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11. 发明授权

US08124974B2 Display device 有权
标题翻译：显示设备
公开(公告)号：US08124974B2
公开(公告)日：2012-02-28
申请号：US12536097
申请日：2009-08-05
申请人： Takeshi Noda , Toshio Miyazawa , Takuo Kaitoh , Takumi Shigaki
发明人： Takeshi Noda , Toshio Miyazawa , Takuo Kaitoh , Takumi Shigaki
IPC分类号： H01L33/00
CPC分类号： G02F1/13624 , G02F2202/104
摘要： A display device is provided in which at least first and second thin film transistors are formed on a substrate, including a gate electrode formed on a semiconductor layer with a gate insulating film in between. The semiconductor layer is divided into individual regions for each film transistor, and is provided with a common region and LDD regions between a channel region and a drain region, as well as between the channel region and a source region. The gate electrode is formed as an integrated gate electrode for the first and second thin film transistors that faces the common region, the channel region and the LDD regions of the first thin film transistor and the channel region and the LDD regions of the second thin film transistor.
摘要翻译：提供了一种显示装置，其中至少第一和第二薄膜晶体管形成在基板上，包括形成在其间具有栅极绝缘膜的半导体层上的栅电极。半导体层被分成用于每个薄膜晶体管的单个区域，并且在沟道区域和漏极区域之间以及在沟道区域和源极区域之间设置有公共区域和LDD区域。栅电极形成为第一和第二薄膜晶体管的集成栅电极，其面对公共区域，第一薄膜晶体管的沟道区域和LDD区域以及第二薄膜的沟道区域和LDD区域晶体管。

12. 发明申请

US20110024763A1 DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US20110024763A1
公开(公告)日：2011-02-03
申请号：US12844887
申请日：2010-07-28
申请人： Takeshi NODA , Toshio Miyazawa , Takuo Kaitoh , Daisuke Sonoda
发明人： Takeshi NODA , Toshio Miyazawa , Takuo Kaitoh , Daisuke Sonoda
IPC分类号： H01L33/16 , H01L21/336
CPC分类号： H01L29/78621 , G02F1/1368 , H01L29/66765 , H01L29/78627
摘要： A display device which has thin film transistors, wherein a semiconductor layer includes a first layer, second layers and third layers, the first layer has a channel region, the second layers are an impurity layer, the third layers are a low-concentration impurity layer, the second layers have connection portions connected with an electrodes, the third layers are formed to annularly surround the second layers, a channel-region-side edge portion out of edge portions of the third layer is in contact with the first layer, the edge portions of the third layer but the channel-region-side edge portion are in contact with an interlayer insulation film, the second layers have a first region where the second layer overlaps with a gate electrode and a second region where the second layer does not overlap with the gate electrode, and the connection portion is in the second region.
摘要翻译：一种具有薄膜晶体管的显示装置，其中半导体层包括第一层，第二层和第三层，第一层具有沟道区，第二层是杂质层，第三层是低浓度杂质层所述第二层具有与电极连接的连接部，所述第三层形成为环绕所述第二层，所述第三层的边缘部分之外的沟道区域侧边缘部与所述第一层接触，所述边缘第三层的第二层与沟道区侧边缘部分接触层间绝缘膜，第二层具有第一区域，其中第二层与栅电极重叠，第二区与第二层不重叠与栅电极连接，连接部位在第二区域。

13. 发明申请

US20100032680A1 DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US20100032680A1
公开(公告)日：2010-02-11
申请号：US12536066
申请日：2009-08-05
申请人： Takuo KAITOH , Toshio Miyazawa , Takeshi Sakai
发明人： Takuo KAITOH , Toshio Miyazawa , Takeshi Sakai
IPC分类号： H01L33/00 , H01L21/336
CPC分类号： G02F1/1368 , H01L27/124 , H01L29/458 , H01L29/78618
摘要： Provided is a display device including: a gate electrode (GT); a semiconductor film (S) which controls a current flowing between a source electrode (ST) and a drain electrode (DT), the semiconductor film including a channel region and two impurity regions formed of regions which sandwich the channel region; two Ohmic contact layers (DS) being interposed between the source electrode and the like and the two impurity regions; and an insulating film laminated on a partial region of the semiconductor film, the partial region being around a position corresponding to a substantial center of the semiconductor film, in which: the semiconductor film is formed of one of microcrystalline-silicon and polycrystalline-silicon; the two impurity regions are formed in regions on which the insulating film is absent; the two Ohmic contact layers cover the two impurity regions therewith; and the source electrode and the like cover the Ohmic contact layers therewith.
摘要翻译：提供一种显示装置，包括：栅电极（GT）; 控制在源电极（ST）和漏电极（DT）之间流动的电流的半导体膜（S），所述半导体膜包括沟道区域和由夹着沟道区域的区域形成的两个杂质区域; 两个欧姆接触层（DS）插在源电极等和两个杂质区之间; 以及层叠在所述半导体膜的部分区域上的绝缘膜，所述部分区域围绕与所述半导体膜的大致中心对应的位置，其中：所述半导体膜由微晶硅和多晶硅中的一个形成; 在绝缘膜不存在的区域中形成两个杂质区域; 两个欧姆接触层覆盖其两个杂质区域; 源电极等覆盖欧姆接触层。

