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11. 发明申请

US20110171834A1 SILICON ETCHANT AND ETCHING METHOD 审中-公开
标题翻译：硅蚀刻和蚀刻方法
公开(公告)号：US20110171834A1
公开(公告)日：2011-07-14
申请号：US13055991
申请日：2009-06-25
申请人： Kazuyoshi Yaguchi , Ryuji Sotoaka
发明人： Kazuyoshi Yaguchi , Ryuji Sotoaka
IPC分类号： H01L21/306 , C09K13/00
CPC分类号： H01L21/30608 , C09K13/02
摘要： In etching processing of silicon, in particular anisotropic etching processing of silicon in a manufacturing step of MEMS parts, an etchant having a long life of etchant and an etching method are provided by suppressing a lowering of an etching rate at the time of warming which is characteristic of a hydroxylamine-containing etchant.A silicon etchant for anisotropically dissolving monocrystalline silicon therein, which is an alkaline aqueous solution containing (A) tetramethylammonium hydroxide, (B) hydroxylamine and (C) carbon dioxide (CO2) and/or a carbonic acid salt of tetramethylammonium and having a pH of 13 or more, and an etching method of silicon using this etchant are provided.
摘要翻译：在硅的蚀刻处理中，特别是MEMS部件的制造工序中的硅的各向异性蚀刻处理中，通过抑制加热时的蚀刻速度的降低，提供蚀刻剂寿命长的蚀刻剂和蚀刻方法含羟胺蚀刻剂的特征。一种用于各向异性溶解的单晶硅的硅蚀刻剂，其是含有（A）四甲基氢氧化铵，（B）羟胺和（C）二氧化碳（CO 2）和/或四甲基铵的碳酸盐的碱性水溶液，其pH为 13以上，并且提供了使用该蚀刻剂的硅的蚀刻方法。

12. 发明申请

US20110059619A1 SILICON ETCHING LIQUID AND ETCHING METHOD 有权
标题翻译：硅蚀刻液和蚀刻方法
公开(公告)号：US20110059619A1
公开(公告)日：2011-03-10
申请号：US12991510
申请日：2009-04-24
申请人： Kazuyoshi Yaguchi , Ryuji Sotoaka
发明人： Kazuyoshi Yaguchi , Ryuji Sotoaka
IPC分类号： H01L21/306 , C09K13/02
CPC分类号： H01L21/30608
摘要： In etching processing of silicon, in particular anisotropic etching processing of silicon in a manufacturing step of MEMS parts, an etching liquid having a long life of etching liquid and an etching method are provided by suppressing a lowering of an etching rate at the time of warming which is characteristic of a hydroxylamine-containing etching liquid.A silicon etching liquid which is an alkaline aqueous solution containing an alkali metal hydroxide, hydroxylamine and an inorganic carbonate compound and having a pH of 12 or more and which is able to anisotropically dissolve monocrystalline silicon therein, and an etching method of silicon using this etching liquid are provided.
摘要翻译：在MEMS的蚀刻处理中，特别是在MEMS部件的制造工序中的硅的各向异性蚀刻处理中，通过抑制加热时的蚀刻速度的降低来提供蚀刻液的寿命长的蚀刻液和蚀刻方法这是含羟胺蚀刻液的特征。一种硅蚀刻液体，其是含有碱金属氢氧化物，羟胺和无机碳酸盐化合物并且pH为12以上并且能够各向异性地溶解单晶硅的碱性水溶液，以及使用该蚀刻的硅的蚀刻方法提供液体。

13. 发明授权

US08883652B2 Silicon etching liquid and etching method 有权
标题翻译：硅蚀刻液和蚀刻方法
公开(公告)号：US08883652B2
公开(公告)日：2014-11-11
申请号：US12681247
申请日：2008-09-22
申请人： Kazuyoshi Yaguchi , Ryuji Sotoaka
发明人： Kazuyoshi Yaguchi , Ryuji Sotoaka
IPC分类号： H01L21/306 , C09K13/00 , B81C1/00
CPC分类号： H01L21/30608 , B81C1/00539
摘要： A silicon etching liquid characterized by anisotropically dissolving monocrystalline silicon therein by using an aqueous solution containing a quaternary ammonium hydroxide and an aminoguanidine salt and an etching method of silicon using the instant etching liquid are an etching liquid and an etching method enabling one to perform processing at a high etching rate in etching processing of silicon, particularly in etching processing of silicon in a manufacturing process of MEMS parts or semiconductor devices.
摘要翻译：通过使用含有季铵氢氧化物和氨基胍盐的水溶液和使用瞬时蚀刻液的硅的蚀刻方法，以单轴硅各向异性地溶解单晶硅为特征的硅蚀刻液是能够进行处理的蚀刻液和蚀刻方法在硅的蚀刻处理中，特别是在MEMS部件或半导体器件的制造工艺中的硅的蚀刻处理中的高蚀刻速率。

