okamoto , Hitoshi Tanaka , Naoki Hara
发明人： Naoya Okamoto , Hitoshi Tanaka , Naoki Hara
IPC分类号： H01L21/28 , H01L21/314 , H01L21/316 , H01L21/335 , H01L21/336 , H01L29/51 , H01L29/78
CPC分类号： H01L29/517 , H01L21/28158 , H01L21/28264 , H01L21/314 , H01L21/31604 , H01L29/66446 , H01L29/66522
摘要： An undoped GaAs layer and a GaAs active layer are formed on a GaAs semiconductor substrate in that order, and a surface of the GaAs active layer is inactivated. Thereafter, a wafer composed of the GaAs semiconductor substrate, the undoped GaAs layer and the GaAs active layer is annealed at temperatures ranging from 570 to 580.degree. C. in a molecular beam epitaxy apparatus. Thereafter, the wafer is maintained at temperatures ranging from 350 to 500.degree. C., and an insulating layer made of amorphous GaAs is formed on the GaAs active layer while using tertiary-butyl-gallium-sulfide-cubane "((t-Bu)GaS).sub.4 " as a source of the insulating layer. Thereafter, the insulating layer is patterned according to a photo-lithography method to form a gate insulating layer on the GaAs active layer. Thereafter, a source electrode and a drain electrode are formed on both sides of the gate insulating layer to arrange the source and drain electrodes separated from each other on the GaAs active layer, and a gate electrode is formed on the gate insulating layer.
摘要翻译：在GaAs半导体衬底上依次形成未掺杂的GaAs层和GaAs有源层，GaAs活性层的表面失活。此后，在分子束外延装置中，将由GaAs半导体衬底，未掺杂的GaAs层和GaAs有源层组成的晶片在570〜580℃的温度下退火。此后，将晶片保持在350〜500℃的温度范围内，在GaAs活性层上形成由非晶GaAs形成的绝缘层，同时使用叔丁基硫化镓 - 立方体“（（t-Bu） GaS）4“作为绝缘层的源。此后，根据光刻法将绝缘层图案化，以在GaAs有源层上形成栅极绝缘层。然后，在栅极绝缘层的两侧形成源电极和漏电极，在GaAs有源层上排列相互分离的源电极和漏电极，在栅极绝缘层上形成栅电极。

19. 发明授权

US5581459A Plant operation support system 失效
标题翻译：工厂运行支持系统
公开(公告)号：US5581459A
公开(公告)日：1996-12-03
申请号：US765839
申请日：1991-09-26
申请人： Ichiro Enbutsu , Kenji Baba , Shoji Watanabe , Hayao Yahagi , Naoki Hara , Mikio Yoda
发明人： Ichiro Enbutsu , Kenji Baba , Shoji Watanabe , Hayao Yahagi , Naoki Hara , Mikio Yoda
IPC分类号： G05B13/02 , G06N3/04 , G06F15/18
CPC分类号： G06N3/0427 , G05B13/027 , Y10S706/903 , Y10S706/906
摘要： When amounts of operation control variables and/or operation state evaluation variables of a plant are calculated through a multilayered neural network based on data indicating a plant state, and the calculated results are indicated to an operator, a plant operation support system has functions to analyze an internal causality between neurons in the neural network, and display quantitative guidance by association in the neural network and also the analyzed result of the internal causality between the neurons as an association reason.
摘要翻译：当基于指示工厂状态的数据通过多层神经网络计算工厂的操作控制变量和/或操作状态评估变量的数量时，将运算结果指示给操作者，工厂操作支持系统具有分析功能神经网络中神经元之间的内在因果关系，并通过神经网络中的关联显示定量指导，以及神经元内部因果关系的分析结果作为关联原因。

20. 发明授权

US5001454A Thin film resistor for strain gauge 失效
标题翻译：应变片薄膜电阻
公开(公告)号：US5001454A
公开(公告)日：1991-03-19
申请号：US404209
申请日：1989-09-07
申请人： Hideya Yamadera , Yoshiki Seno , Yasunori Taga , Katsuhiko Ariga , Tadashi Ozaki , Naoki Hara , Haruhiko Inoue
发明人： Hideya Yamadera , Yoshiki Seno , Yasunori Taga , Katsuhiko Ariga , Tadashi Ozaki , Naoki Hara , Haruhiko Inoue
IPC分类号： G01L1/22 , H01C10/10
CPC分类号： H01C10/10 , G01L1/2287
摘要： A thin film resistor for a strain gauge prepared by physical or chemical vapor deposition. The resistor contains 60 to 98 atomic % of chromium, 2 to 30 atomic % of oxygen, and 0 to 10 atomic % of a metal or semiconductor. These constituents are uniformly distributed. The thickness of the film is between 0.01 and 10 .mu.m. The metal is at least one of Al, Ti, Ta, Zr and In, and the semiconductor is at least one of silicon, germanium and boron. The thin film resistor has excellent resistance-strain characteristics and resistance-temperature characteristics, as well as high sensitivity and mechanical strength.

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