14. 发明授权

US08222645B2 Display device 有权
标题翻译：显示设备
公开(公告)号：US08222645B2
公开(公告)日：2012-07-17
申请号：US12702975
申请日：2010-02-09
申请人： Katsumi Matsumoto , Hideki Nakagawa , Yoshiharu Owaku , Terunori Saitou , Toshio Miyazawa , Takahiro Kamo , Takuo Kaitoh
发明人： Katsumi Matsumoto , Hideki Nakagawa , Yoshiharu Owaku , Terunori Saitou , Toshio Miyazawa , Takahiro Kamo , Takuo Kaitoh
IPC分类号： H01L29/04 , H01L31/036 , H01L31/0376 , H01L31/20
CPC分类号： G06F3/0412 , G02F1/1362 , G02F2001/13312 , G06F3/042 , H01L27/3227 , H01L27/323 , H01L27/3269
摘要： A display device having a photosensor which exhibits excellent photoelectric conversion efficiency is provided. In a display device which forms photosensors on a substrate thereof, the photosensor is formed by sequentially stacking a gate electrode, a gate insulation film and a semiconductor layer in such an order or in an opposite order from a substrate side, and electrodes are connected to both sides of the semiconductor layer respectively, the semiconductor layer is formed of a stacked body consisting of a crystalline semiconductor layer and an amorphous semiconductor layer, and the crystalline semiconductor layer is arranged on the gate insulation film side.
摘要翻译：提供了具有优异的光电转换效率的光传感器的显示装置。在其基板上形成光电传感器的显示装置中，光电传感器通过依次层叠栅电极，栅极绝缘膜和半导体层，从基板侧按顺序或相反的顺序形成，电极连接到半导体层的两侧分别由由结晶半导体层和非晶半导体层组成的层叠体形成，并且在栅极绝缘膜侧配置结晶半导体层。

15. 发明申请

US20100096645A1 DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：显示装置及其制造方法
公开(公告)号：US20100096645A1
公开(公告)日：2010-04-22
申请号：US12579428
申请日：2009-10-15
申请人： Daisuke Sonoda , Toshio Miyazawa , Takuo Kaitoh , Yasukazu Kimura , Takeshi Kuriyagawa , Takeshi Noda
发明人： Daisuke Sonoda , Toshio Miyazawa , Takuo Kaitoh , Yasukazu Kimura , Takeshi Kuriyagawa , Takeshi Noda
IPC分类号： H01L33/00
CPC分类号： H01L27/1288 , H01L27/1214 , H01L27/124 , H01L27/1248
摘要： A manufacturing method of a display device and a display device which can reduce the number of times that an insulation substrate is put into a CVD device and is taken out from the CVD device are provided. The manufacturing method of a display device includes the steps of forming a conductive layer including first electrode films and second electrode films, a first insulation layer, semiconductor films, a second insulation layer and a protective layer on an insulation substrate; forming first resist films having a predetermined thickness which are arranged in first regions above the semiconductor films, opening portions which are arranged in second regions above the second electrode films and second resist films having a large thickness which are arranged in regions other than the first regions and the second regions on the protective layer; etching portions below the second regions, removing the first resist films by ashing; forming first holes which reach the semiconductor films below the first regions and second holes which reach the second electrode films below the second regions; removing the second resist films, and forming lines which are connected to the semiconductor films and lines which are connected to the second electrode films.
摘要翻译：提供了可以减少将绝缘基板放入CVD装置并从CVD装置中取出的次数的显示装置和显示装置的制造方法。显示装置的制造方法包括在绝缘基板上形成包括第一电极膜和第二电极膜的导电层，第一绝缘层，半导体膜，第二绝缘层和保护层的步骤; 形成具有预定厚度的第一抗蚀剂膜，其布置在半导体膜上方的第一区域中，布置在第二电极膜上方的第二区域中的开口部分和布置在除了第一区域之外的区域中的具有大厚度的第二抗蚀剂膜和保护层上的第二区域; 蚀刻第二区域下方的部分，通过灰化去除第一抗蚀剂膜; 形成在第一区域下方到达半导体膜的第一孔和在第二区域下方到达第二电极膜的第二孔; 去除第二抗蚀剂膜，以及形成连接到半导体膜的线和连接到第二电极膜的线。