14. 发明申请

US20120190210A1 SILICON ETCHING SOLUTION AND ETCHING METHOD 审中-公开
标题翻译：硅蚀刻解决方案和蚀刻方法
公开(公告)号：US20120190210A1
公开(公告)日：2012-07-26
申请号：US13499131
申请日：2010-09-29
申请人： Yoshiko Fujioto , Ryuji Sotoaka
发明人： Yoshiko Fujioto , Ryuji Sotoaka
IPC分类号： H01L21/302 , C09K13/00 , C09K13/02
CPC分类号： H01L21/30608 , C09K13/02
摘要： Provided are an etching solution in which in etching processing of silicon, particularly in anisotropic etching processing of silicon in a manufacturing process of semiconductors or MEMS parts, a high etching rate is realized by suppressing a lowering an Si etching rate, which is characteristic in a hydroxylamine-containing etching solution and is caused when Cu exists in the solution, and an etching method. The etching solution is a silicon etching solution which is an alkaline aqueous solution containing an alkaline hydroxide, hydroxylamine, and a thiourea and is characterized by dissolving anisotropically monocrystalline silicon therein, and the etching method is an etching method of silicon using the etching solution.
摘要翻译：提供了在半导体或MEMS部件的制造工艺中特别是硅的各向异性蚀刻处理中的硅的蚀刻处理中，通过抑制Si蚀刻速率的降低来实现高蚀刻速率的蚀刻溶液，其是在含有羟胺的蚀刻溶液，并且在溶液中存在Cu时产生蚀刻方法。蚀刻溶液是作为含有碱性氢氧化物，羟胺和硫脲的碱性水溶液的硅蚀刻溶液，其特征在于各向异性地溶解单晶硅，蚀刻方法是使用蚀刻溶液的硅的蚀刻方法。

15. 发明授权

US07892404B2 Method for oxidizing substance and oxidation apparatus therefor 有权
标题翻译：氧化物质及其氧化装置的方法
公开(公告)号：US07892404B2
公开(公告)日：2011-02-22
申请号：US11597250
申请日：2005-05-18
申请人： Ryuji Sotoaka , Yoshiya Kimura
发明人： Ryuji Sotoaka , Yoshiya Kimura
IPC分类号： C07C1/00 , C01B13/00 , C01D1/00
CPC分类号： B01J19/123 , A61L2/10 , A61L2/186 , A61L2/24 , A62D3/176 , A62D3/38 , A62D2101/20 , A62D2101/22 , A62D2101/28 , A62D2203/04 , B01J19/0093 , B01J2219/00936 , B01J2219/0801 , B01J2219/0879 , B01J2219/089 , B01J2219/0892 , C01B13/322 , C01F7/428 , H05K3/385
摘要： The present invention provides a method of oxidizing a substance in a liquid containing nitrous oxide (N2O) and an oxidation apparatus therefor. In this method, oxidation of a substance is conducted by allowing a substance to be present in a solution containing nitrous oxide (N2O) and irradiating the solution with light including a wavelength of at least 240 nm or less.
摘要翻译：本发明提供一种氧化含有一氧化二氮（N 2 O）的液体中的物质及其氧化装置的方法。在该方法中，通过使物质存在于含有一氧化二氮（N2O）的溶液中并用包含至少240nm以下的波长的光照射溶液来进行物质的氧化。

16. 发明申请

US20090114619A1 WET ETCHING METHOD AND WET ETCHING APPARATUS 审中-公开
标题翻译：湿蚀刻方法和湿蚀刻装置
公开(公告)号：US20090114619A1
公开(公告)日：2009-05-07
申请号：US12094103
申请日：2006-11-17
申请人： Ryuji Sotoaka , Keiichi Tanaka , Tomoyuki Azuma
发明人： Ryuji Sotoaka , Keiichi Tanaka , Tomoyuki Azuma
IPC分类号： B44C1/22 , C23F1/08
CPC分类号： C23F1/02 , C23F1/18 , C23F1/38 , H01J9/025 , H01J9/148 , H01J31/127 , H01L21/32134 , H01L21/67086 , H01L21/67115
摘要： A fine pattern is formed on a surface of a processing object without using photoresist. A wet etching for the processing object in an area to which ultraviolet light is applied is performed by bringing a solution in which nitrous oxide (N2O) is dissolved into contact with the processing object and applying the ultraviolet light to the solution in a vicinity of an area to the processing object other than portions shielded with a mask whereupon a light shielding pattern is formed.
摘要翻译：在不使用光致抗蚀剂的情况下，在加工对象的表面上形成精细图案。在施加紫外线的区域中的处理对象的湿法蚀刻是通过使其中溶解有一氧化二氮（N 2 O）的溶液与处理对象接触并将紫外光施加到溶液附近的除了形成有屏蔽图案的掩模之外的除了部分之外的处理对象的区域。

17. 发明申请

US20080047577A1 Substrate Cleaning Device and Cleaning Method Thereof 审中-公开
标题翻译：基材清洗装置及其清洗方法
公开(公告)号：US20080047577A1
公开(公告)日：2008-02-28
申请号：US11849857
申请日：2007-09-04
申请人： Hideto Goto , Kenji Furusawa , Satoshi Joya , Ryuji Sotoaka , Keiichi Tanaka , Yoshiya Kimura , Tomoyuki Azuma
发明人： Hideto Goto , Kenji Furusawa , Satoshi Joya , Ryuji Sotoaka , Keiichi Tanaka , Yoshiya Kimura , Tomoyuki Azuma
IPC分类号： B08B3/12
CPC分类号： B08B7/0035 , B08B3/10 , H01L21/02052 , H01L21/67051 , H01L21/67115
摘要： A substrate cleaning device includes a rotating table that rotatably holds a silicon substrate. A light irradiation device is capable of irradiating at least a portion of a surface of the held silicon substrate with light. A nozzle is capable of selectively supplying at least N2O water and a hydrofluoric acid solution onto the substrate. A control unit controls the supply of the light irradiation device and the nozzle and enables light irradiation by the light irradiation device when the N2O water is supplied onto the silicon substrate.
摘要翻译：一种基板清洁装置，包括可旋转地保持硅基板的旋转台。光照射装置能够用光照射被保持的硅衬底的表面的至少一部分。喷嘴能够选择性地将至少N 2 O 2 O水和氢氟酸溶液供应到基底上。控制单元控制光照射装置和喷嘴的供给，并且当N 2 O 2水被供应到硅基板上时，能够通过光照射装置进行光照射。

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