16. 发明授权

US08148726B2 Display device and manufacturing method thereof 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US08148726B2
公开(公告)日：2012-04-03
申请号：US12844887
申请日：2010-07-28
申请人： Takeshi Noda , Toshio Miyazawa , Takuo Kaitoh , Daisuke Sonoda
发明人： Takeshi Noda , Toshio Miyazawa , Takuo Kaitoh , Daisuke Sonoda
IPC分类号： H01L33/013
CPC分类号： H01L29/78621 , G02F1/1368 , H01L29/66765 , H01L29/78627
摘要： A display device which has thin film transistors, wherein a semiconductor layer includes a first layer, second layers and third layers, the first layer has a channel region, the second layers are an impurity layer, the third layers are a low-concentration impurity layer, the second layers have connection portions connected with an electrodes, the third layers are formed to annularly surround the second layers, a channel-region-side edge portion out of edge portions of the third layer is in contact with the first layer, the edge portions of the third layer but the channel-region-side edge portion are in contact with an interlayer insulation film, the second layers have a first region where the second layer overlaps with a gate electrode and a second region where the second layer does not overlap with the gate electrode, and the connection portion is in the second region.
摘要翻译：一种具有薄膜晶体管的显示装置，其中半导体层包括第一层，第二层和第三层，第一层具有沟道区，第二层是杂质层，第三层是低浓度杂质层所述第二层具有与电极连接的连接部，所述第三层形成为环绕所述第二层，所述第三层的边缘部分之外的沟道区域侧边缘部与所述第一层接触，所述边缘第三层的第二层与沟道区侧边缘部分接触层间绝缘膜，第二层具有第一区域，其中第二层与栅电极重叠，第二区与第二层不重叠与栅电极连接，连接部位在第二区域。

17. 发明授权

US08129724B2 Display device including first, second, and third semiconductor films 有权
标题翻译：显示装置，包括第一，第二和第三半导体膜
公开(公告)号：US08129724B2
公开(公告)日：2012-03-06
申请号：US12613598
申请日：2009-11-06
申请人： Takuo Kaitoh , Toshio Miyazawa
发明人： Takuo Kaitoh , Toshio Miyazawa
IPC分类号： H01L27/14
CPC分类号： H01L29/78618 , H01L27/12 , H01L29/04 , H01L29/66765
摘要： A display device including a transparent substrate, and a plurality of thin film transistors formed on the transparent substrate, wherein each of the thin film transistors have a gate electrode, a source electrode and a drain electrode, a first semiconductor film, an insulation film, a second semiconductor film, and a third semiconductor film. The third semiconductor film is connected with the source electrode and the drain electrode by an ohmic contact, and the second semiconductor film is formed below the third semiconductor film and has a resistance higher than resistance of the third semiconductor film.
摘要翻译：一种显示装置，包括透明基板和形成在透明基板上的多个薄膜晶体管，其中每个薄膜晶体管具有栅电极，源电极和漏电极，第一半导体膜，绝缘膜，第二半导体膜和第三半导体膜。第三半导体膜通过欧姆接触与源电极和漏电极连接，第二半导体膜形成在第三半导体膜的下方，并且具有比第三半导体膜的电阻高的电阻。

18. 发明授权

US08124975B2 Display device with multi-gate TFTs of a pixel region having different relative areas of gate regions with respect to channel regions of the TFTs 有权
标题翻译：具有相对于TFT的沟道区域具有不同栅极区相对面积的像素区域的多栅极TFT的显示装置
公开(公告)号：US08124975B2
公开(公告)日：2012-02-28
申请号：US12608147
申请日：2009-10-29
申请人： Takeshi Noda , Toshio Miyazawa , Takuo Kaitoh , Hiroyuki Abe
发明人： Takeshi Noda , Toshio Miyazawa , Takuo Kaitoh , Hiroyuki Abe
IPC分类号： H01L33/00
CPC分类号： H01L29/78645 , H01L27/1214 , H01L29/42384 , H01L29/78621 , H01L29/78627
摘要： Provided is a display device capable of suppressing generation of optical leakage current as well as increase in capacitance in a case where a plurality of thin film transistors (TFTs) including a gate electrode film on a light source side are formed in series. Relative areas of opposing regions between a semiconductor film and the gate electrode film with respect to channel regions are different in at least a part of the plurality of TFTs, to thereby provide a flat panel display having a structure for suppressing increase in capacitance while suppressing generation of optical leakage current.
摘要翻译：提供了在包括在光源侧的栅电极膜串联形成的多个薄膜晶体管（TFT）的情况下能够抑制漏电流的产生以及电容增加的显示装置。在多个TFT的至少一部分中，半导体膜与栅电极膜之间的相对区域相对于沟道区的相对区域是不同的，从而提供具有抑制电容增加的结构的平板显示器，同时抑制发生的漏光电流。

19. 发明申请

US20100230675A1 DISPLAY DEVICE 有权
标题翻译：显示设备
公开(公告)号：US20100230675A1
公开(公告)日：2010-09-16
申请号：US12702975
申请日：2010-02-09
申请人： Katsumi Matsumoto , Hideki Nakagawa , Yoshiharu Owaku , Terunori Saitou , Toshio Miyazawa , Takahiro Kamo , Takuo Kaitoh
发明人： Katsumi Matsumoto , Hideki Nakagawa , Yoshiharu Owaku , Terunori Saitou , Toshio Miyazawa , Takahiro Kamo , Takuo Kaitoh
IPC分类号： H01L33/16 , H01L33/02
CPC分类号： G06F3/0412 , G02F1/1362 , G02F2001/13312 , G06F3/042 , H01L27/3227 , H01L27/323 , H01L27/3269
摘要： A display device having a photosensor which exhibits excellent photoelectric conversion efficiency is provided. In a display device which forms photosensors on a substrate thereof, the photosensor is formed by sequentially stacking a gate electrode, a gate insulation film and a semiconductor layer in such an order or in an opposite order from a substrate side, and electrodes are connected to both sides of the semiconductor layer respectively, the semiconductor layer is formed of a stacked body consisting of a crystalline semiconductor layer and an amorphous semiconductor layer, and the crystalline semiconductor layer is arranged on the gate insulation film side.
摘要翻译：提供了具有优异的光电转换效率的光传感器的显示装置。在其基板上形成光电传感器的显示装置中，光电传感器通过依次层叠栅电极，栅极绝缘膜和半导体层，从基板侧按顺序或相反的顺序形成，电极连接到半导体层的两侧分别由由结晶半导体层和非晶半导体层组成的层叠体形成，并且在栅极绝缘膜侧配置结晶半导体层。

20. 发明申请

US20100032674A1 Display Device 有权
标题翻译：显示设备
公开(公告)号：US20100032674A1
公开(公告)日：2010-02-11
申请号：US12536097
申请日：2009-08-05
申请人： Takeshi Noda , Toshio Miyazawa , Takuo Kaitoh , Takumi Shigaki
发明人： Takeshi Noda , Toshio Miyazawa , Takuo Kaitoh , Takumi Shigaki
IPC分类号： H01L33/00
CPC分类号： G02F1/13624 , G02F2202/104
摘要： An object of the present invention is to provide a display device where small thin film transistors with a lower off current can be formed. The present invention provides a display device where thin film transistors are formed on a substrate, and in the above described thin film transistors, a gate electrode is formed on a semiconductor layer with a gate insulating film in between, the above described thin film transistors are formed of at least a first thin film transistor and a second thin film transistor, and the above described semiconductor layer is divided into individual regions for each film transistor, the above described semiconductor layer is provided with a common region shared either by the drain region of the above described first thin film transistor and the source region of the above described second thin film transistor or by the source region of the above described first thin film transistor and the drain region of the above described second thin film transistor, in the first thin film transistor and the second thin film transistor, the semiconductor layer is provided with LDD regions where the impurity concentration is lower than in the above described drain region and the above described source region, between the channel region and the drain region, as well as between the channel region and the source region, and the above described gate electrode is formed so as to overlap with the above described common region in the above described semiconductor layer and face at least the above described channel region and the above described LDD regions of the above described first thin film transistor and the above described channel region and the above described LDD regions of the above described second thin film transistor.
摘要翻译：本发明的目的是提供一种可以形成具有较低截止电流的小型薄膜晶体管的显示装置。本发明提供了一种在基板上形成薄膜晶体管的显示装置，在上述薄膜晶体管中，在半导体层之间形成有栅极绝缘膜的栅电极，上述薄膜晶体管由至少第一薄膜晶体管和第二薄膜晶体管形成，并且上述半导体层被分成用于每个薄膜晶体管的各个区域，上述半导体层设置有共同区域，其共同区域由上述第一薄膜晶体管和上述第二薄膜晶体管的源极区域或上述第一薄膜晶体管的源极区域和上述第二薄膜晶体管的漏极区域在第一薄膜晶体管和第二薄膜晶体管，半导体层设置有LDD区，其中杂质c 浓度低于上述漏极区域和上述源极区域，沟道区域和漏极区域之间以及沟道区域和源极区域之间，并且上述栅极电极形成为重叠在上述半导体层中具有上述公共区域并且至少面向上述第一薄膜晶体管的上述沟道区域和上述LDD区域以及上述沟道区域和上述上述LDD区域描述的第二薄膜晶体管。

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